ZA200900898B - Process and apparatus for purifying low-grade silicon material - Google Patents

Process and apparatus for purifying low-grade silicon material

Info

Publication number
ZA200900898B
ZA200900898B ZA200900898A ZA200900898A ZA200900898B ZA 200900898 B ZA200900898 B ZA 200900898B ZA 200900898 A ZA200900898 A ZA 200900898A ZA 200900898 A ZA200900898 A ZA 200900898A ZA 200900898 B ZA200900898 B ZA 200900898B
Authority
ZA
South Africa
Prior art keywords
silicon material
grade silicon
purifying low
purifying
low
Prior art date
Application number
ZA200900898A
Other languages
English (en)
Inventor
Dominic Leblanc
Rene Boisvert
Original Assignee
Silicium Becancour Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silicium Becancour Inc filed Critical Silicium Becancour Inc
Publication of ZA200900898B publication Critical patent/ZA200900898B/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B7/00—Rotary-drum furnaces, i.e. horizontal or slightly inclined
    • F27B7/06—Rotary-drum furnaces, i.e. horizontal or slightly inclined adapted for treating the charge in vacuum or special atmosphere
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B7/00—Rotary-drum furnaces, i.e. horizontal or slightly inclined
    • F27B7/20—Details, accessories, or equipment peculiar to rotary-drum furnaces
    • F27B7/2083—Arrangements for the melting of metals or the treatment of molten metals

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Silicon Compounds (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Photovoltaic Devices (AREA)
ZA200900898A 2006-09-14 2007-09-13 Process and apparatus for purifying low-grade silicon material ZA200900898B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US84437206P 2006-09-14 2006-09-14

Publications (1)

Publication Number Publication Date
ZA200900898B true ZA200900898B (en) 2010-06-30

Family

ID=39183328

Family Applications (1)

Application Number Title Priority Date Filing Date
ZA200900898A ZA200900898B (en) 2006-09-14 2007-09-13 Process and apparatus for purifying low-grade silicon material

Country Status (17)

Country Link
US (1) US20080253955A1 (xx)
EP (1) EP2074060A4 (xx)
JP (1) JP2010503596A (xx)
KR (1) KR20090053807A (xx)
CN (1) CN101511731B (xx)
AU (1) AU2007295860A1 (xx)
BR (1) BRPI0716934A2 (xx)
CA (1) CA2660386C (xx)
EA (1) EA015387B1 (xx)
EG (1) EG25136A (xx)
GE (1) GEP20115178B (xx)
IL (1) IL197472A0 (xx)
MX (1) MX2009002808A (xx)
NO (1) NO20091339L (xx)
UA (1) UA97488C2 (xx)
WO (1) WO2008031229A1 (xx)
ZA (1) ZA200900898B (xx)

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WO2011032594A1 (en) 2009-09-18 2011-03-24 Abb Ab Apparatus and method for crystallization of silicon
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KR20120116952A (ko) * 2009-12-01 2012-10-23 다우 코닝 코포레이션 회전 캐스팅 공정
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CN102001661B (zh) * 2010-11-22 2012-07-04 东海晶澳太阳能科技有限公司 一种冶金硅造渣除硼提纯方法
US20150082942A1 (en) 2012-02-06 2015-03-26 Silicio Ferrosolar S.L. Metal or semiconductor melt refinement method, and vacuum refinement device
CN103266349B (zh) * 2013-05-31 2015-07-15 大连理工大学 高纯中空硅材料、多晶硅铸锭硅真空固液分离方法及设备
CN106517212B (zh) * 2016-12-09 2018-11-02 成都斯力康科技股份有限公司 一种利用感应炉熔硅的起炉工艺
CN106744978B (zh) * 2016-12-09 2019-03-12 成都斯力康科技股份有限公司 一种利用硅渣进行熔炼生产硅锭的工艺
CN107055545B (zh) * 2016-12-09 2019-01-25 成都斯力康科技股份有限公司 一种利用硅粉进行熔炼生产硅锭的工艺
CN106744970B (zh) * 2016-12-09 2020-01-31 成都斯力康科技股份有限公司 一种利用感应炉熔硅的铝锭起炉工艺
TWI619855B (zh) * 2016-12-21 2018-04-01 Sun Wen Bin 分凝提純高純矽之方法
CN109133069A (zh) * 2018-11-19 2019-01-04 成都斯力康科技股份有限公司 精炼法提纯工业硅的工艺及设备
JP2021192348A (ja) 2020-06-05 2021-12-16 トヨタ自動車株式会社 活物質、電池およびこれらの製造方法
EP4082966A1 (en) * 2021-04-26 2022-11-02 Ferroglobe Innovation, S.L. Method for obtaining purified silicon metal
JP7494800B2 (ja) 2021-06-04 2024-06-04 トヨタ自動車株式会社 ゲストフリーシリコンクラスレートの製造方法、ゲストフリーシリコンクラスレートの製造装置

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Also Published As

Publication number Publication date
CA2660386C (en) 2012-05-01
AU2007295860A1 (en) 2008-03-20
GEP20115178B (en) 2011-03-10
KR20090053807A (ko) 2009-05-27
CN101511731A (zh) 2009-08-19
EG25136A (en) 2011-09-25
AU2007295860A2 (en) 2009-05-14
EA200970275A1 (ru) 2009-10-30
JP2010503596A (ja) 2010-02-04
EA015387B1 (ru) 2011-08-30
UA97488C2 (ru) 2012-02-27
CN101511731B (zh) 2012-02-22
US20080253955A1 (en) 2008-10-16
CA2660386A1 (en) 2008-03-20
EP2074060A4 (en) 2015-12-23
IL197472A0 (en) 2009-12-24
WO2008031229A1 (en) 2008-03-20
BRPI0716934A2 (pt) 2013-09-17
MX2009002808A (es) 2009-03-31
NO20091339L (no) 2009-03-31
EP2074060A1 (en) 2009-07-01

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