KR100447364B1 - 반도체 장치 - Google Patents
반도체 장치 Download PDFInfo
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- KR100447364B1 KR100447364B1 KR10-2002-7012304A KR20027012304A KR100447364B1 KR 100447364 B1 KR100447364 B1 KR 100447364B1 KR 20027012304 A KR20027012304 A KR 20027012304A KR 100447364 B1 KR100447364 B1 KR 100447364B1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 105
- 238000011105 stabilization Methods 0.000 claims abstract description 140
- 239000000758 substrate Substances 0.000 claims abstract description 93
- 230000005669 field effect Effects 0.000 claims abstract description 57
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- 239000004020 conductor Substances 0.000 claims abstract description 11
- 230000006641 stabilisation Effects 0.000 claims description 139
- 230000015572 biosynthetic process Effects 0.000 claims description 19
- 238000009413 insulation Methods 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 72
- 239000010703 silicon Substances 0.000 abstract description 72
- 210000000746 body region Anatomy 0.000 abstract description 63
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 18
- 239000003990 capacitor Substances 0.000 abstract description 16
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229910021332 silicide Inorganic materials 0.000 description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 6
- 230000001151 other effect Effects 0.000 description 5
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- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41741—Source or drain electrodes for field effect devices for vertical or pseudo-vertical devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (27)
- 채널 형성 영역(2)을 샌드위치하여 상호 대향하는 소스 영역(3) 및 드레인 영역(1)과, 상기 채널 형성 영역(2)에 게이트 절연막(4, 4a)을 샌드위치하여 대향하는 게이트 전극(5a)을 갖는 절연 게이트형 전계 효과 트랜지스터부와,상기 드레인 영역(1)에 플레이트용 절연막(4, 4b)을 샌드위치하여 대향하고, 상기 드레인 영역(1)과의 사이에서 용량을 형성하는, 도전체 또는 반도체로 이루어지는 안정화 플레이트(5b)를 구비하고,상기 안정화 플레이트(5b)와 상기 드레인 영역(1) 사이에서 형성되는 안정화 플레이트 용량은, 상기 게이트 전극(5a)과 상기 드레인 영역(1) 사이에서 형성되는 게이트-드레인 용량보다도 큰 것을 특징으로 하는 반도체 장치.
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- 상호 대향하는 제1 주면 및 제2 주면을 갖는 반도체 기판과,채널 형성 영역(2)을 샌드위치하여 상호 대향하는 소스 영역(3) 및 드레인 영역(1)과, 상기 채널 형성 영역(2)에 게이트 절연막(4a)을 샌드위치하여 대향하는 게이트 전극(5a)을 각각 갖는 제1 및 제2 절연 게이트형 전계 효과 트랜지스터부와,상기 제1 절연 게이트형 전계 효과 트랜지스터부의 상기 드레인 영역(1)에 제1 플레이트용 절연막(4b)을 샌드위치하여 대향하고, 상기 제1 절연 게이트형 전계 효과 트랜지스터부의 상기 드레인 영역(1) 사이에서 용량을 형성하는, 도전체또는 반도체로 이루어지는 제1 안정화 플레이트(5b)와,상기 제2 절연 게이트형 전계 효과 트랜지스터부의 상기 드레인 영역(1)에 제2 플레이트용 절연막(4b)을 샌드위치하여 대향하고, 상기 제2 절연 게이트형 전계 효과 트랜지스터부의 상기 드레인 영역(1) 사이에서 용량을 형성하는, 도전체 또는 반도체로 이루어지는 제2 안정화 플레이트(5b)를 구비하고,상기 제1 절연 게이트형 전계 효과 트랜지스터부는 상기 제1 주면에 형성되고, 상기 제2 절연 게이트형 전계 효과 트랜지스터부는 상기 제2 주면에 형성되고, 상기 제1 및 제2 절연 게이트형 전계 효과 트랜지스터부 사이에서 전류를 흘리는 것을 특징으로 하는 반도체 장치.
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- 채널 형성 영역(2)을 샌드위치하여 상호 대향하는 소스 영역(3) 및 드레인영역(1)과, 상기 채널 형성 영역(2)에 게이트 절연막(4a)을 샌드위치하여 대향하는 게이트 전극(5a)을 갖는 절연 게이트형 전계 효과 트랜지스터부와,상기 드레인 영역(1)에 플레이트용 절연막(4b)을 샌드위치하여 대향하고, 상기 드레인 영역(1)과의 사이에서 용량을 형성하는, 도전체 또는 반도체로 이루어지는 안정화 플레이트(5b)를 구비하고,상기 절연 게이트형 전계 효과 트랜지스터부를 포함하는 셀이 복수개 나란히 배열되어 있고, 배열된 복수의 상기 셀의 종단부에 상기 안정화 플레이트(5b)가 배치되는 반도체 장치.
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Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2001/000373 WO2002058160A1 (fr) | 2001-01-19 | 2001-01-19 | Dispositif a semi-conducteur |
Publications (2)
Publication Number | Publication Date |
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KR20020086655A KR20020086655A (ko) | 2002-11-18 |
KR100447364B1 true KR100447364B1 (ko) | 2004-09-07 |
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KR10-2002-7012304A KR100447364B1 (ko) | 2001-01-19 | 2001-01-19 | 반도체 장치 |
Country Status (7)
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US (2) | US6953968B2 (ko) |
EP (3) | EP2398058B1 (ko) |
JP (1) | JP4785334B2 (ko) |
KR (1) | KR100447364B1 (ko) |
CN (1) | CN1187839C (ko) |
TW (1) | TW484171B (ko) |
WO (1) | WO2002058160A1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100943238B1 (ko) | 2007-06-20 | 2010-02-18 | 미쓰비시덴키 가부시키가이샤 | 반도체 장치 및 그 제조 방법 |
Families Citing this family (95)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6703707B1 (en) * | 1999-11-24 | 2004-03-09 | Denso Corporation | Semiconductor device having radiation structure |
JP4823435B2 (ja) * | 2001-05-29 | 2011-11-24 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
JP3906052B2 (ja) * | 2001-10-15 | 2007-04-18 | 株式会社東芝 | 絶縁ゲート型半導体装置 |
JP4090747B2 (ja) * | 2002-01-31 | 2008-05-28 | 三菱電機株式会社 | 絶縁ゲート型半導体装置 |
US6943426B2 (en) * | 2002-08-14 | 2005-09-13 | Advanced Analogic Technologies, Inc. | Complementary analog bipolar transistors with trench-constrained isolation diffusion |
US6903969B2 (en) * | 2002-08-30 | 2005-06-07 | Micron Technology Inc. | One-device non-volatile random access memory cell |
JP4799829B2 (ja) * | 2003-08-27 | 2011-10-26 | 三菱電機株式会社 | 絶縁ゲート型トランジスタ及びインバータ回路 |
JP2005101334A (ja) * | 2003-09-25 | 2005-04-14 | Sanyo Electric Co Ltd | 半導体装置およびその製造方法 |
JP2005191287A (ja) * | 2003-12-25 | 2005-07-14 | Nec Kyushu Ltd | 半導体装置及びその製造方法 |
JP4829473B2 (ja) * | 2004-01-21 | 2011-12-07 | オンセミコンダクター・トレーディング・リミテッド | 絶縁ゲート型半導体装置およびその製造方法 |
US8110868B2 (en) | 2005-07-27 | 2012-02-07 | Infineon Technologies Austria Ag | Power semiconductor component with a low on-state resistance |
JP5586650B2 (ja) * | 2005-07-27 | 2014-09-10 | インフィネオン テクノロジーズ オーストリア アクチエンゲゼルシャフト | ドリフト領域とドリフト制御領域とを有する半導体素子 |
US8461648B2 (en) | 2005-07-27 | 2013-06-11 | Infineon Technologies Austria Ag | Semiconductor component with a drift region and a drift control region |
US7655977B2 (en) * | 2005-10-18 | 2010-02-02 | International Rectifier Corporation | Trench IGBT for highly capacitive loads |
US8093621B2 (en) * | 2008-12-23 | 2012-01-10 | Power Integrations, Inc. | VTS insulated gate bipolar transistor |
US8368144B2 (en) * | 2006-12-18 | 2013-02-05 | Infineon Technologies Ag | Isolated multigate FET circuit blocks with different ground potentials |
JP2008227251A (ja) * | 2007-03-14 | 2008-09-25 | Mitsubishi Electric Corp | 絶縁ゲート型トランジスタ |
JP2008235788A (ja) * | 2007-03-23 | 2008-10-02 | Sanyo Electric Co Ltd | 絶縁ゲート型半導体装置 |
US7807555B2 (en) * | 2007-07-31 | 2010-10-05 | Intersil Americas, Inc. | Method of forming the NDMOS device body with the reduced number of masks |
JP2009135360A (ja) | 2007-12-03 | 2009-06-18 | Renesas Technology Corp | 半導体装置およびその製造方法 |
DE112008003787B4 (de) | 2008-03-31 | 2015-01-22 | Mitsubishi Electric Corp. | Halbleitervorrichtung |
JP4688901B2 (ja) * | 2008-05-13 | 2011-05-25 | 三菱電機株式会社 | 半導体装置 |
US8093653B2 (en) * | 2008-10-01 | 2012-01-10 | Niko Semiconductor Co., Ltd. | Trench metal oxide-semiconductor transistor and fabrication method thereof |
JP5423018B2 (ja) * | 2009-02-02 | 2014-02-19 | 三菱電機株式会社 | 半導体装置 |
JP5577606B2 (ja) * | 2009-03-02 | 2014-08-27 | 日産自動車株式会社 | 半導体装置 |
DE112009004978B4 (de) * | 2009-04-28 | 2020-06-04 | Mitsubishi Electric Corp. | Leistungshalbleitervorrichtung |
US9048282B2 (en) * | 2013-03-14 | 2015-06-02 | Alpha And Omega Semiconductor Incorporated | Dual-gate trench IGBT with buried floating P-type shield |
JP5634318B2 (ja) | 2011-04-19 | 2014-12-03 | 三菱電機株式会社 | 半導体装置 |
JP5774422B2 (ja) * | 2011-09-14 | 2015-09-09 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2012142628A (ja) * | 2012-04-26 | 2012-07-26 | Mitsubishi Electric Corp | 電力用半導体装置 |
US10411111B2 (en) * | 2012-05-30 | 2019-09-10 | Kyushu Institute Of Technology | Method for fabricating high-voltage insulated gate type bipolar semiconductor device |
JP2014027182A (ja) | 2012-07-27 | 2014-02-06 | Toshiba Corp | 半導体装置 |
JP6284314B2 (ja) | 2012-08-21 | 2018-02-28 | ローム株式会社 | 半導体装置 |
JP6190206B2 (ja) | 2012-08-21 | 2017-08-30 | ローム株式会社 | 半導体装置 |
JP5501539B1 (ja) | 2012-09-13 | 2014-05-21 | パナソニック株式会社 | 半導体装置 |
KR101799258B1 (ko) | 2012-10-02 | 2017-11-20 | 미쓰비시덴키 가부시키가이샤 | 반도체장치 및 반도체장치의 제조방법 |
US8853774B2 (en) * | 2012-11-30 | 2014-10-07 | Infineon Technologies Ag | Semiconductor device including trenches and method of manufacturing a semiconductor device |
WO2014163058A1 (ja) * | 2013-03-31 | 2014-10-09 | 新電元工業株式会社 | 半導体装置 |
US10249721B2 (en) | 2013-04-04 | 2019-04-02 | Infineon Technologies Austria Ag | Semiconductor device including a gate trench and a source trench |
JP6265619B2 (ja) * | 2013-04-17 | 2018-01-24 | 三菱電機株式会社 | 電力用半導体装置およびその製造方法 |
EP3116028B1 (en) | 2013-06-24 | 2021-03-24 | Ideal Power Inc. | Systems, circuits, devices, and methods with bidirectional bipolar transistors |
US9742385B2 (en) | 2013-06-24 | 2017-08-22 | Ideal Power, Inc. | Bidirectional semiconductor switch with passive turnoff |
US9799731B2 (en) | 2013-06-24 | 2017-10-24 | Ideal Power, Inc. | Multi-level inverters using sequenced drive of double-base bidirectional bipolar transistors |
DE102013108518B4 (de) * | 2013-08-07 | 2016-11-24 | Infineon Technologies Ag | Halbleitervorrichtung und verfahren zum herstellen derselben |
US9666663B2 (en) | 2013-08-09 | 2017-05-30 | Infineon Technologies Ag | Semiconductor device with cell trench structures and contacts and method of manufacturing a semiconductor device |
JP6440989B2 (ja) | 2013-08-28 | 2018-12-19 | ローム株式会社 | 半導体装置 |
US9076838B2 (en) | 2013-09-13 | 2015-07-07 | Infineon Technologies Ag | Insulated gate bipolar transistor with mesa sections between cell trench structures and method of manufacturing |
US9385228B2 (en) | 2013-11-27 | 2016-07-05 | Infineon Technologies Ag | Semiconductor device with cell trench structures and contacts and method of manufacturing a semiconductor device |
US9105679B2 (en) | 2013-11-27 | 2015-08-11 | Infineon Technologies Ag | Semiconductor device and insulated gate bipolar transistor with barrier regions |
US11637016B2 (en) | 2013-12-11 | 2023-04-25 | Ideal Power Inc. | Systems and methods for bidirectional device fabrication |
US9355853B2 (en) | 2013-12-11 | 2016-05-31 | Ideal Power Inc. | Systems and methods for bidirectional device fabrication |
KR20160098385A (ko) * | 2014-01-14 | 2016-08-18 | 미쓰비시덴키 가부시키가이샤 | 전력용 반도체 장치 |
US9553179B2 (en) | 2014-01-31 | 2017-01-24 | Infineon Technologies Ag | Semiconductor device and insulated gate bipolar transistor with barrier structure |
JP2015177010A (ja) * | 2014-03-14 | 2015-10-05 | 株式会社東芝 | 半導体装置およびその製造方法 |
JP6226786B2 (ja) | 2014-03-19 | 2017-11-08 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
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EP3155664B1 (en) * | 2014-10-13 | 2019-04-03 | Ideal Power Inc. | Field plates on two opposed surfaces of a double-base bidirectional bipolar transistor; devices and methods for switching |
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EP3186888B1 (en) | 2014-11-06 | 2021-05-05 | Ideal Power Inc. | Circuits, methods, and systems with optimized operation of double-base bipolar junction transistors |
KR101955055B1 (ko) | 2014-11-28 | 2019-03-07 | 매그나칩 반도체 유한회사 | 전력용 반도체 소자 및 그 소자의 제조 방법 |
JP6411929B2 (ja) * | 2015-03-24 | 2018-10-24 | トヨタ自動車株式会社 | Mosfet |
KR101745776B1 (ko) | 2015-05-12 | 2017-06-28 | 매그나칩 반도체 유한회사 | 전력용 반도체 소자 |
US9324807B1 (en) * | 2015-07-10 | 2016-04-26 | United Silicon Carbide, Inc. | Silicon carbide MOSFET with integrated MOS diode |
CN105226090B (zh) * | 2015-11-10 | 2018-07-13 | 株洲中车时代电气股份有限公司 | 一种绝缘栅双极晶体管及其制作方法 |
US9653455B1 (en) * | 2015-11-10 | 2017-05-16 | Analog Devices Global | FET—bipolar transistor combination |
WO2017115434A1 (ja) | 2015-12-28 | 2017-07-06 | 三菱電機株式会社 | 半導体装置、半導体装置の製造方法 |
JP2017120801A (ja) * | 2015-12-28 | 2017-07-06 | 株式会社日立製作所 | 半導体装置およびそれを用いる電力変換装置 |
JP6634860B2 (ja) * | 2016-02-10 | 2020-01-22 | 株式会社デンソー | 半導体装置 |
US20170271445A1 (en) * | 2016-03-18 | 2017-09-21 | Infineon Technologies Americas Corp. | Bipolar Semiconductor Device Having Localized Enhancement Regions |
US9871128B2 (en) | 2016-03-18 | 2018-01-16 | Infineon Technologies Americas Corp. | Bipolar semiconductor device with sub-cathode enhancement regions |
US10164078B2 (en) | 2016-03-18 | 2018-12-25 | Infineon Technologies Americas Corp. | Bipolar semiconductor device with multi-trench enhancement regions |
JP6280148B2 (ja) * | 2016-03-23 | 2018-02-14 | 三菱電機株式会社 | 半導体装置 |
JP6820738B2 (ja) | 2016-12-27 | 2021-01-27 | 三菱電機株式会社 | 半導体装置、電力変換装置および半導体装置の製造方法 |
US10600867B2 (en) | 2017-05-16 | 2020-03-24 | Fuji Electric Co., Ltd. | Semiconductor device having an emitter region and a contact region inside a mesa portion |
CN109891595B (zh) * | 2017-05-31 | 2022-05-24 | 富士电机株式会社 | 半导体装置 |
US10388726B2 (en) * | 2017-10-24 | 2019-08-20 | Semiconductor Components Industries, Llc | Accumulation enhanced insulated gate bipolar transistor (AEGT) and methods of use thereof |
JP6513168B2 (ja) * | 2017-11-29 | 2019-05-15 | 三菱電機株式会社 | 半導体装置 |
CN108122964B (zh) * | 2017-12-22 | 2020-06-16 | 中国科学院微电子研究所 | 一种绝缘栅双极晶体管 |
JP7055052B2 (ja) | 2018-04-05 | 2022-04-15 | 三菱電機株式会社 | 半導体装置および電力変換装置 |
JP6964566B2 (ja) | 2018-08-17 | 2021-11-10 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
CN110943124A (zh) * | 2018-09-25 | 2020-03-31 | 比亚迪股份有限公司 | Igbt芯片及其制造方法 |
JP2021082725A (ja) * | 2019-11-20 | 2021-05-27 | 三菱電機株式会社 | 半導体装置 |
JP7330092B2 (ja) * | 2019-12-25 | 2023-08-21 | 三菱電機株式会社 | 半導体装置 |
US11245016B2 (en) | 2020-01-31 | 2022-02-08 | Alpha And Omega Semiconductor (Cayman) Ltd. | Silicon carbide trench semiconductor device |
JP7442932B2 (ja) * | 2020-03-09 | 2024-03-05 | 三菱電機株式会社 | 半導体装置 |
JP2022073497A (ja) | 2020-11-02 | 2022-05-17 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
WO2022153652A1 (ja) * | 2021-01-12 | 2022-07-21 | ローム株式会社 | 半導体装置 |
US20220262638A1 (en) | 2021-02-16 | 2022-08-18 | Mitsubishi Electric Corporation | Semiconductor device and method of manufacturing semiconductor device |
US11776994B2 (en) | 2021-02-16 | 2023-10-03 | Alpha And Omega Semiconductor International Lp | SiC MOSFET with reduced channel length and high Vth |
WO2024127817A1 (ja) * | 2022-12-16 | 2024-06-20 | 富士電機株式会社 | 炭化珪素mosfetインバータ回路および炭化珪素mosfetインバータ回路の制御方法 |
CN115985943A (zh) * | 2023-03-21 | 2023-04-18 | 晶艺半导体有限公司 | Igbt半导体器件及其制作方法 |
CN115985942A (zh) * | 2023-03-21 | 2023-04-18 | 晶艺半导体有限公司 | 沟槽栅igbt器件和制作方法 |
CN116632059B (zh) * | 2023-07-17 | 2024-04-12 | 湖南大学 | 一种发射极伸入衬底凹槽的igbt芯片 |
CN117476756A (zh) * | 2023-12-28 | 2024-01-30 | 深圳天狼芯半导体有限公司 | 一种具备沟槽发射极的碳化硅igbt及制备方法 |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1200322A (en) | 1982-12-13 | 1986-02-04 | General Electric Company | Bidirectional insulated-gate rectifier structures and method of operation |
JPH0682800B2 (ja) * | 1985-04-16 | 1994-10-19 | 株式会社東芝 | 半導体記憶装置 |
US4994871A (en) | 1988-12-02 | 1991-02-19 | General Electric Company | Insulated gate bipolar transistor with improved latch-up current level and safe operating area |
JPH03109775A (ja) | 1989-09-25 | 1991-05-09 | Hitachi Ltd | 絶縁ゲート型半導体装置 |
US5121176A (en) * | 1990-02-01 | 1992-06-09 | Quigg Fred L | MOSFET structure having reduced gate capacitance |
JP2657134B2 (ja) | 1991-07-25 | 1997-09-24 | 三洋電機株式会社 | ヒンジ装置 |
JP3222692B2 (ja) | 1991-08-08 | 2001-10-29 | 株式会社東芝 | 電力用半導体素子 |
JP2582724Y2 (ja) * | 1991-10-08 | 1998-10-08 | 株式会社明電舎 | 絶縁ゲート型半導体素子 |
JP3307785B2 (ja) * | 1994-12-13 | 2002-07-24 | 三菱電機株式会社 | 絶縁ゲート型半導体装置 |
JP3325736B2 (ja) | 1995-02-09 | 2002-09-17 | 三菱電機株式会社 | 絶縁ゲート型半導体装置 |
JPH08264772A (ja) | 1995-03-23 | 1996-10-11 | Toyota Motor Corp | 電界効果型半導体素子 |
US5714775A (en) * | 1995-04-20 | 1998-02-03 | Kabushiki Kaisha Toshiba | Power semiconductor device |
US5973367A (en) * | 1995-10-13 | 1999-10-26 | Siliconix Incorporated | Multiple gated MOSFET for use in DC-DC converter |
US6040599A (en) | 1996-03-12 | 2000-03-21 | Mitsubishi Denki Kabushiki Kaisha | Insulated trench semiconductor device with particular layer structure |
JP3257394B2 (ja) | 1996-04-04 | 2002-02-18 | 株式会社日立製作所 | 電圧駆動型半導体装置 |
US5895951A (en) * | 1996-04-05 | 1999-04-20 | Megamos Corporation | MOSFET structure and fabrication process implemented by forming deep and narrow doping regions through doping trenches |
DE19651108C2 (de) * | 1996-04-11 | 2000-11-23 | Mitsubishi Electric Corp | Halbleitereinrichtung des Gategrabentyps mit hoher Durchbruchsspannung und ihr Herstellungsverfahren |
JPH09331063A (ja) | 1996-04-11 | 1997-12-22 | Mitsubishi Electric Corp | 高耐圧半導体装置およびその製造方法 |
JPH09283754A (ja) | 1996-04-16 | 1997-10-31 | Toshiba Corp | 高耐圧半導体装置 |
JP3719323B2 (ja) | 1997-03-05 | 2005-11-24 | 株式会社デンソー | 炭化珪素半導体装置 |
JP3371763B2 (ja) | 1997-06-24 | 2003-01-27 | 株式会社日立製作所 | 炭化けい素半導体装置 |
US6191470B1 (en) * | 1997-07-08 | 2001-02-20 | Micron Technology, Inc. | Semiconductor-on-insulator memory cell with buried word and body lines |
US6020024A (en) * | 1997-08-04 | 2000-02-01 | Motorola, Inc. | Method for forming high dielectric constant metal oxides |
US6396102B1 (en) * | 1998-01-27 | 2002-05-28 | Fairchild Semiconductor Corporation | Field coupled power MOSFET bus architecture using trench technology |
JP2000040951A (ja) * | 1998-05-18 | 2000-02-08 | Toshiba Corp | 半導体素子、その駆動方法及び駆動装置 |
JP3400348B2 (ja) | 1998-05-19 | 2003-04-28 | 株式会社東芝 | 絶縁ゲート型半導体装置 |
EP1835542A3 (en) * | 1999-09-30 | 2007-10-03 | Kabushiki Kaisha Toshiba | Semiconductor device with trench gate |
-
2001
- 2001-01-19 EP EP11173885.2A patent/EP2398058B1/en not_active Expired - Lifetime
- 2001-01-19 JP JP2002558343A patent/JP4785334B2/ja not_active Expired - Lifetime
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- 2001-01-19 US US10/221,273 patent/US6953968B2/en not_active Expired - Lifetime
- 2001-01-19 WO PCT/JP2001/000373 patent/WO2002058160A1/ja active IP Right Grant
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- 2001-01-19 CN CNB018068618A patent/CN1187839C/zh not_active Expired - Lifetime
- 2001-01-20 TW TW090101502A patent/TW484171B/zh not_active IP Right Cessation
-
2005
- 2005-08-16 US US11/204,048 patent/US7115944B2/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100943238B1 (ko) | 2007-06-20 | 2010-02-18 | 미쓰비시덴키 가부시키가이샤 | 반도체 장치 및 그 제조 방법 |
US7955930B2 (en) | 2007-06-20 | 2011-06-07 | Mitsubishi Electric Corporation | Semiconductor device and manufacturing method thereof |
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US7115944B2 (en) | 2006-10-03 |
JP4785334B2 (ja) | 2011-10-05 |
EP2398058B1 (en) | 2016-09-07 |
WO2002058160A1 (fr) | 2002-07-25 |
KR20020086655A (ko) | 2002-11-18 |
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US20050280029A1 (en) | 2005-12-22 |
EP2398058A2 (en) | 2011-12-21 |
EP1353385A1 (en) | 2003-10-15 |
EP1353385A4 (en) | 2007-12-26 |
EP1353385B1 (en) | 2014-09-24 |
EP2398058A3 (en) | 2011-12-28 |
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