KR101599649B1 - 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법 - Google Patents

노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법 Download PDF

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KR101599649B1
KR101599649B1 KR1020147003636A KR20147003636A KR101599649B1 KR 101599649 B1 KR101599649 B1 KR 101599649B1 KR 1020147003636 A KR1020147003636 A KR 1020147003636A KR 20147003636 A KR20147003636 A KR 20147003636A KR 101599649 B1 KR101599649 B1 KR 101599649B1
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South Korea
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liquid
substrate
substrate stage
recovered
recovery
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Expired - Fee Related
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Korean (ko)
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KR20140027560A (ko
Inventor
노부타카 마고메
나오유키 고바야시
야스유키 사카키바라
히로아키 다카이와
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가부시키가이샤 니콘
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70525—Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70533—Controlling abnormal operating mode, e.g. taking account of waiting time, decision to rework or rework flow
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70758—Drive means, e.g. actuators, motors for long- or short-stroke modules or fine or coarse driving
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70841—Constructional issues related to vacuum environment, e.g. load-lock chamber
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/709—Vibration, e.g. vibration detection, compensation, suppression or isolation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optics & Photonics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020147003636A 2003-07-28 2004-07-26 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법 Expired - Fee Related KR101599649B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2003281183 2003-07-28
JPJP-P-2003-281183 2003-07-28
JPJP-P-2004-045104 2004-02-20
JP2004045104 2004-02-20
PCT/JP2004/010991 WO2005010962A1 (ja) 2003-07-28 2004-07-26 露光装置及びデバイス製造方法、並びに露光装置の制御方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020137015069A Division KR101414896B1 (ko) 2003-07-28 2004-07-26 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법

Related Child Applications (2)

Application Number Title Priority Date Filing Date
KR1020157020237A Division KR101642670B1 (ko) 2003-07-28 2004-07-26 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법
KR1020147026289A Division KR101641011B1 (ko) 2003-07-28 2004-07-26 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법

Publications (2)

Publication Number Publication Date
KR20140027560A KR20140027560A (ko) 2014-03-06
KR101599649B1 true KR101599649B1 (ko) 2016-03-14

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ID=34106918

Family Applications (10)

Application Number Title Priority Date Filing Date
KR1020147003636A Expired - Fee Related KR101599649B1 (ko) 2003-07-28 2004-07-26 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법
KR1020117020276A Expired - Fee Related KR101298864B1 (ko) 2003-07-28 2004-07-26 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법
KR1020127010893A Expired - Fee Related KR101403117B1 (ko) 2003-07-28 2004-07-26 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법
KR1020157020237A Expired - Fee Related KR101642670B1 (ko) 2003-07-28 2004-07-26 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법
KR1020067001706A Expired - Fee Related KR101343720B1 (ko) 2003-07-28 2004-07-26 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의제어 방법
KR1020177028137A Expired - Fee Related KR101935709B1 (ko) 2003-07-28 2004-07-26 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법
KR1020167019452A Expired - Fee Related KR101785707B1 (ko) 2003-07-28 2004-07-26 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법
KR1020147026289A Expired - Fee Related KR101641011B1 (ko) 2003-07-28 2004-07-26 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법
KR1020137015069A Expired - Fee Related KR101414896B1 (ko) 2003-07-28 2004-07-26 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법
KR1020187037957A Ceased KR20190002749A (ko) 2003-07-28 2004-07-26 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법

Family Applications After (9)

Application Number Title Priority Date Filing Date
KR1020117020276A Expired - Fee Related KR101298864B1 (ko) 2003-07-28 2004-07-26 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법
KR1020127010893A Expired - Fee Related KR101403117B1 (ko) 2003-07-28 2004-07-26 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법
KR1020157020237A Expired - Fee Related KR101642670B1 (ko) 2003-07-28 2004-07-26 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법
KR1020067001706A Expired - Fee Related KR101343720B1 (ko) 2003-07-28 2004-07-26 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의제어 방법
KR1020177028137A Expired - Fee Related KR101935709B1 (ko) 2003-07-28 2004-07-26 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법
KR1020167019452A Expired - Fee Related KR101785707B1 (ko) 2003-07-28 2004-07-26 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법
KR1020147026289A Expired - Fee Related KR101641011B1 (ko) 2003-07-28 2004-07-26 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법
KR1020137015069A Expired - Fee Related KR101414896B1 (ko) 2003-07-28 2004-07-26 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법
KR1020187037957A Ceased KR20190002749A (ko) 2003-07-28 2004-07-26 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법

Country Status (7)

Country Link
US (7) US8451424B2 (enExample)
EP (4) EP2264533B1 (enExample)
JP (13) JP5170126B2 (enExample)
KR (10) KR101599649B1 (enExample)
CN (4) CN104122760B (enExample)
TW (8) TWI575563B (enExample)
WO (1) WO2005010962A1 (enExample)

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SG139733A1 (en) 2003-04-11 2008-02-29 Nikon Corp Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly
EP2161621B1 (en) 2003-04-11 2018-10-24 Nikon Corporation Cleanup method for optics in an immersion lithography apparatus, and corresponding immersion lithography apparatus
TWI424470B (zh) 2003-05-23 2014-01-21 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
TWI543235B (zh) 2003-06-19 2016-07-21 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
CN104122760B (zh) 2003-07-28 2017-04-19 株式会社尼康 曝光装置、器件制造方法
US7779781B2 (en) 2003-07-31 2010-08-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR20180120816A (ko) 2003-08-21 2018-11-06 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
TWI245163B (en) 2003-08-29 2005-12-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
SG145780A1 (en) * 2003-08-29 2008-09-29 Nikon Corp Exposure apparatus and device fabricating method
TWI475596B (zh) 2003-08-29 2015-03-01 尼康股份有限公司 A liquid recovery device, an exposure device, an exposure method, and an element manufacturing method
KR101111364B1 (ko) 2003-10-08 2012-02-27 가부시키가이샤 자오 니콘 기판 반송 장치 및 기판 반송 방법, 노광 장치 및 노광방법, 디바이스 제조 방법
JP2005159322A (ja) * 2003-10-31 2005-06-16 Nikon Corp 定盤、ステージ装置及び露光装置並びに露光方法
US7589822B2 (en) 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
WO2005076321A1 (ja) 2004-02-03 2005-08-18 Nikon Corporation 露光装置及びデバイス製造方法
JP5076497B2 (ja) 2004-02-20 2012-11-21 株式会社ニコン 露光装置、液体の供給方法及び回収方法、露光方法、並びにデバイス製造方法
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EP2264534B1 (en) 2013-07-17
HK1151106A1 (en) 2012-01-20
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JP2010118690A (ja) 2010-05-27
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