JP6061276B2 - 金属層間のはんだ接合の形成方法 - Google Patents
金属層間のはんだ接合の形成方法 Download PDFInfo
- Publication number
- JP6061276B2 JP6061276B2 JP2014174773A JP2014174773A JP6061276B2 JP 6061276 B2 JP6061276 B2 JP 6061276B2 JP 2014174773 A JP2014174773 A JP 2014174773A JP 2014174773 A JP2014174773 A JP 2014174773A JP 6061276 B2 JP6061276 B2 JP 6061276B2
- Authority
- JP
- Japan
- Prior art keywords
- metal
- metal posts
- posts
- temperature
- intermetallic compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
- B23K1/0016—Brazing of electronic components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/19—Soldering, e.g. brazing, or unsoldering taking account of the properties of the materials to be soldered
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
- B23K35/262—Sn as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/302—Cu as the principal constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C13/00—Alloys based on tin
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/02—Alloys based on copper with tin as the next major constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3431—Leadless components
- H05K3/3436—Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
- H05K3/3463—Solder compositions in relation to features of the printed circuit board or the mounting process
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3494—Heating methods for reflowing of solder
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/42—Printed circuits
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13147—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13155—Nickel [Ni] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16237—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bonding area disposed in a recess of the surface of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16238—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bonding area protruding from the surface of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81053—Bonding environment
- H01L2224/81095—Temperature settings
- H01L2224/81096—Transient conditions
- H01L2224/81097—Heating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8112—Aligning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81193—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
- H01L2224/8181—Soldering or alloying involving forming an intermetallic compound at the bonding interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01022—Titanium [Ti]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01026—Iron [Fe]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01027—Cobalt [Co]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01028—Nickel [Ni]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0103—Zinc [Zn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01032—Germanium [Ge]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01049—Indium [In]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01083—Bismuth [Bi]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Description
(i)低温側(図2や図6の例では下側)の金属(Cu)とIMCとの界面の凹凸(粗さ)は、高温側(図2や図6の上側)での界面の凹凸(粗さ)よりも小さい。
(ii)片側((図2や図6の例では下側)からのIMC成長が支配的であるため、はんだ接合の両端のIMC(例えばCu3Sn)層を接続するIMC(例えばCu6Sn5)の各結晶粒は単一となっている。すなわち、その結晶方向が揃っている。
12 金属層(第1金属ポスト)
14 第2基板(半導体チップ)
16 金属層(第2金属ポスト)
18 はんだ材料
19 アンダーフィル(樹脂)
Claims (12)
- 金属層間のはんだ接合の形成方法であって、
上下に対向する2つの金属層の間にはんだ材料が載置された構造を準備するステップと、
前記構造を加熱して前記2つの金属層の間に金属間化合物を成長させるステップと、を含み、
前記金属間化合物を成長させるステップは、
前記2つの金属層の前記はんだ材料に接する一方の面を前記金属間化合物が成長可能な第1温度にし、前記2つの金属層の前記はんだ材料に接する他方の面を前記第1温度より高い第2温度にすることを含み、
前記2つの金属層の間の温度勾配(温度/単位長さ)を所定値以上に維持しながら前記金属間化合物が前記2つの金属層の間を略完全に埋めるまで実行される、方法。 - 前記温度勾配の所定値は、0.1℃/μmである、請求項1に記載の方法。
- 前記2つの金属層間の前記金属間化合物の平均厚さは、10μm以上である、請求項1または2に記載の方法。
- 前記2つの金属層はCuまたはNiからなり、前記はんだ材料は、Sn単体、Ag、Au、Cu、Ni、Bi、In、Zn、Co、Ge、Fe、及びTiを含むグループの中から選択された少なくとも1つの金属を含有するSn、またはInを主成分とするPbフリーはんだ金属からなる、請求項1〜3のいずれか1項に記載の方法。
- 前記構造を準備するステップは、
表面に複数の第1金属ポストが設けられた第1基板を準備するステップと、
表面に、複数の第1金属ポストと位置合わせされた複数の第2金属ポストと、当該複数の第2金属ポスト上のはんだ材料とが設けられた第2基板を準備するステップと、
前記第1基板の前記複数の金属ポストの各々と、対応する前記第2基板の前記複数の金属ポスト上のはんだ材料の各々とを接合して前記構造を形成するステップと、を含む請求項1に記載の方法。 - 前記第1基板は回路基板であり、前記第2基板は半導体チップである、請求項5に記載の方法。
- 前記構造を形成するステップの後に、前記回路基板と前記半導体チップとの間にアンダーフィルを形成するステップを更に含む、請求項6に記載の方法。
- 回路基板上に半導体チップをはんだ接合させる方法であって、
表面に複数の第1金属ポストが設けられた回路基板を準備するステップと、
表面に、複数の第1金属ポストと位置合わせされた複数の第2金属ポストと、当該複数の第2金属ポスト上のはんだ材料とが設けられた半導体チップを準備するステップと、
前記回路基板の前記第1金属ポストのある面と前記半導体チップの前記第2金属ポストのある面を上下に対向させて、前記回路基板の前記複数の第1金属ポストの各々と、対応する前記半導体チップの前記複数の第2金属ポスト上のはんだ材料の各々とを接合するステップと、
接合後の前記回路基板と前記半導体チップを加熱して、上下に対向する前記第1及び第2の金属ポスト間に金属間化合物を成長させるステップとを含み、
前記金属間化合物を成長させるステップは、
前記第1の金属ポストの前記はんだ材料に接する面を前記金属間化合物が成長可能な第1温度にし、前記第2の金属ポストの前記はんだ材料に接する面を前記第1温度より高い第2温度にすることを含み、
前記第1及び第2の金属ポスト間の温度勾配(温度/単位長さ)を所定値以上に維持しながら前記金属間化合物が前記第1及び第2の金属ポスト間を略完全に埋めるまで実行される、方法。 - 前記接合ステップと前記加熱ステップの間に、前記回路基板と前記半導体チップとの間にアンダーフィルを形成するステップを更に含む、請求項8に記載の方法。
- 前記温度勾配の所定値は、0.1℃/μmである、請求項8または9に記載の方法。
- 前記第1及び第2の金属ポスト間の前記金属間化合物の平均厚さは、10μm以上である、請求項8〜10のいずれか1項に記載の方法。
- 前記第1及び第2の金属ポストはCuまたはNiからなり、前記はんだ材料は、Sn単体、Ag、Au、Cu、Ni、Bi、In、Zn、Co、Ge、Fe、及びTiを含むグループの中から選択された少なくとも1つの金属を含有するSn、またはInを主成分とするPbフリーはんだ金属からなる、請求項8〜11のいずれか1項に記載の方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014174773A JP6061276B2 (ja) | 2014-08-29 | 2014-08-29 | 金属層間のはんだ接合の形成方法 |
US14/832,044 US9586281B2 (en) | 2014-08-29 | 2015-08-21 | Forming a solder joint between metal layers |
US15/402,269 US10252363B2 (en) | 2014-08-29 | 2017-01-10 | Forming a solder joint between metal layers |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014174773A JP6061276B2 (ja) | 2014-08-29 | 2014-08-29 | 金属層間のはんだ接合の形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016051743A JP2016051743A (ja) | 2016-04-11 |
JP6061276B2 true JP6061276B2 (ja) | 2017-01-18 |
Family
ID=55404264
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014174773A Active JP6061276B2 (ja) | 2014-08-29 | 2014-08-29 | 金属層間のはんだ接合の形成方法 |
Country Status (2)
Country | Link |
---|---|
US (2) | US9586281B2 (ja) |
JP (1) | JP6061276B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6061276B2 (ja) | 2014-08-29 | 2017-01-18 | インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Machines Corporation | 金属層間のはんだ接合の形成方法 |
CN108080810A (zh) * | 2017-12-13 | 2018-05-29 | 柳州智臻智能机械有限公司 | 一种电子封装用焊料合金及其制备方法 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5148152B2 (ja) * | 1972-05-11 | 1976-12-18 | ||
US4132571A (en) * | 1977-02-03 | 1979-01-02 | International Business Machines Corporation | Growth of polycrystalline semiconductor film with intermetallic nucleating layer |
DE3722730A1 (de) * | 1987-07-09 | 1989-01-19 | Productech Gmbh | Geheizter stempel |
US5470787A (en) * | 1994-05-02 | 1995-11-28 | Motorola, Inc. | Semiconductor device solder bump having intrinsic potential for forming an extended eutectic region and method for making and using the same |
FI98899C (fi) | 1994-10-28 | 1997-09-10 | Jorma Kalevi Kivilahti | Menetelmä elektroniikan komponenttien liittämiseksi juottamalla |
NL1009214C2 (nl) * | 1998-05-19 | 1999-12-07 | Soltec Bv | Reflowoven. |
US6138893A (en) * | 1998-06-25 | 2000-10-31 | International Business Machines Corporation | Method for producing a reliable BGA solder joint interconnection |
US6672500B2 (en) * | 1998-06-25 | 2004-01-06 | International Business Machines Corporation | Method for producing a reliable solder joint interconnection |
JP4656275B2 (ja) | 2001-01-15 | 2011-03-23 | 日本電気株式会社 | 半導体装置の製造方法 |
US6805974B2 (en) * | 2002-02-15 | 2004-10-19 | International Business Machines Corporation | Lead-free tin-silver-copper alloy solder composition |
US6936793B1 (en) * | 2002-04-17 | 2005-08-30 | Novastar Technologiesm Inc. | Oven apparatus and method of use thereof |
JP2005046882A (ja) | 2003-07-29 | 2005-02-24 | Hitachi Metals Ltd | はんだ合金、はんだボール及びはんだ接合体 |
WO2006048982A1 (ja) * | 2004-11-05 | 2006-05-11 | Neomax Materials Co., Ltd. | 気密封止用キャップ、気密封止用キャップの製造方法および電子部品収納用パッケージ |
WO2008041350A1 (en) | 2006-09-29 | 2008-04-10 | Kabushiki Kaisha Toshiba | Joint with first and second members with a joining layer located therebetween containing sn metal and another metallic material; methods for forming the same joint |
US7699944B2 (en) * | 2008-05-06 | 2010-04-20 | Honeywell International Inc. | Intermetallic braze alloys and methods of repairing engine components |
US8308052B2 (en) * | 2010-11-24 | 2012-11-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Thermal gradient reflow for forming columnar grain structures for solder bumps |
US8444043B1 (en) * | 2012-01-31 | 2013-05-21 | International Business Machines Corporation | Uniform solder reflow fixture |
KR102066300B1 (ko) | 2012-02-14 | 2020-03-02 | 미쓰비시 마테리알 가부시키가이샤 | 땜납 접합 구조, 파워 모듈, 히트 싱크가 형성된 파워 모듈용 기판 및 그것들의 제조 방법, 그리고 땜납 하지층 형성용 페이스트 |
JP2013170090A (ja) * | 2012-02-20 | 2013-09-02 | Denso Corp | セラミックスと金属の接合方法及びセラミックスと金属の接合構造 |
CN104144764B (zh) * | 2012-03-05 | 2016-12-14 | 株式会社村田制作所 | 接合方法、接合结构体及其制造方法 |
WO2014013463A2 (en) * | 2012-07-18 | 2014-01-23 | Koninklijke Philips N.V. | Method of soldering an electronic component with a high lateral accuracy |
JP5893528B2 (ja) * | 2012-07-27 | 2016-03-23 | 新日鉄住金マテリアルズ株式会社 | 無鉛はんだバンプ接合構造 |
JP2014041980A (ja) | 2012-08-23 | 2014-03-06 | International Business Maschines Corporation | はんだ接合部のエレクトロマイグレーション(em)耐性を向上させる界面合金層 |
JP6197619B2 (ja) * | 2013-12-09 | 2017-09-20 | 富士通株式会社 | 電子装置及び電子装置の製造方法 |
JP6061276B2 (ja) | 2014-08-29 | 2017-01-18 | インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Machines Corporation | 金属層間のはんだ接合の形成方法 |
-
2014
- 2014-08-29 JP JP2014174773A patent/JP6061276B2/ja active Active
-
2015
- 2015-08-21 US US14/832,044 patent/US9586281B2/en not_active Expired - Fee Related
-
2017
- 2017-01-10 US US15/402,269 patent/US10252363B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2016051743A (ja) | 2016-04-11 |
US9586281B2 (en) | 2017-03-07 |
US20160066435A1 (en) | 2016-03-03 |
US10252363B2 (en) | 2019-04-09 |
US20170120361A1 (en) | 2017-05-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8742600B2 (en) | Dual-phase intermetallic interconnection structure and method of fabricating the same | |
JP5881829B2 (ja) | クワッドフラットノーリードパッケージ体をパッケージングする方法、及びパッケージ体 | |
JP4501533B2 (ja) | 半導体装置の製造方法 | |
JP6061276B2 (ja) | 金属層間のはんだ接合の形成方法 | |
TW202326974A (zh) | 半導體元件的安裝結構及半導體元件與基板的組合 | |
US9349705B2 (en) | Method of fabricating a semiconductor structure having conductive bumps with a plurality of metal layers | |
JP5252024B2 (ja) | 半導体装置 | |
JP2011171427A (ja) | 積層型半導体装置 | |
CN104091788A (zh) | 基板和在基板上安装芯片的工艺 | |
JP2015008254A (ja) | 回路基板、回路基板の製造方法、半導体装置の製造方法および実装基板の製造方法 | |
JP6551432B2 (ja) | 半導体装置とその製造方法 | |
JP2009277949A (ja) | 半導体装置とその製造方法 | |
WO2014024796A1 (ja) | 半導体装置およびその製造方法 | |
US9478482B2 (en) | Offset integrated circuit packaging interconnects | |
JP2013093507A (ja) | 半導体チップを3次元積層アセンブリへと多段に形成していく、はんだ接合プロセス | |
JP4703356B2 (ja) | 積層型半導体装置 | |
JP2010199191A (ja) | 半導体パッケージ及び半導体パッケージの製造方法 | |
JP5187341B2 (ja) | 半導体装置の製造方法 | |
JP5333220B2 (ja) | 半導体装置の実装構造及び半導体装置の実装方法 | |
JP2008244277A (ja) | 半導体装置及びその製造方法 | |
KR102065765B1 (ko) | 솔더범프를 이용한 반도체칩의 단자 접합방법 | |
Toriyama et al. | Joint reliability study of solder capped metal pillar bump interconnections on an organic substrate | |
JP6304085B2 (ja) | 半導体装置及び半導体装置の製造方法 | |
JP4556788B2 (ja) | 多段電子部品の製造方法 | |
JP6859787B2 (ja) | はんだ接合体およびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20160112 |
|
A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20160122 |
|
A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20160428 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160506 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160512 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160812 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20161118 |
|
RD14 | Notification of resignation of power of sub attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7434 Effective date: 20161118 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20161206 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6061276 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |