KR100811583B1 - 반도체 디스플레이 장치 및 제조 방법 - Google Patents

반도체 디스플레이 장치 및 제조 방법 Download PDF

Info

Publication number
KR100811583B1
KR100811583B1 KR1020010016026A KR20010016026A KR100811583B1 KR 100811583 B1 KR100811583 B1 KR 100811583B1 KR 1020010016026 A KR1020010016026 A KR 1020010016026A KR 20010016026 A KR20010016026 A KR 20010016026A KR 100811583 B1 KR100811583 B1 KR 100811583B1
Authority
KR
South Korea
Prior art keywords
region
insulating film
gate electrode
gate
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020010016026A
Other languages
English (en)
Korean (ko)
Other versions
KR20010090590A (ko
Inventor
야마자키순페이
고야마준
스자와히데오미
오노코지
아레오타츄야
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Publication of KR20010090590A publication Critical patent/KR20010090590A/ko
Application granted granted Critical
Publication of KR100811583B1 publication Critical patent/KR100811583B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
KR1020010016026A 2000-03-27 2001-03-27 반도체 디스플레이 장치 및 제조 방법 Expired - Fee Related KR100811583B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000086720 2000-03-27
JP2000-086720 2000-03-27

Publications (2)

Publication Number Publication Date
KR20010090590A KR20010090590A (ko) 2001-10-18
KR100811583B1 true KR100811583B1 (ko) 2008-03-10

Family

ID=18602844

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020010016026A Expired - Fee Related KR100811583B1 (ko) 2000-03-27 2001-03-27 반도체 디스플레이 장치 및 제조 방법

Country Status (7)

Country Link
US (2) US7218361B2 (enExample)
JP (1) JP4712208B2 (enExample)
KR (1) KR100811583B1 (enExample)
CN (2) CN1197141C (enExample)
MY (1) MY135655A (enExample)
SG (1) SG94792A1 (enExample)
TW (1) TW513753B (enExample)

Families Citing this family (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001035808A (ja) 1999-07-22 2001-02-09 Semiconductor Energy Lab Co Ltd 配線およびその作製方法、この配線を備えた半導体装置、ドライエッチング方法
US6825488B2 (en) 2000-01-26 2004-11-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TW495854B (en) 2000-03-06 2002-07-21 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
US7525165B2 (en) * 2000-04-17 2009-04-28 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
US6706544B2 (en) * 2000-04-19 2004-03-16 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and fabricating method thereof
TWI224806B (en) 2000-05-12 2004-12-01 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
TW480576B (en) * 2000-05-12 2002-03-21 Semiconductor Energy Lab Semiconductor device and method for manufacturing same
TW504846B (en) * 2000-06-28 2002-10-01 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
JP2002151698A (ja) 2000-11-14 2002-05-24 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
SG179310A1 (en) * 2001-02-28 2012-04-27 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
JP4926329B2 (ja) * 2001-03-27 2012-05-09 株式会社半導体エネルギー研究所 半導体装置およびその作製方法、電気器具
SG116443A1 (en) * 2001-03-27 2005-11-28 Semiconductor Energy Lab Wiring and method of manufacturing the same, and wiring board and method of manufacturing the same.
JP2003045874A (ja) 2001-07-27 2003-02-14 Semiconductor Energy Lab Co Ltd 金属配線およびその作製方法、並びに金属配線基板およびその作製方法
JP4256087B2 (ja) * 2001-09-27 2009-04-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6773944B2 (en) * 2001-11-07 2004-08-10 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US7344825B2 (en) * 2002-04-04 2008-03-18 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device, and developing apparatus using the method
JP4515043B2 (ja) * 2002-05-17 2010-07-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4271413B2 (ja) * 2002-06-28 2009-06-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4408012B2 (ja) * 2002-07-01 2010-02-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4638115B2 (ja) * 2002-07-05 2011-02-23 シャープ株式会社 薄膜トランジスタ装置の製造方法
JP4434563B2 (ja) * 2002-09-12 2010-03-17 パイオニア株式会社 有機ｅｌ表示装置の製造方法
JP4454921B2 (ja) * 2002-09-27 2010-04-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4683817B2 (ja) * 2002-09-27 2011-05-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7332431B2 (en) 2002-10-17 2008-02-19 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US7875419B2 (en) * 2002-10-29 2011-01-25 Semiconductor Energy Laboratory Co., Ltd. Method for removing resist pattern and method for manufacturing semiconductor device
US7485579B2 (en) 2002-12-13 2009-02-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US7256079B2 (en) * 2002-12-16 2007-08-14 Semiconductor Energy Laboratory Co., Ltd. Evaluation method using a TEG, a method of manufacturing a semiconductor device having a TEG, an element substrate and a panel having the TEG, a program for controlling dosage and a computer-readable recording medium recoding the program
JP2004200378A (ja) 2002-12-18 2004-07-15 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP4663963B2 (ja) 2003-02-17 2011-04-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4170120B2 (ja) 2003-03-19 2008-10-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4373115B2 (ja) * 2003-04-04 2009-11-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4342826B2 (ja) 2003-04-23 2009-10-14 株式会社半導体エネルギー研究所 半導体素子の作製方法
US7423343B2 (en) * 2003-08-05 2008-09-09 Semiconductor Energy Laboratory Co., Ltd. Wiring board, manufacturing method thereof, semiconductor device and manufacturing method thereof
JP4447305B2 (ja) * 2003-12-22 2010-04-07 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
JP4055764B2 (ja) * 2004-01-26 2008-03-05 セイコーエプソン株式会社 電気光学装置及び電子機器
JP4444035B2 (ja) * 2004-04-21 2010-03-31 シャープ株式会社 表示装置用アクティブマトリクス基板およびその製造方法
KR101026808B1 (ko) 2004-04-30 2011-04-04 삼성전자주식회사 박막 트랜지스터 표시판의 제조 방법
CN100385684C (zh) * 2004-10-08 2008-04-30 中华映管股份有限公司 薄膜晶体管及其轻掺杂漏极区的制造方法
TWI382455B (zh) * 2004-11-04 2013-01-11 Semiconductor Energy Lab 半導體裝置和其製造方法
JP3948472B2 (ja) 2004-11-09 2007-07-25 セイコーエプソン株式会社 半導体装置の製造方法
US8003449B2 (en) 2004-11-26 2011-08-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device having a reverse staggered thin film transistor
JP4947910B2 (ja) * 2005-02-28 2012-06-06 三菱電機株式会社 半導体装置およびその製造方法
JP5121145B2 (ja) * 2005-03-07 2013-01-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
US20060197088A1 (en) * 2005-03-07 2006-09-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
JP2006269808A (ja) * 2005-03-24 2006-10-05 Mitsubishi Electric Corp 半導体装置および画像表示装置
TWI408734B (zh) * 2005-04-28 2013-09-11 Semiconductor Energy Lab 半導體裝置及其製造方法
US7579220B2 (en) 2005-05-20 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device manufacturing method
US7638372B2 (en) * 2005-06-22 2009-12-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8115206B2 (en) 2005-07-22 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN101233554B (zh) * 2005-09-15 2010-08-18 夏普株式会社 显示板
EP1998373A3 (en) * 2005-09-29 2012-10-31 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
US7601566B2 (en) * 2005-10-18 2009-10-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8629490B2 (en) * 2006-03-31 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor storage device with floating gate electrode and control gate electrode
DE102006060734B4 (de) * 2006-06-30 2014-03-06 Lg Display Co., Ltd. Flüssigkristalldisplay und Verfahren zu dessen Herstellung
KR101304902B1 (ko) * 2006-11-24 2013-09-05 삼성디스플레이 주식회사 액정 표시 장치
TWI329909B (en) * 2007-03-16 2010-09-01 Au Optronics Corp Pixel structure of lcd and fabrication method thereof
TWI333694B (en) * 2007-06-29 2010-11-21 Au Optronics Corp Pixel structure and fabrication method thereof
US8446551B2 (en) * 2007-12-10 2013-05-21 Teledyne Scientific & Imaging, Llc Method and apparatus to reduce dielectric discharge in liquid crystal devices driven with high voltages
JP5440878B2 (ja) * 2008-04-02 2014-03-12 Ｎｌｔテクノロジー株式会社 半導体装置及びその製造方法、並びに液晶表示装置及び電子機器
US8461582B2 (en) 2009-03-05 2013-06-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102162746B1 (ko) 2009-10-21 2020-10-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 아날로그 회로 및 반도체 장치
US8592879B2 (en) * 2010-09-13 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20120211862A1 (en) * 2011-02-18 2012-08-23 Semiconductor Energy Laboratory Co., Ltd. Soi substrate and method for manufacturing soi substrate
KR20120140474A (ko) 2011-06-21 2012-12-31 삼성디스플레이 주식회사 유기 발광 디스플레이 장치와, 이의 제조 방법
US8981368B2 (en) * 2012-01-11 2015-03-17 Sony Corporation Thin film transistor, method of manufacturing thin film transistor, display, and electronic apparatus
US9841833B2 (en) * 2015-06-30 2017-12-12 Lg Display Co., Ltd. Touch sensor integrated display device
CN107393934B (zh) 2017-08-14 2020-02-21 京东方科技集团股份有限公司 一种阵列基板、其制作方法及显示装置
CN109920856B (zh) * 2019-02-27 2021-03-19 合肥鑫晟光电科技有限公司 薄膜晶体管及其制造方法、阵列基板和显示装置
JP7409115B2 (ja) * 2020-01-30 2024-01-09 セイコーエプソン株式会社 電気光学装置、および電子機器

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0193103A (ja) * 1987-10-03 1989-04-12 Inoue Mtp Co Ltd 磁性ポリマー複合体およびその製造方法
JPH1093103A (ja) * 1996-08-24 1998-04-10 Lg Electron Inc 薄膜トランジスタ液晶表示装置及びその製造方法

Family Cites Families (82)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4394182A (en) * 1981-10-14 1983-07-19 Rockwell International Corporation Microelectronic shadow masking process for reducing punchthrough
JPS59121876A (ja) 1982-12-28 1984-07-14 Toshiba Corp 薄膜デバイス用ガラス基板
US5272100A (en) * 1988-09-08 1993-12-21 Mitsubishi Denki Kabushiki Kaisha Field effect transistor with T-shaped gate electrode and manufacturing method therefor
JP2513023B2 (ja) * 1988-10-24 1996-07-03 三菱電機株式会社 電界効果型半導体装置およびその製造方法
US5079606A (en) 1989-01-26 1992-01-07 Casio Computer Co., Ltd. Thin-film memory element
JP2622183B2 (ja) 1990-04-05 1997-06-18 シャープ株式会社 アクティブマトリクス表示装置
JP2845303B2 (ja) * 1991-08-23 1999-01-13 株式会社 半導体エネルギー研究所 半導体装置とその作製方法
JPH05243262A (ja) * 1992-02-28 1993-09-21 Citizen Watch Co Ltd 半導体装置の製造方法
JP3254007B2 (ja) 1992-06-09 2002-02-04 株式会社半導体エネルギー研究所 薄膜状半導体装置およびその作製方法
US5643801A (en) 1992-11-06 1997-07-01 Semiconductor Energy Laboratory Co., Ltd. Laser processing method and alignment
JPH06148685A (ja) 1992-11-13 1994-05-27 Toshiba Corp 液晶表示装置
JP3587537B2 (ja) * 1992-12-09 2004-11-10 株式会社半導体エネルギー研究所 半導体装置
EP0603866B1 (en) 1992-12-25 2002-07-24 Sony Corporation Active matrix substrate
KR100294026B1 (ko) * 1993-06-24 2001-09-17 야마자끼 순페이 전기광학장치
JPH0786609A (ja) * 1993-09-14 1995-03-31 Sony Corp マルチゲート半導体素子
US5923962A (en) 1993-10-29 1999-07-13 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
JP3431033B2 (ja) 1993-10-29 2003-07-28 株式会社半導体エネルギー研究所 半導体作製方法
TW264575B (enExample) 1993-10-29 1995-12-01 Handotai Energy Kenkyusho Kk
US7081938B1 (en) 1993-12-03 2006-07-25 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
JP3398453B2 (ja) 1994-02-24 2003-04-21 株式会社東芝 薄膜トランジスタの製造方法
JPH07302912A (ja) * 1994-04-29 1995-11-14 Semiconductor Energy Lab Co Ltd 半導体装置
JPH0864838A (ja) * 1994-08-26 1996-03-08 Casio Comput Co Ltd 薄膜トランジスタ
JP3548237B2 (ja) * 1994-08-29 2004-07-28 シャープ株式会社 薄膜トランジスタ
US5491099A (en) * 1994-08-29 1996-02-13 United Microelectronics Corporation Method of making silicided LDD with recess in semiconductor substrate
JP3464287B2 (ja) 1994-09-05 2003-11-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH08125166A (ja) 1994-10-19 1996-05-17 Toshiba Corp 固体撮像装置およびその製造方法
JPH08274336A (ja) 1995-03-30 1996-10-18 Toshiba Corp 多結晶半導体薄膜トランジスタ及びその製造方法
JP3307181B2 (ja) 1995-07-31 2002-07-24 ソニー株式会社 透過型表示装置
JPH0955508A (ja) * 1995-08-10 1997-02-25 Sanyo Electric Co Ltd 薄膜トランジスタ及びその製造方法
US5612234A (en) * 1995-10-04 1997-03-18 Lg Electronics Inc. Method for manufacturing a thin film transistor
KR100206876B1 (ko) * 1995-12-28 1999-07-01 구본준 모스전계효과트랜지스터 제조방법
TW335503B (en) 1996-02-23 1998-07-01 Semiconductor Energy Lab Kk Semiconductor thin film and manufacturing method and semiconductor device and its manufacturing method
DE19712233C2 (de) 1996-03-26 2003-12-11 Lg Philips Lcd Co Flüssigkristallanzeige und Herstellungsverfahren dafür
US5731216A (en) * 1996-03-27 1998-03-24 Image Quest Technologies, Inc. Method of making an active matrix display incorporating an improved TFT
JPH1023351A (ja) 1996-07-03 1998-01-23 Toshiba Corp 移動体用ワイドｔｖの自動振幅制御装置
JP3708637B2 (ja) 1996-07-15 2005-10-19 株式会社半導体エネルギー研究所 液晶表示装置
JP3597331B2 (ja) 1996-10-24 2004-12-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3645377B2 (ja) 1996-10-24 2005-05-11 株式会社半導体エネルギー研究所 集積回路の作製方法
JPH10172762A (ja) * 1996-12-11 1998-06-26 Sanyo Electric Co Ltd エレクトロルミネッセンス素子を用いた表示装置の製造方法及び表示装置
JP3468003B2 (ja) 1996-12-20 2003-11-17 ソニー株式会社 表示用薄膜半導体装置
US6088070A (en) * 1997-01-17 2000-07-11 Semiconductor Energy Laboratory Co., Ltd. Active matrix liquid crystal with capacitor between light blocking film and pixel connecting electrode
JPH10233511A (ja) 1997-02-21 1998-09-02 Toshiba Corp 薄膜トランジスタ装置及び薄膜トランジスタ装置の製造方法並びに液晶表示装置
JPH10240162A (ja) 1997-02-28 1998-09-11 Sony Corp アクティブマトリクス表示装置
JP3883641B2 (ja) * 1997-03-27 2007-02-21 株式会社半導体エネルギー研究所 コンタクト構造およびアクティブマトリクス型表示装置
US5889302A (en) 1997-04-21 1999-03-30 Advanced Micro Devices, Inc. Multilayer floating gate field effect transistor structure for use in integrated circuit devices
JP2000031488A (ja) 1997-08-26 2000-01-28 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP3374717B2 (ja) 1997-09-11 2003-02-10 セイコーエプソン株式会社 液晶表示パネルの製造方法
JP4044187B2 (ja) 1997-10-20 2008-02-06 株式会社半導体エネルギー研究所 アクティブマトリクス型表示装置およびその作製方法
US6369410B1 (en) * 1997-12-15 2002-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the semiconductor device
JPH11177105A (ja) * 1997-12-15 1999-07-02 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JPH11261075A (ja) 1998-03-13 1999-09-24 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
TWI226470B (en) * 1998-01-19 2005-01-11 Hitachi Ltd LCD device
US5853960A (en) 1998-03-18 1998-12-29 Trw Inc. Method for producing a micro optical semiconductor lens
JPH11274502A (ja) 1998-03-20 1999-10-08 Toshiba Corp 薄膜トランジスタおよび薄膜トランジスタの製造方法
US5986305A (en) * 1998-03-30 1999-11-16 Texas Instruments - Acer Incorporated Semiconductor device with an inverse-T gate lightly-doped drain structure
JP4312851B2 (ja) 1998-04-27 2009-08-12 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
TW418539B (en) * 1998-05-29 2001-01-11 Samsung Electronics Co Ltd A method for forming TFT in liquid crystal display
JP3702096B2 (ja) 1998-06-08 2005-10-05 三洋電機株式会社 薄膜トランジスタ及び表示装置
JP3736122B2 (ja) 1998-06-23 2006-01-18 セイコーエプソン株式会社 液晶装置及び電子機器
JP3883706B2 (ja) * 1998-07-31 2007-02-21 シャープ株式会社 エッチング方法、及び薄膜トランジスタマトリックス基板の製造方法
JP2000058847A (ja) * 1998-07-31 2000-02-25 Semiconductor Energy Lab Co Ltd 半導体素子からなる半導体回路を備えた半導体装置およびその作製方法
US6555420B1 (en) 1998-08-31 2003-04-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and process for producing semiconductor device
JP3141860B2 (ja) 1998-10-28 2001-03-07 ソニー株式会社 液晶表示装置の製造方法
US6617644B1 (en) 1998-11-09 2003-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US6909114B1 (en) 1998-11-17 2005-06-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having LDD regions
US6420758B1 (en) * 1998-11-17 2002-07-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an impurity region overlapping a gate electrode
US6365917B1 (en) * 1998-11-25 2002-04-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP3107075B2 (ja) 1998-12-14 2000-11-06 日本電気株式会社 液晶表示装置
US6259138B1 (en) 1998-12-18 2001-07-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having multilayered gate electrode and impurity regions overlapping therewith
US6331473B1 (en) 1998-12-29 2001-12-18 Seiko Epson Corporation SOI substrate, method for making the same, semiconductive device and liquid crystal panel using the same
JP4372943B2 (ja) 1999-02-23 2009-11-25 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
EP1041641B1 (en) 1999-03-26 2015-11-04 Semiconductor Energy Laboratory Co., Ltd. A method for manufacturing an electrooptical device
AU769693B2 (en) * 1999-04-12 2004-01-29 Hisamitsu Pharmaceutical Co. Inc. Iontophoresis device
JP3711211B2 (ja) 1999-05-26 2005-11-02 シャープ株式会社 固体撮像装置
TW478014B (en) 1999-08-31 2002-03-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing thereof
JP4700156B2 (ja) 1999-09-27 2011-06-15 株式会社半導体エネルギー研究所 半導体装置
JP3386017B2 (ja) * 1999-10-15 2003-03-10 日本電気株式会社 液晶表示装置用の薄膜トランジスタの製造方法
JP4801249B2 (ja) 1999-11-19 2011-10-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW495854B (en) * 2000-03-06 2002-07-21 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
TW504846B (en) * 2000-06-28 2002-10-01 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
US7038294B2 (en) 2001-03-29 2006-05-02 Taiwan Semiconductor Manufacturing Company, Ltd. Planar spiral inductor structure with patterned microelectronic structure integral thereto
US6740938B2 (en) 2001-04-16 2004-05-25 Semiconductor Energy Laboratory Co., Ltd. Transistor provided with first and second gate electrodes with channel region therebetween

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0193103A (ja) * 1987-10-03 1989-04-12 Inoue Mtp Co Ltd 磁性ポリマー複合体およびその製造方法
JPH1093103A (ja) * 1996-08-24 1998-04-10 Lg Electron Inc 薄膜トランジスタ液晶表示装置及びその製造方法

Also Published As

Publication number Publication date
CN1319781A (zh) 2001-10-31
SG94792A1 (en) 2003-03-18
CN1598677A (zh) 2005-03-23
US7486344B2 (en) 2009-02-03
MY135655A (en) 2008-06-30
US7218361B2 (en) 2007-05-15
TW513753B (en) 2002-12-11
US20010052950A1 (en) 2001-12-20
US20070138480A1 (en) 2007-06-21
CN100397218C (zh) 2008-06-25
JP2001345453A (ja) 2001-12-14
CN1197141C (zh) 2005-04-13
JP4712208B2 (ja) 2011-06-29
KR20010090590A (ko) 2001-10-18

Similar Documents

Publication Publication Date Title
KR100811583B1 (ko) 반도체 디스플레이 장치 및 제조 방법
JP5600762B2 (ja) 半導体装置
US7638846B2 (en) Semiconductor device and manufacturing method thereof
US7800115B2 (en) Semiconductor device and method of manufacturing same
JP4741613B2 (ja) 表示装置
JP4485078B2 (ja) 半導体装置の作製方法
US7567328B2 (en) Liquid-crystal display device and method of fabricating the same
US8502231B2 (en) Semiconductor device
US8357611B2 (en) Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof
US6337235B1 (en) Semiconductor device and manufacturing method thereof
JP2008083731A (ja) 半導体装置
JP4485481B2 (ja) 半導体装置の作製方法
JP4704363B2 (ja) 半導体装置の作製方法

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20130130

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20140203

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20150120

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20160127

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

FPAY Annual fee payment

Payment date: 20170201

Year of fee payment: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20180304

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20180304