KR101213928B1 - 실리콘의 결정화용 도가니 - Google Patents

실리콘의 결정화용 도가니 Download PDF

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Publication number
KR101213928B1
KR101213928B1 KR1020067022285A KR20067022285A KR101213928B1 KR 101213928 B1 KR101213928 B1 KR 101213928B1 KR 1020067022285 A KR1020067022285 A KR 1020067022285A KR 20067022285 A KR20067022285 A KR 20067022285A KR 101213928 B1 KR101213928 B1 KR 101213928B1
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KR
South Korea
Prior art keywords
crucible
silicon
crystallization
intermediate layer
weight
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Expired - Fee Related
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KR1020067022285A
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English (en)
Korean (ko)
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KR20070004901A (ko
Inventor
질베르 랑꿀
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비수비우스 크루서블 컴패니
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Publication of KR20070004901A publication Critical patent/KR20070004901A/ko
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Crucibles And Fluidized-Bed Furnaces (AREA)
  • Silicon Compounds (AREA)
  • Glass Melting And Manufacturing (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
  • Mold Materials And Core Materials (AREA)
KR1020067022285A 2004-04-29 2006-10-26 실리콘의 결정화용 도가니 Expired - Fee Related KR101213928B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP04447105 2004-04-29
EP04447105.0 2004-04-29
PCT/BE2005/000055 WO2005106084A1 (en) 2004-04-29 2005-04-26 Crucible for the crystallization of silicon

Publications (2)

Publication Number Publication Date
KR20070004901A KR20070004901A (ko) 2007-01-09
KR101213928B1 true KR101213928B1 (ko) 2012-12-18

Family

ID=34933027

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020067022285A Expired - Fee Related KR101213928B1 (ko) 2004-04-29 2006-10-26 실리콘의 결정화용 도가니

Country Status (15)

Country Link
US (1) US7378128B2 (enExample)
EP (1) EP1745164B1 (enExample)
JP (1) JP5059602B2 (enExample)
KR (1) KR101213928B1 (enExample)
CN (1) CN1946881B (enExample)
AT (1) ATE398196T1 (enExample)
DE (1) DE602005007484D1 (enExample)
ES (1) ES2306141T3 (enExample)
MX (1) MXPA06012509A (enExample)
NO (1) NO339723B1 (enExample)
PL (1) PL1745164T3 (enExample)
RU (1) RU2355832C2 (enExample)
TW (1) TWI361174B (enExample)
UA (1) UA87842C2 (enExample)
WO (1) WO2005106084A1 (enExample)

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TWI400369B (zh) 2005-10-06 2013-07-01 Vesuvius Crucible Co 用於矽結晶的坩堝及其製造方法
DE102005050593A1 (de) * 2005-10-21 2007-04-26 Esk Ceramics Gmbh & Co. Kg Dauerhafte siliciumnitridhaltige Hartbeschichtung
EP1811064A1 (fr) * 2006-01-12 2007-07-25 Vesuvius Crucible Company Creuset pour le traitement de silicium à l'état fondu
WO2008026688A1 (en) * 2006-08-30 2008-03-06 Kyocera Corporation Method of forming mold for silicon ingot production, process for producing substrate for solar cell element, process for producing solar cell element, and mold for silicon ingot production
EP2116637A3 (en) * 2008-05-07 2012-03-21 Covalent Materials Corporation Crucible for melting silicon and release agent used to the same
DE102008031766A1 (de) 2008-07-04 2009-10-15 Schott Ag Verfahren zur Herstellung eines beschichteten Tiegels aus einem Tiegelgrünkörper oder aus einem zwischengebrannten Tiegelkörper sowie die Verwendung solch eines beschichteten Tiegels
CN101775639B (zh) * 2009-01-08 2012-05-30 常熟华融太阳能新型材料有限公司 用于多晶硅结晶炉炉壁保护的内衬及其制造方法
DE102009048741A1 (de) 2009-03-20 2010-09-30 Access E.V. Tiegel zum Schmelzen und Kristallisieren eines Metalls, eines Halbleiters oder einer Metalllegierung, Bauteil für einen Tiegelgrundkörper eines Tiegels und Verfahren zum Herstellen eines Bauteils
WO2011009062A2 (en) * 2009-07-16 2011-01-20 Memc Singapore Pte, Ltd. Coated crucibles and methods for preparing and use thereof
KR101048586B1 (ko) * 2009-10-06 2011-07-12 주식회사 엘지실트론 고강도 석영 도가니 및 그 제조방법
US20110210470A1 (en) * 2010-02-26 2011-09-01 6N Silicon Inc. Crucible and method for furnace capacity utilization
CN101913776B (zh) * 2010-09-03 2012-07-04 山东理工大学 氮化硅涂层石英坩埚的制备方法
CN102031488A (zh) * 2010-12-23 2011-04-27 福建福晶科技股份有限公司 一种提高膜层损伤阈值的坩埚
CN102229502B (zh) * 2011-06-10 2013-06-05 东海晶澳太阳能科技有限公司 一种晶体硅铸造用的坩埚涂层及其制备方法
MY165455A (en) * 2011-08-31 2018-03-22 3M Innovative Properties Co Silicon-nitride-containing separating layer having high hardness
CN102367572B (zh) * 2011-09-21 2014-01-01 安阳市凤凰光伏科技有限公司 多晶硅铸锭坩埚喷涂免烧结方法
JP5148783B1 (ja) * 2011-11-14 2013-02-20 シャープ株式会社 複合材の製造方法およびシリコンの精製装置
WO2013073204A1 (ja) * 2011-11-14 2013-05-23 シャープ株式会社 複合材、複合材の製造方法およびシリコンの精製装置
CN103506263B (zh) * 2011-12-30 2015-07-29 英利能源（中国）有限公司 多晶硅坩埚喷涂免烘干的方法及氮化硅涂层
CN103183478B (zh) * 2011-12-31 2015-07-08 浙江昱辉阳光能源有限公司 氮化硅坩埚涂层及其制备方法
JP2013227171A (ja) * 2012-04-26 2013-11-07 Kyodo Fine Ceramics Co Ltd 単結晶シリコン育成用るつぼ、単結晶シリコン育成用るつぼの製造方法、及び単結晶シリコンの製造方法
KR101697027B1 (ko) * 2012-06-25 2017-01-16 실리코르 머티리얼즈 인코포레이티드 실리콘 용융물의 정제용 내화 도가니의 표면용 라이닝 및 용융 및 추가적인 방향성 고체화를 위하여 상기 도가니(들)를 이용하는 실리콘 용융물의 정제 방법
CN103774209B (zh) * 2012-10-26 2016-06-15 阿特斯(中国)投资有限公司 硅铸锭用坩埚及其涂层制备方法
JP6096653B2 (ja) * 2012-12-28 2017-03-15 京セラ株式会社 シリコン鋳造用鋳型およびその製造方法
RU2514354C1 (ru) * 2013-02-27 2014-04-27 Общество с ограниченной ответственностью "Обнинский Внедренческий Центр "Перспективные технологии" Способ получения изделий из пористых керамических и волокнистых материалов на основе кварцевого стекла
JP6355096B2 (ja) * 2013-07-31 2018-07-11 国立大学法人山口大学 撥液性複合部材
CN103420618A (zh) * 2013-09-05 2013-12-04 蠡县英利新能源有限公司 太阳能电池坩埚及其喷涂方法
FR3010716B1 (fr) 2013-09-16 2015-10-09 Commissariat Energie Atomique Substrat pour la solidification de lingot de silicium
FR3010715B1 (fr) * 2013-09-16 2017-03-10 Commissariat Energie Atomique Substrat a revetement peu permeable pour solidification de silicium
EP2982780B1 (de) 2014-08-04 2019-12-11 Heraeus Quarzglas GmbH & Co. KG Verfahren zur herstellung eines siliziumblocks, zur verfahrensdurchführung geeignete kokille aus quarzglas oder quarzgut sowie verfahren für deren herstellung
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
CN105133011A (zh) * 2015-09-01 2015-12-09 晶科能源有限公司 一种多晶石英坩埚涂层及其制备方法
JP6567987B2 (ja) * 2016-02-24 2019-08-28 クアーズテック株式会社 石英ガラスルツボの製造方法
GB2550415A (en) * 2016-05-18 2017-11-22 Rec Solar Pte Ltd Silicon ingot growth crucible with patterned protrusion structured layer
US10450669B2 (en) 2016-07-29 2019-10-22 Auo Crystal Corporation Container for silicon ingot fabrication and manufacturing method thereof, and method for manufacturing crystalline silicon ingot
KR102617972B1 (ko) 2017-11-21 2023-12-22 램 리써치 코포레이션 하단 링 및 중간 에지 링
US11127572B2 (en) 2018-08-07 2021-09-21 Silfex, Inc. L-shaped plasma confinement ring for plasma chambers
US11798789B2 (en) 2018-08-13 2023-10-24 Lam Research Corporation Replaceable and/or collapsible edge ring assemblies for plasma sheath tuning incorporating edge ring positioning and centering features
CN110000708A (zh) * 2019-04-15 2019-07-12 徐州协鑫太阳能材料有限公司 一种改造坩埚粗糙度的方法
CN109955154A (zh) * 2019-04-15 2019-07-02 徐州协鑫太阳能材料有限公司 一种坩埚表面粗糙度的加工方法
DE102019206489A1 (de) * 2019-05-06 2020-11-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Tiegel zur Herstellung von partikel- und stickstoff-freien Silicium-Ingots mittels gerichteter Erstarrung, Silicium-Ingot und die Verwendung des Tiegels
WO2021194470A1 (en) 2020-03-23 2021-09-30 Lam Research Corporation Mid-ring erosion compensation in substrate processing systems
KR102677112B1 (ko) * 2022-05-09 2024-06-20 (주)셀릭 저저항 대구경 잉곳 제조장치

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JPS54141389A (en) 1978-04-27 1979-11-02 Nippon Telegr & Teleph Corp <Ntt> Crucible used in crystal growing device, manufacture of said crucible and crystal growing method using said crucible
JPS54157779A (en) 1978-06-02 1979-12-12 Toshiba Corp Production of silicon single crystal

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JPS54141389A (en) 1978-04-27 1979-11-02 Nippon Telegr & Teleph Corp <Ntt> Crucible used in crystal growing device, manufacture of said crucible and crystal growing method using said crucible
JPS54157779A (en) 1978-06-02 1979-12-12 Toshiba Corp Production of silicon single crystal

Also Published As

Publication number Publication date
TWI361174B (en) 2012-04-01
EP1745164B1 (en) 2008-06-11
US20070240635A1 (en) 2007-10-18
TW200540130A (en) 2005-12-16
NO339723B1 (no) 2017-01-23
JP2007534590A (ja) 2007-11-29
CN1946881B (zh) 2010-06-09
RU2006140280A (ru) 2008-05-27
MXPA06012509A (es) 2007-01-31
CN1946881A (zh) 2007-04-11
ATE398196T1 (de) 2008-07-15
DE602005007484D1 (de) 2008-07-24
RU2355832C2 (ru) 2009-05-20
NO20065496L (no) 2006-11-28
US7378128B2 (en) 2008-05-27
WO2005106084A1 (en) 2005-11-10
KR20070004901A (ko) 2007-01-09
PL1745164T3 (pl) 2008-11-28
ES2306141T3 (es) 2008-11-01
UA87842C2 (uk) 2009-08-25
EP1745164A1 (en) 2007-01-24
JP5059602B2 (ja) 2012-10-24

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