TWI751098B - 經施用塗層的電漿潤濕系統的構件及塗層之用途 - Google Patents
經施用塗層的電漿潤濕系統的構件及塗層之用途 Download PDFInfo
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Abstract
本文揭露用於電漿構件的表面塗層,其在侵略性(例如,氟系的)電漿環境下對化學與電漿物理攻擊具有耐用的優點。相較於其他已知的表面處理,該塗層亦提供對於活性氧、氮、氟、及氫物種而言為低的電漿表面再結合速率。該塗層可施用至任何不需蝕刻或電漿清潔的電漿系統構件,包括但不限於如石英、鋁、或陽極化鋁等材料。此外,藉由將一非反應性塗層施用至系統構件而由此增加流至系統的電漿腔室之激發的電漿物種以增進該系統的效率。
Description
本申請案主張2013年11月21日提出申請之第61/907,214號美國臨時專利申請案之優先權,其揭露全文併於此處以供參考。
本發明一般係關於電漿系統,且更特定而言,係關於用於電漿系統中之零件(tooling)與配件(fixture)的塗層。
本發明一般係關於用於電漿系統之部件的塗層。直接與電漿接觸的部件係遭受化學攻擊、離子轟擊、UV照射、大的溫度變異與梯度以及電場。較佳的電漿系統部件係由鋁或石英製成,因為該等對活性氧、氮、及氫物種而言具有最低的電漿表面再結合速率。然而,當使用含鹵或其他化學上更具侵略性的電漿時,此等材料不再是可接受的選擇。在此環境下,電漿系統構件係典型由如陽極化鋁(anodized aluminum)、鋁、或藍寶石等材料所製造。雖然此等材料具有在對抗化學與物理電漿攻擊有較佳表現之優點,但該等具有實質上較高的電漿表面再結合速率的缺點,因而自電漿流中移除一相當部分的活性氧、氫及氮電漿物種。
此等物種的移除係降低電漿製程的效率。
經配置以降低活性電漿物種的再結合速率且增加流至該系統的活性物種之電漿系統構件,將成為在電漿系統中受歡迎的改良。
本文揭露用於電漿構件的表面塗層,其在侵略性(例如,氟系的)電漿環境下對化學與電漿物理攻擊具有耐用的優點。相較於其他習知的表面處理,該塗層亦提供對活性氧、氮、氟、及氫物種而言為低的電漿表面再結合速率。塗層可施用至任一不需蝕刻或電漿清潔的電漿系統構件,包括但不限於如石英、鋁、或陽極化鋁等材料。此外,藉由將一非反應性塗層施用至系統構件而由此增加流到系統的處理腔室之激發的電漿物種以增進該系統的效率。
因此,在一例示性實施態樣中,本發明提供一種用於降低一經電漿潤濕(plasma wetted)之表面系統構件之反應性的塗層。該塗層包含:釔氧化物(yttria),約具有以下組成:釔,含量為約60%至約80%;氧,含量為約20%至約40%;及/或鋁氮氧化物(aluminum oxynitride),約具有以下組成:鋁,含量介於約25%至約60%之間;
氧,含量介於約20%至約40%之間;氮,含量介於約20%至約40%之間。
其中該塗層係施用至電漿潤濕系統的構件。
在部分例示性實施態樣中,該電漿包含以下之一或多者:原子氧、分子氧、原子氫、分子氫、原子氮、分子氮、分子氬、原子氬、原子氟及分子氟。在各式此等與其他實施態樣中,該電漿包含以下之一或多者:含氟電漿(fluorine-bearing plasma)、含氧電漿、含氫電漿及含氮電漿。在各式例示性實施態樣中,該電漿係一組合電漿。在特定實施態樣中,該含氟電漿包含:CF4、CHF3、CF3H、C2F6、C4F8、SF6、NF3、F2及C4F8O;該含氧電漿包含:O2、O3、N2O、CO、CO2、C4F8O、H2O及H2O2;該含氫電漿包含:H2、CH4、NH3、N2H2、C2H2、H2O、H2O2、N2/H2、He/H2及Ar/H2;以及該含氮電漿包含N2、N2O、NH3、NF3、N2/H2及NO。
在此等與其他例示性實施態樣中,該構件係由石英、鋁、陽極化鋁或其組合所製造。
在各式例示性實施態樣中,該塗層係藉由氣相沉積、濺鍍沉積、熱噴塗塗覆、溶膠-凝膠塗覆、大氣電漿沉積、磁控濺鍍、電子束沉積或脈衝雷射沉積而施用。在部分例示性實施態樣中,氣相沉積係電漿輔助化學氣相沉積(PECVD);物理氣相沉積(PVD);以及化學氣相沉積(CVD)。
在各式其他例示性實施態樣中,該電漿系統係一順流式遠端電漿系統(downstream,remote plasma system)、一感應
耦合電漿系統、一電容耦合電漿系統、一反應性離子蝕刻電漿系統、一大氣電漿系統、以及一離子蝕刻電漿系統。
在一實施態樣中,一如AlON(鋁氮氧化物)之金屬氮氧化物的塗層係直接施用至電漿系統構件。我們發現AlON與電漿流之交互作用係產生一實質上低於陽極化鋁的再結合速率之再結合速率。
在各式實施態樣中,該塗層具有介於約3吉帕(GPa)至約10吉帕之間的硬度、介於約100吉帕至約200吉帕之間的彈性係數(楊氏係數),且該塗層在介於約-150℃與約+600℃之間的溫度下為穩定的。
在另一例示性實施態樣中,本發明教示一種增加電漿系統之效率的方法,包含將一表面塗層施用至不需電漿蝕刻的系統構件,該塗層減少該非蝕刻(non-etched)構件對一電漿流的反應性,其中該表面塗層係:釔氧化物,約具有以下之組成:釔,含量為約60%至約80%;氧,含量為約20%至約40%;及/或鋁氮氧化物,約具有以下之組成:鋁,含量介於約25%至約60%之間;氧,含量介於約20%至約40%之間;氮,含量介於約20%至約40%之間。
其中該塗層係施用至經電漿潤濕系統的構件。
在另一實施態樣中,一如釔氧化物之過渡金屬氧化物的塗層係直接施用至電漿構件。我們發現釔氧化物與電漿流之交互作用係產生一實質上低於陽極化鋁的再結合速率之再結合速率。
在各式例示性實施態樣中,該電漿包含以下之一或多者:原子氧、分子氧、原子氫、分子氫、原子氮、分子氮、分子氬、原子氬、原子氟及分子氟。在各式此等與其他實施態樣中,該電漿包含以下之一或多者:含氟電漿、含氧電漿、含氫電漿及含氮電漿。在各式例示性實施態樣中,該電漿係一組合電漿。在特定實施態樣中,該含氟電漿包含:CF4、CHF3、CF3H、C2F6、C4F8、SF6、NF3、F2及C4F8O;該含氧電漿包含:O2、O3、N2O、CO、CO2、C4F8O、H2O及H2O2;該含氫電漿包含:H2、CH4、NH3、N2H2、C2H2、H2O、H2O2、N2/H2、He/H2及Ar/H2;以及該含氮電漿包含N2、N2O、NH3、NF3、N2/H2及NO。
在此等與其他例示性實施態樣中,該構件係由石英、鋁、陽極化鋁或其組合所製造。
在各式實施態樣中,該塗層係藉由氣相沉積、濺鍍沉積、熱噴塗塗覆、溶膠-凝膠塗覆、大氣電漿沉積、磁控濺鍍、電子束沉積或脈衝雷射沉積而施用。在部分實施態樣中,氣相沉積係電漿輔助化學氣相沉積(PECVD);物理氣相沉積(PVD);以及化學氣相沉積(CVD)。
在各式實施態樣中,該塗層具有介於約3吉帕至約10吉帕之間的硬度、介於約100吉帕至約200吉帕之間的彈性係數(楊氏係數),且該塗層在介於約-150℃與約+600℃之間的溫度下為穩定的。
在又一例示性實施態樣中,本發明教示一種增加電漿系統構件之生命週期的方法,包含將一表面塗層施用至系統構件,該塗層減少該構件對一電漿流的反應性,其中該表面塗層係:釔氧化物,約具有以下之組成:釔,含量為約60%至約80%;氧,含量為約20%至約40%;及/或鋁氮氧化物,約具有以下之組成:鋁,含量介於約25%至約60%之間;氧,含量介於約20%至約40%之間;氮,含量介於約20%至約40%之間。
其中該塗層係施用至經電漿潤濕系統的構件。
在部分例示性實施態樣中,該電漿包含以下之一或多者:原子氧、分子氧、原子氫、分子氫、原子氮、分子氮、分子氬、原子氬、原子氟及分子氟。在各式此等與其他實施態樣中,該電漿包含以下之一或多者:含氟電漿、含氧電漿、含氫電漿及含氮電漿。在各式例示性實施態樣中,該電漿係一組合電漿。在特定實施態樣中,該含氟電漿包含:CF4、CHF3、CF3H、C2F6、
C4F8、SF6、NF3、F2及C4F8O;該含氧電漿包含:O2、O3、N2O、CO、CO2、C4F8O、H2O及H2O2;該含氫電漿包含:H2、CH4、NH3、N2H2、C2H2、H2O、H2O2、N2/H2、He/H2及Ar/H2;以及該含氮電漿包含N2、N2O、NH3、NF3、N2/H2及NO。
在此等與其他例示性實施態樣中,該構件係由石英、鋁、陽極化鋁或其組合所製造。
在部分例示性具體實施態樣中,該塗層係藉由氣相沉積、濺鍍沉積、熱噴塗塗覆、溶膠-凝膠塗覆、大氣電漿沉積、磁控濺鍍、電子束沉積或脈衝雷射沉積而施用。在各式例示性實施態樣中,氣相沉積係電漿輔助化學氣相沉積(PECVD);物理氣相沉積(PVD);以及化學氣相沉積(CVD)。
在各式實施態樣中,該塗層具有介於約3吉帕至約10吉帕之間的硬度、介於約100吉帕至約200吉帕之間的彈性係數(楊氏係數),且該塗層在介於約-150℃與約+600℃之間的溫度下為穩定的。
可施用的其他塗層係過渡金屬氮氧化物與金屬氧化物,其橫跨金屬氮氧化物與過渡金屬氧化物的材料類型。另外可施用以保護腔室構件的其他塗層係包括鑭系或錒系子類型之稀土化合物,包括稀土氧化物、稀土氮化物、及稀土氮氧化物。
結構上,該塗層可藉由電漿輔助化學氣相沉積(PECVD)、物理氣相沉積(PVD)、濺鍍沉積、熱噴塗塗覆、溶膠-凝膠塗覆、大氣電漿沉積、磁控濺鍍、電子束沉積或脈衝雷射
沉積而施用。參見例如於2013年2月14日公開的發明人為困達(Gunda)之WO 2013/023029,舉例而言,其說明藉由PVD製程而沉積一鋁氮氧化物塗層。WO 2013/023029申請案為本案申請人所有,且除了其中之明確定義與申請專利範圍之外,該申請案全文係併於此處以供參考。
第1圖以圖表方式繪示在1托(Torr)、2000瓦下使用O2/FG電漿在電漿清潔工具中對多片晶圓處理的光阻劑移除速率。相比較的二個電漿清潔工具配置為:(i)使用最適化的陽極化鋁擋板以及(ii)使用鋁氮氧化物塗覆的鋁擋板。
第2圖繪示一柱狀圖,顯示對不同電漿化學物質(O2/FG及O2/FG+CF4)及電漿系統(GES-IP、GPL)的光阻劑移除率,該等電漿系統比較四種檔板片配置:(i)最適化的陽極化鋁擋板及(ii)標準陽極化鋁擋板、(iii)經鋁氮氧化物塗覆的鋁擋板、(iv)經釔氧化物塗覆的鋁擋板。
本文揭露用於電漿構件的表面塗層,其在侵略性(例如,氟系的)電漿環境下對化學與電漿物理攻擊具有耐用的優點。相較於其他習知的表面處理,該塗層亦提供對活性氧、氮、氟、及氫物種而言為低的電漿表面結合速率。該塗層可施用至任一不需蝕刻或電漿清潔的電漿系統構件,包括但不限於石英、鋁、或
陽極化鋁等材料。此外,藉由將一非反應性塗層施用至系統構件而由此增加流到系統的電漿腔室之激發的電漿物種以增進該系統的效率。
本文中所用術語係僅用於說明特定實施態樣之目的且不意欲為限制。如本文中所用,除非內文明確說明,否則單數形式「一(a)」、「一(an)」及「該(the)」係意欲同樣包括複數形式。用語「第一」、「第二」等使用並非隱含任一特定順序,而被包括以辨別個別元件。將進一步理解的是,用語「包含(comprises)」及/或「包含(comprising)」或「包括(includes)」及/或「包括(including)」在使用於本說明書中時,係指明所指特徵、區域、整數、步驟、操作、元件、及/或構件存在,但並不排除一或多個其他特徵、區域、整數、步驟、操作、元件、構件、及/或其組合之存在或添加。
除非另有定義,本文中所使用的所有用語(包括技術用語與科學用語)係具有如本實施態樣所屬領域具通常知識者一般瞭解的相同意涵。將進一步瞭解的是,如在常用字典有定義之用語應被解釋為具有與在本發明及相關領域文章中之該等意涵一致的意涵,且除非本文中明確地如此定義,將不在理想化或過度正式的意義上被解釋。
所提及之包含於本文的「實施態樣」、「本發明的實施態樣」、及「所揭露的實施態樣」係指本專利申請案之說明書(包括申請專利範圍之內文、及圖式),本專利申請案並非被認知的先
前技術。
如本文中所用,用語「經電漿潤濕之構件(plasma-wetted component)」係指與一電漿流接觸的任一構件或物件。此類構件或物件可為電漿腔室的一部分或其可為置於電漿腔室中且經受一電漿流的任一物件。
如本文中所用,用語「電漿灰化(plasma ashing)」係指自一蝕刻晶圓或其他基材移除光阻劑的製程。
如本文中所用,用語「灰化腔室」係指一封閉體(enclosure),包含一如晶圓的基材,其係藉由一電漿流而經受電漿蝕刻。
如本文中所用,用語「灰化構件」係指一欲與一電漿流反應之電漿腔室的構件,例如晶圓的光阻劑。
如本文中所用,用語「非灰化構件」係指一不欲與一電漿流反應之電漿腔室的構件。此類構件包括電漿腔室的構成部分,例如閥、擋板、電極等,以及如晶圓支撐體或載體等置於腔室內的輔助材料。
如本文中所用,用語「形成氣體(forming gas)」係指氫與惰性氣體(通常為氮氣)的混合物,其係用於使表面上的氧化物還原成水。該等氫係稀釋於惰性氣體中以保持氫在低於約4.7體積%,因為在此比例以上的氫係可自燃的。
如上一般性說明的裝置與化合物的各式例示性實施態樣及根據本發明的方法,將參考以下實施例而更容易瞭解,此
等實施例係提供舉例說明且係非意欲以任何形式限制本發明。
以下實施例涉及鋁氮氧化物(AlON)及釔氧化物塗層,其係由麻州貝德福德安堤格里斯公司(Entegris Inc.,in Bedford MA)所製造之獨特的物理氣相沉積(PVD)塗層。此等塗層尤其為4至5微米厚且具有如表1所定義的化學組成。
實施例1
在此實施例中,塗覆於200毫米矽基材上的光阻劑係暴露於由氧與形成氣體(在氮中有3%氫)所形成的電漿,使用可商購自亞舍立科技公司(Axcelis Technologies)的Radiant Strip 220ES-IP電漿灰化工具。可商購的i線光阻劑(i-line photoresist)以約1.8微米的厚度沉積於矽基材上。O2/FG電漿化學物質係藉由使90%氧與10%形成氣體在每分鐘約3.5標準升(slm)下流到壓力為約1托、溫度為約270℃、及功率設定為2000瓦的電漿灰化工具
中而形成。
在光阻劑暴露於相應電漿15秒後,量測光阻劑移除速率(亦稱作灰化速率)及O2/FG電漿剝除製程(stripping process)的橫跨面晶圓均勻性(cross wafer uniformity)。比較以下二腔室擋板片配置的灰化速率:
(i)經最適化表面修整(surface finish)的陽極化鋁擋板,由此提供由陽極化擋板配置可獲得的最高的灰化速率。
(ii)經鋁氮氧化物塗覆的鋁擋板,其可商購自麻州01730貝德福德的安堤格里斯特用塗料公司(Entegris Specialty Coatings)。
除了表面修整或表面塗覆組成之外,該二擋板配置係在幾何形狀、尺寸及在電漿清潔系統中的安置上皆相同。
在各配置中對六片晶圓量測灰化速率與非均勻性,該六片晶圓係置於在25片晶圓試運行(25-wafer test run)的第1、5、10、15、20及25時隙(slot)中。藉由測定基於晶圓上49個測量點之光阻劑厚度的差異(灰化後(post-ash)減灰化前(pre-ash))且扣除光阻劑收縮的量(僅暴露於溫度下而造成之光阻劑厚度的變化)而計算灰化速率。由一獨立的試運行所量測而觀察到的光阻劑收縮為4600埃(Å),於該試運行中晶圓係經零電漿功率(zero plasma power)處理。藉由考量灰化速率測試的時間而以微米/分鐘(μm/min)的速率來表示無收縮之厚度的最終改變。
參考第1圖,自實施例1灰化速率測試所得的結果係
為本發明實施態樣而展現。注意到利用AlON-塗覆的鋁擋板片之配置係吻合地產生高於以最適化陽極化鋁擋板配置所獲得的灰化速率約20%之灰化速率。較高的灰化速率暗示,更多的活性氧、氫及氮物種之至少一者係通過擋板而能與光阻劑反應。較高的灰化速率是所欲的,因為其表示有較多反應性物種流到腔室,且因此可較快地清潔基材。
實施例2
在此實施例中,塗覆於200毫米矽基材上的光阻劑係暴露於各種電漿(i)O2/FG電漿,藉由使90%氧與10%形成氣體流至壓力為約1托、溫度為約270℃、及功率設定為2000瓦的電漿灰化工具中而形成;(ii)O2/FG+CF4電漿,藉由使90%氧與10%形成氣體、加上約15%的CF4流到壓力為約1托、溫度為約270℃、及功率設定為2000瓦的電漿灰化工具中而形成。
且在二個不同的電漿清潔系統中:(i)可商購自亞舍立科技公司的Radiant Strip 220ES-IP電漿灰化工具;(ii)可商購自亞舍立科技公司的Radiant Strip 220電漿灰化工具,以及用於四種不同的電漿工具擋板配置:(i)最適化的陽極化鋁擋板;(ii)標準陽極化鋁擋板;
(iii)經鋁氮氧化物塗覆的鋁擋板;(iv)經釔氧化物塗覆的鋁擋板。
除了表面修整或表面塗覆之外,該四擋板配置係在幾何形狀、尺寸及在電漿清潔系統中的安置上皆相同。
在各配置中對2片晶圓測定灰化速率與非均勻性。以如實施例1所說明的相同方法計算灰化速率。
參考第2圖,自實施例2灰化速率測試所得的結果係為本發明實施態樣而展現。結果指出AlON-塗覆之鋁擋板的配置係吻合地顯示最高的灰化速率,其量係高於以標準陽極化鋁擋板或釔氧化物-塗覆的鋁擋板之任一者所獲得的灰化速率約50%且高於以最適化的陽極化鋁擋板所獲得的灰化速率約20%。較高的灰化速率暗示,由於減少了與非灰化構件的交互作用,更多的活性氧、氫、氟及氮物種之至少一者係通過擋板,且因此有較多激發物種的流到灰化構件。此使得與光阻劑的反應增加。較高的灰化速率是所欲的,因為其可較快地清潔基材。
以下自1連續列舉至46之分段係提供本發明的各種態樣。在一實施態樣中,在第一分段(1)中,本發明提供:
1.一種用於降低一經電漿潤濕之表面系統構件之反應性的塗層,包含:釔氧化物,約具有以下組成:釔,含量為約60%至約80%;氧,含量為約20%至約40%;
及/或鋁氮氧化物,約具有以下組成:鋁,含量介於約25%至約60%之間;氧,含量介於約20%至約40%之間;氮,含量介於約20%至約40%之間;其中該塗層係施用至電漿潤濕系統的構件。
2.如分段1的塗層,其中該塗層係釔氧化物,包含:釔,含量為約60%至約80%;氧,含量為約20%至約40%。
3.如分段1的塗層,其中該塗層係鋁氮氧化物,包含:鋁,含量介於約25%至約60%之間;氧,含量介於約20%至約40%之間;氮,含量介於約20%至約40%之間。
4.如分段1至3的塗層,其中該電漿包含以下之一或多者:原子氧、分子氧、原子氫、分子氫、原子氮、分子氮、分子氬、原子氬、原子氟、及分子氟。
5.如分段1至4的塗層,其中該電漿包含以下之一或多者:含氟電漿、含氧電漿、含氫電漿及含氮電漿。
6.如分段1至5的塗層,其中該含氟電漿包含:CF4、CHF3、CF3H、C2F6、C4F8、SF6、NF3、F2及C4F8O。
7.如分段1至5的塗層,其中該含氧電漿包含:O2、O3、N2O、CO、CO2、C4F8O、H2O及H2O2。
8.如分段1至5的塗層,其中該含氫電漿包含:H2、CH4、NH3、N2H2、C2H2、H2O、H2O2、N2/H2、He/H2及Ar/H2。
9.如分段1至5的塗層,其中該含氮電漿包含N2、N2O、NH3、NF3、N2/H2及NO。
10.如分段1至9之任一分段的塗層,其中該塗層係藉由氣相沉積、濺鍍沉積、熱噴塗塗覆、溶膠-凝膠塗覆、大氣電漿沉積、磁控濺鍍、電子束沉積或脈衝雷射沉積而施用。
11.如分段1至10的塗層,其中該氣相沉積係電漿輔助化學氣相沉積(PECVD);物理氣相沉積(PVD);以及化學氣相沉積(CVD)。
12.如分段1至11的塗層,其中該塗層在介於約-150℃與約+600℃之間的溫度下為穩定的。
13.如分段1至12的塗層,其中該電漿系統係一順流式遠端電漿系統、一感應耦合電漿系統、一電容耦合電漿系統、一反應性離子蝕刻電漿系統、一大氣電漿系統、以及一離子蝕刻電漿系統。
14.如分段1至13的塗層,其中該塗層具有介於約3吉帕至約10吉帕之間的硬度。
15.如分段1至14的塗層,其中該塗層具有介於約100吉帕至約200吉帕之間的彈性係數(楊氏係數)。
16.如分段1至15之任一分段的塗層,其中該構件係由石英、鋁、陽極化鋁或其組合所製造。
17.一種增加電漿系統之效率的方法,包含將一表面塗層施用至不需電漿蝕刻的系統構件,該塗層減少該非蝕刻構件對一電漿流
的反應性,其中該表面塗層係:釔氧化物,約具有以下之組成:釔,含量為約60%至約80%;氧,含量為約20%至約40%;及/或鋁氮氧化物,約具有以下之組成:鋁,含量介於約25%至約60%之間;氧,含量介於約20%至約40%之間;氮,含量介於約20%至約40%之間;其中該塗層係施用至經電漿潤濕系統的構件。
18.如分段17的方法,其中該電漿包含以下之一或多者:原子氧、分子氧、原子氫、分子氫、原子氮、分子氮、分子氬、原子氬、原子氟及分子氟。
19.如分段17至18的方法,其中該電漿包含以下之一或多者:含氟電漿、含氧電漿、含氫電漿及含氮電漿。
20.如分段17至19的方法,其中該含氟電漿包含:CF4、CHF3、CF3H、C2F6、C4F8、SF6、NF3、F2及C4F8O。
21.如分段17至19的方法,其中該含氧電漿包含:O2、O3、N2O、CO、CO2、C4F8O、H2O及H2O2。
22.如分段17至19的方法,其中該含氫電漿包含:H2、CH4、NH3、N2H2、C2H2、H2O、H2O2、N2/H2、He/H2及Ar/H2。
23.如分段17至19的方法,其中該含氮電漿包含N2、N2O、NH3、
NF3、N2/H2及NO。
24.如分段17至23的方法,其中該塗層係藉由氣相沉積、濺鍍沉積、熱噴塗塗覆、溶膠-凝膠塗覆、大氣電漿沉積、磁控濺鍍、電子束沉積或脈衝雷射沉積而施用。
25.如分段17至24的方法,其中該氣相沉積係電漿輔助化學氣相沉積(PECVD);物理氣相沉積(PVD);以及化學氣相沉積(CVD)。
26.如分段17至25的方法,其中該塗層在介於約-150℃與約+600℃之間的溫度下為穩定的。
27.如分段17至26的方法,其中該塗層具有介於約3吉帕至約10吉帕之間的硬度。
28.如分段17至27的方法,其中該塗層具有介於約100吉帕至約200吉帕之間的彈性係數(楊氏係數)。
29.如分段17至28之任一分段的方法,其中該塗層係釔氧化物,包含:釔,含量為約60%至約80%;氧,含量為約20%至約40%。
30.如分段17至29之任一分段的方法,其中該塗層係鋁氮氧化物,包含:鋁,含量介於約25%至約60%之間;氧,含量介於約20%至約40%之間;氮,含量介於約20%至約40%之間。
31.如分段17至30之任一分段的方法,其中該構件係由石英、鋁、
陽極化鋁或其組合所製造。
32.一種增加電漿系統構件之生命週期的方法,包含將一表面塗層施用至系統構件,該塗層減少該構件對一電漿流的反應性,其中該表面塗層係:釔氧化物,約具有以下之組成:釔,含量為約60%至約80%;氧,含量為約20%至約40%;及/或鋁氮氧化物,約具有以下之組成:鋁,含量介於約25%至約60%之間;氧,含量介於約20%至約40%之間;氮,含量介於約20%至約40%之間;其中該塗層係施用至經電漿潤濕系統的構件。
33.如分段32的方法,其中該電漿包含以下之一或多者:原子氧、分子氧、原子氫、分子氫、原子氮、分子氮、分子氬、原子氬、原子氟及分子氟。
34.如分段32至33的方法,其中該電漿包含以下之一或多者:含氟電漿、含氧電漿、含氫電漿及含氮電漿。
35.如分段32至34的方法,其中該含氟電漿包含:CF4、CHF3、CF3H、C2F6、C4F8、SF6、NF3、F2及C4F8O。
36.如分段32至34的方法,其中該含氧電漿包含:O2、O3、N2O、CO、CO2、C4F8O、H2O及H2O2。
37.如分段32至34的方法,其中該含氫電漿包含:H2、CH4、NH3、N2H2、C2H2、H2O、H2O2、N2/H2、He/H2及Ar/H2。
38.如分段32至34的方法,其中該含氮電漿包含N2、N2O、NH3、NF3、N2/H2及NO。
39.如分段32至38的方法,該塗層係藉由氣相沉積、濺鍍沉積、熱噴塗塗覆、溶膠-凝膠塗覆、大氣電漿沉積、磁控濺鍍、電子束沉積或脈衝雷射沉積而施用。
40.如分段32至39的方法,其中該氣相沉積係電漿輔助化學氣相沉積(PECVD);物理氣相沉積(PVD);以及化學氣相沉積(CVD)。
41.如分段32至40的方法,其中該塗層在介於約-150℃與約+600℃之間的溫度下為穩定的。
42.如分段32至41的表面塗層,其中該塗層具有介於約3吉帕至約10吉帕的硬度。
43.如分段32至42的表面塗層,其中該塗層具有介於約100吉帕至約200吉帕之間的彈性係數(楊氏係數)。
44.如分段32至43之任一分段的方法,其中該塗層係釔氧化物,包含:釔,含量為約60%至約80%;氧,含量為約20%至約40%。
45.如分段32至44之任一分段的方法,其中該塗層係鋁氮氧化物,包含:鋁,含量介於約25%至約60%之間;
氧,含量介於約20%至約40%之間;氮,含量介於約20%至約40%之間。
46.如分段32至45之任一分段的方法,其中該構件係由石英、鋁、陽極化鋁或其組合所製造。
為詮釋有關本發明實施態樣的請求項之目的,除非各請求項記載特定用語「手段用以(means for)」或「步驟用以(step for)」,否則其明顯意欲不構成美國專利法35 U.S.C.112(f)的要件。
雖然本發明已連同以上概述之各種例示性實施態樣而說明,然而對本領域中至少具通常知識者而言,不論習知或可能為預料之外的各種替代方案、修飾、變化、改良及/或實質均等物可變得明顯。據此,如前述根據本發明之例示性實施態樣係意欲為說明性的而非限制。可在不背離本發明精神與範圍的情形下產生各種變化。因此,本發明意欲涵蓋所有習知或後來開發的此等例示性實施態樣的替代方案、變化、改良及/或實質均等物。
Claims (8)
- 一種經施用塗層的電漿潤濕(plasma wetted)系統的構件,其中以EDAX測量,該塗層包含:釔氧化物(yttria),約具有以下組成:釔,含量為約60原子%至約80原子%;氧,含量為約20原子%至約40原子%;及鋁氮氧化物(aluminum oxynitride),約具有以下組成:鋁,含量介於約25原子%至約60原子%之間;氧,含量介於約20原子%至約40原子%之間;氮,含量介於約20原子%至約40原子%之間。
- 如請求項1的經施用塗層的電漿潤濕系統的構件,其中該塗層在介於約-150℃與約+600℃之間的溫度下為穩定的。
- 如請求項1的經施用塗層的電漿潤濕系統的構件,其中該電漿潤濕系統係順流式遠端電漿系統(downstream,remote plasma system)、感應耦合電漿系統、電容耦合電漿系統、反應性離子蝕刻電漿系統、大氣電漿系統、或離子蝕刻電漿系統。
- 如請求項1至3之任一項的經施用塗層的電漿潤濕系統的構件,其中該塗層具有介於約3吉帕(GPa)至約10吉帕之間的硬度。
- 如請求項1至3之任一項的經施用塗層的電漿潤濕系統的構件,其中該塗層具有介於約100吉帕至約200吉帕之間的彈性係 數(楊氏係數)。
- 如請求項1至3之任一項的經施用塗層的電漿潤濕系統的構件,其中該構件係由石英、鋁、陽極化鋁(anodized aluminum)或其組合所製造。
- 如請求項1至3之任一項的經施用塗層的電漿潤濕系統的構件,其中該塗層增加活性電漿物種流到該電漿潤濕系統。
- 一種塗層之用途,其係用以增加活性電漿物種流到電漿潤濕系統,其中以EDAX測量,該塗層包含:釔氧化物,約具有以下組成:釔,含量為約60原子%至約80原子%;氧,含量為約20原子%至約40原子%;及鋁氮氧化物,約具有以下組成:鋁,含量介於約25原子%至約60原子%之間;氧,含量介於約20原子%至約40原子%之間;氮,含量介於約20原子%至約40原子%之間。
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EP3071726B1 (en) | 2022-12-28 |
JP2016540889A (ja) | 2016-12-28 |
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