UA97488C2 - Способ очистки кремнийсодержащего материала низкой чистоты, применение барабанной печи в нем, расплав кремнийсодержащего материала, отходящие газы и твердый поликристаллический кремний, полученные данным способом - Google Patents
Способ очистки кремнийсодержащего материала низкой чистоты, применение барабанной печи в нем, расплав кремнийсодержащего материала, отходящие газы и твердый поликристаллический кремний, полученные данным способомInfo
- Publication number
- UA97488C2 UA97488C2 UAA200903632A UAA200903632A UA97488C2 UA 97488 C2 UA97488 C2 UA 97488C2 UA A200903632 A UAA200903632 A UA A200903632A UA A200903632 A UAA200903632 A UA A200903632A UA 97488 C2 UA97488 C2 UA 97488C2
- Authority
- UA
- Ukraine
- Prior art keywords
- silicon material
- purity silicon
- melt
- low
- purity
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/113—Silicon oxides; Hydrates thereof
- C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B7/00—Rotary-drum furnaces, i.e. horizontal or slightly inclined
- F27B7/06—Rotary-drum furnaces, i.e. horizontal or slightly inclined adapted for treating the charge in vacuum or special atmosphere
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B7/00—Rotary-drum furnaces, i.e. horizontal or slightly inclined
- F27B7/20—Details, accessories, or equipment peculiar to rotary-drum furnaces
- F27B7/2083—Arrangements for the melting of metals or the treatment of molten metals
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Silicon Compounds (AREA)
- Manufacture And Refinement Of Metals (AREA)
- Photovoltaic Devices (AREA)
Abstract
Заявлен способ очистки кремнийсодержащего материала низкой чистоты с получением кремнийсодержащего материала более высокой чистоты. Способ включает обеспечение плавильного устройства, оборудованного кислородной горелкой, и плавление в данном плавильном устройстве кремнийсодержащего материала низкой чистоты с целью получения расплава кремнийсодержащего материала более высокой чистоты. Плавильное устройство может включать барабанную печь, плавление кремнийсодержащего материала низкой чистоты может осуществляться при температуре в диапазоне от 1410 °C до 1700 °C в ок
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US84437206P | 2006-09-14 | 2006-09-14 | |
PCT/CA2007/001646 WO2008031229A1 (en) | 2006-09-14 | 2007-09-13 | Process and apparatus for purifying low-grade silicon material |
Publications (1)
Publication Number | Publication Date |
---|---|
UA97488C2 true UA97488C2 (ru) | 2012-02-27 |
Family
ID=39183328
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
UAA200903632A UA97488C2 (ru) | 2006-09-14 | 2007-09-13 | Способ очистки кремнийсодержащего материала низкой чистоты, применение барабанной печи в нем, расплав кремнийсодержащего материала, отходящие газы и твердый поликристаллический кремний, полученные данным способом |
Country Status (17)
Country | Link |
---|---|
US (1) | US20080253955A1 (ru) |
EP (1) | EP2074060A4 (ru) |
JP (1) | JP2010503596A (ru) |
KR (1) | KR20090053807A (ru) |
CN (1) | CN101511731B (ru) |
AU (1) | AU2007295860A1 (ru) |
BR (1) | BRPI0716934A2 (ru) |
CA (1) | CA2660386C (ru) |
EA (1) | EA015387B1 (ru) |
EG (1) | EG25136A (ru) |
GE (1) | GEP20115178B (ru) |
IL (1) | IL197472A0 (ru) |
MX (1) | MX2009002808A (ru) |
NO (1) | NO20091339L (ru) |
UA (1) | UA97488C2 (ru) |
WO (1) | WO2008031229A1 (ru) |
ZA (1) | ZA200900898B (ru) |
Families Citing this family (26)
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NO318092B1 (no) * | 2002-05-22 | 2005-01-31 | Elkem Materials | Kalsium-silikatbasert slagg, fremgangsmate for fremstilling av kalsium-silikatbasert slagg, og anvendelse for slaggbehandling av smeltet silium |
EP2024285B1 (en) * | 2006-04-04 | 2014-06-11 | Silicor Materials Inc. | Method for purifying silicon |
KR20100022516A (ko) * | 2007-06-08 | 2010-03-02 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 금속 규소의 응고 방법 |
MY143807A (en) * | 2007-09-13 | 2011-07-15 | Silicium Becancour Inc | Process for the production of medium and high purity silicon from metallurgical grade silicon |
US7959730B2 (en) * | 2007-10-03 | 2011-06-14 | 6N Silicon Inc. | Method for processing silicon powder to obtain silicon crystals |
JP2010052952A (ja) * | 2008-08-26 | 2010-03-11 | Central Glass Co Ltd | シリコンの精製方法 |
TW201033123A (en) * | 2009-03-13 | 2010-09-16 | Radiant Technology Co Ltd | Method for manufacturing a silicon material with high purity |
IT1394029B1 (it) | 2009-05-12 | 2012-05-25 | Raysolar S R L | Metodo per la purificazione di silicio ed apparato con cui realizzarlo |
DE102009034317A1 (de) | 2009-07-23 | 2011-02-03 | Q-Cells Se | Verfahren zur Herstellung durchbruchsicherer p-Typ Solarzellen aus umg-Silizium |
JP5740584B2 (ja) * | 2009-09-18 | 2015-06-24 | エービービー エービー | シリコンを結晶化させる装置及び方法 |
CN101724900B (zh) * | 2009-11-24 | 2012-05-23 | 厦门大学 | 一种多晶硅提纯装置及提纯方法 |
CN102639439B (zh) * | 2009-12-01 | 2014-05-07 | 道康宁公司 | 旋转铸造工艺 |
DE102010001093A1 (de) * | 2010-01-21 | 2011-07-28 | Evonik Degussa GmbH, 45128 | Verfahren zur Grobentkohlung einer Siliciumschmelze |
GB2477782B (en) | 2010-02-12 | 2012-08-29 | Metallkraft As | A method for refining silicon |
CN102001661B (zh) * | 2010-11-22 | 2012-07-04 | 东海晶澳太阳能科技有限公司 | 一种冶金硅造渣除硼提纯方法 |
EP2813471A4 (en) * | 2012-02-06 | 2015-11-11 | Silicio Ferrosolar S L U | METHOD FOR REFINING MOLTEN METAL OR SEMICONDUCTOR BATH AND VACUUM PROCESSING DEVICE |
CN103266349B (zh) * | 2013-05-31 | 2015-07-15 | 大连理工大学 | 高纯中空硅材料、多晶硅铸锭硅真空固液分离方法及设备 |
CN106744978B (zh) * | 2016-12-09 | 2019-03-12 | 成都斯力康科技股份有限公司 | 一种利用硅渣进行熔炼生产硅锭的工艺 |
CN106517212B (zh) * | 2016-12-09 | 2018-11-02 | 成都斯力康科技股份有限公司 | 一种利用感应炉熔硅的起炉工艺 |
CN106744970B (zh) * | 2016-12-09 | 2020-01-31 | 成都斯力康科技股份有限公司 | 一种利用感应炉熔硅的铝锭起炉工艺 |
CN107055545B (zh) * | 2016-12-09 | 2019-01-25 | 成都斯力康科技股份有限公司 | 一种利用硅粉进行熔炼生产硅锭的工艺 |
TWI619855B (zh) * | 2016-12-21 | 2018-04-01 | Sun Wen Bin | 分凝提純高純矽之方法 |
CN109133069A (zh) * | 2018-11-19 | 2019-01-04 | 成都斯力康科技股份有限公司 | 精炼法提纯工业硅的工艺及设备 |
JP7528548B2 (ja) | 2020-06-05 | 2024-08-06 | トヨタ自動車株式会社 | 活物質、電池およびこれらの製造方法 |
EP4082966A1 (en) * | 2021-04-26 | 2022-11-02 | Ferroglobe Innovation, S.L. | Method for obtaining purified silicon metal |
JP7494800B2 (ja) | 2021-06-04 | 2024-06-04 | トヨタ自動車株式会社 | ゲストフリーシリコンクラスレートの製造方法、ゲストフリーシリコンクラスレートの製造装置 |
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-
2007
- 2007-09-13 EA EA200970275A patent/EA015387B1/ru not_active IP Right Cessation
- 2007-09-13 CN CN2007800331820A patent/CN101511731B/zh not_active Expired - Fee Related
- 2007-09-13 KR KR1020097004910A patent/KR20090053807A/ko not_active Application Discontinuation
- 2007-09-13 UA UAA200903632A patent/UA97488C2/ru unknown
- 2007-09-13 BR BRPI0716934-5A2A patent/BRPI0716934A2/pt not_active IP Right Cessation
- 2007-09-13 US US11/901,146 patent/US20080253955A1/en not_active Abandoned
- 2007-09-13 JP JP2009527664A patent/JP2010503596A/ja not_active Withdrawn
- 2007-09-13 GE GEAP200711223A patent/GEP20115178B/en unknown
- 2007-09-13 AU AU2007295860A patent/AU2007295860A1/en not_active Abandoned
- 2007-09-13 WO PCT/CA2007/001646 patent/WO2008031229A1/en active Application Filing
- 2007-09-13 CA CA2660386A patent/CA2660386C/en not_active Expired - Fee Related
- 2007-09-13 EP EP07815840.9A patent/EP2074060A4/en not_active Withdrawn
- 2007-09-13 ZA ZA200900898A patent/ZA200900898B/xx unknown
- 2007-09-13 MX MX2009002808A patent/MX2009002808A/es active IP Right Grant
-
2009
- 2009-03-01 EG EG2009030274A patent/EG25136A/xx active
- 2009-03-08 IL IL197472A patent/IL197472A0/en unknown
- 2009-03-31 NO NO20091339A patent/NO20091339L/no not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
EP2074060A4 (en) | 2015-12-23 |
EA015387B1 (ru) | 2011-08-30 |
AU2007295860A2 (en) | 2009-05-14 |
CA2660386A1 (en) | 2008-03-20 |
AU2007295860A1 (en) | 2008-03-20 |
ZA200900898B (en) | 2010-06-30 |
MX2009002808A (es) | 2009-03-31 |
NO20091339L (no) | 2009-03-31 |
EG25136A (en) | 2011-09-25 |
EA200970275A1 (ru) | 2009-10-30 |
WO2008031229A1 (en) | 2008-03-20 |
BRPI0716934A2 (pt) | 2013-09-17 |
KR20090053807A (ko) | 2009-05-27 |
CA2660386C (en) | 2012-05-01 |
US20080253955A1 (en) | 2008-10-16 |
GEP20115178B (en) | 2011-03-10 |
EP2074060A1 (en) | 2009-07-01 |
CN101511731A (zh) | 2009-08-19 |
IL197472A0 (en) | 2009-12-24 |
CN101511731B (zh) | 2012-02-22 |
JP2010503596A (ja) | 2010-02-04 |
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