KR101876470B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR101876470B1
KR101876470B1 KR1020127014505A KR20127014505A KR101876470B1 KR 101876470 B1 KR101876470 B1 KR 101876470B1 KR 1020127014505 A KR1020127014505 A KR 1020127014505A KR 20127014505 A KR20127014505 A KR 20127014505A KR 101876470 B1 KR101876470 B1 KR 101876470B1
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South Korea
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layer
oxide semiconductor
metal
electrode layer
oxide
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Expired - Fee Related
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KR1020127014505A
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Korean (ko)
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KR20120102682A (ko
Inventor
순페이 야마자키
스즈노스케 히라이시
켄고 아키모토
준이치로 사카타
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO

Landscapes

  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
KR1020127014505A 2009-11-06 2010-10-19 반도체 장치 Expired - Fee Related KR101876470B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009255272 2009-11-06
JPJP-P-2009-255272 2009-11-06
PCT/JP2010/068794 WO2011055645A1 (en) 2009-11-06 2010-10-19 Semiconductor device

Related Child Applications (2)

Application Number Title Priority Date Filing Date
KR1020187018861A Division KR102066532B1 (ko) 2009-11-06 2010-10-19 반도체 장치
KR1020137010279A Division KR101299255B1 (ko) 2009-11-06 2010-10-19 반도체 장치

Publications (2)

Publication Number Publication Date
KR20120102682A KR20120102682A (ko) 2012-09-18
KR101876470B1 true KR101876470B1 (ko) 2018-07-10

Family

ID=43969885

Family Applications (3)

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KR1020127014505A Expired - Fee Related KR101876470B1 (ko) 2009-11-06 2010-10-19 반도체 장치
KR1020137010279A Active KR101299255B1 (ko) 2009-11-06 2010-10-19 반도체 장치
KR1020187018861A Expired - Fee Related KR102066532B1 (ko) 2009-11-06 2010-10-19 반도체 장치

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020137010279A Active KR101299255B1 (ko) 2009-11-06 2010-10-19 반도체 장치
KR1020187018861A Expired - Fee Related KR102066532B1 (ko) 2009-11-06 2010-10-19 반도체 장치

Country Status (6)

Country Link
US (2) US8841662B2 (https=)
JP (5) JP5665480B2 (https=)
KR (3) KR101876470B1 (https=)
CN (2) CN104465318B (https=)
TW (3) TWI647849B (https=)
WO (1) WO2011055645A1 (https=)

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US8247276B2 (en) 2009-02-20 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, method for manufacturing the same, and semiconductor device
WO2011055668A1 (en) 2009-11-06 2011-05-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20140074404A (ko) 2009-11-20 2014-06-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터
KR102001577B1 (ko) 2010-12-17 2019-07-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 재료 및 반도체 장치
US9196741B2 (en) * 2012-02-03 2015-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2014005841A1 (en) * 2012-07-03 2014-01-09 Imec A method for fabricating a thin film transistor
DE112013006219T5 (de) 2012-12-25 2015-09-24 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung und deren Herstellungsverfahren
KR102290247B1 (ko) * 2013-03-14 2021-08-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치와 그 제작 방법
TWI631711B (zh) * 2013-05-01 2018-08-01 半導體能源研究所股份有限公司 半導體裝置
TWI513004B (zh) * 2013-07-04 2015-12-11 Ye Xin Technology Consulting Co Ltd 薄膜電晶體及其製造方法
CN104282767B (zh) * 2013-07-05 2017-12-12 鸿富锦精密工业（深圳）有限公司 薄膜晶体管及其制造方法
US11809451B2 (en) 2014-02-19 2023-11-07 Snowflake Inc. Caching systems and methods
US9941324B2 (en) 2015-04-28 2018-04-10 Nlt Technologies, Ltd. Semiconductor device, method of manufacturing semiconductor device, photodiode array, and imaging apparatus
CN104934330A (zh) * 2015-05-08 2015-09-23 京东方科技集团股份有限公司 一种薄膜晶体管及其制备方法、阵列基板和显示面板
CN105405768A (zh) * 2015-12-14 2016-03-16 华南理工大学 一种薄膜晶体管及其制备方法
US20170309852A1 (en) * 2016-04-22 2017-10-26 Semiconductor Energy Laboratory Co., Ltd. Light-Emitting Element, Display Device, Electronic Device, and Lighting Device
CN106098559A (zh) * 2016-06-21 2016-11-09 北京大学深圳研究生院 一种底栅共平面型金属氧化物薄膜晶体管的制备方法
KR102589754B1 (ko) 2016-08-05 2023-10-18 삼성디스플레이 주식회사 트랜지스터 및 이를 포함하는 표시 장치
CN106229260A (zh) 2016-08-31 2016-12-14 深圳市华星光电技术有限公司 一种薄膜晶体管及其制造方法
EP3435045B1 (en) * 2017-07-27 2023-12-13 ams AG Optical sensor package
KR102396806B1 (ko) 2017-08-31 2022-05-12 마이크론 테크놀로지, 인크 반도체 장치, 하이브리드 트랜지스터 및 관련 방법
CN111052395A (zh) 2017-08-31 2020-04-21 美光科技公司 半导体装置、晶体管以及用于接触金属氧化物半导体装置的相关方法
CN110265548B (zh) * 2019-06-04 2020-12-22 华东师范大学 一种铟掺杂n型有机薄膜晶体管及其制备方法
CN113889488B (zh) * 2021-09-18 2025-08-26 厦门天马显示科技有限公司 显示面板及显示装置
JP2023149086A (ja) * 2022-03-30 2023-10-13 株式会社ジャパンディスプレイ 半導体装置の製造方法

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