JP2017508293A - 低温取付けのためのハイブリッドインターコネクト - Google Patents
低温取付けのためのハイブリッドインターコネクト Download PDFInfo
- Publication number
- JP2017508293A JP2017508293A JP2016554385A JP2016554385A JP2017508293A JP 2017508293 A JP2017508293 A JP 2017508293A JP 2016554385 A JP2016554385 A JP 2016554385A JP 2016554385 A JP2016554385 A JP 2016554385A JP 2017508293 A JP2017508293 A JP 2017508293A
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- Prior art keywords
- alloy
- solder
- melting point
- lts
- pad
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- 238000009434 installation Methods 0.000 title 1
- 229910000679 solder Inorganic materials 0.000 claims abstract description 177
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 93
- 239000000956 alloy Substances 0.000 claims abstract description 93
- 238000000034 method Methods 0.000 claims abstract description 86
- 230000008018 melting Effects 0.000 claims abstract description 81
- 238000002844 melting Methods 0.000 claims abstract description 81
- 230000008569 process Effects 0.000 claims abstract description 73
- 239000000758 substrate Substances 0.000 claims abstract description 58
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 28
- 239000010949 copper Substances 0.000 claims description 27
- 238000000465 moulding Methods 0.000 claims description 27
- 150000001875 compounds Chemical class 0.000 claims description 26
- 229910052802 copper Inorganic materials 0.000 claims description 21
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 20
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 15
- 229910000765 intermetallic Inorganic materials 0.000 claims description 15
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 12
- 229910052797 bismuth Inorganic materials 0.000 claims description 11
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 10
- 229910052718 tin Inorganic materials 0.000 claims description 10
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 8
- 239000004332 silver Substances 0.000 claims description 8
- 229910052738 indium Inorganic materials 0.000 claims description 7
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 229910052763 palladium Inorganic materials 0.000 claims description 6
- 239000011135 tin Substances 0.000 claims description 6
- 239000003755 preservative agent Substances 0.000 claims description 5
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 4
- 230000002335 preservative effect Effects 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 238000004891 communication Methods 0.000 description 17
- 230000007246 mechanism Effects 0.000 description 9
- 230000004907 flux Effects 0.000 description 8
- 238000001125 extrusion Methods 0.000 description 7
- 229910001152 Bi alloy Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910000846 In alloy Inorganic materials 0.000 description 2
- 229910001245 Sb alloy Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- CMFIWMWBTZQTQH-IDTAVKCVSA-N 9-[(2r,3r,4s,5s)-3,4-dihydroxy-5-(2-methylpropylsulfanylmethyl)oxolan-2-yl]-3h-purin-6-one Chemical compound O[C@@H]1[C@H](O)[C@@H](CSCC(C)C)O[C@H]1N1C(NC=NC2=O)=C2N=C1 CMFIWMWBTZQTQH-IDTAVKCVSA-N 0.000 description 1
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000002648 laminated material Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- -1 molding compound 120 Chemical class 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
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- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
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Abstract
Description
例1は、パッドが上に配設された基板と、前記パッドと結合されたはんだボールであり、錫、銀、及び銅の合金を含んだはんだボールと、概して前記パッドと前記はんだボールとの間に位置するはんだペーストであり、前記合金と、前記合金の融点以下の融点を持つ低温はんだ(LTS)と、を含んだはんだペーストと、を有する装置を含み得る。
Claims (21)
- パッドが上に配設された基板と、
前記パッドと結合されたはんだボールであり、錫、銀、及び銅の合金を含んだはんだボールと、
概して前記パッドと前記はんだボールとの間に位置するはんだペーストであり、前記合金と、前記合金の融点以下の融点を持つ低温はんだ(LTS)と、を含んだはんだペーストと、
を有する装置。 - 前記パッドは、銅を有し、且つニッケル、パラジウム、金、銅、又ははんだ付け可能な有機防腐剤の表面仕上げを有する、請求項1に記載の装置。
- 前記合金は鉛フリー合金である、請求項1に記載の装置。
- 前記LTSはインジウム又はビスマスを含む、請求項1に記載の装置。
- 前記はんだペーストは、略同量で前記合金及び前記LTSを有する、請求項1に記載の装置。
- 前記基板と結合された成形コンパウンドであり、前記はんだボール及び前記はんだペーストに概して横方向で隣接して且つ前記はんだボール及び前記はんだペーストを概して取り囲んで配設された成形コンパウンド、
を更に有する請求項1乃至5の何れかに記載の装置。 - 前記はんだペーストと前記基板との間に置かれた金属間化合物(IMC)、を更に有する請求項1乃至5の何れかに記載の装置。
- 前記IMCは、ニッケル、銅、錫、ビスマス、又はこれらの合金を含む、請求項7に記載の装置。
- 前記合金は、およそ180℃とおよそ280℃との間の融点を持つ、請求項1乃至5の何れかに記載の装置。
- 前記はんだペーストは、175℃以上の融点を持つ、請求項9に記載の装置。
- 基板のパッド上にはんだペーストを配置し、前記はんだペーストは、217℃以下の融点を持つ低温はんだ(LTS)と、錫、銀、及び銅の合金とを含み、
前記はんだペーストが前記パッドとはんだボールとの間に置かれるように、前記はんだペースト上に、前記合金を含んだはんだボールを位置付け、且つ
前記LTSの融点よりも上且つ前記合金の融点よりも下の温度でリフロープロセスを実行する、
ことを有する方法。 - 前記LTSはインジウム又はビスマスを含む、請求項11に記載の方法。
- 前記合金の融点は、およそ180℃とおよそ280℃との間である、請求項11に記載の方法。
- 前記リフロープロセス中に、前記はんだボールと前記パッドとの間に、前記パッドに直に隣接して金属間化合物(IMC)を形成する、ことを更に有する請求項11乃至13の何れかに記載の方法。
- 前記パッドは銅を有する、請求項11乃至13の何れかに記載の方法。
- 第1の面及び第2の面を持つ基板、前記第1の面上にマウントされたダイ、並びに前記基板の前記第1の面上に配設されたパッドと、
前記基板の前記第1の面と結合された成形コンパウンドであり、前記パッドの上にモールド貫通ビアを有する成形コンパウンドと、
前記モールド貫通ビアの中に位置付けられ且つ前記パッドと結合されたはんだジョイントであり、当該はんだジョイントは、
鉛フリー合金を有するはんだボールと、
概して前記基板と前記はんだボールとの間に位置するはんだペーストであり、概して同量で、前記鉛フリー合金と、175℃以下の融点を持つ低温はんだ(LTS)と、を含んだはんだペーストと
を有し、当該はんだジョイントは、前記ダイの電気信号を送るように構成されている、はんだジョイントと、
を有する装置。 - 前記鉛フリー合金は、錫、銀、及び銅を含む、請求項16に記載の装置。
- 前記LTSはインジウム又はビスマスを含む、請求項16に記載の装置。
- 前記鉛フリー合金は、217℃の融点を持つ、請求項16乃至18の何れかに記載の装置。
- 前記はんだペーストは、175℃よりも高い融点を持つ、請求項19に記載の装置。
- 前記パッドは、ニッケル、パラジウム、金、銅、又ははんだ付け可能な有機防腐剤の表面仕上げを備えた銅を有する、請求項16乃至18の何れかに記載の装置。
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PCT/US2014/032084 WO2015147844A1 (en) | 2014-03-27 | 2014-03-27 | Hybrid interconnect for low temperature attach |
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JP (1) | JP2017508293A (ja) |
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CN (1) | CN106030783B (ja) |
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CN117677074A (zh) * | 2023-12-29 | 2024-03-08 | 立臻电子科技(昆山)有限公司 | 多层电路板焊接方法 |
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2014
- 2014-03-27 DE DE112014006271.5T patent/DE112014006271B4/de active Active
- 2014-03-27 KR KR1020167023490A patent/KR20160113686A/ko active Search and Examination
- 2014-03-27 JP JP2016554385A patent/JP2017508293A/ja active Pending
- 2014-03-27 CN CN201480076416.XA patent/CN106030783B/zh active Active
- 2014-03-27 WO PCT/US2014/032084 patent/WO2015147844A1/en active Application Filing
- 2014-03-27 US US14/430,131 patent/US20160260679A1/en not_active Abandoned
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JP2002076605A (ja) * | 2000-06-12 | 2002-03-15 | Hitachi Ltd | 半導体モジュール及び半導体装置を接続した回路基板 |
JP2004167569A (ja) * | 2002-11-20 | 2004-06-17 | Harima Chem Inc | 無鉛はんだペースト組成物およびはんだ付け方法 |
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GB201614555D0 (en) | 2016-10-12 |
GB2540060B (en) | 2019-02-13 |
KR20160113686A (ko) | 2016-09-30 |
US20160260679A1 (en) | 2016-09-08 |
WO2015147844A1 (en) | 2015-10-01 |
CN106030783B (zh) | 2019-06-18 |
CN106030783A (zh) | 2016-10-12 |
DE112014006271B4 (de) | 2023-03-09 |
GB2540060A (en) | 2017-01-04 |
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