RU2008103402A - Тигель для кристаллизации кремния - Google Patents
Тигель для кристаллизации кремния Download PDFInfo
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- RU2008103402A RU2008103402A RU2008103402/15A RU2008103402A RU2008103402A RU 2008103402 A RU2008103402 A RU 2008103402A RU 2008103402/15 A RU2008103402/15 A RU 2008103402/15A RU 2008103402 A RU2008103402 A RU 2008103402A RU 2008103402 A RU2008103402 A RU 2008103402A
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- silicon
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- intermediate layer
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- silicon nitride
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- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
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- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/001—General methods for coating; Devices therefor
- C03C17/003—General methods for coating; Devices therefor for hollow ware, e.g. containers
- C03C17/004—Coating the inside
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- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
- C03C17/3429—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating
- C03C17/3435—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating comprising a nitride, oxynitride, boronitride or carbonitride
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- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
- C03C17/3429—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating
- C03C17/3482—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating comprising silicon, hydrogenated silicon or a silicide
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- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/89—Coating or impregnation for obtaining at least two superposed coatings having different compositions
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/11—Deposition methods from solutions or suspensions
- C03C2218/112—Deposition methods from solutions or suspensions by spraying
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/11—Deposition methods from solutions or suspensions
- C03C2218/114—Deposition methods from solutions or suspensions by brushing, pouring or doctorblading
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Geochemistry & Mineralogy (AREA)
- General Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Structural Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
- Crucibles And Fluidized-Bed Furnaces (AREA)
Abstract
1. Тигель для кристаллизации кремния, который содержит ! основной корпус, который имеет дно и боковые стенки, образующие внутренний объем тигля; ! подложку, которая содержит от 80 до 100 вес.% нитрида кремния, расположенную у поверхности боковых стенок, обращенной к внутреннему объему; ! промежуточный слой, который содержит от 50 до 100 вес.% диоксида кремния, нанесенный сверху от подложки; ! поверхностный слой, который содержит от 50 до 100 вес.% нитрида кремния, до 50 вес.% диоксида кремния и до 20 вес.% кремния, нанесенный сверху от промежуточного слоя. ! 2. Тигель по п.1, отличающийся тем, что подложка имеет толщину от 20 до 300 мкм. ! 3. Тигель по п.1, отличающийся тем, что промежуточный слой имеет толщину от 50 до 500 мкм. ! 4. Тигель по одному из пп.1-3, отличающийся тем, что он содержит дополнительный промежуточный слой сверху от первого промежуточного слоя, который содержит до 50 вес.% нитрида кремния, с остатком, содержащим диоксид кремния. ! 5. Тигель по п.4, отличающийся тем, что дополнительный промежуточный слой имеет толщину до 200 мкм. ! 6. Тигель по п.1, отличающийся тем, что поверхностный слой имеет толщину от 50 мкм до 500 мкм. ! 7. Тигель по п.1, отличающийся тем, что поверхностный слой содержит от 50 до 100 вес.% Si3N4, до 40 вес.% SiO2 и до 10 вес.% кремния. ! 8. Способ изготовления тигля для кристаллизации кремния, который содержит следующие операции: ! использование основного корпуса тигля, который имеет дно и боковые стенки, образующие внутренний объем; ! нанесение подложки, которая содержит от 80 до 100 вес.% нитрида кремния, у поверхности боковых стенок, обращенной к внутреннему объему; ! сверху подложки нанесение промежуточного слоя, который содержит от 50 до 100 вес
Claims (11)
1. Тигель для кристаллизации кремния, который содержит
основной корпус, который имеет дно и боковые стенки, образующие внутренний объем тигля;
подложку, которая содержит от 80 до 100 вес.% нитрида кремния, расположенную у поверхности боковых стенок, обращенной к внутреннему объему;
промежуточный слой, который содержит от 50 до 100 вес.% диоксида кремния, нанесенный сверху от подложки;
поверхностный слой, который содержит от 50 до 100 вес.% нитрида кремния, до 50 вес.% диоксида кремния и до 20 вес.% кремния, нанесенный сверху от промежуточного слоя.
2. Тигель по п.1, отличающийся тем, что подложка имеет толщину от 20 до 300 мкм.
3. Тигель по п.1, отличающийся тем, что промежуточный слой имеет толщину от 50 до 500 мкм.
4. Тигель по одному из пп.1-3, отличающийся тем, что он содержит дополнительный промежуточный слой сверху от первого промежуточного слоя, который содержит до 50 вес.% нитрида кремния, с остатком, содержащим диоксид кремния.
5. Тигель по п.4, отличающийся тем, что дополнительный промежуточный слой имеет толщину до 200 мкм.
6. Тигель по п.1, отличающийся тем, что поверхностный слой имеет толщину от 50 мкм до 500 мкм.
7. Тигель по п.1, отличающийся тем, что поверхностный слой содержит от 50 до 100 вес.% Si3N4, до 40 вес.% SiO2 и до 10 вес.% кремния.
8. Способ изготовления тигля для кристаллизации кремния, который содержит следующие операции:
использование основного корпуса тигля, который имеет дно и боковые стенки, образующие внутренний объем;
нанесение подложки, которая содержит от 80 до 100 вес.% нитрида кремния, у поверхности боковых стенок, обращенной к внутреннему объему;
сверху подложки нанесение промежуточного слоя, который содержит от 50 до 100 вес.% диоксида кремния;
нанесение поверхностного слоя, который содержит от 50 до 100 вес.% нитрида кремния, до 50 вес.% диоксида кремния и до 20 вес.% кремния, сверху промежуточного слоя.
9. Способ по п.8, отличающийся тем, что он дополнительно включает в себя нанесение сверху промежуточного слоя дополнительного промежуточного слоя, который содержит до 50 вес.% нитрида кремния, с остатком, содержащим диоксид кремния.
10. Способ по п.8, отличающийся тем, что по меньшей мере одну из операций нанесения подложки или слоев осуществляют при помощи распыления.
11. Способ по одному из пп.8-10, отличающийся тем, что он дополнительно включает операцию нагревания тигля при температуре и времени, которые позволяют кальцинировать органические соединения, присутствующие в покрытии.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP05076520A EP1739209A1 (en) | 2005-07-01 | 2005-07-01 | Crucible for the crystallization of silicon |
EP05076520.5 | 2005-07-01 |
Publications (2)
Publication Number | Publication Date |
---|---|
RU2008103402A true RU2008103402A (ru) | 2009-08-10 |
RU2394944C2 RU2394944C2 (ru) | 2010-07-20 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
RU2008103402/15A RU2394944C2 (ru) | 2005-07-01 | 2006-06-30 | Тигель для кристаллизации кремния |
Country Status (22)
Country | Link |
---|---|
US (1) | US8152920B2 (ru) |
EP (2) | EP1739209A1 (ru) |
JP (1) | JP2008544937A (ru) |
KR (1) | KR20080025140A (ru) |
CN (1) | CN101213328B (ru) |
AT (1) | ATE468426T1 (ru) |
AU (1) | AU2006265391B2 (ru) |
BR (1) | BRPI0612805A2 (ru) |
CA (1) | CA2611858C (ru) |
DE (1) | DE602006014406D1 (ru) |
DK (1) | DK1899508T3 (ru) |
ES (1) | ES2343203T3 (ru) |
MX (1) | MX2008000150A (ru) |
MY (1) | MY141290A (ru) |
NO (1) | NO20080567L (ru) |
PT (1) | PT1899508E (ru) |
RU (1) | RU2394944C2 (ru) |
SI (1) | SI1899508T1 (ru) |
TW (1) | TWI382964B (ru) |
UA (1) | UA88964C2 (ru) |
WO (1) | WO2007003354A1 (ru) |
ZA (1) | ZA200711056B (ru) |
Families Citing this family (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI400369B (zh) | 2005-10-06 | 2013-07-01 | Vesuvius Crucible Co | 用於矽結晶的坩堝及其製造方法 |
EP1811064A1 (fr) | 2006-01-12 | 2007-07-25 | Vesuvius Crucible Company | Creuset pour le traitement de silicium à l'état fondu |
JP5486190B2 (ja) | 2006-01-20 | 2014-05-07 | エイエムジー・アイデアルキャスト・ソーラー・コーポレーション | 光電変換用単結晶成型シリコンおよび単結晶成型シリコン本体の製造方法および装置 |
WO2008026688A1 (fr) * | 2006-08-30 | 2008-03-06 | Kyocera Corporation | Procédé de formation d'un moule pour la production d'un lingot de silicium, procédé de production d'un substrat pour élément de cellule solaire, procédé de production d'un élément de cellule solaire et moule pour la production d'un lingot de silicium |
NO327122B1 (no) * | 2007-03-26 | 2009-04-27 | Elkem Solar As | Beleggingssystem |
WO2009014957A2 (en) * | 2007-07-20 | 2009-01-29 | Bp Corporation North America Inc. | Methods for manufacturing cast silicon from seed crystals |
US8062704B2 (en) * | 2007-08-02 | 2011-11-22 | Motech Americas, Llc | Silicon release coating, method of making same, and method of using same |
DE102008031766A1 (de) | 2008-07-04 | 2009-10-15 | Schott Ag | Verfahren zur Herstellung eines beschichteten Tiegels aus einem Tiegelgrünkörper oder aus einem zwischengebrannten Tiegelkörper sowie die Verwendung solch eines beschichteten Tiegels |
CN101775639B (zh) * | 2009-01-08 | 2012-05-30 | 常熟华融太阳能新型材料有限公司 | 用于多晶硅结晶炉炉壁保护的内衬及其制造方法 |
DE102009048741A1 (de) * | 2009-03-20 | 2010-09-30 | Access E.V. | Tiegel zum Schmelzen und Kristallisieren eines Metalls, eines Halbleiters oder einer Metalllegierung, Bauteil für einen Tiegelgrundkörper eines Tiegels und Verfahren zum Herstellen eines Bauteils |
WO2011009062A2 (en) | 2009-07-16 | 2011-01-20 | Memc Singapore Pte, Ltd. | Coated crucibles and methods for preparing and use thereof |
NO20092797A1 (no) * | 2009-07-31 | 2011-02-01 | Nordic Ceramics As | Digel |
CN101987985B (zh) * | 2009-08-04 | 2013-05-22 | 财团法人工业技术研究院 | 一种组合物及其用途 |
DE102009056751B4 (de) * | 2009-12-04 | 2011-09-01 | Heraeus Quarzglas Gmbh & Co. Kg | Verfahren für die Herstellung eines Tiegels aus Quarzglas |
US20120251426A1 (en) * | 2009-12-14 | 2012-10-04 | Jx Nippon Mining & Metals Corporation | Polycrystalline Silicon For Solar Cell And Preparation Method Thereof |
JP5676900B2 (ja) * | 2010-03-26 | 2015-02-25 | 三菱マテリアル株式会社 | 多結晶シリコンインゴットの製造方法 |
TWI534307B (zh) * | 2010-06-15 | 2016-05-21 | 中美矽晶製品股份有限公司 | 製造矽晶鑄錠之方法 |
CN101972737B (zh) * | 2010-07-28 | 2013-05-15 | 常州天合光能有限公司 | 坩埚的喷涂工艺 |
CN101912837B (zh) * | 2010-09-09 | 2012-07-25 | 英利能源(中国)有限公司 | 一种用于光伏电池铸锭的坩埚的喷涂方法 |
CN102453954A (zh) * | 2010-10-28 | 2012-05-16 | 上海普罗新能源有限公司 | 用于太阳能级多晶硅制备中的坩埚涂层与其制法及坩埚 |
US20120267280A1 (en) * | 2011-04-25 | 2012-10-25 | Glen Bennett Cook | Vessel for molten semiconducting materials and methods of making the same |
JP2012246166A (ja) * | 2011-05-26 | 2012-12-13 | Kyodo Fine Ceramics Co Ltd | ポリシリコン融解用るつぼ及びその製造方法 |
CN102229502B (zh) * | 2011-06-10 | 2013-06-05 | 东海晶澳太阳能科技有限公司 | 一种晶体硅铸造用的坩埚涂层及其制备方法 |
JP5793035B2 (ja) * | 2011-09-08 | 2015-10-14 | 三菱マテリアル電子化成株式会社 | シリコンインゴット鋳造用積層ルツボ及びその製造方法 |
JP5793036B2 (ja) * | 2011-09-08 | 2015-10-14 | 三菱マテリアル電子化成株式会社 | シリコンインゴット鋳造用積層ルツボ及びその製造方法 |
CN102367572B (zh) * | 2011-09-21 | 2014-01-01 | 安阳市凤凰光伏科技有限公司 | 多晶硅铸锭坩埚喷涂免烧结方法 |
EP2589687A1 (en) * | 2011-11-04 | 2013-05-08 | Vesuvius France (S.A.) | Crucible and method for the production of a (near ) monocrystalline semiconductor ingot |
DE102012100147A1 (de) * | 2012-01-10 | 2012-12-13 | Schott Solar Ag | Verfahren zur Herstellung von mono-, quasimono- oder multikristallinen Metall- oder Halbmetallkörpern |
CN102586856B (zh) * | 2012-02-01 | 2015-03-11 | 江西赛维Ldk太阳能高科技有限公司 | 一种提高硅锭利用率和籽晶使用次数的坩埚及其制备方法 |
WO2013160236A1 (en) | 2012-04-24 | 2013-10-31 | Saint-Gobain Ceramic Materials A. S. | Silicon nitride containing crucible and a method of producing the silicon nitride containing crucible |
JP2013227171A (ja) * | 2012-04-26 | 2013-11-07 | Kyodo Fine Ceramics Co Ltd | 単結晶シリコン育成用るつぼ、単結晶シリコン育成用るつぼの製造方法、及び単結晶シリコンの製造方法 |
EP2864529A1 (en) * | 2012-06-25 | 2015-04-29 | Silicor Materials Inc. | Lining for surfaces of a refractory crucible for purification of silicon melt and method of purification of the silicon melt using that crucible (s) for melting and further directional solidification |
CN102728532B (zh) * | 2012-06-29 | 2014-08-06 | 宜昌南玻硅材料有限公司 | 一种制备多晶硅铸锭用坩埚免烧结涂层的方法 |
CN102797042B (zh) * | 2012-09-06 | 2015-06-10 | 张礼强 | 一种用于熔解晶体硅的坩埚及其制备方法和喷涂液 |
CN103320854B (zh) * | 2013-06-07 | 2016-03-02 | 英利集团有限公司 | 坩埚用涂层结构、其制备方法及包括其的坩埚 |
CN103604294B (zh) * | 2013-10-30 | 2016-06-22 | 江苏博迁新材料有限公司 | 一种多层同质坩埚及其安装方法 |
CN104711671B (zh) * | 2013-12-11 | 2017-08-25 | 徐州协鑫太阳能材料有限公司 | 坩埚涂层结构、制备方法及坩埚 |
CN104047048A (zh) * | 2014-06-17 | 2014-09-17 | 徐州工业职业技术学院 | 一种新型铸锭坩埚及其制备方法 |
CN105154971B (zh) * | 2015-09-12 | 2016-09-28 | 无锡舜阳新能源科技股份有限公司 | 一种高纯涂层式多晶硅坩埚及其涂层的涂刷方法 |
GB2550415A (en) * | 2016-05-18 | 2017-11-22 | Rec Solar Pte Ltd | Silicon ingot growth crucible with patterned protrusion structured layer |
TW201816200A (zh) * | 2016-08-03 | 2018-05-01 | 法商維蘇威法國公司 | 用於熔融矽結晶之坩鍋、其製造方法及其用途 |
CN109608052B (zh) * | 2018-12-25 | 2021-12-03 | 宁波宝斯达坩埚保温制品有限公司 | 一种石英坩埚表面涂覆装置 |
DE102019206489A1 (de) * | 2019-05-06 | 2020-11-12 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren und Tiegel zur Herstellung von partikel- und stickstoff-freien Silicium-Ingots mittels gerichteter Erstarrung, Silicium-Ingot und die Verwendung des Tiegels |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3660075A (en) | 1969-10-16 | 1972-05-02 | Atomic Energy Commission | CRUCIBLE COATING FOR PREPARATION OF U AND P ALLOYS CONTAINING Zr OR Hf |
DE1957952A1 (de) | 1969-11-18 | 1971-05-27 | Siemens Ag | Siliciumnitridbeschichtung an Quarzwaenden fuer Diffusions- und Oxydationsreaktoren |
US4218418A (en) | 1978-06-22 | 1980-08-19 | Crystal Systems, Inc. | Processes of casting an ingot and making a silica container |
US4741925A (en) | 1987-09-14 | 1988-05-03 | Gte Products Corporation | Method of forming silicon nitride coating |
US5431869A (en) | 1993-01-12 | 1995-07-11 | Council Of Scientific & Industrial Research | Process for the preparation of polycrystalline silicon ingot |
JP4051181B2 (ja) * | 2001-03-30 | 2008-02-20 | 京セラ株式会社 | シリコン鋳造用鋳型及びこれを用いた太陽電池の形成方法 |
UA81278C2 (en) | 2002-12-06 | 2007-12-25 | Vessel for holding a silicon and method for its making |
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TWI382964B (zh) | 2013-01-21 |
PT1899508E (pt) | 2010-07-26 |
CA2611858C (en) | 2012-10-30 |
ATE468426T1 (de) | 2010-06-15 |
UA88964C2 (ru) | 2009-12-10 |
DE602006014406D1 (de) | 2010-07-01 |
CN101213328A (zh) | 2008-07-02 |
EP1899508B1 (en) | 2010-05-19 |
WO2007003354A1 (en) | 2007-01-11 |
MY141290A (en) | 2010-04-16 |
ES2343203T3 (es) | 2010-07-26 |
SI1899508T1 (sl) | 2010-08-31 |
KR20080025140A (ko) | 2008-03-19 |
JP2008544937A (ja) | 2008-12-11 |
CN101213328B (zh) | 2010-07-14 |
EP1899508A1 (en) | 2008-03-19 |
US8152920B2 (en) | 2012-04-10 |
US20080196656A1 (en) | 2008-08-21 |
TW200710049A (en) | 2007-03-16 |
RU2394944C2 (ru) | 2010-07-20 |
CA2611858A1 (en) | 2007-01-11 |
AU2006265391B2 (en) | 2011-09-01 |
NO20080567L (no) | 2008-01-30 |
ZA200711056B (en) | 2009-04-29 |
DK1899508T3 (da) | 2010-07-26 |
AU2006265391A1 (en) | 2007-01-11 |
MX2008000150A (es) | 2008-03-26 |
BRPI0612805A2 (pt) | 2012-10-02 |
EP1739209A1 (en) | 2007-01-03 |
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