KR101697792B1 - 포토레지스트 패턴 상의 코팅을 위한 수성 조성물 - Google Patents

포토레지스트 패턴 상의 코팅을 위한 수성 조성물 Download PDF

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KR101697792B1
KR101697792B1 KR1020107028937A KR20107028937A KR101697792B1 KR 101697792 B1 KR101697792 B1 KR 101697792B1 KR 1020107028937 A KR1020107028937 A KR 1020107028937A KR 20107028937 A KR20107028937 A KR 20107028937A KR 101697792 B1 KR101697792 B1 KR 101697792B1
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South Korea
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polymer
photoresist
composition
alkyl
alkylene
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KR1020107028937A
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English (en)
Korean (ko)
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KR20110018921A (ko
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무티아 티야가라잔
이 카오
성은 홍
랄프 알. 다멜
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메르크 파텐트 게엠베하
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D133/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
    • C09D133/04—Homopolymers or copolymers of esters
    • C09D133/14—Homopolymers or copolymers of esters of esters containing halogen, nitrogen, sulfur or oxygen atoms in addition to the carboxy oxygen
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D133/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
    • C09D133/04—Homopolymers or copolymers of esters
    • C09D133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C09D133/062—Copolymers with monomers not covered by C09D133/06
    • C09D133/066—Copolymers with monomers not covered by C09D133/06 containing -OH groups
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D139/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen; Coating compositions based on derivatives of such polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

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  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
  • Paints Or Removers (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020107028937A 2008-06-18 2009-06-17 포토레지스트 패턴 상의 코팅을 위한 수성 조성물 KR101697792B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/141,307 US7745077B2 (en) 2008-06-18 2008-06-18 Composition for coating over a photoresist pattern
US12/141,307 2008-06-18
PCT/IB2009/005975 WO2009153648A1 (en) 2008-06-18 2009-06-17 Aqueous composition for coating over a photoresist pattern

Publications (2)

Publication Number Publication Date
KR20110018921A KR20110018921A (ko) 2011-02-24
KR101697792B1 true KR101697792B1 (ko) 2017-01-18

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KR1020107028937A KR101697792B1 (ko) 2008-06-18 2009-06-17 포토레지스트 패턴 상의 코팅을 위한 수성 조성물

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US (1) US7745077B2 (US20090317739A1-20091224-C00013.png)
EP (1) EP2294149B1 (US20090317739A1-20091224-C00013.png)
JP (1) JP5521253B2 (US20090317739A1-20091224-C00013.png)
KR (1) KR101697792B1 (US20090317739A1-20091224-C00013.png)
CN (1) CN102066509B (US20090317739A1-20091224-C00013.png)
TW (1) TWI459146B (US20090317739A1-20091224-C00013.png)
WO (1) WO2009153648A1 (US20090317739A1-20091224-C00013.png)

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