KR100541377B1 - 반도체장치, 반도체장치의 제조방법 및 반도체장치의 제조장치 - Google Patents
반도체장치, 반도체장치의 제조방법 및 반도체장치의 제조장치 Download PDFInfo
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- KR100541377B1 KR100541377B1 KR1020020002128A KR20020002128A KR100541377B1 KR 100541377 B1 KR100541377 B1 KR 100541377B1 KR 1020020002128 A KR1020020002128 A KR 1020020002128A KR 20020002128 A KR20020002128 A KR 20020002128A KR 100541377 B1 KR100541377 B1 KR 100541377B1
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- Prior art keywords
- solder
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- metal
- alloy
- semiconductor device
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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Abstract
Description
Claims (47)
- 삭제
- 배선층상에 형성된 제1 금속을 구비한 UBM층상에 합금솔더로 형성된 솔더범프를 적어도 구비한 반도체장치에 있어서,합금솔더의 주성분인 금속, UBM층에 포함된 제1금속 및 합금솔더의 주성분인 금속과 다른 제2 금속을 구비한 합금층을 포함하며, 상기 합금층은 솔더범프와 UBM층의 사이에 형성되는 반도체장치.
- 배선층상에 형성된 제1 금속을 구비한 UBM층상에 합금솔더로 형성된 솔더범프를 적어도 구비한 반도체장치에 있어서,솔더범프와 UBM층 사이에 형성된 금속간화합물을 포함하며, 상기 금속간화합물은:UBM층에 포함된 제1금속;UBM층상에 일시적으로 배설된 후 솔더범프의 형성시에 합금솔더에 녹는 금속층을 구성하는 제2 금속; 및합금솔더의 주성분인 금속을 포함하는 반도체장치.
- 배선층상에 형성된 제1 금속을 구비한 UBM층상에 합금솔더로 형성된 솔더범프를 적어도 구비한 반도체장치에 있어서,솔더범프와 UBM층 사이에 형성된 합금층을 포함하며,상기 합금층은 UBM층에 포함된 제1금속, UBM층상에 일시적으로 배설된 후 솔더범프의 형성시에 합금솔더로 녹는 금속층을 구성하는 제2 금속, 및 합금솔더의 주성분인 금속으로 구성된 금속간화합물을 포함하는 반도체장치.
- 제2항 내지 제4항 중 어느 한 항에 있어서, 합금솔더의 주성분인 상기 금속은 주석인 반도체장치.
- 제5항에 있어서, 주석 다음으로 합금솔더의 제2 주성분인 금속은 은인 반도체장치.
- 제5항에 있어서, 구리가 합금솔더에 첨가된 반도체장치.
- 제2항 내지 제4항 중 어느 한 항에 있어서, 제2 금속은 구리 및 제1 금속과 다른 금속 중의 하나이며, 주석과 함께 금속간화합물을 형성하도록 된 반도체장치.
- 제2항 내지 제4항 중 어느 한 항에 있어서, UBM층에 포함된 제1 금속은 니켈을 구비하는 반도체장치.
- 제9항에 있어서, UBM층이 니켈 및 다른 막질을 가진 니켈합금 중의 하나로부터 형성된 적층막인 반도체장치.
- 제9항에 있어서, UBM층이 니켈과 니켈합금 중의 하나 및 구리와 구리합금 중의 하나로부터 형성된 적층막인 반도체장치.
- 제10항에 있어서, 니켈합금은 니켈/바나디움합금, 니켈/인합금 및 니켈/티탄늄합금으로 이루어진 그룹으로부터 선택된 합금을 구비하는 반도체장치
- 제2항 내지 제4항 중 어느 한 항에 있어서, 콘택트층이 배선층과 UBM층 사이에 제공된 반도체장치.
- 제13항에 있어서, 콘택트층은 티탄늄 및 티탄늄/텅스텐합금 중의 하나를 구 비한 반도체장치.
- 제1 금속을 구비한 UBM층을 매개하여 배선층상에 형성된 합금솔더의 솔더범프를 적어도 구비한 반도체장치의 제조방법에 있어서,첨가된 솔더범프의 주성분 금속과 다른 제2 금속을 가진 합금솔더를 용융하는 단계; 및용융된 합금솔더를 냉각하여 UBM층과 솔더범프 사이의 계면에서 합금솔더의 제2 금속, 주성분 금속 및 UBM층에 포함된 제1금속을 구비한 금속간화합물을 증착하는 단계를 포함하는 반도체장치의 제조방법.
- 합금솔더와의 반응을 통하여 계면에서 제1 금속간화합물을 형성하는 제1 금속을 구비한 UBM층을 배선층상에 형성하는 단계;첨가된 주성분 금속과 다른 제2 금속을 가진 합금솔더를 제공하는 단계; 및냉각 전에 합금솔더를 일시적으로 용융하여 UBM층과 합금솔더 사이의 계면에 합금층을 형성하는 단계를 포함하며,상기 합금층은 UBM층에 포함된 제1금속, 합금솔더의 주성분 금속 및 상기 주성분 금속과 다른 제2 금속으로 이루어진 금속간화합물인 반도체장치의 제조방법.
- 제1 금속을 구비한 UBM층을 매개하여 배선층상에 형성된 합금솔더로 이루어진 솔더범프를 적어도 구비한 반도체장치의 제조방법에 있어서,UBM층상에 제2 금속의 금속층을 형성하는 단계;솔더범프를 형성시, 전 금속층을 용융하여 합금솔더로 용융한 후 냉각하여 UBM층과 솔더범프 사이의 계면에 UBM층에 포함된 상기 제1 금속, 상기 제2 금속 및 합금솔더의 주성분 금속을 구비한 금속간화합물을 증착하는 단계를 포함하는 반도체장치의 제조방법.
- 합금솔더와의 반응을 통하여 계면에서 제1 금속간화합물을 형성하는 제1 금속을 구비하는 UBM층을 배선층상에 형성하는 단계;합금솔더와의 반응을 통하여 제2 금속간화합물을 형성하는 제2 금속으로 이루어진 금속층을 형성하는 단계;합금솔더를 공급하는 단계; 및합금솔더를 일시적으로 용융한 후 냉각에 의하여 UBM층과 합금솔더 사이의 계면에서 합금층을 형성하는 단계를 포함하며,상기 합금층은 제1 금속간화합물과 제2 금속간화합물의 복합인 반도체장치의 제조방법.
- 제17항 또는 제18항에 있어서, 금으로 이루어진 산화방지막이 상기 금속층상에 얇게 더 형성되는 반도체장치의 제조방법.
- 합금솔더와의 반응을 통하여 계면에서 제1 금속간화합물을 형성하는 제1 금속을 구비한 UBM층을 배선층 상에 형성하는 단계;합금솔더와의 반응을 통하여 제2 금속간화합물을 형성하는 제2 금속으로 이루어진 금속층을 형성하는 단계;금속층 상에 주석의 박막을 형성하고 제2 금속과 주석의 합금층을 형성하는 단계; 및합금솔더를 공급하는 단계를 포함하는 반도체장치의 제조방법.
- 제15항 내지 제18항 및 제20항 중 어느 한 항에 있어서, 상기 배선층상에 상기 UBM층의 형성 전, 상기 배선층과 상기 UBM층의 접합을 유지하기 위한 콘택트층을 형성하는 단계를 더 포함하는 반도체장치의 제조방법.
- 제15항 내지 제18항 및 제20항의 어느 한 항에 있어서, 솔더범프의 형성시, 합금솔더의 용융과 금속간화합물의 증착은 솔더범프와 UBM층 사이의 계면 온도를 소정의 온도기울기로 솔더범프 꼭대기에서의 온도보다 낮게 설정함으로써 수행되는 반도체장치의 제조방법.
- 제15항 내지 제18항 및 제20항의 어느 한 항에 있어서, 솔더범프의 형성시, 상기 합금솔더의 용융과 상기 금속간화합물의 증착은 스테이지 상에 반도체장치를 장착하고, 상기 스테이지의 저부에 이동이 가능하도록 제공된 가열판과 냉각판을 연속적으로 상기 스테이지와 접촉하도록 함으로써 수행되는 반도체장치의 제조방법.
- 제23항에 있어서, 상기 가열판을 이용하여 가열시, 상기 반도체장치는 상기 반도체장치의 상부에 제공된 비접촉형 가열원에 의하여 위로부터도 가열되며, 상기 냉각판을 이용하여 냉각시, 상기 비접촉형 가열원을 이용하여 계속해서 가열하면서, 솔더범프의 꼭대기와 솔더범프의 계면 사이의 온도기울기를 증가시켜 상기 UBM층과 상기 금속간화합물의 계면에서 증착을 촉진시키는 반도체장치의 제조방법.
- 제23항에 있어서, 상기 냉각판을 이용한 냉각은 적어도 2℃/초 의 냉각속도로 수행되는 반도체장치의 제조방법.
- 제23항에 있어서, 상기 가열판을 이용한 가열과 상기 냉각판을 이용한 냉각은 소정 기체의 진공분위기에서 수행되는 반도체장치의 제조방법.
- 제26항에 있어서, 상기 소정 기체는 불활성기체와 환원성기체를 구비하는 반도체장치의 제조방법.
- 제27항에 있어서, 상기 불활성기체는 질소와 아르곤을 포함하며, 상기 환원성기체는 수소 및 수소를 구비한 혼합기체 중의 하나를 포함하는 반도체장치의 제조방법.
- 제15항 내지 제18항 및 제20항의 어느 한 항에 있어서, 상기 UBM층은 스퍼텅링에 의하여 형성되는 니켈, 니켈합금, 구리 및 구리합금으로 이루어진 그룹으로부터 선택된 것으로 이루어진 단일막과 그 복수개 막의 적층체 중의 하나로부터 형성되는 반도체장치의 제조방법.
- 제15항 내지 제18항 및 제20항의 어느 한 항에 있어서, 상기 UBM층은 비전해질도금 및 전해질도금 중의 하나에 의하여 형성되는 니켈, 니켈합금, 구리 및 구리합금으로 이루어진 그룹으로부터 선택된 것으로 이루어진 단일막과 그 복수개 막의 적층체 중의 하나로부터 형성되는 반도체장치의 제조방법.
- 제15항 내지 제18항 및 제20항의 어느 한 항에 있어서, 상기 UBM층은 스퍼터링에 의하여 형성되는 니켈, 니켈합금, 구리 및 구리합금으로 이루어진 그룹으로부터 선택된 것으로 이루어진 막과, 비전해질도금과 전해질도금 중의 하나에 의하여 형성되는 니켈, 니켈합금, 구리 및 구리합금으로 이루어진 그룹으로부터 선택된 것으로 이루어진 막의 적층막으로서 형성되는 반도체장치의 제조방법.
- 제15항 내지 제18항 및 제20항의 어느 한 항에 있어서, 상기 금속층은 적어도 스퍼터링, 비전해질도금 및 전해질도금 중의 하나에 의하여 형성된 구리박막을 구비하는 반도체장치의 제조방법.
- 제32항에 있어서, 상기 합금솔더를 용융할 때 상기 금속층이 상기 합금솔더로 전부 용융되도록 하며, 상기 합금솔더를 냉각시, 적어도 상기 금속층의 금속 일부가 상기 합금솔더로부터 적층되도록, 상기 금속층의 막두께를 설정하는 반도체장치의 제조방법.
- 제15항 내지 제18항 및 제20항의 어느 한 항에 있어서, 상기 합금솔더가 소정의 량으로 형성되는 볼과 펠릿의 하나로 공급되는 반도체장치의 제조방법.
- 제15항 내지 제18항 및 제20항의 어느 한 항에 있어서, 상기 합금솔더가 솔더페이스트로 공급되는 반도체장치의 제조방법.
- 제15항 내지 제18항 및 제20항의 어느 한 항에 있어서, 상기 합금솔더의 주성분은 주석인 반도체장치의 제조방법.
- 제36항에 있어서, 상기 합금솔더의 주석 다음으로 주성분은 은인 반도체장치의 제조방법.
- 제36항에 있어서, 구리가 상기 합금솔더에 첨가되는 반도체장치의 제조방법.
- 시료를 장착하기 위한 스테이지;상기 시료를 가열하기 위한 가열부; 및아래로부터 상기 시료를 냉각하기 위한 냉각부를 포함하며상기 가열부와 상기 냉각부 중의 적어도 하나는 상기 스테이지에 장착되는 반도체의 제조장치.
- 제39항에 있어서, 상기 시료는 솔더를 구비한 반도체장치인 반도체의 제조장치.
- 시료를 장착하기 위한 스테이지;내재된 가열원을 구비한 가열판을 포함하며 상기 시료를 가열하기 위한 가열부; 및내재된 냉각매체를 구비한 냉각판을 포함하며 아래로부터 상기 시료를 냉각하기 위한 냉각부를 포함하고,가열과 냉각은 연속적으로 상기 가열판과 상기 냉각판을 상기 스테이지의 저면과 접촉하여 열을 전도함으로써 수행되는 반도체의 제조장치.
- 삭제
- 제39항에 있어서, 접촉하지 않고 위로부터 상기 시료를 가열하기 위하여, 상기 스테이지의 윗부분에 제공된 비접촉형 가열부를 더 포함하는 반도체의 제조장치.
- 제40항에 있어서, 접촉하지 않고 위로부터 반도체장치를 가열하기 위하여, 상기 스테이지의 윗부분에 제공된 비접촉형 가열부를 더 포함하는 반도체의 제조장치.
- 제43항에 있어서, 상기 스테이지와 상기 시료 표면의 온도를 측정하기 위한 온도센서; 및상기 시료의 윗 표면과 아랫 면의 온도기울기가 소정의 값이 되도록 상기 온도센서로부터의 출력을 참조하여 냉각부와 비접촉형 가열부를 독립적으로 제어하기 위한 제어장치를 더 포함하는 반도체의 제조장치.
- 제44항에 있어서, 상기 스테이지와 상기 반도체 표면의 온도를 측정하기 위한 온도센서; 및상기 반도체의 윗 표면과 아랫 면의 온도기울기가 소정의 값이 되도록 상기 온도센서로부터의 출력을 참조하여 냉각부와 비접촉형 가열부를 독립적으로 제어하기 위한 제어장치를 더 포함하는 반도체의 제조장치.
- 삭제
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Also Published As
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JP2002280417A (ja) | 2002-09-27 |
EP1223613A2 (en) | 2002-07-17 |
KR20020061528A (ko) | 2002-07-24 |
US20070295786A1 (en) | 2007-12-27 |
US7282432B2 (en) | 2007-10-16 |
TW527675B (en) | 2003-04-11 |
US20100015796A1 (en) | 2010-01-21 |
US20050279812A1 (en) | 2005-12-22 |
US6969915B2 (en) | 2005-11-29 |
DE60238152D1 (de) | 2010-12-16 |
JP4656275B2 (ja) | 2011-03-23 |
US7611041B2 (en) | 2009-11-03 |
US20020093096A1 (en) | 2002-07-18 |
SG114520A1 (en) | 2005-09-28 |
EP1223613B1 (en) | 2010-11-03 |
US7793818B2 (en) | 2010-09-14 |
EP1223613A3 (en) | 2006-04-12 |
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