JPWO2007060784A1 - 回路モジュールの製造方法および回路モジュール - Google Patents
回路モジュールの製造方法および回路モジュール Download PDFInfo
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Abstract
Description
図13は特許文献1に示された回路モジュールの製造工程の一例である。
まず集合基板状態の多層配線基板70を準備し(a)、この配線基板70に対してはんだまたは導電性接着剤71を印刷し(b)、回路部品72を実装し(c)、絶縁樹脂層73を形成し(d)、上面にシールド層74を形成した後、熱処理にて絶縁樹脂層73を硬化させ(e)、隣接する子基板との境界部において配線基板70上のグランド電極75が露出する高さまで絶縁樹脂層73に切断溝76を設け(f)、切断溝76に導電性物質77を充填して熱硬化させ(g)、その後で切断溝76にそって切断溝76の幅より薄いブレードで切断することで、個片化するものである。
また、特許文献1の場合のように切断溝の深さを配線基板の表面に形成されたグランド電極が露出する高さに正確に一致させるのは容易ではなく、グランド電極を傷つけたり、切断してしまう可能性があり、生産性を低下させる原因となる。
Claims (13)
- 子基板を集合してなる集合基板状態のモジュール基板を準備する工程と、
上記モジュール基板上に回路部品を実装する工程と、
上記回路部品を包み込むように上記モジュール基板の上面全面に絶縁樹脂層を形成する工程と、
絶縁樹脂層の上面に第1シールド層を形成する工程と、
上記モジュール基板および絶縁樹脂層の子基板境界線の一部に、厚み方向に延びる第1の貫通穴を形成する工程と、
上記第1の貫通穴の内面に第1シールド層と接続された第1電極膜を形成する工程と、
上記第1の貫通穴に充填材を充填する工程と、
上記モジュール基板および絶縁樹脂層の子基板境界線の残部に、厚み方向に延びる第2の貫通穴を形成する工程と、
上記第2の貫通穴の内面に第1シールド層および上記第1電極膜と接続された第2電極膜を形成する工程と、
上記第1の貫通穴に充填された充填材を子基板境界線に沿って切断し、子基板に分割する工程と、を含む回路モジュールの製造方法。 - 子基板を集合してなる集合基板状態のモジュール基板を準備する工程と、
上記モジュール基板上に回路部品を実装する工程と、
上記回路部品を包み込むように上記モジュール基板の上面全面に絶縁樹脂層を形成する工程と、
絶縁樹脂層の上面に第1シールド層を形成する工程と、
上記モジュール基板および絶縁樹脂層の子基板境界線の一部に、厚み方向に延びる第1の貫通穴を形成する工程と、
上記第1の貫通穴に導電性の充填材を充填する工程と、
上記モジュール基板および絶縁樹脂層の子基板境界線の残部に、厚み方向に延びる第2の貫通穴を形成する工程と、
上記第2の貫通穴の内面に第1シールド層および上記導電性の充填材と接続された電極膜を形成する工程と、
上記第1の貫通穴に充填された導電性の充填材を子基板境界線に沿って切断し、子基板に分割する工程と、を含む回路モジュールの製造方法。 - 上記第1の貫通穴は上記子基板の4つのコーナー部に相当する箇所に形成され、
上記第2の貫通穴は、上記子基板の4つの辺に相当する箇所に形成される請求項1または2に記載の回路モジュールの製造方法。 - 上記第1の貫通穴は上記子基板の対向する2辺に相当する箇所に形成され、
上記第2の貫通穴は、上記子基板の他の2辺に相当する箇所に形成される請求項1または2に記載の回路モジュールの製造方法。 - 上記電極膜はめっきにより形成されたものである請求項1ないし4のいずれか1項に記載の回路モジュールの製造方法。
- 上記充填材は熱硬化性樹脂を含むものである請求項1ないし5のいずれか1項に記載の回路モジュールの製造方法。
- 表面に回路部品を搭載したモジュール基板と、
上記回路部品を包み込むように上記モジュール基板の上面全面に形成された絶縁樹脂層と、
上記絶縁樹脂層の上面に形成された第1シールド層と、
上記モジュール基板および上記絶縁樹脂層の側面全面に連続的に形成され、上端部が上記第1シールド層と接続された第2シールド層と、
上記モジュール基板および絶縁樹脂層の4つのコーナー部に形成され、厚み方向に延びる凹溝と、
上記凹溝の内面に形成され、上記第2シールド層の一部を構成する電極膜と、
上記凹溝に充填され、上記電極膜を被覆する充填材と、を備えることを特徴とする回路モジュール。 - 表面に回路部品を搭載したモジュール基板と、
上記回路部品を包み込むように上記モジュール基板の上面全面に形成された絶縁樹脂層と、
上記絶縁樹脂層の上面に形成された第1シールド層と、
上記モジュール基板および上記絶縁樹脂層の側面全面に連続的に形成され、上端部が上記第1シールド層と接続された第2シールド層と、
上記モジュール基板および絶縁樹脂層の対向する2辺の側面に露出し、上記第2シールド層の一部を構成する電極膜と、
上記2辺以外の2辺の側面に形成され、上記第2シールド層の他部を構成する電極膜と、
該電極膜を被覆する充填材と、を備えることを特徴とする回路モジュール。 - 表面に回路部品を搭載したモジュール基板と、
上記回路部品を包み込むように上記モジュール基板の上面全面に形成された絶縁樹脂層と、
上記絶縁樹脂層の上面に形成された第1シールド層と、
上記モジュール基板および上記絶縁樹脂層の側面全面に連続的に形成され、上端部が上記第1シールド層と接続された第2シールド層と、
上記モジュール基板および絶縁樹脂層の4つのコーナー部に形成され、厚み方向に延びる凹溝と、
上記凹溝に充填され、上記第2シールド層の一部を構成する導電性の充填材と、を備えることを特徴とする回路モジュール。 - 表面に回路部品を搭載したモジュール基板と、
上記回路部品を包み込むように上記モジュール基板の上面全面に形成された絶縁樹脂層と、
上記絶縁樹脂層の上面に形成された第1シールド層と、
上記モジュール基板および上記絶縁樹脂層の側面全面に連続的に形成され、上端部が上記第1シールド層と接続された第2シールド層と、
上記モジュール基板および絶縁樹脂層の対向する2辺の側面に露出し、上記第2シールド層の一部を構成する電極膜と、
上記2辺以外の2辺の側面に被覆され、上記第2シールド層の他部を構成する導電性の充填材と、を備えることを特徴とする回路モジュール。 - 上記モジュール基板の下面にグランド端子電極が形成され、
上記第2シールド層の下端部が上記グランド端子電極と接続されていることを特徴とする請求項7ないし10のいずれか1項に記載の回路モジュール。 - 上記電極膜はめっきにより形成されたものである請求項7ないし11のいずれか1項に記載の回路モジュール。
- 上記充填材は熱硬化性樹脂を含むものである請求項7ないし12のいずれか1項に記載の回路モジュール。
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KR20220000538A (ko) | 2020-06-26 | 2022-01-04 | 삼성전자주식회사 | 반도체 모듈 |
WO2022168478A1 (ja) * | 2021-02-05 | 2022-08-11 | 株式会社村田製作所 | モジュール |
CN113691230B (zh) * | 2021-08-25 | 2023-11-28 | 北京超材信息科技有限公司 | 声学装置封装结构 |
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WO2007060784A1 (ja) | 2007-05-31 |
US7488903B2 (en) | 2009-02-10 |
JP4816647B2 (ja) | 2011-11-16 |
CN101300911A (zh) | 2008-11-05 |
US20080210462A1 (en) | 2008-09-04 |
CN101300911B (zh) | 2010-10-27 |
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