ATE398196T1 - Tiegel für die kristallisation von silicium - Google Patents

Tiegel für die kristallisation von silicium

Info

Publication number
ATE398196T1
ATE398196T1 AT05740520T AT05740520T ATE398196T1 AT E398196 T1 ATE398196 T1 AT E398196T1 AT 05740520 T AT05740520 T AT 05740520T AT 05740520 T AT05740520 T AT 05740520T AT E398196 T1 ATE398196 T1 AT E398196T1
Authority
AT
Austria
Prior art keywords
silicon
crucible
crystallization
preparation
side walls
Prior art date
Application number
AT05740520T
Other languages
German (de)
English (en)
Inventor
Gilbert Rancoule
Original Assignee
Vesuvius Crucible Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vesuvius Crucible Co filed Critical Vesuvius Crucible Co
Application granted granted Critical
Publication of ATE398196T1 publication Critical patent/ATE398196T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Crucibles And Fluidized-Bed Furnaces (AREA)
  • Silicon Compounds (AREA)
  • Glass Melting And Manufacturing (AREA)
  • Mold Materials And Core Materials (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
AT05740520T 2004-04-29 2005-04-26 Tiegel für die kristallisation von silicium ATE398196T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP04447105 2004-04-29

Publications (1)

Publication Number Publication Date
ATE398196T1 true ATE398196T1 (de) 2008-07-15

Family

ID=34933027

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05740520T ATE398196T1 (de) 2004-04-29 2005-04-26 Tiegel für die kristallisation von silicium

Country Status (15)

Country Link
US (1) US7378128B2 (enExample)
EP (1) EP1745164B1 (enExample)
JP (1) JP5059602B2 (enExample)
KR (1) KR101213928B1 (enExample)
CN (1) CN1946881B (enExample)
AT (1) ATE398196T1 (enExample)
DE (1) DE602005007484D1 (enExample)
ES (1) ES2306141T3 (enExample)
MX (1) MXPA06012509A (enExample)
NO (1) NO339723B1 (enExample)
PL (1) PL1745164T3 (enExample)
RU (1) RU2355832C2 (enExample)
TW (1) TWI361174B (enExample)
UA (1) UA87842C2 (enExample)
WO (1) WO2005106084A1 (enExample)

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CN102229502B (zh) * 2011-06-10 2013-06-05 东海晶澳太阳能科技有限公司 一种晶体硅铸造用的坩埚涂层及其制备方法
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JP5148783B1 (ja) * 2011-11-14 2013-02-20 シャープ株式会社 複合材の製造方法およびシリコンの精製装置
CN103506263B (zh) * 2011-12-30 2015-07-29 英利能源（中国）有限公司 多晶硅坩埚喷涂免烘干的方法及氮化硅涂层
CN103183478B (zh) * 2011-12-31 2015-07-08 浙江昱辉阳光能源有限公司 氮化硅坩埚涂层及其制备方法
JP2013227171A (ja) * 2012-04-26 2013-11-07 Kyodo Fine Ceramics Co Ltd 単結晶シリコン育成用るつぼ、単結晶シリコン育成用るつぼの製造方法、及び単結晶シリコンの製造方法
JP5933834B2 (ja) * 2012-06-25 2016-06-15 シリコー マテリアルズ インコーポレイテッド シリコン溶融物の精製のための耐火性るつぼの表面のためのライニングならびに溶融のための当該るつぼを使用したシリコン溶融物の精製およびさらなる方向性凝固の方法
CN103774209B (zh) * 2012-10-26 2016-06-15 阿特斯(中国)投资有限公司 硅铸锭用坩埚及其涂层制备方法
JP6096653B2 (ja) * 2012-12-28 2017-03-15 京セラ株式会社 シリコン鋳造用鋳型およびその製造方法
RU2514354C1 (ru) * 2013-02-27 2014-04-27 Общество с ограниченной ответственностью "Обнинский Внедренческий Центр "Перспективные технологии" Способ получения изделий из пористых керамических и волокнистых материалов на основе кварцевого стекла
JP6355096B2 (ja) * 2013-07-31 2018-07-11 国立大学法人山口大学 撥液性複合部材
CN103420618A (zh) * 2013-09-05 2013-12-04 蠡县英利新能源有限公司 太阳能电池坩埚及其喷涂方法
FR3010715B1 (fr) * 2013-09-16 2017-03-10 Commissariat Energie Atomique Substrat a revetement peu permeable pour solidification de silicium
FR3010716B1 (fr) * 2013-09-16 2015-10-09 Commissariat Energie Atomique Substrat pour la solidification de lingot de silicium
EP2982780B1 (de) 2014-08-04 2019-12-11 Heraeus Quarzglas GmbH & Co. KG Verfahren zur herstellung eines siliziumblocks, zur verfahrensdurchführung geeignete kokille aus quarzglas oder quarzgut sowie verfahren für deren herstellung
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
CN105133011A (zh) * 2015-09-01 2015-12-09 晶科能源有限公司 一种多晶石英坩埚涂层及其制备方法
JP6567987B2 (ja) * 2016-02-24 2019-08-28 クアーズテック株式会社 石英ガラスルツボの製造方法
GB2550415A (en) * 2016-05-18 2017-11-22 Rec Solar Pte Ltd Silicon ingot growth crucible with patterned protrusion structured layer
US10450669B2 (en) 2016-07-29 2019-10-22 Auo Crystal Corporation Container for silicon ingot fabrication and manufacturing method thereof, and method for manufacturing crystalline silicon ingot
JP6878616B2 (ja) 2017-11-21 2021-05-26 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ ボトムおよびミドルエッジリング
US11127572B2 (en) 2018-08-07 2021-09-21 Silfex, Inc. L-shaped plasma confinement ring for plasma chambers
KR20210111872A (ko) 2018-08-13 2021-09-13 램 리써치 코포레이션 에지 링 포지셔닝 및 센터링 피처들을 포함하는 플라즈마 시스 튜닝을 위한 교체가능한 에지 링 어셈블리 및/또는 접을 수 있는 에지 링 어셈블리
CN110000708A (zh) * 2019-04-15 2019-07-12 徐州协鑫太阳能材料有限公司 一种改造坩埚粗糙度的方法
CN109955154A (zh) * 2019-04-15 2019-07-02 徐州协鑫太阳能材料有限公司 一种坩埚表面粗糙度的加工方法
DE102019206489A1 (de) * 2019-05-06 2020-11-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Tiegel zur Herstellung von partikel- und stickstoff-freien Silicium-Ingots mittels gerichteter Erstarrung, Silicium-Ingot und die Verwendung des Tiegels
WO2021194470A1 (en) 2020-03-23 2021-09-30 Lam Research Corporation Mid-ring erosion compensation in substrate processing systems
KR102677112B1 (ko) * 2022-05-09 2024-06-20 (주)셀릭 저저항 대구경 잉곳 제조장치

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Also Published As

Publication number Publication date
US20070240635A1 (en) 2007-10-18
NO339723B1 (no) 2017-01-23
ES2306141T3 (es) 2008-11-01
RU2355832C2 (ru) 2009-05-20
US7378128B2 (en) 2008-05-27
KR20070004901A (ko) 2007-01-09
PL1745164T3 (pl) 2008-11-28
MXPA06012509A (es) 2007-01-31
TW200540130A (en) 2005-12-16
RU2006140280A (ru) 2008-05-27
CN1946881A (zh) 2007-04-11
KR101213928B1 (ko) 2012-12-18
JP5059602B2 (ja) 2012-10-24
DE602005007484D1 (de) 2008-07-24
CN1946881B (zh) 2010-06-09
TWI361174B (en) 2012-04-01
WO2005106084A1 (en) 2005-11-10
EP1745164B1 (en) 2008-06-11
EP1745164A1 (en) 2007-01-24
UA87842C2 (uk) 2009-08-25
NO20065496L (no) 2006-11-28
JP2007534590A (ja) 2007-11-29

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