JPS6432650A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6432650A JPS6432650A JP7801188A JP7801188A JPS6432650A JP S6432650 A JPS6432650 A JP S6432650A JP 7801188 A JP7801188 A JP 7801188A JP 7801188 A JP7801188 A JP 7801188A JP S6432650 A JPS6432650 A JP S6432650A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- etching
- onto
- arrow
- self
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To form an insulating film having excellent characteristics in a self- alignment manner by shaping a second insulating film to the side sections of a first conductive film and an insulating film by using anisotropic etching and forming a second conductive film onto the whole surface. CONSTITUTION:The stratified pattern of an electrode wiring 2a and an insulating film 3a is shaped onto a desired substrate 1a, and an insulating film 3b is applied onto the whole surface. When the insulating film 3b is etched by using a dry etching method such as a reactive sputtering etching method, etching selectively progresses in the vertical direction (the arrow Y), and does not progress in the lateral direction (the arrow X). Consequently, when etching is stopped when the surface of the substrate 1a is exposed, the top face of the electrode wiring 2a can be coated with the insulating film 3a and a side face thereof with the insulating film 3b selectively in a self-alignment manner. Accordingly, a memory cell can be fined.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7801188A JPS6432650A (en) | 1988-04-01 | 1988-04-01 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7801188A JPS6432650A (en) | 1988-04-01 | 1988-04-01 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6432650A true JPS6432650A (en) | 1989-02-02 |
JPH0573348B2 JPH0573348B2 (en) | 1993-10-14 |
Family
ID=13649849
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7801188A Granted JPS6432650A (en) | 1988-04-01 | 1988-04-01 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6432650A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5444482A (en) * | 1977-09-14 | 1979-04-07 | Matsushita Electric Ind Co Ltd | Mos type semiconductor device and its manufacture |
-
1988
- 1988-04-01 JP JP7801188A patent/JPS6432650A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5444482A (en) * | 1977-09-14 | 1979-04-07 | Matsushita Electric Ind Co Ltd | Mos type semiconductor device and its manufacture |
Also Published As
Publication number | Publication date |
---|---|
JPH0573348B2 (en) | 1993-10-14 |
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