KR101945638B1 - 노광 장치, 노광 방법 및 디바이스 제조 방법 - Google Patents

노광 장치, 노광 방법 및 디바이스 제조 방법 Download PDF

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Publication number
KR101945638B1
KR101945638B1 KR1020177001215A KR20177001215A KR101945638B1 KR 101945638 B1 KR101945638 B1 KR 101945638B1 KR 1020177001215 A KR1020177001215 A KR 1020177001215A KR 20177001215 A KR20177001215 A KR 20177001215A KR 101945638 B1 KR101945638 B1 KR 101945638B1
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KR
South Korea
Prior art keywords
substrate
liquid
temperature
exposure
stage
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Expired - Fee Related
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KR1020177001215A
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English (en)
Korean (ko)
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KR20170007869A (ko
Inventor
나오유키 고바야시
소이치 오와
시게루 히루카와
야스히로 오무라
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가부시키가이샤 니콘
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G03F7/7075—Handling workpieces outside exposure position, e.g. SMIF box
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Microscoopes, Condenser (AREA)
KR1020177001215A 2004-02-04 2005-02-03 노광 장치, 노광 방법 및 디바이스 제조 방법 Expired - Fee Related KR101945638B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004028092 2004-02-04
JPJP-P-2004-028092 2004-02-04
PCT/JP2005/001990 WO2005076324A1 (ja) 2004-02-04 2005-02-03 露光装置、露光方法及びデバイス製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020147028465A Division KR101942136B1 (ko) 2004-02-04 2005-02-03 노광 장치, 노광 방법 및 디바이스 제조 방법

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020197002589A Division KR20190011830A (ko) 2004-02-04 2005-02-03 노광 장치, 노광 방법 및 디바이스 제조 방법

Publications (2)

Publication Number Publication Date
KR20170007869A KR20170007869A (ko) 2017-01-20
KR101945638B1 true KR101945638B1 (ko) 2019-02-07

Family

ID=34835916

Family Applications (8)

Application Number Title Priority Date Filing Date
KR1020177001215A Expired - Fee Related KR101945638B1 (ko) 2004-02-04 2005-02-03 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020127008670A Expired - Fee Related KR101554772B1 (ko) 2004-02-04 2005-02-03 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020067015579A Expired - Fee Related KR101309428B1 (ko) 2004-02-04 2005-02-03 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020157012753A Expired - Fee Related KR101741343B1 (ko) 2004-02-04 2005-02-03 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020117031204A Ceased KR20120003511A (ko) 2004-02-04 2005-02-03 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020147028465A Expired - Fee Related KR101942136B1 (ko) 2004-02-04 2005-02-03 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020137031820A Expired - Fee Related KR101579361B1 (ko) 2004-02-04 2005-02-03 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020197002589A Ceased KR20190011830A (ko) 2004-02-04 2005-02-03 노광 장치, 노광 방법 및 디바이스 제조 방법

Family Applications After (7)

Application Number Title Priority Date Filing Date
KR1020127008670A Expired - Fee Related KR101554772B1 (ko) 2004-02-04 2005-02-03 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020067015579A Expired - Fee Related KR101309428B1 (ko) 2004-02-04 2005-02-03 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020157012753A Expired - Fee Related KR101741343B1 (ko) 2004-02-04 2005-02-03 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020117031204A Ceased KR20120003511A (ko) 2004-02-04 2005-02-03 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020147028465A Expired - Fee Related KR101942136B1 (ko) 2004-02-04 2005-02-03 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020137031820A Expired - Fee Related KR101579361B1 (ko) 2004-02-04 2005-02-03 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020197002589A Ceased KR20190011830A (ko) 2004-02-04 2005-02-03 노광 장치, 노광 방법 및 디바이스 제조 방법

Country Status (6)

Country Link
US (5) US8208119B2 (enExample)
EP (6) EP3267469B1 (enExample)
JP (7) JP5158178B2 (enExample)
KR (8) KR101945638B1 (enExample)
TW (4) TWI430330B (enExample)
WO (1) WO2005076324A1 (enExample)

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KR101945638B1 (ko) 2004-02-04 2019-02-07 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
CN1950929B (zh) * 2004-03-25 2011-05-25 株式会社尼康 曝光装置及曝光方法、以及组件制造方法
US7486381B2 (en) * 2004-05-21 2009-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7304715B2 (en) 2004-08-13 2007-12-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4665712B2 (ja) 2004-10-26 2011-04-06 株式会社ニコン 基板処理方法、露光装置及びデバイス製造方法
US8089608B2 (en) 2005-04-18 2012-01-03 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US7652746B2 (en) * 2005-06-21 2010-01-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR20080071552A (ko) 2005-12-06 2008-08-04 가부시키가이샤 니콘 노광 방법, 노광 장치 및 디바이스 제조 방법
US7746447B2 (en) * 2005-12-22 2010-06-29 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and method of calibrating a lithographic apparatus
US7649611B2 (en) 2005-12-30 2010-01-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8045134B2 (en) 2006-03-13 2011-10-25 Asml Netherlands B.V. Lithographic apparatus, control system and device manufacturing method
DE102006021797A1 (de) * 2006-05-09 2007-11-15 Carl Zeiss Smt Ag Optische Abbildungseinrichtung mit thermischer Dämpfung
US8068208B2 (en) * 2006-12-01 2011-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for improving immersion scanner overlay performance
US20080137055A1 (en) * 2006-12-08 2008-06-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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JP5369443B2 (ja) * 2008-02-05 2013-12-18 株式会社ニコン ステージ装置、露光装置、露光方法、及びデバイス製造方法
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JP2010118527A (ja) * 2008-11-13 2010-05-27 Canon Inc 露光装置、およびデバイス製造方法
US8896806B2 (en) 2008-12-29 2014-11-25 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
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JP5269128B2 (ja) * 2010-03-12 2013-08-21 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置および方法
NL2006913A (en) 2010-07-16 2012-01-17 Asml Netherlands Bv Lithographic apparatus and method.
KR101911400B1 (ko) * 2012-05-29 2018-10-24 에이에스엠엘 네델란즈 비.브이. 대상물 홀더 및 리소그래피 장치
TWI582837B (zh) * 2012-06-11 2017-05-11 應用材料股份有限公司 在脈衝式雷射退火中使用紅外線干涉技術之熔化深度測定
JP5989525B2 (ja) * 2012-11-30 2016-09-07 東京エレクトロン株式会社 基板処理装置、基板処理装置の基板保持状態の把握方法および記憶媒体
CN106662822A (zh) * 2014-07-01 2017-05-10 Asml荷兰有限公司 光刻设备和制造光刻设备的方法
JP6702753B2 (ja) * 2016-02-17 2020-06-03 キヤノン株式会社 リソグラフィ装置、及び物品の製造方法
JP6883655B2 (ja) * 2017-02-03 2021-06-09 エーエスエムエル ネザーランズ ビー．ブイ． 露光装置
JP7326256B2 (ja) * 2017-10-26 2023-08-15 パーティクル・メージャーリング・システムズ・インコーポレーテッド 粒子計測システム及び方法
KR102511272B1 (ko) 2018-02-23 2023-03-16 삼성전자주식회사 노광 장치 및 이를 이용하는 반도체 장치의 제조 방법
WO2019244362A1 (ja) * 2018-06-20 2019-12-26 丸文株式会社 リフト装置及び使用方法
CN110856489A (zh) * 2018-08-22 2020-03-03 燕化永乐（乐亭）生物科技有限公司 一种复配除草剂
JP7227834B2 (ja) * 2019-04-16 2023-02-22 キヤノン株式会社 基板処理装置及び物品の製造方法
DE102019215340A1 (de) * 2019-10-07 2021-04-08 Carl Zeiss Smt Gmbh Vorrichtung und Verfahren zum Abschirmen von thermisch zu isolierenden Komponenten in mikrolithographischen Projektionsbelichtungsanlagen
JP7447158B2 (ja) * 2020-02-12 2024-03-11 ギガフォトン株式会社 情報処理装置、情報処理方法、及び半導体製造システム
JP7536571B2 (ja) * 2020-09-15 2024-08-20 キオクシア株式会社 位置計測装置及び計測方法
JP2024164941A (ja) 2023-05-16 2024-11-28 株式会社日立ハイテク 撮影装置、および、撮影方法

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