JPH11261008A5 - - Google Patents

Info

Publication number
JPH11261008A5
JPH11261008A5 JP1998059620A JP5962098A JPH11261008A5 JP H11261008 A5 JPH11261008 A5 JP H11261008A5 JP 1998059620 A JP1998059620 A JP 1998059620A JP 5962098 A JP5962098 A JP 5962098A JP H11261008 A5 JPH11261008 A5 JP H11261008A5
Authority
JP
Japan
Prior art keywords
region
inductance element
semiconductor substrate
substrate
insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998059620A
Other languages
English (en)
Japanese (ja)
Other versions
JP3942264B2 (ja
JPH11261008A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP05962098A external-priority patent/JP3942264B2/ja
Priority to JP05962098A priority Critical patent/JP3942264B2/ja
Priority to US09/175,975 priority patent/US6225677B1/en
Priority to TW087117512A priority patent/TW401639B/zh
Priority to KR1019980044696A priority patent/KR100334041B1/ko
Priority to FR9814825A priority patent/FR2776128B1/fr
Publication of JPH11261008A publication Critical patent/JPH11261008A/ja
Priority to US09/791,859 priority patent/US20010040270A1/en
Priority to US10/163,367 priority patent/US6879022B2/en
Publication of JPH11261008A5 publication Critical patent/JPH11261008A5/ja
Publication of JP3942264B2 publication Critical patent/JP3942264B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP05962098A 1998-03-11 1998-03-11 半導体基板上に形成されるインダクタンス素子 Expired - Fee Related JP3942264B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP05962098A JP3942264B2 (ja) 1998-03-11 1998-03-11 半導体基板上に形成されるインダクタンス素子
US09/175,975 US6225677B1 (en) 1998-03-11 1998-10-21 Inductance device formed on semiconductor substrate
TW087117512A TW401639B (en) 1998-03-11 1998-10-22 Inductance: device formed on semiconductor substrate
KR1019980044696A KR100334041B1 (ko) 1998-03-11 1998-10-24 반도체기판상에형성되는인덕턴스소자
FR9814825A FR2776128B1 (fr) 1998-03-11 1998-11-25 Dispositif a inductance forme sur un substrat semiconducteur
US09/791,859 US20010040270A1 (en) 1998-03-11 2001-02-26 Inductance device formed on semiconductor substrate
US10/163,367 US6879022B2 (en) 1998-03-11 2002-06-07 Inductance device formed on semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP05962098A JP3942264B2 (ja) 1998-03-11 1998-03-11 半導体基板上に形成されるインダクタンス素子

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2005068567A Division JP4230468B2 (ja) 2005-03-11 2005-03-11 半導体基板上に形成されるインダクタンス素子
JP2006276864A Division JP2007005835A (ja) 2006-10-10 2006-10-10 半導体基板状に形成されるインダクタンス素子

Publications (3)

Publication Number Publication Date
JPH11261008A JPH11261008A (ja) 1999-09-24
JPH11261008A5 true JPH11261008A5 (enExample) 2005-09-02
JP3942264B2 JP3942264B2 (ja) 2007-07-11

Family

ID=13118479

Family Applications (1)

Application Number Title Priority Date Filing Date
JP05962098A Expired - Fee Related JP3942264B2 (ja) 1998-03-11 1998-03-11 半導体基板上に形成されるインダクタンス素子

Country Status (5)

Country Link
US (3) US6225677B1 (enExample)
JP (1) JP3942264B2 (enExample)
KR (1) KR100334041B1 (enExample)
FR (1) FR2776128B1 (enExample)
TW (1) TW401639B (enExample)

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FR2846792A1 (fr) * 2002-10-30 2004-05-07 Commissariat Energie Atomique Composant microelectrique radiofrequence et procede de realisation
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US7786836B2 (en) * 2005-07-19 2010-08-31 Lctank Llc Fabrication of inductors in transformer based tank circuitry
US7250826B2 (en) * 2005-07-19 2007-07-31 Lctank Llc Mutual inductance in transformer based tank circuitry
US7511588B2 (en) * 2005-07-19 2009-03-31 Lctank Llc Flux linked LC tank circuits forming distributed clock networks
US7279426B2 (en) * 2005-09-22 2007-10-09 International Business Machines Corporation Like integrated circuit devices with different depth
JP4647484B2 (ja) * 2005-12-27 2011-03-09 ルネサスエレクトロニクス株式会社 半導体装置
US7402890B2 (en) * 2006-06-02 2008-07-22 International Business Machines Corporation Method for symmetric capacitor formation
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US7948055B2 (en) * 2006-08-31 2011-05-24 United Microelectronics Corp. Inductor formed on semiconductor substrate
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KR101121645B1 (ko) * 2010-03-22 2012-02-28 삼성전기주식회사 평면형 트랜스포머
TWI498928B (zh) * 2010-08-04 2015-09-01 立積電子股份有限公司 螺旋電感元件
CN102376700A (zh) * 2010-08-04 2012-03-14 立积电子股份有限公司 电子组件及其制法、螺旋电感组件及其制法
US8686539B1 (en) * 2010-10-15 2014-04-01 Xilinx, Inc. Inductor having a deep-well noise isolation shield
WO2012121724A1 (en) * 2011-03-09 2012-09-13 Hewlett-Packard Development Company, L.P. Flat power coil for wireless charging applications
CN102522385A (zh) * 2011-12-30 2012-06-27 上海集成电路研发中心有限公司 片上集成铜电感
US8878334B1 (en) * 2012-03-23 2014-11-04 Altera Corporation Integrated circuit resistors with reduced parasitic capacitance
JP6057534B2 (ja) * 2012-04-18 2017-01-11 住重試験検査株式会社 半導体装置の製造方法
CN103474414B (zh) * 2012-06-06 2016-03-16 中芯国际集成电路制造(上海)有限公司 电感及其形成方法
JP5719000B2 (ja) * 2013-09-17 2015-05-13 学校法人慶應義塾 集積回路装置
JP6375872B2 (ja) * 2014-10-29 2018-08-22 住友電気工業株式会社 超電導マグネットおよび超電導機器
TWI587329B (zh) * 2014-10-31 2017-06-11 台灣東電化股份有限公司 無線充電印刷電路板線圈結構
JP7056016B2 (ja) * 2017-06-13 2022-04-19 Tdk株式会社 コイル部品
JP7169871B2 (ja) * 2018-12-26 2022-11-11 住重アテックス株式会社 半導体装置の製造方法
JP7430376B2 (ja) * 2019-12-19 2024-02-13 三安ジャパンテクノロジー株式会社 スパイラルインダクタ及びパッシブ集積回路
KR20220102772A (ko) 2021-01-14 2022-07-21 주식회사 삼주유니콘 환봉의 길이 조절장치
CN113745404A (zh) * 2021-08-25 2021-12-03 中国科学院微电子研究所 螺旋电感的制备方法、螺旋电感及无源器件模块

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