KR101089211B1 - 1차 알칸올 아민을 포함하는 ｌｃｄ 제조용 포토레지스트 박리액 조성물 - Google Patents

1차 알칸올 아민을 포함하는 ｌｃｄ 제조용 포토레지스트 박리액 조성물 Download PDF

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KR101089211B1
KR101089211B1 KR1020100122001A KR20100122001A KR101089211B1 KR 101089211 B1 KR101089211 B1 KR 101089211B1 KR 1020100122001 A KR1020100122001 A KR 1020100122001A KR 20100122001 A KR20100122001 A KR 20100122001A KR 101089211 B1 KR101089211 B1 KR 101089211B1
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South Korea
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weight
photoresist
stripper composition
photoresist stripper
heptanol
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KR1020100122001A
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English (en)
Korean (ko)
Inventor
최호성
전문교
배종일
이종순
양혜성
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엘티씨 (주)
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Priority to KR1020100122001A priority Critical patent/KR101089211B1/ko
Priority to TW100128171A priority patent/TWI465564B/zh
Priority to JP2011187941A priority patent/JP2012118502A/ja
Priority to CN201110271127.3A priority patent/CN102486620B/zh
Priority to CN201610079171.7A priority patent/CN105676602A/zh
Application granted granted Critical
Publication of KR101089211B1 publication Critical patent/KR101089211B1/ko
Priority to JP2013235744A priority patent/JP6006711B2/ja
Priority to JP2016176121A priority patent/JP2017040928A/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Optics & Photonics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Liquid Crystal (AREA)
KR1020100122001A 2010-12-02 2010-12-02 1차 알칸올 아민을 포함하는 ｌｃｄ 제조용 포토레지스트 박리액 조성물 Active KR101089211B1 (ko)

Priority Applications (7)

Application Number Priority Date Filing Date Title
KR1020100122001A KR101089211B1 (ko) 2010-12-02 2010-12-02 1차 알칸올 아민을 포함하는 ｌｃｄ 제조용 포토레지스트 박리액 조성물
TW100128171A TWI465564B (zh) 2010-12-02 2011-08-08 用於液晶顯示器製造過程中之含初級醇胺的光阻剝除組成
JP2011187941A JP2012118502A (ja) 2010-12-02 2011-08-30 １級アルカノールアミンを含むｌｃｄ製造用フォトレジスト剥離液組成物
CN201110271127.3A CN102486620B (zh) 2010-12-02 2011-09-14 用于液晶显示器制造工艺的包含伯烷烃醇胺的光刻胶剥离组合物
CN201610079171.7A CN105676602A (zh) 2010-12-02 2011-09-14 用于液晶显示器制造工艺的包含伯烷烃醇胺的光刻胶剥离组合物
JP2013235744A JP6006711B2 (ja) 2010-12-02 2013-11-14 １級アルカノールアミンを含むｌｃｄ製造用フォトレジスト剥離液組成物
JP2016176121A JP2017040928A (ja) 2010-12-02 2016-09-09 １級アルカノールアミンを含むｌｃｄ製造用フォトレジスト剥離液組成物

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020100122001A KR101089211B1 (ko) 2010-12-02 2010-12-02 1차 알칸올 아민을 포함하는 ｌｃｄ 제조용 포토레지스트 박리액 조성물

Publications (1)

Publication Number Publication Date
KR101089211B1 true KR101089211B1 (ko) 2011-12-02

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Country Status (4)

Country Link
JP (3) JP2012118502A (enExample)
KR (1) KR101089211B1 (enExample)
CN (2) CN105676602A (enExample)
TW (1) TWI465564B (enExample)

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KR20140060910A (ko) * 2012-11-13 2014-05-21 동우 화인켐 주식회사 얼룩 발생 방지용 레지스트 박리액 조성물
KR20150028526A (ko) 2013-09-06 2015-03-16 동우 화인켐 주식회사 레지스트 박리액 조성물 및 이를 이용한 평판표시장치의 제조방법
KR20150028916A (ko) 2013-09-06 2015-03-17 동우 화인켐 주식회사 레지스트 박리액 조성물 및 이를 이용한 평판표시장치의 제조방법
WO2017026803A1 (ko) * 2015-08-13 2017-02-16 엘티씨 (주) Lcd 제조용 포토레지스트 박리액 조성물
KR20200116443A (ko) * 2019-10-01 2020-10-12 동우 화인켐 주식회사 얼룩 발생 방지용 레지스트 박리액 조성물
WO2021101227A1 (ko) 2019-11-21 2021-05-27 엘티씨 (주) 디스플레이 제조용 포토레지스트 박리액 조성물
KR102825130B1 (ko) * 2024-06-13 2025-06-27 엘티씨 (주) 디스플레이 제조용 포토레지스트 박리액 조성물

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US20140100151A1 (en) * 2012-10-08 2014-04-10 Air Products And Chemicals Inc. Stripping and Cleaning Compositions for Removal of Thick Film Resist
KR101668063B1 (ko) * 2013-05-07 2016-10-20 주식회사 엘지화학 포토레지스트 제거용 스트리퍼 조성물 및 이를 사용한 포토레지스트의 박리방법
TWI644931B (zh) * 2013-08-22 2018-12-21 Nissan Chemical Industries, Ltd. 具有橫向電場驅動型液晶顯示元件用液晶配向膜之基板之製造方法
TWI518467B (zh) * 2013-11-15 2016-01-21 達興材料股份有限公司 光阻脫除劑和電子元件及其製造方法
CN106547177A (zh) * 2015-09-16 2017-03-29 东友精细化工有限公司 抗蚀剂剥离液组合物、平板显示器基板及其制造方法
CN106919013B (zh) * 2015-12-28 2021-12-07 安集微电子（上海）有限公司 一种低蚀刻的去除光阻残留物的清洗液
CN106019863B (zh) * 2016-07-14 2019-08-09 江阴江化微电子材料股份有限公司 一种高世代平板铜制程光阻剥离液
CN108235741B (zh) * 2016-12-28 2019-05-28 松下知识产权经营株式会社 抗蚀剂剥离液
CN108949383B (zh) * 2017-05-17 2021-05-25 东曹株式会社 清洗剂组合物和使用其的清洗方法
CN107577121A (zh) * 2017-08-29 2018-01-12 昆山艾森半导体材料有限公司 一种光刻胶去胶液
KR102224907B1 (ko) * 2018-04-17 2021-03-09 엘티씨 (주) 드라이필름 레지스트 박리액 조성물
CN120303619A (zh) * 2022-12-12 2025-07-11 三菱瓦斯化学株式会社 光致抗蚀剂去除用组合物及光致抗蚀剂的去除方法

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KR102032321B1 (ko) * 2012-11-13 2019-10-15 동우 화인켐 주식회사 얼룩 발생 방지용 레지스트 박리액 조성물
KR20140060910A (ko) * 2012-11-13 2014-05-21 동우 화인켐 주식회사 얼룩 발생 방지용 레지스트 박리액 조성물
KR20150028526A (ko) 2013-09-06 2015-03-16 동우 화인켐 주식회사 레지스트 박리액 조성물 및 이를 이용한 평판표시장치의 제조방법
KR20150028916A (ko) 2013-09-06 2015-03-17 동우 화인켐 주식회사 레지스트 박리액 조성물 및 이를 이용한 평판표시장치의 제조방법
CN107924144B (zh) * 2015-08-13 2020-12-29 Ltc有限公司 用于制造液晶显示的光刻胶剥离剂组合物
WO2017026803A1 (ko) * 2015-08-13 2017-02-16 엘티씨 (주) Lcd 제조용 포토레지스트 박리액 조성물
KR101764577B1 (ko) * 2015-08-13 2017-08-23 엘티씨 (주) Lcd 제조용 포토레지스트 박리액 조성물
CN107924144A (zh) * 2015-08-13 2018-04-17 Ltc有限公司 用于制造液晶显示的光刻胶剥离剂组合物
US20180239256A1 (en) * 2015-08-13 2018-08-23 Ltc Co., Ltd. Photoresist Stripper Composition for Manufacturing Liquid Crystal Display
US10859917B2 (en) 2015-08-13 2020-12-08 Ltc Co., Ltd. Photoresist stripper composition for manufacturing liquid crystal display
KR20200116443A (ko) * 2019-10-01 2020-10-12 동우 화인켐 주식회사 얼룩 발생 방지용 레지스트 박리액 조성물
KR102324927B1 (ko) * 2019-10-01 2021-11-12 동우 화인켐 주식회사 얼룩 발생 방지용 레지스트 박리액 조성물
WO2021101227A1 (ko) 2019-11-21 2021-05-27 엘티씨 (주) 디스플레이 제조용 포토레지스트 박리액 조성물
KR20210062762A (ko) 2019-11-21 2021-06-01 엘티씨 (주) 디스플레이 제조용 포토레지스트 박리액 조성물
US12429777B2 (en) 2019-11-21 2025-09-30 Ltc Co., Ltd. Photoresist stripper composition for manufacturing display
KR102825130B1 (ko) * 2024-06-13 2025-06-27 엘티씨 (주) 디스플레이 제조용 포토레지스트 박리액 조성물

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