KR20010014476A - 일렉트로 루미네센스 표시 장치 - Google Patents
일렉트로 루미네센스 표시 장치 Download PDFInfo
- Publication number
- KR20010014476A KR20010014476A KR1020000005906A KR20000005906A KR20010014476A KR 20010014476 A KR20010014476 A KR 20010014476A KR 1020000005906 A KR1020000005906 A KR 1020000005906A KR 20000005906 A KR20000005906 A KR 20000005906A KR 20010014476 A KR20010014476 A KR 20010014476A
- Authority
- KR
- South Korea
- Prior art keywords
- storage capacitor
- electrode
- capacity
- tft
- gate
- Prior art date
Links
- 238000005401 electroluminescence Methods 0.000 title claims description 10
- 239000003990 capacitor Substances 0.000 claims description 61
- 239000010408 film Substances 0.000 claims description 56
- 239000010409 thin film Substances 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 31
- 239000000758 substrate Substances 0.000 description 11
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 239000011651 chromium Substances 0.000 description 8
- 108091006146 Channels Proteins 0.000 description 7
- 229910052804 chromium Inorganic materials 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- -1 3-methylphenylphenylamino Chemical group 0.000 description 2
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical class N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- JHYLKGDXMUDNEO-UHFFFAOYSA-N [Mg].[In] Chemical compound [Mg].[In] JHYLKGDXMUDNEO-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000002779 inactivation Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
Abstract
Description
Claims (2)
- 양극과 음극사이에 발광층을 갖는 일렉트로 루미네센스 소자와, 능동층의 드레인이 드레인 신호선에 접속되고 게이트가 게이트 신호선에 각각 접속된 제1 박막 트랜지스터와, 비단결정(非單結晶) 반도체막으로 이루어지는 능동층의 드레인이 상기 일렉트로 루미네센스 소자의 구동 전원에 접속되고 게이트가 상기 제1 박막 트랜지스터의 소스에 접속된 제2 박막 트랜지스터를 구비한 일렉트로 루미네센스 표시 장치에 있어서,직류 전압이 인가된 공통 전극에 접속된 제1 유지 용량 전극과 상기 제1 박막 트랜지스터의 소스에 접속된 제2 유지 용량 전극사이에서 용량을 이루는 제1 유지 용량; 및상기 구동 전원에 접속된 제3 유지 용량 전극과 상기 제2 유지 용량 전극사이에서 용량을 이루는 제2 유지 용량을 포함하는 것을 특징으로 하는 일렉트로 루미네센스 표시 장치.
- 제1항에 있어서, 상기 제3 유지 용량 전극은 상기 구동 전원에 접속된 구동 전원선의 일부로 이루어지는 것을 특징으로 하는 일렉트로 루미네센스 표시 장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP03138899A JP4334045B2 (ja) | 1999-02-09 | 1999-02-09 | エレクトロルミネッセンス表示装置 |
JP1999-031388 | 1999-02-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20010014476A true KR20010014476A (ko) | 2001-02-26 |
KR100710773B1 KR100710773B1 (ko) | 2007-04-24 |
Family
ID=12329888
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020000005906A KR100710773B1 (ko) | 1999-02-09 | 2000-02-09 | 일렉트로 루미네센스 표시 장치 |
Country Status (4)
Country | Link |
---|---|
US (1) | US6476419B1 (ko) |
JP (1) | JP4334045B2 (ko) |
KR (1) | KR100710773B1 (ko) |
TW (1) | TW435053B (ko) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100461467B1 (ko) * | 2002-03-13 | 2004-12-13 | 엘지.필립스 엘시디 주식회사 | 능동행렬 유기전기발광소자 |
US6933671B2 (en) | 2001-12-17 | 2005-08-23 | Seiko Epson Corporation | Display system including functional layers and electronic device having same |
KR100894651B1 (ko) * | 2002-07-08 | 2009-04-24 | 엘지디스플레이 주식회사 | 액티브 매트릭스형 유기 전계발광 표시패널 및 그의제조방법 |
KR20160027917A (ko) * | 2014-09-01 | 2016-03-10 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
US10230074B2 (en) | 2014-09-01 | 2019-03-12 | Samsung Display Co., Ltd. | Organic light emitting diode display device and manufacturing method thereof |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2284605A3 (en) | 1999-02-23 | 2017-10-18 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device and fabrication method thereof |
JP4472073B2 (ja) | 1999-09-03 | 2010-06-02 | 株式会社半導体エネルギー研究所 | 表示装置及びその作製方法 |
JP2001282137A (ja) * | 2000-03-30 | 2001-10-12 | Sanyo Electric Co Ltd | エレクトロルミネッセンス表示装置 |
US8610645B2 (en) | 2000-05-12 | 2013-12-17 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
TW554637B (en) * | 2000-05-12 | 2003-09-21 | Semiconductor Energy Lab | Display device and light emitting device |
JP2002093586A (ja) * | 2000-09-19 | 2002-03-29 | Semiconductor Energy Lab Co Ltd | 発光装置およびその作製方法 |
US6956324B2 (en) | 2000-08-04 | 2005-10-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method therefor |
JP4556957B2 (ja) * | 2000-10-12 | 2010-10-06 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
JP2002182203A (ja) * | 2000-12-12 | 2002-06-26 | Nec Corp | 表示装置、その表示方法、およびその製造方法 |
KR100776509B1 (ko) * | 2000-12-30 | 2007-11-16 | 엘지.필립스 엘시디 주식회사 | 액정표시장치 및 그 제조방법 |
US6825496B2 (en) | 2001-01-17 | 2004-11-30 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
JP4137454B2 (ja) * | 2001-01-17 | 2008-08-20 | 株式会社半導体エネルギー研究所 | 発光装置、電子機器及び発光装置の作製方法 |
JP2002244617A (ja) * | 2001-02-15 | 2002-08-30 | Sanyo Electric Co Ltd | 有機el画素回路 |
JP3810725B2 (ja) | 2001-09-21 | 2006-08-16 | 株式会社半導体エネルギー研究所 | 発光装置及び電子機器 |
KR100763171B1 (ko) * | 2001-11-07 | 2007-10-08 | 엘지.필립스 엘시디 주식회사 | 액티브 매트릭스 유기전계발광소자 및 그 제조방법 |
JP4265210B2 (ja) * | 2001-12-17 | 2009-05-20 | セイコーエプソン株式会社 | 有機el装置及び電子機器 |
GB0130601D0 (en) * | 2001-12-21 | 2002-02-06 | Koninkl Philips Electronics Nv | Active matrix display device |
KR100892945B1 (ko) * | 2002-02-22 | 2009-04-09 | 삼성전자주식회사 | 액티브 매트릭스형 유기전계발광 표시장치 및 그 제조방법 |
JP4027149B2 (ja) | 2002-04-30 | 2007-12-26 | 三洋電機株式会社 | エレクトロルミネッセンス表示装置 |
US6919681B2 (en) * | 2003-04-30 | 2005-07-19 | Eastman Kodak Company | Color OLED display with improved power efficiency |
GB0313041D0 (en) * | 2003-06-06 | 2003-07-09 | Koninkl Philips Electronics Nv | Display device having current-driven pixels |
US7557779B2 (en) | 2003-06-13 | 2009-07-07 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
KR101115295B1 (ko) * | 2003-07-08 | 2012-03-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 및 그 구동방법 |
JP3965583B2 (ja) * | 2003-09-01 | 2007-08-29 | カシオ計算機株式会社 | 表示画素及び表示装置 |
TWI269448B (en) * | 2004-08-11 | 2006-12-21 | Sanyo Electric Co | Semiconductor element matrix array, method for manufacturing the same, and display device |
JP4186961B2 (ja) * | 2004-10-26 | 2008-11-26 | セイコーエプソン株式会社 | 自発光装置、その駆動方法、画素回路および電子機器 |
KR20060044032A (ko) | 2004-11-11 | 2006-05-16 | 삼성전자주식회사 | 표시패널용 검사 장치 및 이의 검사 방법 |
CN102738180B (zh) | 2004-12-06 | 2018-12-21 | 株式会社半导体能源研究所 | 显示装置 |
JP4580775B2 (ja) * | 2005-02-14 | 2010-11-17 | 株式会社 日立ディスプレイズ | 表示装置及びその駆動方法 |
US7341893B2 (en) * | 2005-06-02 | 2008-03-11 | Hewlett-Packard Development Company, L.P. | Structure and method for thin film device |
US7994509B2 (en) * | 2005-11-01 | 2011-08-09 | Hewlett-Packard Development Company, L.P. | Structure and method for thin film device with stranded conductor |
TWI429327B (zh) | 2005-06-30 | 2014-03-01 | Semiconductor Energy Lab | 半導體裝置、顯示裝置、及電子設備 |
EP1917656B1 (en) * | 2005-07-29 | 2016-08-24 | Semiconductor Energy Laboratory Co., Ltd. | Display device and driving method thereof |
KR101324756B1 (ko) | 2005-10-18 | 2013-11-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 및 그의 구동방법 |
KR20070059403A (ko) * | 2005-12-06 | 2007-06-12 | 삼성전자주식회사 | 표시 장치 및 그 구동 방법 |
JP5251034B2 (ja) * | 2007-08-15 | 2013-07-31 | ソニー株式会社 | 表示装置および電子機器 |
US7977678B2 (en) | 2007-12-21 | 2011-07-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
JP5536349B2 (ja) * | 2009-01-30 | 2014-07-02 | エルジー ディスプレイ カンパニー リミテッド | 画像表示装置 |
TWI407410B (zh) | 2009-04-29 | 2013-09-01 | Innolux Corp | 影像顯示系統 |
CN101887906B (zh) * | 2009-05-13 | 2014-06-11 | 群创光电股份有限公司 | 影像显示系统 |
CN103943664B (zh) * | 2009-05-13 | 2017-07-28 | 群创光电股份有限公司 | 影像显示系统 |
TWI480998B (zh) * | 2012-05-24 | 2015-04-11 | Au Optronics Corp | 有機發光畫素的結構、製作方法以及驅動電路 |
KR101975957B1 (ko) | 2012-10-04 | 2019-05-08 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
JP6082563B2 (ja) * | 2012-10-15 | 2017-02-15 | 株式会社ジャパンディスプレイ | 表示装置 |
JP5975120B2 (ja) * | 2015-01-19 | 2016-08-23 | セイコーエプソン株式会社 | 電気光学装置および電子機器 |
KR102500271B1 (ko) * | 2015-08-19 | 2023-02-16 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0695186B2 (ja) * | 1986-03-05 | 1994-11-24 | 松下電器産業株式会社 | 薄膜トランジスタアレイ |
JPH0471194A (ja) * | 1990-07-10 | 1992-03-05 | Fuji Xerox Co Ltd | Tft駆動elディスプレイ及びその製造方法 |
JPH05303116A (ja) * | 1992-02-28 | 1993-11-16 | Canon Inc | 半導体装置 |
JPH0772506A (ja) * | 1993-06-14 | 1995-03-17 | Casio Comput Co Ltd | 薄膜トランジスタパネル |
JP3399048B2 (ja) * | 1993-10-22 | 2003-04-21 | 三菱化学株式会社 | 有機電界発光パネル |
US6104041A (en) * | 1994-08-24 | 2000-08-15 | Sarnoff Corporation | Switching circuitry layout for an active matrix electroluminescent display pixel with each pixel provided with the transistors |
US5684365A (en) * | 1994-12-14 | 1997-11-04 | Eastman Kodak Company | TFT-el display panel using organic electroluminescent media |
JP3096394B2 (ja) * | 1994-12-27 | 2000-10-10 | シャープ株式会社 | 表示装置 |
JPH0981053A (ja) * | 1995-09-07 | 1997-03-28 | Casio Comput Co Ltd | 電界発光素子及びその駆動方法 |
JPH09114398A (ja) * | 1995-10-24 | 1997-05-02 | Idemitsu Kosan Co Ltd | 有機elディスプレイ |
JP3530362B2 (ja) * | 1996-12-19 | 2004-05-24 | 三洋電機株式会社 | 自発光型画像表示装置 |
JPH10319872A (ja) * | 1997-01-17 | 1998-12-04 | Xerox Corp | アクティブマトリクス有機発光ダイオード表示装置 |
KR100226494B1 (ko) * | 1997-02-20 | 1999-10-15 | 김영환 | 액정표시장치 및 그 제조방법 |
JP3492153B2 (ja) * | 1997-06-25 | 2004-02-03 | キヤノン株式会社 | エレクトロ・ルミネセンス素子及び装置、並びにその製造法 |
JP3520396B2 (ja) * | 1997-07-02 | 2004-04-19 | セイコーエプソン株式会社 | アクティブマトリクス基板と表示装置 |
US5895936A (en) * | 1997-07-09 | 1999-04-20 | Direct Radiography Co. | Image capture device using a secondary electrode |
JP3702096B2 (ja) * | 1998-06-08 | 2005-10-05 | 三洋電機株式会社 | 薄膜トランジスタ及び表示装置 |
TW439387B (en) * | 1998-12-01 | 2001-06-07 | Sanyo Electric Co | Display device |
-
1999
- 1999-02-09 JP JP03138899A patent/JP4334045B2/ja not_active Expired - Lifetime
-
2000
- 2000-02-08 TW TW089102045A patent/TW435053B/zh not_active IP Right Cessation
- 2000-02-09 KR KR1020000005906A patent/KR100710773B1/ko active IP Right Grant
- 2000-02-09 US US09/501,411 patent/US6476419B1/en not_active Expired - Lifetime
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6933671B2 (en) | 2001-12-17 | 2005-08-23 | Seiko Epson Corporation | Display system including functional layers and electronic device having same |
KR100461467B1 (ko) * | 2002-03-13 | 2004-12-13 | 엘지.필립스 엘시디 주식회사 | 능동행렬 유기전기발광소자 |
KR100894651B1 (ko) * | 2002-07-08 | 2009-04-24 | 엘지디스플레이 주식회사 | 액티브 매트릭스형 유기 전계발광 표시패널 및 그의제조방법 |
KR20160027917A (ko) * | 2014-09-01 | 2016-03-10 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
US10230074B2 (en) | 2014-09-01 | 2019-03-12 | Samsung Display Co., Ltd. | Organic light emitting diode display device and manufacturing method thereof |
US10505157B2 (en) | 2014-09-01 | 2019-12-10 | Samsung Display Co., Ltd. | Display device |
US10818880B2 (en) | 2014-09-01 | 2020-10-27 | Samsung Display Co., Ltd. | Display device |
US11696485B2 (en) | 2014-09-01 | 2023-07-04 | Samsung Display Co., Ltd. | Display device with driving voltage line overlapping gate electrode to form storage capacitor |
Also Published As
Publication number | Publication date |
---|---|
JP4334045B2 (ja) | 2009-09-16 |
TW435053B (en) | 2001-05-16 |
KR100710773B1 (ko) | 2007-04-24 |
JP2000231347A (ja) | 2000-08-22 |
US6476419B1 (en) | 2002-11-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100710773B1 (ko) | 일렉트로 루미네센스 표시 장치 | |
KR100637822B1 (ko) | 전자 발광 표시 장치 | |
KR100714946B1 (ko) | 일렉트로 루미네센스 표시 장치 | |
KR100653297B1 (ko) | 일렉트로 루미네선스 표시 장치 | |
KR20010014501A (ko) | 일렉트로 루미네센스 표시 장치 | |
JP4236150B2 (ja) | 製造工程が単純化されたアクティブマトリックス型有機電界発光素子及びその製造方法 | |
KR100742494B1 (ko) | 박막 트랜지스터 및 유기 일렉트로루미네센스 표시 장치 | |
US7456431B2 (en) | Organic light emitting display | |
JPH11231805A (ja) | 表示装置 | |
KR20070095620A (ko) | 표시 장치 및 그 제조 방법 | |
KR20030085508A (ko) | 일렉트로 루미네센스 표시 장치 | |
JP2001100654A (ja) | El表示装置 | |
JP3649927B2 (ja) | エレクトロルミネッセンス表示装置 | |
JP2001282137A (ja) | エレクトロルミネッセンス表示装置 | |
US7129524B2 (en) | Organic electroluminescent device and method for fabricating the same | |
JP2000223279A (ja) | エレクトロルミネッセンス表示装置 | |
JP2000172199A (ja) | エレクトロルミネッセンス表示装置 | |
KR20020071660A (ko) | 유기 전계 발광 표시장치의 제조방법 | |
JP2001272930A (ja) | エレクトロルミネッセンス表示装置 | |
US20030213955A1 (en) | Light emitting apparatus and manufacturing method thereof | |
KR100899158B1 (ko) | 액티브 매트릭스형 유기 전계발광 표시패널 및 그의제조방법 | |
KR20040005168A (ko) | 액티브 매트릭스형 유기 전계발광 표시패널 및 그의제조방법 | |
US20040217355A1 (en) | Electroluminescent display device | |
US7825415B2 (en) | Transistor of organic light-emitting, method for fabricating the transistor, and organic light-emitting device including the transistor | |
KR20080002036A (ko) | 유기 전계 발광 표시소자 및 그 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20130318 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20140320 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20160318 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20170302 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20180316 Year of fee payment: 12 |
|
FPAY | Annual fee payment |
Payment date: 20190319 Year of fee payment: 13 |