JP2002511905A - プラズマ処理装置のガス噴射システム - Google Patents
プラズマ処理装置のガス噴射システムInfo
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- JP2002511905A JP2002511905A JP50591599A JP50591599A JP2002511905A JP 2002511905 A JP2002511905 A JP 2002511905A JP 50591599 A JP50591599 A JP 50591599A JP 50591599 A JP50591599 A JP 50591599A JP 2002511905 A JP2002511905 A JP 2002511905A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45572—Cooled nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Crystallography & Structural Chemistry (AREA)
- Analytical Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1. プラズマ処理システムであって、 プラズマ処理チャンバと、 前記処理チャンバ内において基板を支持する基板支持体と、 前記基板支持体に対向する内面を有すると共に処理チャンバの壁を形成する誘 電部材と、 前記処理チャンバ内で延びている末端部を有すると共に側壁に1又は複数のオ リフィスを有する少なくとも1つの細長い噴射器チューブを含み、前記処理チャ ンバ内にプロセスガスを供給するガス供給部と、 基板を処理するためにプロセスガスをプラズマ状態に活性化するようにRFエ ネルギを前記誘電部材を介して前記処理チャンバ内に誘導的に結合するRFエネ ルギソースと、 を備えることを特徴とするプラズマ処理システム。 2. 電場が、プロセスガスの活性化に応じて前記噴射器チューブの周りに形成 され、該電場は、前記噴射器チューブの末端部に集中し、前記オリフィスは、集 中した電場から離れた位置に設けられていることを特徴とする請求項1に記載の プラズマ処理システム。 3. 高密度プラズマ化学気相成長システム、又は、高密度プラズマエッチング システムであることを特徴とする請求項1に記載のプラズマ処理システム。 4. 前記RFエネルギ源は、RFアンテナを含み、前記噴射器チューブは、プ ロセスガスを前記処理チャンバ内の一次プラズマ発 生ゾーンに向かって噴射することを特徴とする請求項1に記載のプラズマ処理シ ステム。 5. 1又は複数の前記オリフィスが、前記噴射器チューブの長手軸に沿って、 互いに距離を隔てて配置されており、各オリフィスは、その長さに沿って一様な 又は一様でない断面を有することを特徴とする請求項1に記載のプラズマ処理シ ステム。 6. 複数の前記噴射器チューブが、該噴射器チューブが基板の周辺部のゾーン 内に延びないように、該基板の周辺部の周りに分布していることを特徴とする請 求項1に記載のプラズマ処理システム。 7. 前記噴射器チューブは、プロセスガスを亜音速、音速、又は超音速で噴射 することを特徴とする請求項1に記載のプラズマ処理システム。 8. 前記噴射器チューブは、その長手軸に沿って複数の前記オリフィスを有す るシャワーヘッドノズルを含むことを特徴とする請求項1に記載のプラズマ処理 システム。 9. 前記シャワーヘッドノズルは、チャンバの中央領域内に延びていることを 特徴とする請求項8に記載のプラズマ処理システム。 10. 前記ノズルは、接地又は給電される内部導電層と、該内部層を取り囲ん だ外部誘電層とを有することを特徴とする請求項8に記載の方法。 11. 前記噴射器チューブは、閉鎖された末端部を有し、前記1又は複数のオ リフィスは、基板の露出面に平行な面に対して鋭角にプロセスガスを噴射するこ とを特徴とする請求項1に記載のプラズマ処理システム。 12. 前記噴射器チューブは、直線状に延びると共に閉鎖された末端部を有し 、前記プロセスガスは、前記噴射器チューブの長手軸に対して平行ではない方向 に前記噴射器チューブから噴射され、前記1又は複数のオリフィスは、前記閉鎖 された末端部から離れた位置に配置されていることを特徴とする請求項1に記載 のプラズマ処理システム。 13. 前記噴射器チューブは、前記誘電部材によって支持されたシャワーヘッ ドノズルを含み、前記シャワーヘッドノズルは、テーパ付き末端部、湾曲した末 端部又は平坦な末端部に、少なくとも1つの開口を有することを特徴とする請求 項1に記載のプラズマ処理システム。 14. 前記RFエネルギソースは、RFアンテナを含み、前記シャワーヘッド ノズルは、前記プロセスガスを前記処理チャンバ内の一次プラズマ発生ゾーンに 向かって噴射することを特徴とする請求項8に記載のプラズマ処理システム。 15. 前記シャワーヘッドノズルは、前記プロセスガスを亜音速、音速、又は 超音速で噴射することを特徴とする請求項8に記載のプラズマ処理システム。 16. 前記噴射器チューブは、テーパ付き末端部、湾曲した末端部又は平坦な 末端部を有することを特徴とする請求項1に記載のプラズマ処理システム。 17. 基板をプラズマ処理する方法であって、 処理チャンバの壁を形成している誘電部材の内面が基板支持体に対向した前記 処理チャンバ内において前記基板支持体上に基板を載置し、 前記処理チャンバ内で延びている末端部を有すると共に側壁に1又は複数のオ リフィスを有する少なくとも1つの細長い噴射器チューブを含むガス供給部から 前記処理チャンバ内にプロセスガスを供給し、 RFエネルギソースによって発生されたRFエネルギを誘電部材を介して誘導 的に処理チャンバ内に結合することにより、プロセスガスをプラズマ状態に活性 化し、該プラズマガスを基板の露出面と反応するプラズマ相とする、 ことを特徴とする基板をプラズマ処理する方法。 18. 電場が、プロセスガスの活性化に応じて前記噴射器チューブの周りに形 成され、該電場は、前記噴射器チューブの末端部に集中し、前記オリフィスは、 集中した電場から離れた位置に配置されていることを特徴とする請求項17に記 載の方法。 19. 前記RFエネルギ源は、RFアンテナを含み、前記噴射器チューブは、 前記プロセスガスを前記処理チャンバ内の一次プラズマ発生ゾーンに向かって噴 射することを特徴とする請求項17に記載の方法。 20. 前記1又は複数のオリフィスは、前記噴射器チューブの長手軸に沿って 、互いに距離を隔てて配置されており、各オリフィスは、その長さに沿って一様 な又は一様でない断面を有することを特徴とする請求項17に記載の方法。 21. 複数の前記噴射器チューブは、該噴射器チューブが基板の周辺部のゾー ン内に延びないように、該基板の周辺部の周りに分布しており、前記噴射器チュ ーブは、前記プロセスガスをそのゾーン内に噴射することを特徴とする請求項1 7に記載の方法。 22. 前記噴射器チューブは、前記プロセスガスを亜音速、音速、又は超音速 で噴射することを特徴とする請求項17に記載の方法。 23. 個々の基板は、各基板の上に膜を蒸着し又はエッチングするように基板 をプラズマガスと接触させることにより、前記処理チャンバ内で連続的に処理さ れることを特徴とする請求項17に記載の方法。 24. 前記噴射器チューブは、その長手軸に沿ってオリフィスが互いに隔てて 配置されたシャワーヘッドノズルを含み、該オリフィスは、前記プロセスガスを 複数の異なった方向に噴射することを特徴とする請求項7に記載の方法。 25. 前記シャワーヘッドノズルは、前記チャンバの中央部内に延びており、 前記オリフィスは、基板の露出面と前記誘電部材の内面との間のゾーンにプロセ スガスを噴射することを特徴とする請求 項24に記載の方法。 26. 前記シャワーヘッドノズルは、外部誘電層と内部導電層とを含み、前記 外部誘電層は、前記内部導電層を取り囲んでおり、前記内部導電層は、基板の処 理中に電気的に接地又は給電されることを特徴とする請求項24に記載の方法。 27. 前記噴射器チューブは、直線状に延びると共に閉鎖された末端部を含み 、前記プロセスガスは、前記噴射器チューブの長手軸に平行ではない方向に該噴 射器チューブから噴射され、前記1又は複数のオリフィスは、前記閉鎖された末 端部から離れた位置に配置されていることを特徴とする請求項17に記載の方法 。 28. 前記噴射器チューブは、前記誘電部材によって支持されたシャワーヘッ ドノズルを含み、前記シャワーヘッドノズルは、テーパ付き末端部、湾曲した末 端部又は平坦な末端部に、少なくとも1つの開口を有することを特徴とする請求 項17に記載の方法。 29. 前記噴射器チューブは、テーパ付き末端部、湾曲した末端部又は平坦な 末端部を有することを特徴とする請求項17に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/885,353 US6013155A (en) | 1996-06-28 | 1997-06-30 | Gas injection system for plasma processing |
US08/885,353 | 1997-06-30 | ||
PCT/US1998/013777 WO1999000532A1 (en) | 1997-06-30 | 1998-06-30 | Gas injection system for plasma processing apparatus |
Publications (3)
Publication Number | Publication Date |
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JP2002511905A true JP2002511905A (ja) | 2002-04-16 |
JP2002511905A5 JP2002511905A5 (ja) | 2005-12-22 |
JP4153048B2 JP4153048B2 (ja) | 2008-09-17 |
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ID=25386718
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP50591599A Expired - Lifetime JP4153048B2 (ja) | 1997-06-30 | 1998-06-30 | プラズマ処理装置のガス噴射システム |
Country Status (7)
Country | Link |
---|---|
US (1) | US6013155A (ja) |
EP (1) | EP1017876B1 (ja) |
JP (1) | JP4153048B2 (ja) |
AT (1) | ATE291104T1 (ja) |
DE (1) | DE69829390T2 (ja) |
TW (1) | TW514672B (ja) |
WO (1) | WO1999000532A1 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003059900A (ja) * | 2001-08-15 | 2003-02-28 | Sony Corp | プラズマ処理装置及びプラズマ処理方法 |
JP2007277723A (ja) * | 2006-04-05 | 2007-10-25 | Genus Inc | 反応炉に均一な気体運搬を行う方法および装置 |
JP2010532565A (ja) * | 2007-06-29 | 2010-10-07 | ラム リサーチ コーポレーション | 単一の平面アンテナを備えた誘導結合二重ゾーン処理チャンバ |
JP2015082546A (ja) * | 2013-10-22 | 2015-04-27 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP2015094011A (ja) * | 2013-11-13 | 2015-05-18 | 東レエンジニアリング株式会社 | 薄膜形成装置 |
JP2019067503A (ja) * | 2017-09-28 | 2019-04-25 | 東京エレクトロン株式会社 | プラズマ処理装置 |
Families Citing this family (152)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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1997
- 1997-06-30 US US08/885,353 patent/US6013155A/en not_active Expired - Lifetime
-
1998
- 1998-06-30 WO PCT/US1998/013777 patent/WO1999000532A1/en active IP Right Grant
- 1998-06-30 JP JP50591599A patent/JP4153048B2/ja not_active Expired - Lifetime
- 1998-06-30 EP EP98931773A patent/EP1017876B1/en not_active Expired - Lifetime
- 1998-06-30 DE DE69829390T patent/DE69829390T2/de not_active Expired - Lifetime
- 1998-06-30 AT AT98931773T patent/ATE291104T1/de not_active IP Right Cessation
- 1998-07-28 TW TW087110568A patent/TW514672B/zh not_active IP Right Cessation
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2003059900A (ja) * | 2001-08-15 | 2003-02-28 | Sony Corp | プラズマ処理装置及びプラズマ処理方法 |
JP4608827B2 (ja) * | 2001-08-15 | 2011-01-12 | ソニー株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP2007277723A (ja) * | 2006-04-05 | 2007-10-25 | Genus Inc | 反応炉に均一な気体運搬を行う方法および装置 |
JP2010532565A (ja) * | 2007-06-29 | 2010-10-07 | ラム リサーチ コーポレーション | 単一の平面アンテナを備えた誘導結合二重ゾーン処理チャンバ |
JP2015082546A (ja) * | 2013-10-22 | 2015-04-27 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP2015094011A (ja) * | 2013-11-13 | 2015-05-18 | 東レエンジニアリング株式会社 | 薄膜形成装置 |
JP2019067503A (ja) * | 2017-09-28 | 2019-04-25 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP7002268B2 (ja) | 2017-09-28 | 2022-01-20 | 東京エレクトロン株式会社 | プラズマ処理装置 |
Also Published As
Publication number | Publication date |
---|---|
EP1017876A1 (en) | 2000-07-12 |
US6013155A (en) | 2000-01-11 |
TW514672B (en) | 2002-12-21 |
ATE291104T1 (de) | 2005-04-15 |
WO1999000532A1 (en) | 1999-01-07 |
DE69829390D1 (de) | 2005-04-21 |
DE69829390T2 (de) | 2006-04-13 |
EP1017876B1 (en) | 2005-03-16 |
JP4153048B2 (ja) | 2008-09-17 |
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