KR101256357B1 - 표시 장치, 및 표시 장치의 제조 방법 - Google Patents

표시 장치, 및 표시 장치의 제조 방법 Download PDF

Info

Publication number
KR101256357B1
KR101256357B1 KR1020050086858A KR20050086858A KR101256357B1 KR 101256357 B1 KR101256357 B1 KR 101256357B1 KR 1020050086858 A KR1020050086858 A KR 1020050086858A KR 20050086858 A KR20050086858 A KR 20050086858A KR 101256357 B1 KR101256357 B1 KR 101256357B1
Authority
KR
South Korea
Prior art keywords
insulating layer
layer
electrode layer
electrode
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020050086858A
Other languages
English (en)
Korean (ko)
Other versions
KR20060051388A (ko
Inventor
사토시 무라카미
히사시 오우타니
순페이 야마자키
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Publication of KR20060051388A publication Critical patent/KR20060051388A/ko
Application granted granted Critical
Publication of KR101256357B1 publication Critical patent/KR101256357B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/842—Containers
    • H10K50/8428—Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H05B33/04—Sealing arrangements, e.g. against humidity
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/842—Containers
    • H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/125—Active-matrix OLED [AMOLED] displays including organic TFTs [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3031—Two-side emission, e.g. transparent OLEDs [TOLED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80515—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/871—Self-supporting sealing arrangements
    • H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/871—Self-supporting sealing arrangements
    • H10K59/8723—Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Optical Filters (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
KR1020050086858A 2004-09-17 2005-09-16 표시 장치, 및 표시 장치의 제조 방법 Expired - Fee Related KR101256357B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2004-00272628 2004-09-17
JP2004272628 2004-09-17

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020120137885A Division KR101266023B1 (ko) 2004-09-17 2012-11-30 표시 장치, 및 표시 장치의 제조 방법

Publications (2)

Publication Number Publication Date
KR20060051388A KR20060051388A (ko) 2006-05-19
KR101256357B1 true KR101256357B1 (ko) 2013-04-25

Family

ID=36605931

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020050086858A Expired - Fee Related KR101256357B1 (ko) 2004-09-17 2005-09-16 표시 장치, 및 표시 장치의 제조 방법
KR1020120137885A Expired - Fee Related KR101266023B1 (ko) 2004-09-17 2012-11-30 표시 장치, 및 표시 장치의 제조 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020120137885A Expired - Fee Related KR101266023B1 (ko) 2004-09-17 2012-11-30 표시 장치, 및 표시 장치의 제조 방법

Country Status (4)

Country Link
US (3) US8350466B2 (enExample)
JP (15) JP5244958B2 (enExample)
KR (2) KR101256357B1 (enExample)
CN (2) CN100551179C (enExample)

Families Citing this family (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3989761B2 (ja) 2002-04-09 2007-10-10 株式会社半導体エネルギー研究所 半導体表示装置
US8217396B2 (en) 2004-07-30 2012-07-10 Semiconductor Energy Laboratory Co., Ltd. Display device comprising electrode layer contacting wiring in the connection region and extending to pixel region
US8350466B2 (en) 2004-09-17 2013-01-08 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
US7753751B2 (en) 2004-09-29 2010-07-13 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating the display device
US8772783B2 (en) * 2004-10-14 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Display device
KR100685804B1 (ko) * 2004-12-14 2007-02-22 삼성에스디아이 주식회사 유기전계발광소자 및 그의 제조방법
KR100712111B1 (ko) * 2004-12-14 2007-04-27 삼성에스디아이 주식회사 보조 전극 라인을 구비하는 유기전계발광소자 및 그의제조 방법
US20060197088A1 (en) * 2005-03-07 2006-09-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
KR100730151B1 (ko) * 2005-09-30 2007-06-19 삼성에스디아이 주식회사 평판 표시 장치
TWI460851B (zh) 2005-10-17 2014-11-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP4245032B2 (ja) * 2006-10-03 2009-03-25 セイコーエプソン株式会社 発光装置および電子機器
JP2008145840A (ja) * 2006-12-12 2008-06-26 Fujifilm Corp 表示装置
US7402469B1 (en) * 2007-01-12 2008-07-22 Applied Micro Circuits Corporation System and method for selectivity etching an integrated circuit
US8409458B2 (en) * 2007-03-02 2013-04-02 Texas Instruments Incorporated Process for reactive ion etching a layer of diamond like carbon
JP4380718B2 (ja) * 2007-03-15 2009-12-09 ソニー株式会社 半導体装置の製造方法
JP5185598B2 (ja) * 2007-11-06 2013-04-17 株式会社ジャパンディスプレイイースト 有機ｅｌ表示装置およびその製造方法
US7936122B2 (en) * 2007-12-14 2011-05-03 Canon Kabushiki Kaisha Organic EL display apparatus
CN101500351A (zh) * 2008-01-30 2009-08-05 奇美电子股份有限公司 有机电致发光装置及其制造方法
JP5505757B2 (ja) * 2008-03-25 2014-05-28 Ｎｌｔテクノロジー株式会社 液晶表示装置の製造方法および液晶表示装置
KR101308200B1 (ko) * 2008-05-06 2013-09-13 엘지디스플레이 주식회사 플렉서블 유기발광 표시장치 및 그 제조 방법
JP2011003522A (ja) * 2008-10-16 2011-01-06 Semiconductor Energy Lab Co Ltd フレキシブル発光装置、電子機器及びフレキシブル発光装置の作製方法
TWI607670B (zh) 2009-01-08 2017-12-01 半導體能源研究所股份有限公司 發光裝置及電子裝置
KR101851926B1 (ko) 2009-09-04 2018-04-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 발광 장치를 제작하기 위한 방법
KR101872927B1 (ko) * 2010-05-21 2018-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101845480B1 (ko) * 2010-06-25 2018-04-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
JP5735506B2 (ja) * 2010-06-29 2015-06-17 株式会社Joled 有機発光素子の製造方法
JP5644341B2 (ja) * 2010-10-04 2014-12-24 ソニー株式会社 固体撮像素子、および、その製造方法、電子機器
US8476622B2 (en) * 2011-01-05 2013-07-02 Electronics And Telecommunications Research Institute Active matrix organic light emitting diode
KR101889748B1 (ko) * 2011-01-10 2018-08-21 삼성디스플레이 주식회사 유기 발광 표시 장치 및 이의 제조 방법
KR20250154556A (ko) 2012-07-20 2025-10-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치, 및 표시 장치를 포함하는 전자 장치
JP6142151B2 (ja) * 2012-07-31 2017-06-07 株式会社Ｊｏｌｅｄ 表示装置および電子機器
US12302698B2 (en) 2012-07-31 2025-05-13 Jdi Design And Development G.K. Display unit with moisture proof film outside of seal section and electronic apparatus with said display unit
KR102000209B1 (ko) * 2012-11-16 2019-07-16 삼성디스플레이 주식회사 표시장치 및 표시장치의 제조방법
KR20140118011A (ko) * 2013-03-27 2014-10-08 삼성디스플레이 주식회사 표시장치 및 이의 제조 방법
US9269915B2 (en) * 2013-09-18 2016-02-23 Semiconductor Energy Laboratory Co., Ltd. Display device
KR102117109B1 (ko) * 2013-10-22 2020-06-01 삼성디스플레이 주식회사 유기 발광 표시 장치
KR102200294B1 (ko) * 2014-01-22 2021-01-11 삼성디스플레이 주식회사 표시장치 및 그 제조방법
KR20150137214A (ko) * 2014-05-28 2015-12-09 삼성디스플레이 주식회사 유기발광 디스플레이 장치 및 그 제조방법
KR102199216B1 (ko) 2014-06-09 2021-01-07 삼성디스플레이 주식회사 유기발광 디스플레이 장치
KR102223676B1 (ko) 2014-06-24 2021-03-08 삼성디스플레이 주식회사 디스플레이 장치
KR102360783B1 (ko) 2014-09-16 2022-02-10 삼성디스플레이 주식회사 디스플레이 장치
KR102284756B1 (ko) 2014-09-23 2021-08-03 삼성디스플레이 주식회사 디스플레이 장치
KR102303242B1 (ko) 2014-10-17 2021-09-17 삼성디스플레이 주식회사 유기 발광 표시 장치
KR102391920B1 (ko) * 2014-11-03 2022-04-28 엘지디스플레이 주식회사 유기발광 표시패널 및 그 제조 방법
KR102557315B1 (ko) * 2015-05-08 2023-07-19 삼성디스플레이 주식회사 유기 발광 표시 장치
KR102430819B1 (ko) * 2015-08-19 2022-08-10 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법
JP2017152231A (ja) * 2016-02-25 2017-08-31 株式会社ジャパンディスプレイ 表示装置、表示装置の製造方法
KR102664048B1 (ko) * 2016-08-30 2024-05-16 삼성디스플레이 주식회사 유기 발광 표시 장치
KR102671040B1 (ko) * 2016-10-10 2024-06-03 삼성디스플레이 주식회사 디스플레이 장치
KR102457251B1 (ko) * 2017-03-31 2022-10-21 삼성디스플레이 주식회사 유기 발광 표시 장치
CN107316945B (zh) * 2017-06-23 2019-06-07 京东方科技集团股份有限公司 一种oled显示面板和oled显示装置
CN108010941B (zh) * 2017-11-15 2020-08-11 纳晶科技股份有限公司 用于发光元件的封装结构及方法
CN107946318B (zh) * 2017-11-27 2021-01-12 京东方科技集团股份有限公司 一种阵列基板及其制作方法、显示面板
KR102646400B1 (ko) * 2017-12-13 2024-03-08 엘지디스플레이 주식회사 표시장치
CN111903187B (zh) * 2018-03-28 2023-07-04 夏普株式会社 显示装置
CN110323228B (zh) 2018-03-30 2022-04-15 京东方科技集团股份有限公司 基板及其制作方法、电子装置
US12161021B2 (en) * 2018-03-30 2024-12-03 Sharp Kabushiki Kaisha Display device, mask, and method for manufacturing display device
CN108520892B (zh) * 2018-05-09 2021-01-05 京东方科技集团股份有限公司 显示面板及其制造方法、显示装置
KR102617812B1 (ko) 2018-05-10 2023-12-27 삼성디스플레이 주식회사 유기발광 표시 장치
KR102621591B1 (ko) 2018-09-11 2024-01-08 삼성디스플레이 주식회사 디스플레이 장치
KR102796194B1 (ko) 2018-10-24 2025-04-17 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
KR102796783B1 (ko) * 2019-03-07 2025-04-16 삼성디스플레이 주식회사 유기 발광 표시 장치
KR20200108200A (ko) 2019-03-08 2020-09-17 삼성디스플레이 주식회사 표시 셀, 이의 제조 방법 및 이에 의해 제조된 표시 장치
KR102771506B1 (ko) * 2019-04-12 2025-02-21 삼성디스플레이 주식회사 표시 장치
JP2020181190A (ja) * 2019-04-24 2020-11-05 三星ディスプレイ株式會社Ｓａｍｓｕｎｇ Ｄｉｓｐｌａｙ Ｃｏ．，Ｌｔｄ． 表示装置及びその製造方法
CN110518146B (zh) * 2019-08-30 2022-02-25 京东方科技集团股份有限公司 薄膜封装结构及显示面板
JP2024083002A (ja) * 2022-12-09 2024-06-20 株式会社ジャパンディスプレイ 表示装置及び表示装置用マザー基板

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0545677A (ja) * 1991-08-20 1993-02-26 Hitachi Ltd 配線基板の製造方法並びに配線基板及び液晶表示装置
JP2000105391A (ja) * 1998-07-30 2000-04-11 Matsushita Electric Ind Co Ltd 液晶表示装置、及び、これを用いた受像装置と情報処理装置
JP2001250777A (ja) * 1999-12-28 2001-09-14 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2002318546A (ja) * 2001-02-19 2002-10-31 Semiconductor Energy Lab Co Ltd 発光装置およびその作製方法

Family Cites Families (101)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20751A (en) * 1858-06-29 Territory
JPS6045219A (ja) 1983-08-23 1985-03-11 Toshiba Corp アクテイブマトリクス型表示装置
US4678282A (en) 1985-02-19 1987-07-07 Ovonic Imaging Systems, Inc. Active display matrix addressable without crossed lines on any one substrate and method of using the same
US4653864A (en) * 1986-02-26 1987-03-31 Ovonic Imaging Systems, Inc. Liquid crystal matrix display having improved spacers and method of making same
JPH0545677Y2 (enExample) 1987-05-13 1993-11-24
JPS6472557A (en) 1987-09-11 1989-03-17 Seiko Instr & Electronics Image sensor
JP3361029B2 (ja) * 1997-03-19 2003-01-07 株式会社東芝 表示装置
US6465268B2 (en) 1997-05-22 2002-10-15 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing an electro-optical device
US6175345B1 (en) 1997-06-02 2001-01-16 Canon Kabushiki Kaisha Electroluminescence device, electroluminescence apparatus, and production methods thereof
JP3580092B2 (ja) 1997-08-21 2004-10-20 セイコーエプソン株式会社 アクティブマトリクス型表示装置
US6592933B2 (en) * 1997-10-15 2003-07-15 Toray Industries, Inc. Process for manufacturing organic electroluminescent device
EP1793650B1 (en) 1998-03-17 2014-03-05 Seiko Epson Corporation Method for manufacturing a flat panel display
JPH11339958A (ja) 1998-05-22 1999-12-10 Casio Comput Co Ltd 電界発光素子の製造方法
KR100697413B1 (ko) 1998-07-30 2007-03-19 마츠시타 덴끼 산교 가부시키가이샤 액정 표시 장치, 영상 디스플레이 장치, 정보 처리 장치, 및 그 제조 방법
JP4269195B2 (ja) * 1998-09-25 2009-05-27 ソニー株式会社 発光又は調光素子、及びその製造方法
JP4364957B2 (ja) 1998-10-22 2009-11-18 北陸電気工業株式会社 蒸着マスク
US6680487B1 (en) * 1999-05-14 2004-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor comprising a TFT provided on a substrate having an insulating surface and method of fabricating the same
US6469439B2 (en) * 1999-06-15 2002-10-22 Toray Industries, Inc. Process for producing an organic electroluminescent device
TW459275B (en) 1999-07-06 2001-10-11 Semiconductor Energy Lab Semiconductor device and method of fabricating the same
US6952020B1 (en) * 1999-07-06 2005-10-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
EP1096568A3 (en) * 1999-10-28 2007-10-24 Sony Corporation Display apparatus and method for fabricating the same
KR100720066B1 (ko) 1999-11-09 2007-05-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광장치 제작방법
TW473800B (en) 1999-12-28 2002-01-21 Semiconductor Energy Lab Method of manufacturing a semiconductor device
US6559594B2 (en) * 2000-02-03 2003-05-06 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
TW525305B (en) * 2000-02-22 2003-03-21 Semiconductor Energy Lab Self-light-emitting device and method of manufacturing the same
JP4831873B2 (ja) * 2000-02-22 2011-12-07 株式会社半導体エネルギー研究所 自発光装置及びその作製方法
US6882102B2 (en) 2000-02-29 2005-04-19 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
JP2001307874A (ja) 2000-04-19 2001-11-02 Nippon Seiki Co Ltd 電界発光素子
JP2002062845A (ja) * 2000-06-06 2002-02-28 Semiconductor Energy Lab Co Ltd 表示装置
JP2002031854A (ja) 2000-07-18 2002-01-31 Matsushita Electric Ind Co Ltd 背面投射型スクリーンおよび背面投射型画像表示装置
US20020034930A1 (en) 2000-09-11 2002-03-21 Shunpei Yamazaki Electronic device and method of usage thereof
JP4718731B2 (ja) * 2000-09-11 2011-07-06 株式会社半導体エネルギー研究所 電子装置
TW522752B (en) 2000-10-20 2003-03-01 Toshiba Corp Self-luminous display panel and method of manufacturing the same
JP3695308B2 (ja) 2000-10-27 2005-09-14 日本電気株式会社 アクティブマトリクス有機ｅｌ表示装置及びその製造方法
JP2002151252A (ja) 2000-11-16 2002-05-24 Stanley Electric Co Ltd 有機ｅｌ表示装置
JP3440419B2 (ja) 2001-02-02 2003-08-25 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いた研磨方法
US6720198B2 (en) 2001-02-19 2004-04-13 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
US6992439B2 (en) 2001-02-22 2006-01-31 Semiconductor Energy Laboratory Co., Ltd. Display device with sealing structure for protecting organic light emitting element
JP2002289347A (ja) * 2001-03-27 2002-10-04 Sanyo Electric Co Ltd エレクトロルミネッセンス表示装置、その製造方法、被着マスク及びその製造方法
KR100495702B1 (ko) * 2001-04-13 2005-06-14 삼성에스디아이 주식회사 유기 전계 발광 표시 장치 및 그 제조 방법
JP4801278B2 (ja) * 2001-04-23 2011-10-26 株式会社半導体エネルギー研究所 発光装置及びその作製方法
JP2003086356A (ja) * 2001-09-06 2003-03-20 Semiconductor Energy Lab Co Ltd 発光装置及び電子機器
US7211828B2 (en) 2001-06-20 2007-05-01 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic apparatus
JP4472238B2 (ja) 2001-08-10 2010-06-02 株式会社半導体エネルギー研究所 剥離方法および半導体装置の作製方法
TW554398B (en) 2001-08-10 2003-09-21 Semiconductor Energy Lab Method of peeling off and method of manufacturing semiconductor device
JP2003059671A (ja) 2001-08-20 2003-02-28 Sony Corp 表示素子及びその製造方法
TW558743B (en) * 2001-08-22 2003-10-21 Semiconductor Energy Lab Peeling method and method of manufacturing semiconductor device
KR100413455B1 (ko) * 2001-09-10 2003-12-31 엘지전자 주식회사 정전기 제거용 유기 ｅｌ 소자
JP2003100449A (ja) 2001-09-26 2003-04-04 Canon Inc 有機エレクトロルミネッセンスパネル
JP2003123969A (ja) 2001-10-17 2003-04-25 Matsushita Electric Ind Co Ltd 蒸着用マスクおよび有機エレクトロルミネッセンスディスプレイの製造方法
US6852997B2 (en) * 2001-10-30 2005-02-08 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
JP4515022B2 (ja) * 2001-11-16 2010-07-28 株式会社半導体エネルギー研究所 発光装置
US6822264B2 (en) 2001-11-16 2004-11-23 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
JP2003187967A (ja) * 2001-12-20 2003-07-04 Ulvac Japan Ltd 有機ｅｌ表示装置
US6815723B2 (en) 2001-12-28 2004-11-09 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, method of manufacturing the same, and manufacturing apparatus therefor
US7038377B2 (en) 2002-01-16 2006-05-02 Seiko Epson Corporation Display device with a narrow frame
SG143063A1 (en) * 2002-01-24 2008-06-27 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
JP4627966B2 (ja) * 2002-01-24 2011-02-09 株式会社半導体エネルギー研究所 発光装置およびその作製方法
JP2004145244A (ja) * 2002-01-25 2004-05-20 Semiconductor Energy Lab Co Ltd 表示装置
TWI258317B (en) 2002-01-25 2006-07-11 Semiconductor Energy Lab A display device and method for manufacturing thereof
JP4094863B2 (ja) 2002-02-12 2008-06-04 三星エスディアイ株式会社 有機ｅｌ表示装置
JP2003243171A (ja) 2002-02-18 2003-08-29 Matsushita Electric Ind Co Ltd 有機エレクトロルミネッセンスディスプレイパネルおよびその製造方法
JP2003257622A (ja) * 2002-02-28 2003-09-12 Fuji Electric Co Ltd 有機ｅｌディスプレイとその製造方法
JP3481232B2 (ja) 2002-03-05 2003-12-22 三洋電機株式会社 有機エレクトロルミネッセンスパネルの製造方法
JP4651916B2 (ja) * 2002-03-07 2011-03-16 株式会社半導体エネルギー研究所 発光装置の作製方法
JP2003272827A (ja) * 2002-03-13 2003-09-26 Matsushita Electric Ind Co Ltd 有機発光素子及びその製造方法
JP2003271075A (ja) * 2002-03-13 2003-09-25 Toshiba Corp 表示装置
JP2003272834A (ja) * 2002-03-20 2003-09-26 Denso Corp 表示装置
JP4545385B2 (ja) * 2002-03-26 2010-09-15 株式会社半導体エネルギー研究所 発光装置の作製方法
US7045861B2 (en) 2002-03-26 2006-05-16 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, liquid-crystal display device and method for manufacturing same
JP4339000B2 (ja) * 2002-03-26 2009-10-07 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP3989761B2 (ja) * 2002-04-09 2007-10-10 株式会社半導体エネルギー研究所 半導体表示装置
JP3989763B2 (ja) 2002-04-15 2007-10-10 株式会社半導体エネルギー研究所 半導体表示装置
JP4156431B2 (ja) * 2002-04-23 2008-09-24 株式会社半導体エネルギー研究所 発光装置およびその作製方法
TW591564B (en) * 2002-04-24 2004-06-11 Sanyo Electric Co Display device
DE10392604B4 (de) * 2002-05-23 2023-03-09 Global Oled Technology Llc Organische EL-Anzeige
JP2003347044A (ja) 2002-05-30 2003-12-05 Sanyo Electric Co Ltd 有機ｅｌパネル
JP4401688B2 (ja) * 2002-06-07 2010-01-20 株式会社半導体エネルギー研究所 発光装置およびその作製方法、並びに電子機器
US7230271B2 (en) * 2002-06-11 2007-06-12 Semiconductor Energy Laboratory Co., Ltd. Light emitting device comprising film having hygroscopic property and transparency and manufacturing method thereof
US7042149B2 (en) 2002-06-13 2006-05-09 Tfpd Corporation Circuit array substrate for display device
JP2004030974A (ja) * 2002-06-21 2004-01-29 Samsung Nec Mobile Display Co Ltd 電子発光素子及びその製造方法
JP3501155B1 (ja) 2002-07-03 2004-03-02 富士電機ホールディングス株式会社 有機ｅｌディスプレイおよびその製造方法
JP4651922B2 (ja) 2002-08-09 2011-03-16 株式会社半導体エネルギー研究所 Ｅｌ表示装置
US7081704B2 (en) 2002-08-09 2006-07-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2004083650A (ja) 2002-08-23 2004-03-18 Konica Minolta Holdings Inc 有機半導体材料及びそれを用いる薄膜トランジスタ素子
JP2004103337A (ja) * 2002-09-06 2004-04-02 Semiconductor Energy Lab Co Ltd 発光装置およびその作製方法
JP2004105391A (ja) 2002-09-17 2004-04-08 Asahi Kasei Chemicals Corp 滑走具
US7094684B2 (en) 2002-09-20 2006-08-22 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP4663224B2 (ja) 2002-09-20 2011-04-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3649238B2 (ja) 2002-10-17 2005-05-18 旭硝子株式会社 積層体、配線付き基体、有機ｅｌ表示素子、有機ｅｌ表示素子の接続端子及びそれらの製造方法
US7169461B2 (en) 2002-10-17 2007-01-30 Asahi Glass Company, Limited Laminate, a substrate with wires, an organic EL display element, a connection terminal for the organic EL display element and a method for producing each
JP2004165068A (ja) 2002-11-14 2004-06-10 Sanyo Electric Co Ltd 有機電界発光パネルの製造方法
CN100370491C (zh) * 2002-12-10 2008-02-20 株式会社半导体能源研究所 发光装置及其制作方法
JP4817627B2 (ja) * 2003-08-29 2011-11-16 株式会社半導体エネルギー研究所 表示装置の作製方法
KR101172466B1 (ko) 2003-08-29 2012-08-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 그 제작방법
US7792489B2 (en) * 2003-12-26 2010-09-07 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, electronic appliance, and method for manufacturing light emitting device
JP2004355014A (ja) * 2004-07-26 2004-12-16 Hitachi Ltd 表示装置
US8217396B2 (en) 2004-07-30 2012-07-10 Semiconductor Energy Laboratory Co., Ltd. Display device comprising electrode layer contacting wiring in the connection region and extending to pixel region
US8350466B2 (en) 2004-09-17 2013-01-08 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
US7753751B2 (en) * 2004-09-29 2010-07-13 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating the display device
US8772783B2 (en) 2004-10-14 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Display device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0545677A (ja) * 1991-08-20 1993-02-26 Hitachi Ltd 配線基板の製造方法並びに配線基板及び液晶表示装置
JP2000105391A (ja) * 1998-07-30 2000-04-11 Matsushita Electric Ind Co Ltd 液晶表示装置、及び、これを用いた受像装置と情報処理装置
JP2001250777A (ja) * 1999-12-28 2001-09-14 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2002318546A (ja) * 2001-02-19 2002-10-31 Semiconductor Energy Lab Co Ltd 発光装置およびその作製方法

Also Published As

Publication number Publication date
JP6280963B2 (ja) 2018-02-14
JP2017228543A (ja) 2017-12-28
US20170069872A1 (en) 2017-03-09
US8350466B2 (en) 2013-01-08
JP5918834B2 (ja) 2016-05-18
CN100551179C (zh) 2009-10-14
JP6715974B2 (ja) 2020-07-01
US10096795B2 (en) 2018-10-09
JP2013083993A (ja) 2013-05-09
JP5347059B2 (ja) 2013-11-20
JP2015065175A (ja) 2015-04-09
KR20130007513A (ko) 2013-01-18
US9444069B2 (en) 2016-09-13
JP2013061663A (ja) 2013-04-04
US20130134401A1 (en) 2013-05-30
JP2024103535A (ja) 2024-08-01
JP2014067043A (ja) 2014-04-17
CN101673758A (zh) 2010-03-17
JP5728559B2 (ja) 2015-06-03
JP2012084530A (ja) 2012-04-26
KR101266023B1 (ko) 2013-05-21
US20060202615A1 (en) 2006-09-14
JP2023029959A (ja) 2023-03-07
CN101673758B (zh) 2013-01-02
JP2021131560A (ja) 2021-09-09
JP6612824B2 (ja) 2019-11-27
JP7698107B2 (ja) 2025-06-24
JP2019125580A (ja) 2019-07-25
JP2022111141A (ja) 2022-07-29
JP6085018B2 (ja) 2017-02-22
JP5244958B2 (ja) 2013-07-24
CN1750719A (zh) 2006-03-22
JP2024103553A (ja) 2024-08-01
JP2016040777A (ja) 2016-03-24
KR20060051388A (ko) 2006-05-19
JP2020115472A (ja) 2020-07-30
JP2017004970A (ja) 2017-01-05

Similar Documents

Publication Publication Date Title
JP7698107B2 (ja) 発光表示装置
KR101362691B1 (ko) 액티브 매트릭스형 표시장치
KR101228859B1 (ko) 디스플레이 디바이스 및 이의 제조 방법
JP4879541B2 (ja) 表示装置の作製方法
JP2006113568A (ja) 表示装置、及び表示装置の作製方法
JP5072202B2 (ja) 表示装置の作製方法

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

A201 Request for examination
AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

A107 Divisional application of patent
J201 Request for trial against refusal decision
PA0107 Divisional application

St.27 status event code: A-0-1-A10-A18-div-PA0107

St.27 status event code: A-0-1-A10-A16-div-PA0107

PJ0201 Trial against decision of rejection

St.27 status event code: A-3-3-V10-V11-apl-PJ0201

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PB0901 Examination by re-examination before a trial

St.27 status event code: A-6-3-E10-E12-rex-PB0901

B701 Decision to grant
PB0701 Decision of registration after re-examination before a trial

St.27 status event code: A-3-4-F10-F13-rex-PB0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20160310

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20170317

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20250416

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

H13 Ip right lapsed

Free format text: ST27 STATUS EVENT CODE: N-4-6-H10-H13-OTH-PC1903 (AS PROVIDED BY THE NATIONAL OFFICE); TERMINATION CATEGORY : DEFAULT_OF_REGISTRATION_FEE

Effective date: 20250416

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20250416