KR100968990B1 - 플라즈마 처리 장치 및 플라즈마 처리 방법 - Google Patents
플라즈마 처리 장치 및 플라즈마 처리 방법 Download PDFInfo
- Publication number
- KR100968990B1 KR100968990B1 KR1020060130066A KR20060130066A KR100968990B1 KR 100968990 B1 KR100968990 B1 KR 100968990B1 KR 1020060130066 A KR1020060130066 A KR 1020060130066A KR 20060130066 A KR20060130066 A KR 20060130066A KR 100968990 B1 KR100968990 B1 KR 100968990B1
- Authority
- KR
- South Korea
- Prior art keywords
- gas
- plasma
- processing
- injection
- processing apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32229—Waveguides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006010131A JP5068458B2 (ja) | 2006-01-18 | 2006-01-18 | プラズマ処理装置およびプラズマ処理方法 |
| JPJP-P-2006-00010131 | 2006-01-18 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020090018999A Division KR20090033852A (ko) | 2006-01-18 | 2009-03-05 | 플라즈마 처리 장치 및 플라즈마 처리 방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20070076415A KR20070076415A (ko) | 2007-07-24 |
| KR100968990B1 true KR100968990B1 (ko) | 2010-07-09 |
Family
ID=38262196
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020060130066A Expired - Fee Related KR100968990B1 (ko) | 2006-01-18 | 2006-12-19 | 플라즈마 처리 장치 및 플라즈마 처리 방법 |
| KR1020090018999A Withdrawn KR20090033852A (ko) | 2006-01-18 | 2009-03-05 | 플라즈마 처리 장치 및 플라즈마 처리 방법 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020090018999A Withdrawn KR20090033852A (ko) | 2006-01-18 | 2009-03-05 | 플라즈마 처리 장치 및 플라즈마 처리 방법 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7655111B2 (enExample) |
| JP (1) | JP5068458B2 (enExample) |
| KR (2) | KR100968990B1 (enExample) |
| CN (1) | CN100530530C (enExample) |
| TW (1) | TW200733201A (enExample) |
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| CN119101889B (zh) * | 2024-11-05 | 2025-01-24 | 碳方程半导体设备制造(山西)有限公司 | 一种微波等离子体化学气相沉积装置 |
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| JP2001135627A (ja) * | 1999-11-09 | 2001-05-18 | Sharp Corp | プラズマプロセス装置。 |
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| JPH08250477A (ja) * | 1995-03-14 | 1996-09-27 | Sumitomo Metal Ind Ltd | プラズマ装置 |
| US5645644A (en) * | 1995-10-20 | 1997-07-08 | Sumitomo Metal Industries, Ltd. | Plasma processing apparatus |
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| JP4273932B2 (ja) * | 2003-11-07 | 2009-06-03 | 株式会社島津製作所 | 表面波励起プラズマcvd装置 |
| JP4659377B2 (ja) * | 2004-03-19 | 2011-03-30 | 株式会社 液晶先端技術開発センター | 絶縁膜の形成方法 |
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2006
- 2006-01-18 JP JP2006010131A patent/JP5068458B2/ja not_active Expired - Fee Related
- 2006-10-25 CN CNB2006101375490A patent/CN100530530C/zh not_active Expired - Fee Related
- 2006-12-19 KR KR1020060130066A patent/KR100968990B1/ko not_active Expired - Fee Related
-
2007
- 2007-01-17 US US11/653,895 patent/US7655111B2/en not_active Expired - Fee Related
- 2007-01-18 TW TW096101934A patent/TW200733201A/zh unknown
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2009
- 2009-03-05 KR KR1020090018999A patent/KR20090033852A/ko not_active Withdrawn
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2001053065A (ja) * | 1999-08-13 | 2001-02-23 | Nec Kyushu Ltd | プラズマ処理装置 |
| JP2001135627A (ja) * | 1999-11-09 | 2001-05-18 | Sharp Corp | プラズマプロセス装置。 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2007194355A (ja) | 2007-08-02 |
| TW200733201A (en) | 2007-09-01 |
| KR20090033852A (ko) | 2009-04-06 |
| KR20070076415A (ko) | 2007-07-24 |
| US20070163996A1 (en) | 2007-07-19 |
| JP5068458B2 (ja) | 2012-11-07 |
| US7655111B2 (en) | 2010-02-02 |
| CN100530530C (zh) | 2009-08-19 |
| CN101005007A (zh) | 2007-07-25 |
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