JP2015082546A - プラズマ処理装置及びプラズマ処理方法 - Google Patents
プラズマ処理装置及びプラズマ処理方法 Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
Abstract
【解決手段】プラズマ処理装置1は、ウェハWを収容する処理容器10と、処理容器10の底面に設けられ、ウェハWを載置する載置台20と、処理容器10の天井面中央部に設けられ、当該処理容器10の内部に第1の処理ガスT1を供給する第1の処理ガス供給管60と、処理容器10の側面に設けられ、当該処理容器10の内部に第2の処理ガスT2を供給する第2の処理ガス供給管70と、処理容器10の側面であって、第2の処理ガス供給管70の上方に設けられ、処理容器10の内部に下方に向かう整流ガスRを供給する整流ガス供給管80と、処理容器10の内部にマイクロ波を放射するラジアルラインスロットアンテナ40と、を有する。
【選択図】図2
Description
10 処理容器
20 載置台
32 排気管
40 ラジアルラインスロットアンテナ
50 同軸導波管
60 第1の処理ガス供給管
70 第2の処理ガス供給管
80 整流ガス供給管
R 整流ガス
T1 第1の処理ガス
T2 第2の処理ガス
W ウェハ
Claims (9)
- 処理ガスをプラズマ化させて被処理体を処理するプラズマ処理装置であって、
被処理体を収容する処理容器と、
前記処理容器の底面に設けられ、被処理体を載置する載置部と、
前記処理容器の天井面中央部に設けられ、当該処理容器の内部に処理ガスを供給する第1の処理ガス供給部と、
前記処理容器の側面に設けられ、当該処理容器の内部に処理ガスを供給する第2の処理ガス供給部と、
前記第1の処理ガス供給部の外方且つ前記第2の処理ガス供給部の上方に設けられ、前記処理容器の内部に下方に向かう整流ガスを供給する整流ガス供給部と、
前記第1の処理ガス供給部と前記第2の処理ガス供給部のそれぞれから供給される処理ガスをプラズマ化するプラズマ生成部と、を有することを特徴とする、プラズマ処理装置。 - 前記整流ガス供給部は、前記処理容器の側面に設けられ、当該処理容器の内部に整流ガスを供給することを特徴する、請求項1に記載のプラズマ処理装置。
- 前記整流ガス供給部から供給される整流ガスの流量は、前記第2の処理ガス供給部から供給される処理ガスの流量よりも大きいことを特徴とする、請求項1又は2に記載のプラズマ処理装置。
- 前記第2の処理ガス供給部は、前記載置部に載置された被処理体に向けて処理ガスを供給することを特徴とする、請求項1〜3のいずれか一項に記載のプラズマ処理装置。
- 前記処理容器の天井面と前記載置部の上面との間の距離は、100mm〜200mmであることを特徴とする、請求項1〜4のいずれか一項に記載のプラズマ処理装置。
- 処理容器内で処理ガスをプラズマ化させて被処理体を処理するプラズマ処理方法であって、
前記処理容器の天井面中央部に設けられた第1の処理ガス供給部から、当該処理容器の内部に処理ガスを供給すると共に、
前記処理容器の側面に設けられた第2の処理ガス供給部から、当該処理容器の内部に処理ガスを供給し、
さらに前記第1の処理ガス供給部の外方且つ前記第2の処理ガス供給部の上方に設けられた整流ガス供給部から前記処理容器の内部に下方に向かう整流ガスを供給し、
前記処理容器の内部において、前記第1の処理ガス供給部と前記第2の処理ガス供給部のそれぞれから供給された処理ガスをプラズマ化させ、前記処理容器内の載置部に載置された被処理体を処理することを特徴とする、プラズマ処理方法。 - 前記整流ガス供給部は、前記処理容器の側面に設けられ、当該処理容器の内部に整流ガスを供給することを特徴する、請求項6に記載のプラズマ処理方法。
- 前記整流ガス供給部から供給される整流ガスの流量は、前記第2の処理ガス供給部から供給される処理ガスの流量よりも大きいことを特徴とする、請求項6又は7に記載のプラズマ処理方法。
- 前記第2の処理ガス供給部は、前記載置部に載置された被処理体に向けて処理ガスを供給することを特徴とする、請求項6〜8のいずれか一項に記載のプラズマ処理方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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JP2013218985A JP2015082546A (ja) | 2013-10-22 | 2013-10-22 | プラズマ処理装置及びプラズマ処理方法 |
TW103135573A TW201523703A (zh) | 2013-10-22 | 2014-10-14 | 電漿處理裝置及電漿處理方法 |
KR20140140744A KR20150046736A (ko) | 2013-10-22 | 2014-10-17 | 플라즈마 처리 장치 및 플라즈마 처리 방법 |
US14/518,101 US20150110973A1 (en) | 2013-10-22 | 2014-10-20 | Plasma processing apparatus and plasma processing method |
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JP2013218985A JP2015082546A (ja) | 2013-10-22 | 2013-10-22 | プラズマ処理装置及びプラズマ処理方法 |
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JP (1) | JP2015082546A (ja) |
KR (1) | KR20150046736A (ja) |
TW (1) | TW201523703A (ja) |
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JP7008602B2 (ja) * | 2018-09-27 | 2022-01-25 | 東京エレクトロン株式会社 | 成膜装置および温度制御方法 |
CN111058012B (zh) * | 2018-10-17 | 2023-03-21 | 北京北方华创微电子装备有限公司 | 进气装置及半导体加工设备 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0817748A (ja) * | 1994-06-27 | 1996-01-19 | Tokyo Electron Ltd | プラズマ処理装置 |
JP2002511905A (ja) * | 1997-06-30 | 2002-04-16 | ラム リサーチ コーポレイション | プラズマ処理装置のガス噴射システム |
JP2003332326A (ja) * | 2002-05-10 | 2003-11-21 | Tokyo Electron Ltd | プラズマ処理装置およびプラズマ処理方法 |
JP2007081342A (ja) * | 2005-09-16 | 2007-03-29 | Canon Inc | プラズマ処理装置 |
JP2010118549A (ja) * | 2008-11-13 | 2010-05-27 | Tokyo Electron Ltd | プラズマエッチング方法及びプラズマエッチング装置 |
Family Cites Families (3)
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JP5074741B2 (ja) * | 2006-11-10 | 2012-11-14 | 株式会社日立ハイテクノロジーズ | 真空処理装置 |
US8323521B2 (en) * | 2009-08-12 | 2012-12-04 | Tokyo Electron Limited | Plasma generation controlled by gravity-induced gas-diffusion separation (GIGDS) techniques |
JP2011077323A (ja) * | 2009-09-30 | 2011-04-14 | Tokyo Electron Ltd | 窒化珪素膜の成膜方法および半導体メモリ装置の製造方法 |
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2013
- 2013-10-22 JP JP2013218985A patent/JP2015082546A/ja active Pending
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2014
- 2014-10-14 TW TW103135573A patent/TW201523703A/zh unknown
- 2014-10-17 KR KR20140140744A patent/KR20150046736A/ko not_active Application Discontinuation
- 2014-10-20 US US14/518,101 patent/US20150110973A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0817748A (ja) * | 1994-06-27 | 1996-01-19 | Tokyo Electron Ltd | プラズマ処理装置 |
JP2002511905A (ja) * | 1997-06-30 | 2002-04-16 | ラム リサーチ コーポレイション | プラズマ処理装置のガス噴射システム |
JP2003332326A (ja) * | 2002-05-10 | 2003-11-21 | Tokyo Electron Ltd | プラズマ処理装置およびプラズマ処理方法 |
JP2007081342A (ja) * | 2005-09-16 | 2007-03-29 | Canon Inc | プラズマ処理装置 |
JP2010118549A (ja) * | 2008-11-13 | 2010-05-27 | Tokyo Electron Ltd | プラズマエッチング方法及びプラズマエッチング装置 |
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TW201523703A (zh) | 2015-06-16 |
KR20150046736A (ko) | 2015-04-30 |
US20150110973A1 (en) | 2015-04-23 |
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