JP2006186306A - ガス拡散プレートおよびその製造方法 - Google Patents
ガス拡散プレートおよびその製造方法 Download PDFInfo
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- JP2006186306A JP2006186306A JP2005242206A JP2005242206A JP2006186306A JP 2006186306 A JP2006186306 A JP 2006186306A JP 2005242206 A JP2005242206 A JP 2005242206A JP 2005242206 A JP2005242206 A JP 2005242206A JP 2006186306 A JP2006186306 A JP 2006186306A
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- 238000009792 diffusion process Methods 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims abstract description 58
- 239000000463 material Substances 0.000 claims abstract description 50
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 45
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 9
- 238000010304 firing Methods 0.000 claims description 8
- 239000007787 solid Substances 0.000 claims description 8
- 238000001816 cooling Methods 0.000 claims description 5
- 238000007751 thermal spraying Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 239000002245 particle Substances 0.000 abstract description 25
- 239000004065 semiconductor Substances 0.000 abstract description 9
- 229910052736 halogen Inorganic materials 0.000 abstract description 4
- 150000002367 halogens Chemical class 0.000 abstract description 4
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 81
- 230000000052 comparative effect Effects 0.000 description 18
- 238000007750 plasma spraying Methods 0.000 description 7
- 238000005507 spraying Methods 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 238000005553 drilling Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 150000002366 halogen compounds Chemical class 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
- C23C4/11—Oxides
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
- C25D1/08—Perforated or foraminous objects, e.g. sieves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12361—All metal or with adjacent metals having aperture or cut
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12736—Al-base component
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Coating By Spraying Or Casting (AREA)
- Industrial Gases (AREA)
Abstract
【解決手段】本ガス拡散プレートは、1個あるいは多数の円形透孔が設けられたアルミナ基材あるいはアルミニウム基材と、円形透孔に焼嵌され、ガス噴出孔が設けられたイットリア製円筒パイプからなる。また、その製造方法。
【選択図】 図2
Description
図4に示すように、本発明のシャワープレートを半導体用エッチャーに組み込み、半導体ウェーハをシャワープレートの下方にセットし、CF4+He+Arのプラズマガスをシャワープレートより導入し、放電させ、ウェーハ上のパーティクルをカウントした。
実施例2:図2に示すように実施例1のアルミナの腐食性ガスに曝される部分にイットリア溶射を施したシャワープレート
比較例1:アルミナにガス噴出孔を開けたシャワープレート
比較例2:比較例1のアルミナの腐食性ガスに曝される部分にイットリア溶射したシャワープレート(ガス噴出孔内部は溶射できない)
比較例3:アルミナの透孔にイットリア製円筒パイプを接着剤で接合したシャワープレート
上記実施例1におけるアルミナ基材に替えてアルミニウム基材を用いて実施例3とし、上記比較例2のアルミナ基材をアルミニウム基材に替え、ガス噴出孔がアルミニウムである比較例4とし、上記比較例3のアルミナ基材をアルミニウム基材に替えて比較例5とし、試験1と同様にウェーハ上のパーティクルをカウントした。
本発明のアルミニウム基材を備えたシャワープレートを用い、試験1と同様にパーティクルをカウントした。
2 円形透孔
3 アルミナ基材
4 ガス噴出孔
5 イットリア製円筒パイプ
Claims (8)
- 1個あるいは多数の円形透孔が設けられたアルミナ基材あるいはアルミニウム基材と、前記円形透孔に焼嵌され、1個あるいは多数のガス噴出孔が設けられたイットリア製円筒体からなることを特徴とするガス拡散プレート。
- 前記アルミナ基材あるいはアルミニウム基材の腐食性ガスに曝される部分に、イットリア溶射膜を設けたことを特徴とする請求項1に記載のガス拡散プレート。
- 1個あるいは多数の円形透孔が設けられたアルミナ基材の焼成前の被焼成体と、1個あるいは多数のガス噴出孔が設けられたイットリア製円筒体の焼成体を用意し、前記透孔に前記円筒体を挿入し、この両者を同時に焼成し、前記円筒体を透孔に焼嵌することを特徴とするガス拡散プレートの製造方法。
- 1個あるいは多数の円形透孔が設けられたアルミナ基材の焼成前の被焼成体と、イットリア製中実円柱状焼成体とを用意し、前記円形透孔に前記焼成体を挿入し、この両者を同時に焼成することによって前記柱状焼成体を前記円形透孔に焼嵌し、前記柱状焼成体に孔明け加工を行って1個あるいは多数のガス噴出孔を設けることを特徴とするガス拡散プレートの製造方法。
- 前記アルミニウム基材の腐食性ガスに曝される部分にイットリア溶射を施すことを特徴とする請求項3または4に記載のガス拡散プレートの製造方法。
- 1個あるいは多数の円形透孔が設けられたアルミニウム基材と、1個あるいは多数のガス噴出孔が設けられたイットリア製円筒体の焼成体を用意し、前記アルミニウム基材を加熱した状態で、前記透孔に前記円筒体を挿入し、冷却することにより、前記円筒体を前記円形透孔に焼嵌することを特徴とするガス拡散プレートの製造方法。
- 1個あるいは多数の円形透孔が設けられたアルミニウム基材と、イットリア製中実円柱状焼成体とを用意し、前記基材を加熱した状態で、前記円形透孔に前記焼成体を挿入し、冷却することにより、前記柱状焼成体を前記円形透孔に焼嵌し、前記柱状焼成体に孔明け加工を行って1個あるいは多数のガス噴出孔を設けたことを特徴とするガス拡散プレートの製造方法。
- 前記アルミニウム基材の腐食性ガスに曝される部分にイットリア溶射を施すことを特徴とする請求項6または7に記載のガス拡散プレートの製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005242206A JP2006186306A (ja) | 2004-09-30 | 2005-08-24 | ガス拡散プレートおよびその製造方法 |
KR1020050090653A KR100651158B1 (ko) | 2004-09-30 | 2005-09-28 | 가스확산 플레이트 및 그 제조방법 |
TW094134417A TWI284368B (en) | 2004-09-30 | 2005-09-30 | Gas diffusion plate and manufacturing method for the same |
US11/239,678 US20060073354A1 (en) | 2004-09-30 | 2005-09-30 | Gas diffusion plate and manufacturing method for the same |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2004288041 | 2004-09-30 | ||
JP2004349946 | 2004-12-02 | ||
JP2005242206A JP2006186306A (ja) | 2004-09-30 | 2005-08-24 | ガス拡散プレートおよびその製造方法 |
Publications (1)
Publication Number | Publication Date |
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JP2006186306A true JP2006186306A (ja) | 2006-07-13 |
Family
ID=36125911
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005242206A Pending JP2006186306A (ja) | 2004-09-30 | 2005-08-24 | ガス拡散プレートおよびその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20060073354A1 (ja) |
JP (1) | JP2006186306A (ja) |
KR (1) | KR100651158B1 (ja) |
TW (1) | TWI284368B (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013247150A (ja) * | 2012-05-23 | 2013-12-09 | Ulvac Japan Ltd | プラズマ処理装置 |
JP2014120764A (ja) * | 2012-12-17 | 2014-06-30 | Gloval Material Science Co Ltd | ドライエッチング反応室チャンバの上部電極およびその製造方法 |
CN102064082B (zh) * | 2009-11-13 | 2014-11-05 | 世界中心科技股份有限公司 | 扩散板结构及其制作方法 |
JP2017022356A (ja) * | 2015-07-10 | 2017-01-26 | 東京エレクトロン株式会社 | プラズマ処理装置及びシャワーヘッド |
JP2020080412A (ja) * | 2014-04-25 | 2020-05-28 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 高温アプリケーション用プラズマ耐食性薄膜コーティング |
US11164726B2 (en) | 2019-02-08 | 2021-11-02 | Toshiba Memory Corporation | Gas supply member, plasma processing apparatus, and method for forming coating film |
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US20080264564A1 (en) * | 2007-04-27 | 2008-10-30 | Applied Materials, Inc. | Method of reducing the erosion rate of semiconductor processing apparatus exposed to halogen-containing plasmas |
US20080213496A1 (en) * | 2002-02-14 | 2008-09-04 | Applied Materials, Inc. | Method of coating semiconductor processing apparatus with protective yttrium-containing coatings |
JP2008047869A (ja) * | 2006-06-13 | 2008-02-28 | Hokuriku Seikei Kogyo Kk | シャワープレート及びその製造方法、並びにそのシャワープレートを用いたプラズマ処理装置、プラズマ処理方法及び電子装置の製造方法 |
JP5463536B2 (ja) * | 2006-07-20 | 2014-04-09 | 北陸成型工業株式会社 | シャワープレート及びその製造方法、並びにそのシャワープレートを用いたプラズマ処理装置、プラズマ処理方法及び電子装置の製造方法 |
JP5010234B2 (ja) * | 2006-10-23 | 2012-08-29 | 北陸成型工業株式会社 | ガス放出孔部材を一体焼結したシャワープレートおよびその製造方法 |
US7919722B2 (en) * | 2006-10-30 | 2011-04-05 | Applied Materials, Inc. | Method for fabricating plasma reactor parts |
US10622194B2 (en) | 2007-04-27 | 2020-04-14 | Applied Materials, Inc. | Bulk sintered solid solution ceramic which exhibits fracture toughness and halogen plasma resistance |
US7696117B2 (en) * | 2007-04-27 | 2010-04-13 | Applied Materials, Inc. | Method and apparatus which reduce the erosion rate of surfaces exposed to halogen-containing plasmas |
US10242888B2 (en) | 2007-04-27 | 2019-03-26 | Applied Materials, Inc. | Semiconductor processing apparatus with a ceramic-comprising surface which exhibits fracture toughness and halogen plasma resistance |
US8367227B2 (en) * | 2007-08-02 | 2013-02-05 | Applied Materials, Inc. | Plasma-resistant ceramics with controlled electrical resistivity |
US9583369B2 (en) | 2013-07-20 | 2017-02-28 | Applied Materials, Inc. | Ion assisted deposition for rare-earth oxide based coatings on lids and nozzles |
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US11326253B2 (en) | 2016-04-27 | 2022-05-10 | Applied Materials, Inc. | Atomic layer deposition of protective coatings for semiconductor process chamber components |
US9850573B1 (en) | 2016-06-23 | 2017-12-26 | Applied Materials, Inc. | Non-line of sight deposition of erbium based plasma resistant ceramic coating |
US20180016678A1 (en) | 2016-07-15 | 2018-01-18 | Applied Materials, Inc. | Multi-layer coating with diffusion barrier layer and erosion resistant layer |
US10186400B2 (en) | 2017-01-20 | 2019-01-22 | Applied Materials, Inc. | Multi-layer plasma resistant coating by atomic layer deposition |
US10755900B2 (en) | 2017-05-10 | 2020-08-25 | Applied Materials, Inc. | Multi-layer plasma erosion protection for chamber components |
US11279656B2 (en) | 2017-10-27 | 2022-03-22 | Applied Materials, Inc. | Nanopowders, nanoceramic materials and methods of making and use thereof |
US10443126B1 (en) | 2018-04-06 | 2019-10-15 | Applied Materials, Inc. | Zone-controlled rare-earth oxide ALD and CVD coatings |
US11667575B2 (en) | 2018-07-18 | 2023-06-06 | Applied Materials, Inc. | Erosion resistant metal oxide coatings |
US11180847B2 (en) | 2018-12-06 | 2021-11-23 | Applied Materials, Inc. | Atomic layer deposition coatings for high temperature ceramic components |
CN113383405B (zh) * | 2019-02-12 | 2024-08-30 | 应用材料公司 | 用于制造腔室部件的方法 |
US10858741B2 (en) | 2019-03-11 | 2020-12-08 | Applied Materials, Inc. | Plasma resistant multi-layer architecture for high aspect ratio parts |
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JP2003166043A (ja) * | 2001-12-03 | 2003-06-13 | Toshiba Ceramics Co Ltd | 耐プラズマ性部材の製造方法 |
JP2004247361A (ja) * | 2003-02-10 | 2004-09-02 | Ngk Insulators Ltd | 半導体製造装置用部材とその製造方法 |
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US6780787B2 (en) * | 2002-03-21 | 2004-08-24 | Lam Research Corporation | Low contamination components for semiconductor processing apparatus and methods for making components |
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2005
- 2005-08-24 JP JP2005242206A patent/JP2006186306A/ja active Pending
- 2005-09-28 KR KR1020050090653A patent/KR100651158B1/ko not_active IP Right Cessation
- 2005-09-30 TW TW094134417A patent/TWI284368B/zh not_active IP Right Cessation
- 2005-09-30 US US11/239,678 patent/US20060073354A1/en not_active Abandoned
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JP2003166043A (ja) * | 2001-12-03 | 2003-06-13 | Toshiba Ceramics Co Ltd | 耐プラズマ性部材の製造方法 |
JP2004247361A (ja) * | 2003-02-10 | 2004-09-02 | Ngk Insulators Ltd | 半導体製造装置用部材とその製造方法 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102064082B (zh) * | 2009-11-13 | 2014-11-05 | 世界中心科技股份有限公司 | 扩散板结构及其制作方法 |
JP2013247150A (ja) * | 2012-05-23 | 2013-12-09 | Ulvac Japan Ltd | プラズマ処理装置 |
JP2014120764A (ja) * | 2012-12-17 | 2014-06-30 | Gloval Material Science Co Ltd | ドライエッチング反応室チャンバの上部電極およびその製造方法 |
JP2020080412A (ja) * | 2014-04-25 | 2020-05-28 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 高温アプリケーション用プラズマ耐食性薄膜コーティング |
JP7175289B2 (ja) | 2014-04-25 | 2022-11-18 | アプライド マテリアルズ インコーポレイテッド | 高温アプリケーション用プラズマ耐食性薄膜コーティング |
JP2017022356A (ja) * | 2015-07-10 | 2017-01-26 | 東京エレクトロン株式会社 | プラズマ処理装置及びシャワーヘッド |
US11164726B2 (en) | 2019-02-08 | 2021-11-02 | Toshiba Memory Corporation | Gas supply member, plasma processing apparatus, and method for forming coating film |
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KR20060051769A (ko) | 2006-05-19 |
TWI284368B (en) | 2007-07-21 |
TW200629401A (en) | 2006-08-16 |
KR100651158B1 (ko) | 2006-11-29 |
US20060073354A1 (en) | 2006-04-06 |
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