KR100710773B1 - 일렉트로 루미네센스 표시 장치 - Google Patents

일렉트로 루미네센스 표시 장치 Download PDF

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Publication number
KR100710773B1
KR100710773B1 KR1020000005906A KR20000005906A KR100710773B1 KR 100710773 B1 KR100710773 B1 KR 100710773B1 KR 1020000005906 A KR1020000005906 A KR 1020000005906A KR 20000005906 A KR20000005906 A KR 20000005906A KR 100710773 B1 KR100710773 B1 KR 100710773B1
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KR
South Korea
Prior art keywords
storage capacitor
organic
display device
tft
capacitor electrode
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Expired - Lifetime
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KR1020000005906A
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English (en)
Korean (ko)
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KR20010014476A (ko
Inventor
야스다히또시
Original Assignee
산요덴키가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors

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  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Control Of El Displays (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
KR1020000005906A 1999-02-09 2000-02-09 일렉트로 루미네센스 표시 장치 Expired - Lifetime KR100710773B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1999-031388 1999-02-09
JP03138899A JP4334045B2 (ja) 1999-02-09 1999-02-09 エレクトロルミネッセンス表示装置

Publications (2)

Publication Number Publication Date
KR20010014476A KR20010014476A (ko) 2001-02-26
KR100710773B1 true KR100710773B1 (ko) 2007-04-24

Family

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Family Applications (1)

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KR1020000005906A Expired - Lifetime KR100710773B1 (ko) 1999-02-09 2000-02-09 일렉트로 루미네센스 표시 장치

Country Status (4)

Country Link
US (1) US6476419B1 (enExample)
JP (1) JP4334045B2 (enExample)
KR (1) KR100710773B1 (enExample)
TW (1) TW435053B (enExample)

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Publication number Priority date Publication date Assignee Title
US9728122B2 (en) 2012-10-04 2017-08-08 Samsung Display Co., Ltd. Organic light emitting diode display

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JP2001282137A (ja) * 2000-03-30 2001-10-12 Sanyo Electric Co Ltd エレクトロルミネッセンス表示装置
US8610645B2 (en) 2000-05-12 2013-12-17 Semiconductor Energy Laboratory Co., Ltd. Display device
TW554637B (en) * 2000-05-12 2003-09-21 Semiconductor Energy Lab Display device and light emitting device
JP2002093586A (ja) * 2000-09-19 2002-03-29 Semiconductor Energy Lab Co Ltd 発光装置およびその作製方法
US6956324B2 (en) 2000-08-04 2005-10-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method therefor
JP4556957B2 (ja) * 2000-10-12 2010-10-06 セイコーエプソン株式会社 電気光学装置及び電子機器
JP2002182203A (ja) * 2000-12-12 2002-06-26 Nec Corp 表示装置、その表示方法、およびその製造方法
KR100776509B1 (ko) * 2000-12-30 2007-11-16 엘지.필립스 엘시디 주식회사 액정표시장치 및 그 제조방법
JP4137454B2 (ja) * 2001-01-17 2008-08-20 株式会社半導体エネルギー研究所 発光装置、電子機器及び発光装置の作製方法
US6825496B2 (en) 2001-01-17 2004-11-30 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
JP2002244617A (ja) * 2001-02-15 2002-08-30 Sanyo Electric Co Ltd 有機ｅｌ画素回路
JP3810725B2 (ja) * 2001-09-21 2006-08-16 株式会社半導体エネルギー研究所 発光装置及び電子機器
KR100763171B1 (ko) * 2001-11-07 2007-10-08 엘지.필립스 엘시디 주식회사 액티브 매트릭스 유기전계발광소자 및 그 제조방법
JP4265210B2 (ja) * 2001-12-17 2009-05-20 セイコーエプソン株式会社 有機ｅｌ装置及び電子機器
CN1209662C (zh) * 2001-12-17 2005-07-06 精工爱普生株式会社 显示装置及电子机器
GB0130601D0 (en) * 2001-12-21 2002-02-06 Koninkl Philips Electronics Nv Active matrix display device
KR100892945B1 (ko) * 2002-02-22 2009-04-09 삼성전자주식회사 액티브 매트릭스형 유기전계발광 표시장치 및 그 제조방법
KR100461467B1 (ko) * 2002-03-13 2004-12-13 엘지.필립스 엘시디 주식회사 능동행렬 유기전기발광소자
JP4027149B2 (ja) 2002-04-30 2007-12-26 三洋電機株式会社 エレクトロルミネッセンス表示装置
KR100894651B1 (ko) * 2002-07-08 2009-04-24 엘지디스플레이 주식회사 액티브 매트릭스형 유기 전계발광 표시패널 및 그의제조방법
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GB0313041D0 (en) * 2003-06-06 2003-07-09 Koninkl Philips Electronics Nv Display device having current-driven pixels
US7557779B2 (en) 2003-06-13 2009-07-07 Semiconductor Energy Laboratory Co., Ltd. Display device
JP4652233B2 (ja) * 2003-07-08 2011-03-16 株式会社半導体エネルギー研究所 アクティブマトリクス型表示装置
JP3965583B2 (ja) * 2003-09-01 2007-08-29 カシオ計算機株式会社 表示画素及び表示装置
JPWO2006016662A1 (ja) * 2004-08-11 2008-05-01 三洋電機株式会社 半導体素子マトリクスアレイ、その製造方法及び表示パネル
JP4186961B2 (ja) * 2004-10-26 2008-11-26 セイコーエプソン株式会社 自発光装置、その駆動方法、画素回路および電子機器
KR20060044032A (ko) 2004-11-11 2006-05-16 삼성전자주식회사 표시패널용 검사 장치 및 이의 검사 방법
KR101333509B1 (ko) * 2004-12-06 2013-11-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 표시 모듈, 및 휴대 전화
JP4580775B2 (ja) * 2005-02-14 2010-11-17 株式会社 日立ディスプレイズ 表示装置及びその駆動方法
US7994509B2 (en) * 2005-11-01 2011-08-09 Hewlett-Packard Development Company, L.P. Structure and method for thin film device with stranded conductor
US7341893B2 (en) * 2005-06-02 2008-03-11 Hewlett-Packard Development Company, L.P. Structure and method for thin film device
TWI429327B (zh) 2005-06-30 2014-03-01 Semiconductor Energy Lab 半導體裝置、顯示裝置、及電子設備
WO2007013646A1 (en) * 2005-07-29 2007-02-01 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
KR101324756B1 (ko) 2005-10-18 2013-11-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치 및 그의 구동방법
KR20070059403A (ko) * 2005-12-06 2007-06-12 삼성전자주식회사 표시 장치 및 그 구동 방법
JP5251034B2 (ja) * 2007-08-15 2013-07-31 ソニー株式会社 表示装置および電子機器
US7977678B2 (en) 2007-12-21 2011-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
JP5536349B2 (ja) * 2009-01-30 2014-07-02 エルジー ディスプレイ カンパニー リミテッド 画像表示装置
TWI407410B (zh) 2009-04-29 2013-09-01 Innolux Corp 影像顯示系統
CN103943664B (zh) * 2009-05-13 2017-07-28 群创光电股份有限公司 影像显示系统
CN101887906B (zh) * 2009-05-13 2014-06-11 群创光电股份有限公司 影像显示系统
TWI480998B (zh) * 2012-05-24 2015-04-11 Au Optronics Corp 有機發光畫素的結構、製作方法以及驅動電路
JP6082563B2 (ja) * 2012-10-15 2017-02-15 株式会社ジャパンディスプレイ 表示装置
KR101968666B1 (ko) * 2014-09-01 2019-04-15 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
US9941489B2 (en) 2014-09-01 2018-04-10 Samsung Display Co., Ltd. Organic light emitting diode display device and manufacturing method thereof
JP5975120B2 (ja) * 2015-01-19 2016-08-23 セイコーエプソン株式会社 電気光学装置および電子機器
KR102500271B1 (ko) * 2015-08-19 2023-02-16 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9728122B2 (en) 2012-10-04 2017-08-08 Samsung Display Co., Ltd. Organic light emitting diode display

Also Published As

Publication number Publication date
TW435053B (en) 2001-05-16
US6476419B1 (en) 2002-11-05
JP2000231347A (ja) 2000-08-22
JP4334045B2 (ja) 2009-09-16
KR20010014476A (ko) 2001-02-26

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