BRPI0716934A2 - processo e aparelho para a purificaÇço de material de sÍlica de baixa qualidade - Google Patents

processo e aparelho para a purificaÇço de material de sÍlica de baixa qualidade

Info

Publication number
BRPI0716934A2
BRPI0716934A2 BRPI0716934-5A2A BRPI0716934A BRPI0716934A2 BR PI0716934 A2 BRPI0716934 A2 BR PI0716934A2 BR PI0716934 A BRPI0716934 A BR PI0716934A BR PI0716934 A2 BRPI0716934 A2 BR PI0716934A2
Authority
BR
Brazil
Prior art keywords
purification
low quality
silica material
quality silica
low
Prior art date
Application number
BRPI0716934-5A2A
Other languages
English (en)
Inventor
Dominic Leblanc
Rene Boisvert
Original Assignee
Silicium Becancour Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silicium Becancour Inc filed Critical Silicium Becancour Inc
Publication of BRPI0716934A2 publication Critical patent/BRPI0716934A2/pt

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B7/00—Rotary-drum furnaces, i.e. horizontal or slightly inclined
    • F27B7/06—Rotary-drum furnaces, i.e. horizontal or slightly inclined adapted for treating the charge in vacuum or special atmosphere
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B7/00—Rotary-drum furnaces, i.e. horizontal or slightly inclined
    • F27B7/20—Details, accessories, or equipment peculiar to rotary-drum furnaces
    • F27B7/2083—Arrangements for the melting of metals or the treatment of molten metals

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Silicon Compounds (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Photovoltaic Devices (AREA)
BRPI0716934-5A2A 2006-09-14 2007-09-13 processo e aparelho para a purificaÇço de material de sÍlica de baixa qualidade BRPI0716934A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US84437206P 2006-09-14 2006-09-14
PCT/CA2007/001646 WO2008031229A1 (en) 2006-09-14 2007-09-13 Process and apparatus for purifying low-grade silicon material

Publications (1)

Publication Number Publication Date
BRPI0716934A2 true BRPI0716934A2 (pt) 2013-09-17

Family

ID=39183328

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0716934-5A2A BRPI0716934A2 (pt) 2006-09-14 2007-09-13 processo e aparelho para a purificaÇço de material de sÍlica de baixa qualidade

Country Status (17)

Country Link
US (1) US20080253955A1 (pt)
EP (1) EP2074060A4 (pt)
JP (1) JP2010503596A (pt)
KR (1) KR20090053807A (pt)
CN (1) CN101511731B (pt)
AU (1) AU2007295860A1 (pt)
BR (1) BRPI0716934A2 (pt)
CA (1) CA2660386C (pt)
EA (1) EA015387B1 (pt)
EG (1) EG25136A (pt)
GE (1) GEP20115178B (pt)
IL (1) IL197472A0 (pt)
MX (1) MX2009002808A (pt)
NO (1) NO20091339L (pt)
UA (1) UA97488C2 (pt)
WO (1) WO2008031229A1 (pt)
ZA (1) ZA200900898B (pt)

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US7727502B2 (en) * 2007-09-13 2010-06-01 Silicum Becancour Inc. Process for the production of medium and high purity silicon from metallurgical grade silicon
EP2198077B1 (en) 2007-10-03 2017-05-17 Silicor Materials Inc. Method for processing silicon powder to obtain silicon crystals
JP2010052952A (ja) * 2008-08-26 2010-03-11 Central Glass Co Ltd シリコンの精製方法
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WO2011032594A1 (en) * 2009-09-18 2011-03-24 Abb Ab Apparatus and method for crystallization of silicon
CN101724900B (zh) * 2009-11-24 2012-05-23 厦门大学 一种多晶硅提纯装置及提纯方法
US20120231186A1 (en) * 2009-12-01 2012-09-13 Dow Corning Corporation Rotational casting process
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CN102001661B (zh) * 2010-11-22 2012-07-04 东海晶澳太阳能科技有限公司 一种冶金硅造渣除硼提纯方法
CN104245579A (zh) 2012-02-06 2014-12-24 菲罗索拉硅太阳能公司 金属或半导体熔融液的精制方法和真空精制装置
CN103266349B (zh) * 2013-05-31 2015-07-15 大连理工大学 高纯中空硅材料、多晶硅铸锭硅真空固液分离方法及设备
CN106744978B (zh) * 2016-12-09 2019-03-12 成都斯力康科技股份有限公司 一种利用硅渣进行熔炼生产硅锭的工艺
CN106744970B (zh) * 2016-12-09 2020-01-31 成都斯力康科技股份有限公司 一种利用感应炉熔硅的铝锭起炉工艺
CN107055545B (zh) * 2016-12-09 2019-01-25 成都斯力康科技股份有限公司 一种利用硅粉进行熔炼生产硅锭的工艺
CN106517212B (zh) * 2016-12-09 2018-11-02 成都斯力康科技股份有限公司 一种利用感应炉熔硅的起炉工艺
TWI619855B (zh) * 2016-12-21 2018-04-01 Sun Wen Bin 分凝提純高純矽之方法
CN109133069A (zh) * 2018-11-19 2019-01-04 成都斯力康科技股份有限公司 精炼法提纯工业硅的工艺及设备
JP2021192348A (ja) 2020-06-05 2021-12-16 トヨタ自動車株式会社 活物質、電池およびこれらの製造方法
EP4082966A1 (en) * 2021-04-26 2022-11-02 Ferroglobe Innovation, S.L. Method for obtaining purified silicon metal
JP2022186067A (ja) 2021-06-04 2022-12-15 トヨタ自動車株式会社 ゲストフリーシリコンクラスレートの製造方法、ゲストフリーシリコンクラスレートの製造装置

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Also Published As

Publication number Publication date
AU2007295860A1 (en) 2008-03-20
MX2009002808A (es) 2009-03-31
NO20091339L (no) 2009-03-31
EP2074060A4 (en) 2015-12-23
GEP20115178B (en) 2011-03-10
CA2660386C (en) 2012-05-01
UA97488C2 (ru) 2012-02-27
CN101511731A (zh) 2009-08-19
JP2010503596A (ja) 2010-02-04
ZA200900898B (en) 2010-06-30
CN101511731B (zh) 2012-02-22
US20080253955A1 (en) 2008-10-16
KR20090053807A (ko) 2009-05-27
EA200970275A1 (ru) 2009-10-30
CA2660386A1 (en) 2008-03-20
IL197472A0 (en) 2009-12-24
WO2008031229A1 (en) 2008-03-20
EA015387B1 (ru) 2011-08-30
EG25136A (en) 2011-09-25
AU2007295860A2 (en) 2009-05-14
EP2074060A1 (en) 2009-07-01

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Legal Events

Date Code Title Description
B08L Patent application lapsed because of non payment of annual fee [chapter 8.12 patent gazette]

Free format text: REFERENTE AO NAO RECOLHIMENTO DAS 6A E 7A ANUIDADES.

B08I Publication cancelled [chapter 8.9 patent gazette]

Free format text: ANULADA A PUBLICACAO CODIGO 8.12 NA RPI NO 2277 DE 26/08/2014 POR TER SIDO INDEVIDA.

B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE AS 6A, 7A, 8A, 9A, 10A, 11A, 12A E 13A ANUIDADES.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2602 DE 17-11-2020 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013.