CN101960613A - 光电转换元件结构和太阳能电池 - Google Patents

光电转换元件结构和太阳能电池 Download PDF

Info

Publication number
CN101960613A
CN101960613A CN2009801076594A CN200980107659A CN101960613A CN 101960613 A CN101960613 A CN 101960613A CN 2009801076594 A CN2009801076594 A CN 2009801076594A CN 200980107659 A CN200980107659 A CN 200980107659A CN 101960613 A CN101960613 A CN 101960613A
Authority
CN
China
Prior art keywords
type semiconductor
layer
semiconductor layer
electric
contacts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2009801076594A
Other languages
English (en)
Inventor
大见忠弘
后藤哲也
田中宏治
佐野雄一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tohoku University NUC
Original Assignee
Tohoku University NUC
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tohoku University NUC, Tokyo Electron Ltd filed Critical Tohoku University NUC
Publication of CN101960613A publication Critical patent/CN101960613A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
    • H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table
    • H01L31/03685—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table including microcrystalline silicon, uc-Si
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
    • H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/07—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the Schottky type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
    • H01L31/1055—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type the devices comprising amorphous materials of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/545—Microcrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

本发明的课题在于通过降低接触电阻来改善光电转换元件结构的转换效率。本发明的p i n结构的光电转换元件结构，通过选择p型半导体的电荷带的上限的能级或n型半导体层的电子亲和力、与该半导体接触的金属层的功函数，与使用Al、Ag等作为电极时相比，使接触电阻降低。选择的金属层可以设置在由Al、Ag等形成的电极和半导体之间，也可以与n或p型半导体替换。

Description

光电转换元件结构和太阳能电池
技术领域
本发明涉及光电转换元件结构和包含该光电转换元件结构的太阳能电池。
背景技术
以往提出的太阳能电池中，有包含由薄膜形成的光电转换元件结构的太阳能电池。在这种情况下，有时采用包含分别使一导电型(例如p型)半导体层和逆导电型(例如n型)半导体层与i型半导体层的两面接触的结构的pin结构。采用了这样的pin结构的情况下，通过对i型半导体层外加电场能够使载流子的扩散长度变长。此外，还提出了由非晶半导体、微晶半导体、单晶半导体、多晶半导体等各种半导体形成光电转换元件结构中的各半导体层。此外，作为形成各半导体层的半导体，还提出了使用Si、SiC、Ge、SiGe等。
这样，包含含i层的3层结构的光电转换元件结构的太阳能电池必须将彼此不同的3种半导体层成膜，因此现状是无法避免成本的上升。
专利文献1和2中公开了包含pin型光电转换元件结构的薄膜太阳能电池。具体地说，专利文献1中记载的薄膜太阳能电池具有pin型非晶的光电转换元件结构，该pin型非晶的光电转换元件结构具有含微晶相的非晶硅(μc-Si)的层。即，专利文献1中记载的薄膜太阳能电池，在形成发电层的pin层中，由包含微晶相的半导体层(μc-Si)形成p层，由非晶硅锗(a-SiGe)形成i层，同时在该p层和i层之间设置有带隙比p层宽、p型且低杂质浓度的界面层。该光电转换元件结构能够抑制光照射后的特性的劣化，同时能够实现效率的提高。
此外，专利文献2公开了太阳能电池，该太阳能电池包含抑制制造工艺中热扩散引起的界面特性的劣化、转换效率高的光电转换元件结构。专利文献2中，提出了形成发电层的pin层中，分别由包含微晶相的非晶硅系薄膜(μc-Si)形成p和n型半导体层，并且由非晶硅系膜形成i型半导体层的光电转换元件结构。此外，专利文献2提出了在p型或n型半导体层与i型半导体层之间设置有由多个层组成的界面半导体层的结构。其中，使i型半导体层侧的界面半导体层的杂质添加量比非晶半导体层侧的界面半导体层的杂质添加量少，由此使i型半导体层的p型半导体层侧接合界面中的带隙比i型半导体层的带隙宽。包含上述的光电转换元件结构的太阳能电池能够抑制界面特性的劣化。
专利文献1：特开2001-168354号公报
专利文献2：特开2003-8038号公报
发明内容
如前所述，专利文献1和2均是通过使pin层的由3层构成的发电层的内部的结构变化，抑制界面特性的劣化，从而实现转换效率的提高。
即，专利文献1示出了在p层和i层之间设置界面层的结构，另一方面，专利文献2也示出了在i型半导体层与p型或n型半导体层之间设置界面半导体层的结构。换言之，专利文献1和2对于与pin层接触形成的电极层相伴的接触电阻伴有的问题，均没有指出。
本发明的目的在于提供能够降低电极层和半导体层之间的接触电阻的光电转换元件结构和太阳能电池。
本发明的另一目的在于提供通过改善与发电层接触形成的电极层而使转换效率高、经济性高的光电转换元件结构和太阳能电池。
本发明的又一目的在于提供通过改善发电层自身的结构来使接触电阻降低的光电转换元件结构和太阳能电池。
根据本发明的第1方式，得到光电转换元件结构，其特征在于，包含第1电极层、第2电极层和在上述第1和第2电极层之间设置的1个或多个发电层合体，
上述发电层合体包含p型半导体层、与该p型半导体层接触形成的i型半导体层和与上述i型半导体层接触形成的n型半导体层，
上述1个发电层合体或上述多个发电层合体中的上述第1电极侧的发电层合体的上述p型半导体层与上述第1电极层接触，上述1个发电层合体或上述多个发电层合体中的上述第1电极侧的发电层合体的上述n型半导体层与上述第2电极层接触，
上述第2电极层的至少与上述n型半导体层接触的部分包含具有与上述接触的n型半导体层的电子亲和力(n型硅的情况下，绝对值为4.09eV)相比绝对值小的功函数的金属。
根据本发明的第2方式，得到光电转换元件结构，其特征在于，上述第2电极层的至少与上述n型半导体层接触的部分由选自镁、铪、钇中的至少一种的单质金属或其合金形成。
根据本发明的第3方式，得到上述任一项所述的光电转换元件结构，其特征在于，上述发电层合体的至少1个中的上述i型半导体层由晶体硅、微晶非晶硅和非晶硅中的任一种形成。
根据本发明的第4方式，得到上述任一项所述的光电转换元件结构，其特征在于，上述第2电极层由金属构成，该金属具有与上述接触的n型半导体层的电子亲和力相比绝对值小的功函数。
根据本发明的第5方式，得到上述任一项所述的光电转换元件结构，其特征在于，上述第2电极层的与上述n型半导体层接触的部分以外的部分由电导率比具有与上述接触的n型半导体层的电子亲和力相比绝对值小的功函数的金属高的金属形成。
根据本发明的第6方式，得到上述任一项所述的光电转换元件结构，其特征在于，上述第1电极层的至少与上述p型半导体层接触的部分包含金属，该金属具有与上述接触的p型半导体层的电荷带(荷電子帯)的上限的能级(p型硅的情况下，绝对值为5.17eV)相比绝对值大的功函数。
根据本发明的第7方式，得到光电转换元件结构，其特征在于，包含第1电极层、第2电极层、和在上述第1和第2电极层之间设置的1个或多个发电层合体，
上述发电层合体包含p型半导体层、与该p型半导体层接触形成的i型半导体层和与上述i型半导体层接触形成的n型半导体层，
上述1个发电层合体或上述多个发电层合体中的上述第1电极侧的发电层合体的上述p型半导体层与上述第1电极层接触，上述1个发电层合体或上述多个发电层合体中的上述第1电极侧的发电层合体的上述n型半导体层与上述第2电极层接触，
上述第1电极层的至少与上述p型半导体层接触的部分包含金属，该金属具有与上述接触的p型半导体层的电荷带的上限的能级相比绝对值大的功函数。
根据本发明的第8方式，得到光电转换元件结构，其特征在于，上述第1电极层的至少与上述p型半导体层接触的部分由选自镍(Ni)、铱(Ir)、钯(Pd)和铂(Pt)中的至少一种的单质金属或其合金形成。
根据本发明的第9方式，得到光电转换元件结构，其特征在于，上述第1电极层由金属构成，该金属具有与上述接触的p型半导体层的电荷带的上限的能级相比绝对值大的功函数。
根据本发明的第10方式，得到光电转换元件结构，其特征在于，上述第1电极层的与上述p型半导体层接触的部分以外的部分由电导率比具有与上述接触的p型半导体层的电荷带的上限的能级相比绝对值大的功函数的金属高的金属形成。
根据本发明的第11方式，得到光电转换元件结构，其特征在于，具有i型半导体层、与该i型半导体层的一表面接触形成的一导电型的半导体层、和与上述i型半导体层的另外表面直接接触形成且由预先确定的金属形成的金属层。
根据本发明的第12方式，得到光电转换元件结构，其特征在于，上述金属层与上述i型半导体层和上述一导电型的半导体层一起，形成了发电区域。
根据本发明的第13方式，得到光电转换元件结构，其特征在于，具有与上述一导电型的半导体层直接或介由其他发电区域接触而形成的电极。
根据本发明的第14方式，得到光电转换元件结构，其特征在于，具有与上述金属层接触形成的其它电极层。
根据本发明的第15方式，得到光电转换元件结构，其特征在于，与上述i型半导体层的一表面接触形成的一导电型的半导体层是p型半导体层。
根据本发明的第16方式，得到上述11～15的方式中的任一项所述的光电转换元件结构，其特征在于，与上述i型半导体层的另外表面接触形成的金属层的金属是具有与构成上述i型半导体层的半导体是n型半导体时的该n型半导体的电子亲和力相比绝对值小的功函数的金属。
根据本发明的第17方式，得到上述11～14的方式中的任一项所述的光电转换元件结构，其特征在于，与上述i型半导体层的一表面接触形成的一导电型的半导体层是n型半导体层，与上述i型半导体层的另外表面接触形成的金属层的金属是具有与构成上述i型半导体层的半导体为p型半导体时的该p型半导体的电荷带的上限的能级相比绝对值大的功函数的金属。
根据本发明的第18方式，得到光电转换元件结构，其特征在于，包含第1电极层、第2电极层和在上述第1和第2电极层之间设置的1个或多个发电层合体；上述发电层合体包含p型半导体层、与该p型半导体层接触形成的i型半导体层和与上述i型半导体层接触形成的n型半导体层；上述1个发电层合体或上述多个发电层合体中的上述第1电极侧的发电层合体的上述p型半导体层与上述第1电极层接触，上述1个发电层合体或上述多个发电层合体中的上述第1电极侧的发电层合体的上述n型半导体层与上述第2电极层接触；上述第2电极层的至少与上述n型半导体层接触的部分包含具有与Al和Ag相比绝对值小的功函数的金属。
根据本发明的第19方式，得到第18方式所述的光电转换元件结构，其特征在于，上述第2电极层的至少与上述n型半导体层接触的部分由选自锰和锆中的至少一种的单质金属或其合金形成。
根据本发明的第20方式，得到光电转换元件结构，其特征在于，包含第1电极层、第2电极层和在上述第1和第2电极层之间设置的1个或多个发电层合体；上述发电层合体包含p型半导体层、与该p型半导体层接触形成的i型半导体层和与上述i型半导体层接触形成的n型半导体层；上述1个发电层合体或上述多个发电层合体中的上述第1电极侧的发电层合体的上述p型半导体层与上述第1电极层接触，上述1个发电层合体或上述多个发电层合体中的上述第1电极侧的发电层合体的上述n型半导体层与上述第2电极层接触；上述第1电极层的至少与上述p型半导体层接触的部分包含具有与ZnO相比绝对值大的功函数的金属。
根据本发明的第21方式，得到第20方式所述的光电转换元件结构，其特征在于，上述第1电极层的至少与上述p型半导体层接触的部分由钴(Co)或其合金形成。
根据本发明的第22方式，得到上述11～21方式的任一项所述的光电转换元件结构，其特征在于，上述i型半导体层由硅形成。
根据本发明的第23方式，得到太阳能电池，其特征在于，包含上述11～22方式中的任一项所述的光电转换元件结构。
根据本发明，通过降低电极层和半导体层的接触电阻，能够得到转换效率高的光电转换元件结构。
附图说明
图1是表示说明本发明的原理的光电转换元件结构的等价电路的图。
图2是说明本发明的一实施方式涉及的光电转换元件结构的概要图。
图3A是表示n-Si与金属的接触前的功函数存在φs＜φm的关系时的带结构和接触后的带结构的图。
图3B是表示n-Si与金属的接触前的功函数存在φs＜φm的关系时的带结构和接触后的带结构的图。
图4A是表示n-Si与金属的接触前的功函数存在φs＞φm的关系时的带结构和接触后的带结构的图。
图4B是n-Si与金属的接触前的功函数存在φs＞φm的关系时的带结构和接触后的带结构的图。
图5是说明本发明的另一实施方式涉及的光电转换元件结构的概要图。
图6是说明本发明的又一实施方式涉及的光电转换元件结构的概要图。
附图标记的说明
10  发电层(电池部分)
21  第1电极
22  第2电极
25  发电层
251 p型半导体层
252 n型半导体层
253 i型半导体层
30  附加电极层
35  金属层
具体实施方式
参照图1所示的光电转换元件的等价电路图，说明本发明的原理。如图所示，构成太阳能电池的光电转换元件结构可以由通过光的照射而产生电的发电层(即电池部分)10、与因该发电层10的接合界面的失配(不整合)而流动的漏电流相当的并联电阻Rsh、与夹持发电层10的2个电极之间的电阻Rs等价地表示。其中，电阻Rs是各电极自身的电阻、和各电极与形成发电层的半导体层之间的接触电阻的合成电阻。由图可知，负荷在2个电阻Rs间连接。
本发明的原理在于通过降低图1所示的等价电路中电阻Rs的接触电阻，从而使光电转换元件结构的转换效率提高。
参照图2，本发明的第1实施方式涉及的光电转换元件结构，如图2所示，具有由透明电极形成的第1电极21、如Al或Ag那样具有高反射率的第2电极22、在第1和第2电极21、22之间设置的pin的3层构成的发电层25。发电层25具有与第1电极21接触形成的p型半导体层251、与第2电极22接触形成的n型半导体层252、和在p型半导体层251与n型半导体层252之间设置的i型半导体层253。再有，该实施方式中，作为构成发电层25的p型半导体层251、i型半导体层253和n型半导体层252，使用晶体硅(Si)。在这种情况下，由晶体硅形成的p-Si的电荷带的上限的能级为-5.17eV，将具有与其相比绝对值大的功函数的金属用于第1电极21。或者，将具有与ZnO相比绝对值大的功函数的金属或其合金用于第1电极21。
另一方面，n-Si的电子亲和力为-4.09eV，将具有绝对值比其小的功函数的金属用于第2电极22。或者，将具有绝对值比Al和Ag小的功函数的金属或其合金用于第2电极22。
本发明的第1实施方式中，关注作为第2电极22的背面电极的功函数，使第2电极22与n型半导体层252之间的接触电阻降低。再有，作为第2电极22，通常使用具有-4.28eV的功函数的铝(Al)或具有-4.26eV的功函数的银(Ag)。
其中，用具有绝对值比半导体(n-Si)的电子亲和力-4.09eV小的功函数的金属、优选反射率高的金属材料形成第2电极22。具体地，通过由n-Si构成的半导体、和形成欧姆接触的金属材料形成第2电极22，与Al、Ag相比能够使接触电阻降低。
此外，对于由n-Si构成的半导体，通过使用形成肖特基势垒的金属材料，与Al、Ag相比也能够使接触电阻降低。
能够使上述的接触电阻降低的金属材料，可通过考虑与n-Si之间的功函数来决定。以下将金属材料的功函数记为φm，用φs表示半导体(此处为n-Si)的电子亲和力。
现在参照图3A和图3B，示出了功函数对于真空能级的关系用绝对值计为φm＜φs时的接触前的状态和接触后的状态。如果这样的半导体与金属接触，如图3B所示，形成欧姆接触。n-Si的φs如前所述，为-4.09eV，因此具有与该n-Si的功函数相比绝对值小的功函数φm的金属材料可利用功函数-3.7eV的Mg、功函数-3.9的Hf、功函数-3.1eV的Y等，通过使用这些金属，与使Al、Ag与n-Si接触时相比，能够使接触电阻降低。
另一方面，通过使用具有与Al和Ag相比绝对值小的功函数的金属，与使Al、Ag与n-Si接触时相比，也能够使接触电阻降低。
例如，功函数-4.1eV的Mn和Zr与-4.28eV的Al、-4.26eV的Ag同样地，与n-Si的功函数-4.09eV相比略小，存在φs＜φm的关系。这种情况下，在上述的金属材料与n-Si接触前的状态下，处于图4A所示的状态，另一方面，如果两者接触，如图4B所示，形成肖特基势垒(障壁)。但是，如果将n-Si的表面强烈地掺杂，利用隧道电流通过势垒形成欧姆接触与Al、Ag相同。
前述的Mn、Zr的功函数与Al、Ag相比，接近n-Si的功函数φs，具有绝对值比Al和Ag小的功函数，因此即使由Mn、Zr形成第2电极22，与使用了Al、Ag时相比，也能够使接触电阻降低。
实际上，Al与n-Si的接触电阻为5×10-6Ω·cm2左右，但对于金属的功函数φm与n-Si的功函数φs之差为0.05eV的Mn、Zr而言，能够实现5×10-12Ω·cm2左右的接触电阻。此外，在其他的Mg、Hf、Y中，能够使接触电阻降低到10-8Ω·cm2左右。
在上述的实例中，对于图2所示的第2电极22和n-Si之间的接触电阻进行了考察，在第1电极21和p-Si251中，也能够使p-Si与第1电极21间的接触电阻降低。通常，p-Si的电荷带的上限的能级φs为-5.17eV，将具有绝对值比其大的功函数的金属用于第1电极21。例如，使用具有绝对值比p-Si的电荷带的上限的能级φs(-5.17eV)大的功函数φm的金属(即φs＜φm)时，形成欧姆接触。具体地说，Ni的功函数φm为-5.2eV，因此使用Ni作为电极材料时，能够降低与p-Si的接触电阻。由于Ir、Pd、Pt的功函数分别为-5.3eV、-5.2eV、-5.7eV，因此它们也适合。
参照图5，说明本发明的另一实施方式涉及的光电转换元件结构。图5所示的光电转换元件结构，具有在n-Si252和第2电极22之间设置了附加金属层30的结构。作为图示的第2电极22，通常使用Al或Ag，确保该第2电极22中的反射率，在第2电极22和n-Si252之间设置了接触电阻降低用附加金属层30。作为形成附加金属层30的金属，通过选择例如具有与形成第2电极22的Al、Ag的功函数φm相比绝对值小的功函数的金属(Mg、Mn、Hf、Y、Zr等)，能够使接触电阻降低。通过使用这样的金属，能够在与n-Si252之间基本上形成欧姆接触。
此外，为了减小具有-5.15eV的功函数的p-Si251与第1电极21的接触电阻，在p-Si251与第1电极21之间可以设置附加金属层。作为p-Si侧的电极，使用了具有-4.25eV的功函数φm的ZnO时，通过使用-5.0eV的Co、-5.2eV的Ni等具有与ZnO相比绝对值大的功函数的金属材料作为附加金属层，能够降低接触电阻。
参照图6，本发明的又一实施方式涉及的光电转换元件结构，在图2所示的光电转换元件结构中，具有将n-Si252替代为金属层35的结构，即省略了n-Si252的结构。作为该金属层35，可使用具有与n-Si252同等程度的功函数φm的金属材料。作为具有与具有-4.09eV的功函数φs的n-Si252同等程度的功函数φm的金属，可以使用具有-4.1eV的功函数φm的Mn、Zr。
图6中，示出了将n-Si252替代为金属层35的实例，但也可以将具有-5.15eV的功函数φs的p-Si251替代为金属层。在这种情况下，即使使用功函数-5.0eV的Co、-5.2eV的Ni、-5.2eV的Pd、-5.3eV的Ir等作为形成金属层的金属材料，也能够使接触电阻降低。
前述的实施方式中，只对使用了晶体硅的情况进行了说明，但本发明并不受其任何限制，对于使用了非晶硅、含微晶的非晶硅(μc-Si)的情况也可同样适用。这种情况下，当然要考虑非晶硅和μc-Si的功函数来选择金属。
此外，本发明并不限于硅，应用于使用了其他半导体的情况，也能够降低接触电阻，能够改善转换效率。
产业上的利用可能性
本发明涉及的光电转换元件不仅可以应用于太阳能电池，而且能够应用于其他电子设备用光电转换元件。

Claims (23)

1.一种光电转换元件结构，其特征在于，包含第1电极层、第2电极层和在所述第1和第2电极层之间设置的1个或多个发电层合体，
所述发电层合体包含p型半导体层、与该p型半导体层接触形成的i型半导体层和与所述i型半导体层接触形成的n型半导体层，
所述1个发电层合体或所述多个发电层合体中的所述第1电极侧的发电层合体的所述p型半导体层与所述第1电极层接触，所述1个发电层合体或所述多个发电层合体中的所述第1电极侧的发电层合体的所述n型半导体层与所述第2电极层接触，
所述第2电极层的至少与所述n型半导体层接触的部分包含具有与所述接触的n型半导体层的电子亲和力相比绝对值小的功函数的金属。
2.根据权利要求1所述的光电转换元件结构，其特征在于，所述第2电极层的至少与所述n型半导体层接触的部分由选自镁、铪、钇中的至少一种的单质金属或其合金形成。
3.根据权利要求1或2所述的光电转换元件结构，其特征在于，所述发电层合体的至少1个中的所述i型半导体层由晶体硅、微晶非晶硅和非晶硅中的任一种形成。
4.根据权利要求1～3中任一项所述的光电转换元件结构，其特征在于，所述第2电极层由金属构成，该金属具有与所述接触的n型半导体层的电子亲和力相比绝对值小的功函数。
5.根据权利要求1～3中任一项所述的光电转换元件结构，其特征在于，所述第2电极层的与所述n型半导体层接触的部分以外的部分由电导率比具有与所述接触的n型半导体层的电子亲和力相比绝对值小的功函数的金属高的金属形成。
6.根据权利要求1～5中任一项所述的光电转换元件结构，其特征在于，所述第1电极层的至少与所述p型半导体层接触的部分包含金属，该金属具有与所述接触的p型半导体层的电荷带的上限的能级相比绝对值大的功函数。
7.一种光电转换元件结构，其特征在于，包含第1电极层、第2电极层、和在所述第1和第2电极层之间设置的1个或多个发电层合体，
所述发电层合体包含p型半导体层、与该p型半导体层接触形成的i型半导体层和与所述i型半导体层接触形成的n型半导体层，
所述1个发电层合体或所述多个发电层合体中的所述第1电极侧的发电层合体的所述p型半导体层与所述第1电极层接触，所述1个发电层合体或所述多个发电层合体中的所述第1电极侧的发电层合体的所述n型半导体层与所述第2电极层接触，
所述第1电极层的至少与所述p型半导体层接触的部分包含金属，该金属具有与所述接触的p型半导体层的电荷带的上限的能级相比绝对值大的功函数。
8.根据权利要求6或7所述的光电转换元件结构，其特征在于，所述第1电极层的至少与所述p型半导体层接触的部分由选自镍(Ni)、铱(Ir)、钯(Pd)和铂(Pt)中的至少一种的单质金属或其合金形成。
9.根据权利要求6～8中任一项所述的光电转换元件结构，其特征在于，所述第1电极层由金属构成，该金属具有与所述接触的p型半导体层的电荷带的上限的能级相比绝对值大的功函数。
10.根据权利要求6～8中任一项所述的光电转换元件结构，其特征在于，所述第1电极层的与所述p型半导体层接触的部分以外的部分由电导率比具有与所述接触的p型半导体层的电荷带的上限的能级相比绝对值大的功函数的金属高的金属形成。
11.一种光电转换元件结构，其特征在于，具有i型半导体层、与该i型半导体层的一表面接触形成的一导电型的半导体层、和与所述i型半导体层的另一表面直接接触形成且由预先确定的金属形成的金属层。
12.根据权利要求11所述的光电转换元件结构，其特征在于，所述金属层与所述i型半导体层和所述一导电型的半导体层一起，形成了发电区域。
13.根据权利要求11或12所述的光电转换元件结构，其特征在于，具有与所述一导电型的半导体层直接或介由其他发电区域接触而形成的电极。
14.根据权利要求11～13中任一项所述的光电转换元件结构，其特征在于，具有与所述金属层接触形成的其它电极层。
15.根据权利要求11～14中任一项所述的光电转换元件结构，其特征在于，与所述i型半导体层的一表面接触形成的一导电型的半导体层是p型半导体层。
16.根据权利要求11～15中任一项所述的光电转换元件结构，其特征在于，与所述i型半导体层的另外表面接触形成的金属层的金属是具有与构成所述i型半导体层的半导体是n型半导体时的该n型半导体的电子亲和力相比绝对值小的功函数的金属。
17.根据权利要求11～14中任一项所述的光电转换元件结构，其特征在于，与所述i型半导体层的一表面接触形成的一导电型的半导体层是n型半导体层，与所述i型半导体层的另外表面接触形成的金属层的金属是具有与构成所述i型半导体层的半导体为p型半导体时的该p型半导体的电荷带的上限的能级相比绝对值大的功函数的金属。
18.一种光电转换元件结构，其特征在于，包含第1电极层、第2电极层和在所述第1和第2电极层之间设置的1个或多个发电层合体，
所述发电层合体包含p型半导体层、与该p型半导体层接触形成的i型半导体层和与所述i型半导体层接触形成的n型半导体层，
所述1个发电层合体或所述多个发电层合体中的所述第1电极侧的发电层合体的所述p型半导体层与所述第1电极层接触，所述1个发电层合体或所述多个发电层合体中的所述第1电极侧的发电层合体的所述n型半导体层与所述第2电极层接触，
所述第2电极层的至少与所述n型半导体层接触的部分包含具有与Al和Ag相比绝对值小的功函数的金属。
19.根据权利要求18所述的光电转换元件结构，其特征在于，所述第2电极层的至少与所述n型半导体层接触的部分由选自锰和锆中的至少一种的单质金属或其合金形成。
20.一种光电转换元件结构，其特征在于，包含第1电极层、第2电极层和在所述第1和第2电极层之间设置的1个或多个发电层合体，
所述发电层合体包含p型半导体层、与该p型半导体层接触形成的i型半导体层和与所述i型半导体层接触形成的n型半导体层，
所述1个发电层合体或所述多个发电层合体中的所述第1电极侧的发电层合体的所述p型半导体层与所述第1电极层接触，所述1个发电层合体或所述多个发电层合体中的所述第1电极侧的发电层合体的所述n型半导体层与所述第2电极层接触，
所述第1电极层的至少与所述p型半导体层接触的部分包含具有与ZnO相比绝对值大的功函数的金属。
21.根据权利要求20所述的光电转换元件结构，其特征在于，所述第1电极层的至少与所述p型半导体层接触的部分由钴(Co)或其合金形成。
22.根据权利要求11～21中任一项所述的光电转换元件结构，其特征在于，所述i型半导体层由硅形成。
23.一种太阳能电池，其特征在于，包含权利要求1～22中任一项所述的光电转换元件结构。
CN2009801076594A 2008-03-07 2009-03-02 光电转换元件结构和太阳能电池 Pending CN101960613A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008-057314 2008-03-07
JP2008057314 2008-03-07
PCT/JP2009/053814 WO2009110403A1 (ja) 2008-03-07 2009-03-02 光電変換素子構造及び太陽電池

Publications (1)

Publication Number Publication Date
CN101960613A true CN101960613A (zh) 2011-01-26

Family

ID=41055959

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009801076594A Pending CN101960613A (zh) 2008-03-07 2009-03-02 光电转换元件结构和太阳能电池

Country Status (7)

Country Link
US (1) US20110000533A1 (zh)
JP (1) JPWO2009110403A1 (zh)
KR (1) KR101210502B1 (zh)
CN (1) CN101960613A (zh)
DE (1) DE112009000498T5 (zh)
TW (1) TW201001727A (zh)
WO (1) WO2009110403A1 (zh)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102169916A (zh) * 2011-02-16 2011-08-31 北京大学 基于一维半导体纳米材料的级联太阳能电池及其制备方法
CN102646794A (zh) * 2012-04-23 2012-08-22 华北电力大学 一种p-i-n型聚合物太阳能电池及其制备方法
CN103077976A (zh) * 2012-08-17 2013-05-01 常州天合光能有限公司 一种提高n型衬底hit太阳能电池开路电压的方法
CN103311367A (zh) * 2013-05-31 2013-09-18 浙江正泰太阳能科技有限公司 一种晶体硅太阳能电池的制备方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101818265B1 (ko) * 2009-11-06 2018-01-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN104465318B (zh) * 2009-11-06 2018-04-24 株式会社半导体能源研究所 制造半导体器件的方法
JP5307280B2 (ja) * 2011-08-15 2013-10-02 シャープ株式会社 薄膜光電変換素子
TWI578553B (zh) * 2012-01-05 2017-04-11 洪儒生 結晶矽太陽能電池及其製造方法
US9577134B2 (en) * 2013-12-09 2017-02-21 Sunpower Corporation Solar cell emitter region fabrication using self-aligned implant and cap
KR101867854B1 (ko) * 2016-09-23 2018-06-15 엘지전자 주식회사 태양 전지
CN106711273A (zh) * 2017-02-22 2017-05-24 东华理工大学 一种变掺杂变组分AlGaAsGaAs核辐射探测器

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4378460A (en) * 1981-08-31 1983-03-29 Rca Corporation Metal electrode for amorphous silicon solar cells
JP2005109360A (ja) * 2003-10-01 2005-04-21 National Institute Of Advanced Industrial & Technology ヘテロ接合太陽電池

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2926754A1 (de) * 1979-07-03 1981-01-15 Licentia Gmbh Solarzellen-anordnung
JPS5674970A (en) * 1979-11-26 1981-06-20 Shunpei Yamazaki Photoelectric conversion device and its manufacture
JPS5752176A (en) * 1980-09-16 1982-03-27 Semiconductor Energy Lab Co Ltd Semiconductor device
JPH06188443A (ja) * 1981-12-28 1994-07-08 Kanegafuchi Chem Ind Co Ltd 可撓性光起電力装置
US4419530A (en) * 1982-02-11 1983-12-06 Energy Conversion Devices, Inc. Solar cell and method for producing same
JPS6193674A (ja) * 1984-10-13 1986-05-12 Sumitomo Electric Ind Ltd アモルフアスシリコン太陽電池
US4680611A (en) * 1984-12-28 1987-07-14 Sohio Commercial Development Co. Multilayer ohmic contact for p-type semiconductor and method of making same
US4647711A (en) * 1985-01-29 1987-03-03 The Standard Oil Company Stable front contact current collector for photovoltaic devices and method of making same
JPS61203665A (ja) * 1985-03-06 1986-09-09 Fujitsu Ltd アモルフアスシリコン型フオトダイオ−ドの製造方法
JPS63169770A (ja) * 1987-01-08 1988-07-13 Sharp Corp アモルフアス太陽電池モジユ−ル
JPS63194372A (ja) * 1987-02-09 1988-08-11 Fuji Electric Co Ltd 非晶質光電変換装置
JPS63233572A (ja) * 1987-03-22 1988-09-29 Nippon Denso Co Ltd アモルフアスシリコン太陽電池
JPH01152765A (ja) * 1987-12-10 1989-06-15 Matsushita Electric Ind Co Ltd 非晶質シリコン太陽電池の製造方法
JPH01259571A (ja) * 1988-04-08 1989-10-17 Matsushita Electric Ind Co Ltd 太陽電池
JPH02218174A (ja) * 1989-02-17 1990-08-30 Mitsubishi Electric Corp 光電変換半導体装置
JPH07326783A (ja) * 1994-05-30 1995-12-12 Canon Inc 光起電力素子の形成方法及びそれに用いる薄膜製造装置
CA2232857C (en) * 1995-10-05 2003-05-13 Jalal Salami Structure and fabrication process for self-aligned locally deep-diffused emitter (salde) solar cell
JP2922465B2 (ja) * 1996-08-29 1999-07-26 時夫 中田 薄膜太陽電池の製造方法
JP4253966B2 (ja) 1999-12-06 2009-04-15 富士電機システムズ株式会社 非晶質薄膜太陽電池
JP2001257371A (ja) * 2000-03-13 2001-09-21 Hitachi Ltd 太陽電池作製方法及び太陽電池並びに集光型太陽電池モジュール
JP4171162B2 (ja) * 2000-05-30 2008-10-22 三洋電機株式会社 光起電力素子およびその製造方法
JP2003008038A (ja) 2001-06-27 2003-01-10 Fuji Electric Corp Res & Dev Ltd 薄膜太陽電池とその製造方法
JP2004296491A (ja) * 2003-03-25 2004-10-21 Sanyo Electric Co Ltd 半導体装置
ES2405597T3 (es) * 2003-07-24 2013-05-31 Kaneka Corporation Convertidor fotoeléctrico apilado
JP4511146B2 (ja) * 2003-09-26 2010-07-28 三洋電機株式会社 光起電力素子およびその製造方法
JP2007005663A (ja) * 2005-06-27 2007-01-11 Matsushita Electric Ind Co Ltd 半導体装置
JP5242009B2 (ja) * 2005-09-29 2013-07-24 国立大学法人名古屋大学 カーボンナノウォールを用いた光起電力素子

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4378460A (en) * 1981-08-31 1983-03-29 Rca Corporation Metal electrode for amorphous silicon solar cells
JP2005109360A (ja) * 2003-10-01 2005-04-21 National Institute Of Advanced Industrial & Technology ヘテロ接合太陽電池

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102169916A (zh) * 2011-02-16 2011-08-31 北京大学 基于一维半导体纳米材料的级联太阳能电池及其制备方法
CN102169916B (zh) * 2011-02-16 2012-10-10 北京大学 基于一维半导体纳米材料的级联太阳能电池及其制备方法
CN102646794A (zh) * 2012-04-23 2012-08-22 华北电力大学 一种p-i-n型聚合物太阳能电池及其制备方法
CN103077976A (zh) * 2012-08-17 2013-05-01 常州天合光能有限公司 一种提高n型衬底hit太阳能电池开路电压的方法
CN103311367A (zh) * 2013-05-31 2013-09-18 浙江正泰太阳能科技有限公司 一种晶体硅太阳能电池的制备方法

Also Published As

Publication number Publication date
TW201001727A (en) 2010-01-01
KR20100109566A (ko) 2010-10-08
WO2009110403A1 (ja) 2009-09-11
US20110000533A1 (en) 2011-01-06
JPWO2009110403A1 (ja) 2011-07-14
KR101210502B1 (ko) 2012-12-10
DE112009000498T5 (de) 2011-02-24

Similar Documents

Publication Publication Date Title
CN101960613A (zh) 光电转换元件结构和太阳能电池
Hermle et al. Passivating contacts and tandem concepts: Approaches for the highest silicon-based solar cell efficiencies
Battaglia et al. High-efficiency crystalline silicon solar cells: status and perspectives
CN109728103B (zh) 太阳能电池
Stodolny et al. Novel schemes of p+ poly-Si hydrogenation implemented in industrial 6 bifacial front-and-rear passivating contacts solar cells
US8927853B2 (en) Solar cell
US8084683B2 (en) Low-cost multi-junction solar cells and methods for their production
CN103137767B (zh) 全背电极异质结太阳能电池
KR101895025B1 (ko) 태양 전지 모듈 및 그의 제조 방법
CN111656538B (zh) 太阳能电池、多结型太阳能电池、太阳能电池模块及太阳光发电系统
JP2010531064A (ja) 単ｐ−ｎ接合タンデム型光起電力デバイス
CN110828585A (zh) 一种钝化接触太阳能电池及其制作方法
WO2020059053A1 (ja) 太陽電池、多接合型太陽電池、太陽電池モジュール及び太陽光発電システム
CN112133763A (zh) 一种p型晶体硅太阳能电池、生产方法
Tao Screen-printed front junction n-type silicon solar cells
EP2413384A2 (en) Photovoltaic device
US20140166091A1 (en) Photovoltaic device with double-junction
JP2012038783A (ja) 光電変換素子
JP5248821B2 (ja) 複合型太陽電池
Singh et al. Tunnel MIS solar cells
CN112466975B (zh) 光伏器件
CN112466979B (zh) 光伏器件
CN112466980B (zh) 碳化硅电池
EP4425572A2 (en) Solar cell and preparation method thereof
CN118398693A (zh) 太阳能电池及光伏组件

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Free format text: FORMER OWNER: TOKYO ELECTRON LTD.

Effective date: 20131024

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20131024

Address after: Miyagi Prefecture in Japan

Applicant after: Tokoku University of National University Corp.

Address before: Miyagi Prefecture in Japan

Applicant before: Tokoku University of National University Corp.

Applicant before: Tokyo Electron Limited

C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20110126