KR101030935B1 - 플라즈마 반응기용 용사 이트리아 함유 코팅 - Google Patents

플라즈마 반응기용 용사 이트리아 함유 코팅 Download PDF

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Publication number
KR101030935B1
KR101030935B1 KR1020047021152A KR20047021152A KR101030935B1 KR 101030935 B1 KR101030935 B1 KR 101030935B1 KR 1020047021152 A KR1020047021152 A KR 1020047021152A KR 20047021152 A KR20047021152 A KR 20047021152A KR 101030935 B1 KR101030935 B1 KR 101030935B1
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South Korea
Prior art keywords
plasma
coating
yttria
chamber
alloy
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Expired - Lifetime
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KR1020047021152A
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English (en)
Korean (ko)
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KR20050008855A (ko
Inventor
오도넬로버트제이.
도어티존이.
Original Assignee
램 리써치 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/3255—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Plasma Technology (AREA)
KR1020047021152A 2002-06-27 2003-06-12 플라즈마 반응기용 용사 이트리아 함유 코팅 Expired - Lifetime KR101030935B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/180,504 US7311797B2 (en) 2002-06-27 2002-06-27 Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor
US10/180,504 2002-06-27
PCT/US2003/018502 WO2004003962A2 (en) 2002-06-27 2003-06-12 Thermal sprayed yttria-containing coating for plasma reactor

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020117000086A Division KR101107542B1 (ko) 2002-06-27 2003-06-12 플라즈마 반응기용 용사 이트리아 함유 코팅

Publications (2)

Publication Number Publication Date
KR20050008855A KR20050008855A (ko) 2005-01-21
KR101030935B1 true KR101030935B1 (ko) 2011-04-28

Family

ID=29778939

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020047021152A Expired - Lifetime KR101030935B1 (ko) 2002-06-27 2003-06-12 플라즈마 반응기용 용사 이트리아 함유 코팅
KR1020117000086A Expired - Lifetime KR101107542B1 (ko) 2002-06-27 2003-06-12 플라즈마 반응기용 용사 이트리아 함유 코팅

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020117000086A Expired - Lifetime KR101107542B1 (ko) 2002-06-27 2003-06-12 플라즈마 반응기용 용사 이트리아 함유 코팅

Country Status (9)

Country Link
US (2) US7311797B2 (enExample)
EP (1) EP1518255B1 (enExample)
JP (2) JP2005531157A (enExample)
KR (2) KR101030935B1 (enExample)
CN (1) CN1663017A (enExample)
AT (1) ATE545148T1 (enExample)
AU (1) AU2003238006A1 (enExample)
TW (1) TWI328411B (enExample)
WO (1) WO2004003962A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140118871A (ko) * 2013-03-27 2014-10-08 램 리써치 코포레이션 플라즈마 처리 챔버의 조밀한 산화물 코팅된 구성 요소 및 이의 제조 방법
US9309413B2 (en) 2012-06-13 2016-04-12 Korea Institute Of Science And Technology Multi-component thermal spray coating material and production method and coating method thereof

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* Cited by examiner, † Cited by third party
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US7311797B2 (en) 2007-12-25
EP1518255B1 (en) 2012-02-08
AU2003238006A1 (en) 2004-01-19
EP1518255A2 (en) 2005-03-30
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TWI328411B (en) 2010-08-01
US20040002221A1 (en) 2004-01-01
ATE545148T1 (de) 2012-02-15
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AU2003238006A8 (en) 2004-01-19
US7300537B2 (en) 2007-11-27
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