ATE468426T1 - Tiegel für die kristallisation von silicium und verfahren zu ihrer herstellung - Google Patents
Tiegel für die kristallisation von silicium und verfahren zu ihrer herstellungInfo
- Publication number
- ATE468426T1 ATE468426T1 AT06776097T AT06776097T ATE468426T1 AT E468426 T1 ATE468426 T1 AT E468426T1 AT 06776097 T AT06776097 T AT 06776097T AT 06776097 T AT06776097 T AT 06776097T AT E468426 T1 ATE468426 T1 AT E468426T1
- Authority
- AT
- Austria
- Prior art keywords
- silicon
- crucible
- production
- crystallization
- side walls
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/001—General methods for coating; Devices therefor
- C03C17/003—General methods for coating; Devices therefor for hollow ware, e.g. containers
- C03C17/004—Coating the inside
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
- C03C17/3429—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating
- C03C17/3435—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating comprising a nitride, oxynitride, boronitride or carbonitride
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
- C03C17/3429—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating
- C03C17/3482—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating comprising silicon, hydrogenated silicon or a silicide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/89—Coating or impregnation for obtaining at least two superposed coatings having different compositions
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/11—Deposition methods from solutions or suspensions
- C03C2218/112—Deposition methods from solutions or suspensions by spraying
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/11—Deposition methods from solutions or suspensions
- C03C2218/114—Deposition methods from solutions or suspensions by brushing, pouring or doctorblading
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Structural Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
- Crucibles And Fluidized-Bed Furnaces (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP05076520A EP1739209A1 (de) | 2005-07-01 | 2005-07-01 | Tiegel zur Kristallisierung von Silicium |
PCT/EP2006/006347 WO2007003354A1 (en) | 2005-07-01 | 2006-06-30 | Crucible for the crystallization of silicon |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE468426T1 true ATE468426T1 (de) | 2010-06-15 |
Family
ID=35355545
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT06776097T ATE468426T1 (de) | 2005-07-01 | 2006-06-30 | Tiegel für die kristallisation von silicium und verfahren zu ihrer herstellung |
Country Status (22)
Country | Link |
---|---|
US (1) | US8152920B2 (de) |
EP (2) | EP1739209A1 (de) |
JP (1) | JP2008544937A (de) |
KR (1) | KR20080025140A (de) |
CN (1) | CN101213328B (de) |
AT (1) | ATE468426T1 (de) |
AU (1) | AU2006265391B2 (de) |
BR (1) | BRPI0612805A2 (de) |
CA (1) | CA2611858C (de) |
DE (1) | DE602006014406D1 (de) |
DK (1) | DK1899508T3 (de) |
ES (1) | ES2343203T3 (de) |
MX (1) | MX2008000150A (de) |
MY (1) | MY141290A (de) |
NO (1) | NO20080567L (de) |
PT (1) | PT1899508E (de) |
RU (1) | RU2394944C2 (de) |
SI (1) | SI1899508T1 (de) |
TW (1) | TWI382964B (de) |
UA (1) | UA88964C2 (de) |
WO (1) | WO2007003354A1 (de) |
ZA (1) | ZA200711056B (de) |
Families Citing this family (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI400369B (zh) | 2005-10-06 | 2013-07-01 | Vesuvius Crucible Co | 用於矽結晶的坩堝及其製造方法 |
EP1811064A1 (de) | 2006-01-12 | 2007-07-25 | Vesuvius Crucible Company | Tiegel zur Behandlung einer Siliciumschmelze |
BRPI0706659A2 (pt) | 2006-01-20 | 2011-04-05 | Bp Corp North America Inc | métodos de fabricação de silìcio moldado e de célula solar, células solares, corpos e wafers de silìcio multicristalinos ordenados geometricamente continuos |
JP5153636B2 (ja) * | 2006-08-30 | 2013-02-27 | 京セラ株式会社 | シリコンインゴット製造用鋳型の形成方法、太陽電池素子用基板の製造方法、および太陽電池素子の製造方法 |
NO327122B1 (no) * | 2007-03-26 | 2009-04-27 | Elkem Solar As | Beleggingssystem |
JP2010534189A (ja) * | 2007-07-20 | 2010-11-04 | ビーピー・コーポレーション・ノース・アメリカ・インコーポレーテッド | シード結晶からキャストシリコンを製造するための方法及び装置 |
US8062704B2 (en) | 2007-08-02 | 2011-11-22 | Motech Americas, Llc | Silicon release coating, method of making same, and method of using same |
DE102008031766A1 (de) | 2008-07-04 | 2009-10-15 | Schott Ag | Verfahren zur Herstellung eines beschichteten Tiegels aus einem Tiegelgrünkörper oder aus einem zwischengebrannten Tiegelkörper sowie die Verwendung solch eines beschichteten Tiegels |
CN101775639B (zh) * | 2009-01-08 | 2012-05-30 | 常熟华融太阳能新型材料有限公司 | 用于多晶硅结晶炉炉壁保护的内衬及其制造方法 |
DE102009048741A1 (de) * | 2009-03-20 | 2010-09-30 | Access E.V. | Tiegel zum Schmelzen und Kristallisieren eines Metalls, eines Halbleiters oder einer Metalllegierung, Bauteil für einen Tiegelgrundkörper eines Tiegels und Verfahren zum Herstellen eines Bauteils |
EP2543751A3 (de) | 2009-07-16 | 2013-06-26 | MEMC Singapore Pte. Ltd. | Beschichtete Tiegel sowie Verfahren zu ihrer Herstellung und Verwendung |
NO20092797A1 (no) * | 2009-07-31 | 2011-02-01 | Nordic Ceramics As | Digel |
CN101987985B (zh) * | 2009-08-04 | 2013-05-22 | 财团法人工业技术研究院 | 一种组合物及其用途 |
DE102009056751B4 (de) * | 2009-12-04 | 2011-09-01 | Heraeus Quarzglas Gmbh & Co. Kg | Verfahren für die Herstellung eines Tiegels aus Quarzglas |
EP2514715A1 (de) * | 2009-12-14 | 2012-10-24 | JX Nippon Mining & Metals Corporation | Polykristallines silicium für solarzellen und herstellungsverfahren dafür |
JP5676900B2 (ja) | 2010-03-26 | 2015-02-25 | 三菱マテリアル株式会社 | 多結晶シリコンインゴットの製造方法 |
TWI534307B (zh) * | 2010-06-15 | 2016-05-21 | 中美矽晶製品股份有限公司 | 製造矽晶鑄錠之方法 |
CN101972737B (zh) * | 2010-07-28 | 2013-05-15 | 常州天合光能有限公司 | 坩埚的喷涂工艺 |
CN101912837B (zh) * | 2010-09-09 | 2012-07-25 | 英利能源(中国)有限公司 | 一种用于光伏电池铸锭的坩埚的喷涂方法 |
CN102453954A (zh) * | 2010-10-28 | 2012-05-16 | 上海普罗新能源有限公司 | 用于太阳能级多晶硅制备中的坩埚涂层与其制法及坩埚 |
US20120267280A1 (en) * | 2011-04-25 | 2012-10-25 | Glen Bennett Cook | Vessel for molten semiconducting materials and methods of making the same |
JP2012246166A (ja) * | 2011-05-26 | 2012-12-13 | Kyodo Fine Ceramics Co Ltd | ポリシリコン融解用るつぼ及びその製造方法 |
CN102229502B (zh) * | 2011-06-10 | 2013-06-05 | 东海晶澳太阳能科技有限公司 | 一种晶体硅铸造用的坩埚涂层及其制备方法 |
JP5793036B2 (ja) * | 2011-09-08 | 2015-10-14 | 三菱マテリアル電子化成株式会社 | シリコンインゴット鋳造用積層ルツボ及びその製造方法 |
JP5793035B2 (ja) * | 2011-09-08 | 2015-10-14 | 三菱マテリアル電子化成株式会社 | シリコンインゴット鋳造用積層ルツボ及びその製造方法 |
CN102367572B (zh) * | 2011-09-21 | 2014-01-01 | 安阳市凤凰光伏科技有限公司 | 多晶硅铸锭坩埚喷涂免烧结方法 |
EP2589687A1 (de) * | 2011-11-04 | 2013-05-08 | Vesuvius France (S.A.) | Tiegel und Verfahren zur Herstellung eines (fast) monokristallinen Halbleiterblocks |
DE102012100147A1 (de) * | 2012-01-10 | 2012-12-13 | Schott Solar Ag | Verfahren zur Herstellung von mono-, quasimono- oder multikristallinen Metall- oder Halbmetallkörpern |
CN102586856B (zh) * | 2012-02-01 | 2015-03-11 | 江西赛维Ldk太阳能高科技有限公司 | 一种提高硅锭利用率和籽晶使用次数的坩埚及其制备方法 |
WO2013160236A1 (en) | 2012-04-24 | 2013-10-31 | Saint-Gobain Ceramic Materials A. S. | Silicon nitride containing crucible and a method of producing the silicon nitride containing crucible |
JP2013227171A (ja) * | 2012-04-26 | 2013-11-07 | Kyodo Fine Ceramics Co Ltd | 単結晶シリコン育成用るつぼ、単結晶シリコン育成用るつぼの製造方法、及び単結晶シリコンの製造方法 |
CN104583464A (zh) * | 2012-06-25 | 2015-04-29 | 希利柯尔材料股份有限公司 | 用于纯化硅的耐火坩埚的表面的衬里以及使用该坩埚进行熔化和进一步定向凝固以纯化硅熔融体的方法 |
CN102728532B (zh) * | 2012-06-29 | 2014-08-06 | 宜昌南玻硅材料有限公司 | 一种制备多晶硅铸锭用坩埚免烧结涂层的方法 |
CN102797042B (zh) * | 2012-09-06 | 2015-06-10 | 张礼强 | 一种用于熔解晶体硅的坩埚及其制备方法和喷涂液 |
CN103320854B (zh) * | 2013-06-07 | 2016-03-02 | 英利集团有限公司 | 坩埚用涂层结构、其制备方法及包括其的坩埚 |
CN103604294B (zh) * | 2013-10-30 | 2016-06-22 | 江苏博迁新材料有限公司 | 一种多层同质坩埚及其安装方法 |
CN104711671B (zh) * | 2013-12-11 | 2017-08-25 | 徐州协鑫太阳能材料有限公司 | 坩埚涂层结构、制备方法及坩埚 |
CN104047048A (zh) * | 2014-06-17 | 2014-09-17 | 徐州工业职业技术学院 | 一种新型铸锭坩埚及其制备方法 |
CN105154971B (zh) * | 2015-09-12 | 2016-09-28 | 无锡舜阳新能源科技股份有限公司 | 一种高纯涂层式多晶硅坩埚及其涂层的涂刷方法 |
GB2550415A (en) * | 2016-05-18 | 2017-11-22 | Rec Solar Pte Ltd | Silicon ingot growth crucible with patterned protrusion structured layer |
TW201816200A (zh) * | 2016-08-03 | 2018-05-01 | 法商維蘇威法國公司 | 用於熔融矽結晶之坩鍋、其製造方法及其用途 |
CN109608052B (zh) * | 2018-12-25 | 2021-12-03 | 宁波宝斯达坩埚保温制品有限公司 | 一种石英坩埚表面涂覆装置 |
DE102019206489A1 (de) * | 2019-05-06 | 2020-11-12 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren und Tiegel zur Herstellung von partikel- und stickstoff-freien Silicium-Ingots mittels gerichteter Erstarrung, Silicium-Ingot und die Verwendung des Tiegels |
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Publication number | Priority date | Publication date | Assignee | Title |
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US3660075A (en) | 1969-10-16 | 1972-05-02 | Atomic Energy Commission | CRUCIBLE COATING FOR PREPARATION OF U AND P ALLOYS CONTAINING Zr OR Hf |
DE1957952A1 (de) | 1969-11-18 | 1971-05-27 | Siemens Ag | Siliciumnitridbeschichtung an Quarzwaenden fuer Diffusions- und Oxydationsreaktoren |
US4218418A (en) | 1978-06-22 | 1980-08-19 | Crystal Systems, Inc. | Processes of casting an ingot and making a silica container |
US4741925A (en) | 1987-09-14 | 1988-05-03 | Gte Products Corporation | Method of forming silicon nitride coating |
US5431869A (en) | 1993-01-12 | 1995-07-11 | Council Of Scientific & Industrial Research | Process for the preparation of polycrystalline silicon ingot |
JP4051181B2 (ja) * | 2001-03-30 | 2008-02-20 | 京セラ株式会社 | シリコン鋳造用鋳型及びこれを用いた太陽電池の形成方法 |
UA81278C2 (en) | 2002-12-06 | 2007-12-25 | Vessel for holding a silicon and method for its making |
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2005
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2006
- 2006-06-27 TW TW095123068A patent/TWI382964B/zh not_active IP Right Cessation
- 2006-06-29 MY MYPI20063108A patent/MY141290A/en unknown
- 2006-06-30 ES ES06776097T patent/ES2343203T3/es active Active
- 2006-06-30 EP EP06776097A patent/EP1899508B1/de not_active Not-in-force
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- 2006-06-30 KR KR1020087000850A patent/KR20080025140A/ko not_active Application Discontinuation
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- 2006-06-30 AT AT06776097T patent/ATE468426T1/de active
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ES2343203T3 (es) | 2010-07-26 |
CN101213328A (zh) | 2008-07-02 |
CN101213328B (zh) | 2010-07-14 |
RU2008103402A (ru) | 2009-08-10 |
DE602006014406D1 (de) | 2010-07-01 |
EP1899508B1 (de) | 2010-05-19 |
MY141290A (en) | 2010-04-16 |
EP1899508A1 (de) | 2008-03-19 |
MX2008000150A (es) | 2008-03-26 |
NO20080567L (no) | 2008-01-30 |
US20080196656A1 (en) | 2008-08-21 |
RU2394944C2 (ru) | 2010-07-20 |
JP2008544937A (ja) | 2008-12-11 |
AU2006265391A1 (en) | 2007-01-11 |
EP1739209A1 (de) | 2007-01-03 |
ZA200711056B (en) | 2009-04-29 |
KR20080025140A (ko) | 2008-03-19 |
TW200710049A (en) | 2007-03-16 |
AU2006265391B2 (en) | 2011-09-01 |
SI1899508T1 (sl) | 2010-08-31 |
DK1899508T3 (da) | 2010-07-26 |
WO2007003354A1 (en) | 2007-01-11 |
US8152920B2 (en) | 2012-04-10 |
CA2611858C (en) | 2012-10-30 |
BRPI0612805A2 (pt) | 2012-10-02 |
TWI382964B (zh) | 2013-01-21 |
PT1899508E (pt) | 2010-07-26 |
CA2611858A1 (en) | 2007-01-11 |
UA88964C2 (ru) | 2009-12-10 |
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