JPS5444482A - Mos type semiconductor device and its manufacture - Google Patents

Mos type semiconductor device and its manufacture

Info

Publication number
JPS5444482A
JPS5444482A JP11072477A JP11072477A JPS5444482A JP S5444482 A JPS5444482 A JP S5444482A JP 11072477 A JP11072477 A JP 11072477A JP 11072477 A JP11072477 A JP 11072477A JP S5444482 A JPS5444482 A JP S5444482A
Authority
JP
Japan
Prior art keywords
film
gate
drain
source
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11072477A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6231506B2 (cs
Inventor
Takeya Ezaki
Onori Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP11072477A priority Critical patent/JPS5444482A/ja
Publication of JPS5444482A publication Critical patent/JPS5444482A/ja
Publication of JPS6231506B2 publication Critical patent/JPS6231506B2/ja
Priority to JP2206101A priority patent/JPH03129740A/ja
Priority to JP2206100A priority patent/JPH03129741A/ja
Granted legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
JP11072477A 1977-09-14 1977-09-14 Mos type semiconductor device and its manufacture Granted JPS5444482A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP11072477A JPS5444482A (en) 1977-09-14 1977-09-14 Mos type semiconductor device and its manufacture
JP2206101A JPH03129740A (ja) 1977-09-14 1990-08-02 Ｍｏｓ型半導体装置の製造方法
JP2206100A JPH03129741A (ja) 1977-09-14 1990-08-02 Ｍｏｓ型半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11072477A JPS5444482A (en) 1977-09-14 1977-09-14 Mos type semiconductor device and its manufacture

Related Child Applications (3)

Application Number Title Priority Date Filing Date
JP63124323A Division JPH0618214B2 (ja) 1988-05-20 1988-05-20 Ｍｏｓ型半導体装置の製造方法
JP2206101A Division JPH03129740A (ja) 1977-09-14 1990-08-02 Ｍｏｓ型半導体装置の製造方法
JP2206100A Division JPH03129741A (ja) 1977-09-14 1990-08-02 Ｍｏｓ型半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5444482A true JPS5444482A (en) 1979-04-07
JPS6231506B2 JPS6231506B2 (cs) 1987-07-08

Family

ID=14542873

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11072477A Granted JPS5444482A (en) 1977-09-14 1977-09-14 Mos type semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPS5444482A (cs)

Cited By (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5563844A (en) * 1978-11-03 1980-05-14 Ibm Method of forming insulator between conductive layers
JPS5621369A (en) * 1979-07-31 1981-02-27 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor
JPS56144553A (en) * 1980-04-11 1981-11-10 Hitachi Ltd Manufacture of semiconductor device
JPS5799775A (en) * 1980-12-12 1982-06-21 Toshiba Corp Manufacture of semiconductor device
JPS57106169A (en) * 1980-12-24 1982-07-01 Fujitsu Ltd Manufacture of semiconductor device
JPS57143846A (en) * 1981-02-27 1982-09-06 Fujitsu Ltd Formation of multi-layer wiring compostion
JPS587867A (ja) * 1981-07-07 1983-01-17 Nec Corp 半導体装置の製造方法
JPS5818965A (ja) * 1981-07-28 1983-02-03 Toshiba Corp 半導体装置の製造方法
JPS5830161A (ja) * 1981-08-17 1983-02-22 Toshiba Corp Ｍｉｓ型半導体装置の製造方法
JPS58147071A (ja) * 1981-12-16 1983-09-01 ソーン、イーエムアイ、ノース、アメリカ、インコーポレーテッド Ｍｏｓ半導体装置の製造方法
JPS595645A (ja) * 1982-07-01 1984-01-12 Fujitsu Ltd 半導体装置の製造方法
JPS5933829A (ja) * 1982-08-20 1984-02-23 Hitachi Ltd 半導体装置の製造方法
JPS5946084A (ja) * 1982-09-09 1984-03-15 Mitsubishi Electric Corp 電界効果型トランジスタおよびその製造方法
JPS5951587A (ja) * 1982-09-17 1984-03-26 Mitsubishi Electric Corp Ｍｏｓ電界効果型トランジスタの製造方法
JPS5952878A (ja) * 1982-09-20 1984-03-27 Fujitsu Ltd 半導体装置の製造方法
JPS5961071A (ja) * 1982-08-30 1984-04-07 テキサス・インスツルメンツ・インコ−ポレイテツド 絶縁ゲ−ト型電界効果トランジスタとその製造方法
JPS5961182A (ja) * 1982-09-30 1984-04-07 Toshiba Corp 半導体装置の製造方法
JPS5972759A (ja) * 1982-10-20 1984-04-24 Toshiba Corp 半導体装置の製造方法
JPS59154040A (ja) * 1983-02-22 1984-09-03 Toshiba Corp 半導体装置の製造方法
JPS59210660A (ja) * 1983-02-23 1984-11-29 テキサス・インスツルメンツ・インコ−ポレイテツド Ｃｍｏｓ装置の製造方法
JPS6028272A (ja) * 1983-07-27 1985-02-13 Toshiba Corp 半導体装置
JPS6059777A (ja) * 1983-09-13 1985-04-06 Nec Corp 半導体装置の製造方法
JPS60121771A (ja) * 1984-11-09 1985-06-29 Hitachi Ltd 半導体装置
JPS60231340A (ja) * 1984-04-27 1985-11-16 Sony Corp 半導体装置の製法
JPS6110278A (ja) * 1984-06-26 1986-01-17 Nec Corp Ｍｏｓ型半導体装置及びその製造方法
JPS6119176A (ja) * 1984-07-06 1986-01-28 Toshiba Corp 半導体装置の製造方法
JPS6142960A (ja) * 1984-08-07 1986-03-01 Toshiba Corp 半導体装置の製造方法
JPS6185823A (ja) * 1984-10-03 1986-05-01 Nec Corp 半導体装置
JPS61123181A (ja) * 1984-11-15 1986-06-11 Fujitsu Ltd 半導体装置の製造方法
JPS61183954A (ja) * 1985-02-08 1986-08-16 Toshiba Corp 読み出し専用半導体記憶装置の製造方法
JPS61183967A (ja) * 1985-02-08 1986-08-16 Toshiba Corp 半導体装置の製造方法
JPS61183953A (ja) * 1985-02-08 1986-08-16 Toshiba Corp 読み出し専用半導体記憶装置
JPS6237960A (ja) * 1985-08-13 1987-02-18 Toshiba Corp 読み出し専用半導体記憶装置の製造方法
JPS6237961A (ja) * 1985-08-13 1987-02-18 Toshiba Corp 読み出し専用半導体記憶装置
JPS6240765A (ja) * 1985-08-15 1987-02-21 Toshiba Corp 読み出し専用半導体記憶装置およびその製造方法
JPS6240763A (ja) * 1985-08-15 1987-02-21 Toshiba Corp 読み出し専用半導体記憶装置およびその製造方法
JPS6240764A (ja) * 1985-08-15 1987-02-21 Toshiba Corp 読み出し専用半導体記憶装置およびその製造方法
JPS6323361A (ja) * 1986-06-30 1988-01-30 Oki Electric Ind Co Ltd Ｍｉｓ型電界効果トランジスタの製造方法
JPS6432650A (en) * 1988-04-01 1989-02-02 Hitachi Ltd Manufacture of semiconductor device
JPH01103874A (ja) * 1988-05-20 1989-04-20 Matsushita Electric Ind Co Ltd Ｍｏｓ型半導体装置およびその製造方法
US5061649A (en) * 1986-03-31 1991-10-29 Kabushiki Kaisha Toshiba Field effect transistor with lightly doped drain structure and method for manufacturing the same
JPH04118966A (ja) * 1980-12-17 1992-04-20 Internatl Business Mach Corp <Ibm> メモリ用ｍｏｓ　ｆｅｔ集積回路の製造方法
JPH04354137A (ja) * 1991-05-31 1992-12-08 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5202574A (en) * 1980-05-02 1993-04-13 Texas Instruments Incorporated Semiconductor having improved interlevel conductor insulation
JPH05160146A (ja) * 1991-12-05 1993-06-25 Sharp Corp 半導体装置の製造方法
US5518945A (en) * 1995-05-05 1996-05-21 International Business Machines Corporation Method of making a diffused lightly doped drain device with built in etch stop
US5675168A (en) * 1994-04-01 1997-10-07 Matsushita Electric Industrial Co., Ltd. Unsymmetrical MOS device having a gate insulator area offset from the source and drain areas, and ESD protection circuit including such a MOS device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5283073A (en) * 1975-12-29 1977-07-11 Matsushita Electric Ind Co Ltd Production of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5283073A (en) * 1975-12-29 1977-07-11 Matsushita Electric Ind Co Ltd Production of semiconductor device

Cited By (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5563844A (en) * 1978-11-03 1980-05-14 Ibm Method of forming insulator between conductive layers
JPS5621369A (en) * 1979-07-31 1981-02-27 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor
JPS56144553A (en) * 1980-04-11 1981-11-10 Hitachi Ltd Manufacture of semiconductor device
US5202574A (en) * 1980-05-02 1993-04-13 Texas Instruments Incorporated Semiconductor having improved interlevel conductor insulation
JPS5799775A (en) * 1980-12-12 1982-06-21 Toshiba Corp Manufacture of semiconductor device
JPH04118966A (ja) * 1980-12-17 1992-04-20 Internatl Business Mach Corp <Ibm> メモリ用ｍｏｓ　ｆｅｔ集積回路の製造方法
JPH04180673A (ja) * 1980-12-17 1992-06-26 Internatl Business Mach Corp <Ibm> メモリ用ｍｏｓ　ｆｅｔ集積回路の製造方法
JPS57106169A (en) * 1980-12-24 1982-07-01 Fujitsu Ltd Manufacture of semiconductor device
JPS57143846A (en) * 1981-02-27 1982-09-06 Fujitsu Ltd Formation of multi-layer wiring compostion
JPS587867A (ja) * 1981-07-07 1983-01-17 Nec Corp 半導体装置の製造方法
JPS5818965A (ja) * 1981-07-28 1983-02-03 Toshiba Corp 半導体装置の製造方法
JPS5830161A (ja) * 1981-08-17 1983-02-22 Toshiba Corp Ｍｉｓ型半導体装置の製造方法
JPS58147071A (ja) * 1981-12-16 1983-09-01 ソーン、イーエムアイ、ノース、アメリカ、インコーポレーテッド Ｍｏｓ半導体装置の製造方法
JPS595645A (ja) * 1982-07-01 1984-01-12 Fujitsu Ltd 半導体装置の製造方法
JPS5933829A (ja) * 1982-08-20 1984-02-23 Hitachi Ltd 半導体装置の製造方法
JPS5961071A (ja) * 1982-08-30 1984-04-07 テキサス・インスツルメンツ・インコ−ポレイテツド 絶縁ゲ−ト型電界効果トランジスタとその製造方法
JPS5946084A (ja) * 1982-09-09 1984-03-15 Mitsubishi Electric Corp 電界効果型トランジスタおよびその製造方法
JPS5951587A (ja) * 1982-09-17 1984-03-26 Mitsubishi Electric Corp Ｍｏｓ電界効果型トランジスタの製造方法
JPS5952878A (ja) * 1982-09-20 1984-03-27 Fujitsu Ltd 半導体装置の製造方法
JPS5961182A (ja) * 1982-09-30 1984-04-07 Toshiba Corp 半導体装置の製造方法
JPS5972759A (ja) * 1982-10-20 1984-04-24 Toshiba Corp 半導体装置の製造方法
JPS59154040A (ja) * 1983-02-22 1984-09-03 Toshiba Corp 半導体装置の製造方法
JPS59210660A (ja) * 1983-02-23 1984-11-29 テキサス・インスツルメンツ・インコ−ポレイテツド Ｃｍｏｓ装置の製造方法
JPH02125465A (ja) * 1983-02-23 1990-05-14 Texas Instr Inc <Ti> Ｃｍｏｓ装置の製造方法
JPS6028272A (ja) * 1983-07-27 1985-02-13 Toshiba Corp 半導体装置
JPS6059777A (ja) * 1983-09-13 1985-04-06 Nec Corp 半導体装置の製造方法
JPS60231340A (ja) * 1984-04-27 1985-11-16 Sony Corp 半導体装置の製法
JPS6110278A (ja) * 1984-06-26 1986-01-17 Nec Corp Ｍｏｓ型半導体装置及びその製造方法
JPS6119176A (ja) * 1984-07-06 1986-01-28 Toshiba Corp 半導体装置の製造方法
JPS6142960A (ja) * 1984-08-07 1986-03-01 Toshiba Corp 半導体装置の製造方法
JPS6185823A (ja) * 1984-10-03 1986-05-01 Nec Corp 半導体装置
JPS60121771A (ja) * 1984-11-09 1985-06-29 Hitachi Ltd 半導体装置
JPS61123181A (ja) * 1984-11-15 1986-06-11 Fujitsu Ltd 半導体装置の製造方法
JPS61183954A (ja) * 1985-02-08 1986-08-16 Toshiba Corp 読み出し専用半導体記憶装置の製造方法
JPS61183967A (ja) * 1985-02-08 1986-08-16 Toshiba Corp 半導体装置の製造方法
JPS61183953A (ja) * 1985-02-08 1986-08-16 Toshiba Corp 読み出し専用半導体記憶装置
JPS6237961A (ja) * 1985-08-13 1987-02-18 Toshiba Corp 読み出し専用半導体記憶装置
JPS6237960A (ja) * 1985-08-13 1987-02-18 Toshiba Corp 読み出し専用半導体記憶装置の製造方法
JPS6240764A (ja) * 1985-08-15 1987-02-21 Toshiba Corp 読み出し専用半導体記憶装置およびその製造方法
JPS6240763A (ja) * 1985-08-15 1987-02-21 Toshiba Corp 読み出し専用半導体記憶装置およびその製造方法
JPS6240765A (ja) * 1985-08-15 1987-02-21 Toshiba Corp 読み出し専用半導体記憶装置およびその製造方法
US5061649A (en) * 1986-03-31 1991-10-29 Kabushiki Kaisha Toshiba Field effect transistor with lightly doped drain structure and method for manufacturing the same
JPS6323361A (ja) * 1986-06-30 1988-01-30 Oki Electric Ind Co Ltd Ｍｉｓ型電界効果トランジスタの製造方法
JPS6432650A (en) * 1988-04-01 1989-02-02 Hitachi Ltd Manufacture of semiconductor device
JPH01103874A (ja) * 1988-05-20 1989-04-20 Matsushita Electric Ind Co Ltd Ｍｏｓ型半導体装置およびその製造方法
JPH04354137A (ja) * 1991-05-31 1992-12-08 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH05160146A (ja) * 1991-12-05 1993-06-25 Sharp Corp 半導体装置の製造方法
US5675168A (en) * 1994-04-01 1997-10-07 Matsushita Electric Industrial Co., Ltd. Unsymmetrical MOS device having a gate insulator area offset from the source and drain areas, and ESD protection circuit including such a MOS device
US5518945A (en) * 1995-05-05 1996-05-21 International Business Machines Corporation Method of making a diffused lightly doped drain device with built in etch stop

Also Published As

Publication number Publication date
JPS6231506B2 (cs) 1987-07-08

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