FR2776128B1 - Dispositif a inductance forme sur un substrat semiconducteur - Google Patents

Dispositif a inductance forme sur un substrat semiconducteur

Info

Publication number
FR2776128B1
FR2776128B1 FR9814825A FR9814825A FR2776128B1 FR 2776128 B1 FR2776128 B1 FR 2776128B1 FR 9814825 A FR9814825 A FR 9814825A FR 9814825 A FR9814825 A FR 9814825A FR 2776128 B1 FR2776128 B1 FR 2776128B1
Authority
FR
France
Prior art keywords
semiconductor substrate
device formed
inductance device
inductance
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9814825A
Other languages
English (en)
French (fr)
Other versions
FR2776128A1 (fr
Inventor
Osamu Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of FR2776128A1 publication Critical patent/FR2776128A1/fr
Application granted granted Critical
Publication of FR2776128B1 publication Critical patent/FR2776128B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/20—Inductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/0006—Printed inductances
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
FR9814825A 1998-03-11 1998-11-25 Dispositif a inductance forme sur un substrat semiconducteur Expired - Fee Related FR2776128B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP05962098A JP3942264B2 (ja) 1998-03-11 1998-03-11 半導体基板上に形成されるインダクタンス素子

Publications (2)

Publication Number Publication Date
FR2776128A1 FR2776128A1 (fr) 1999-09-17
FR2776128B1 true FR2776128B1 (fr) 2005-04-15

Family

ID=13118479

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9814825A Expired - Fee Related FR2776128B1 (fr) 1998-03-11 1998-11-25 Dispositif a inductance forme sur un substrat semiconducteur

Country Status (5)

Country Link
US (3) US6225677B1 (enExample)
JP (1) JP3942264B2 (enExample)
KR (1) KR100334041B1 (enExample)
FR (1) FR2776128B1 (enExample)
TW (1) TW401639B (enExample)

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US6455915B1 (en) * 2000-05-30 2002-09-24 Programmable Silicon Solutions Integrated inductive circuits
EP1160842A3 (en) * 2000-05-30 2003-09-17 Programmable Silicon Solutions Integrated radio frequency circuits
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DE102004014752B4 (de) * 2004-03-25 2008-11-20 Infineon Technologies Ag Halbleiterbauelement mit kernlosem Wandler und Halbbrücke
US7511588B2 (en) * 2005-07-19 2009-03-31 Lctank Llc Flux linked LC tank circuits forming distributed clock networks
US7508280B2 (en) * 2005-07-19 2009-03-24 Lc Tank Llc Frequency adjustment techniques in coupled LC tank circuits
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JP4647484B2 (ja) * 2005-12-27 2011-03-09 ルネサスエレクトロニクス株式会社 半導体装置
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US7948055B2 (en) * 2006-08-31 2011-05-24 United Microelectronics Corp. Inductor formed on semiconductor substrate
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KR101121645B1 (ko) * 2010-03-22 2012-02-28 삼성전기주식회사 평면형 트랜스포머
TWI498928B (zh) * 2010-08-04 2015-09-01 立積電子股份有限公司 螺旋電感元件
CN102376700A (zh) * 2010-08-04 2012-03-14 立积电子股份有限公司 电子组件及其制法、螺旋电感组件及其制法
US8686539B1 (en) * 2010-10-15 2014-04-01 Xilinx, Inc. Inductor having a deep-well noise isolation shield
US9225392B2 (en) * 2011-03-09 2015-12-29 Qualcomm Incorporated Flat power coil for wireless charging applications
CN102522385A (zh) * 2011-12-30 2012-06-27 上海集成电路研发中心有限公司 片上集成铜电感
US8878334B1 (en) * 2012-03-23 2014-11-04 Altera Corporation Integrated circuit resistors with reduced parasitic capacitance
JP6057534B2 (ja) * 2012-04-18 2017-01-11 住重試験検査株式会社 半導体装置の製造方法
CN103474414B (zh) * 2012-06-06 2016-03-16 中芯国际集成电路制造(上海)有限公司 电感及其形成方法
JP5719000B2 (ja) * 2013-09-17 2015-05-13 学校法人慶應義塾 集積回路装置
JP6375872B2 (ja) * 2014-10-29 2018-08-22 住友電気工業株式会社 超電導マグネットおよび超電導機器
TWI587329B (zh) * 2014-10-31 2017-06-11 台灣東電化股份有限公司 無線充電印刷電路板線圈結構
JP7056016B2 (ja) * 2017-06-13 2022-04-19 Tdk株式会社 コイル部品
JP7169871B2 (ja) * 2018-12-26 2022-11-11 住重アテックス株式会社 半導体装置の製造方法
JP7430376B2 (ja) * 2019-12-19 2024-02-13 三安ジャパンテクノロジー株式会社 スパイラルインダクタ及びパッシブ集積回路
KR20220102772A (ko) 2021-01-14 2022-07-21 주식회사 삼주유니콘 환봉의 길이 조절장치
CN113745404A (zh) * 2021-08-25 2021-12-03 中国科学院微电子研究所 螺旋电感的制备方法、螺旋电感及无源器件模块

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JP3015679B2 (ja) 1993-09-01 2000-03-06 株式会社東芝 半導体装置およびその製造方法
JP3373267B2 (ja) 1993-11-01 2003-02-04 新潟精密株式会社 Ｌｃ素子及び半導体装置
JPH07183468A (ja) 1993-12-22 1995-07-21 Tokin Corp 絶縁シリコン基板並びにそれを用いたインダクタおよび分布定数型フィルタ
TW267260B (enExample) * 1993-12-29 1996-01-01 Tif Kk
JP3450408B2 (ja) 1994-02-21 2003-09-22 新潟精密株式会社 Ｌｃ複合素子
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JP2904086B2 (ja) * 1995-12-27 1999-06-14 日本電気株式会社 半導体装置およびその製造方法
SE510443C2 (sv) * 1996-05-31 1999-05-25 Ericsson Telefon Ab L M Induktorer för integrerade kretsar
KR100314610B1 (ko) * 1996-08-09 2001-12-28 윤덕용 산화막다공성실리콘기판을이용한초고주파소자
KR100243658B1 (ko) * 1996-12-06 2000-02-01 정선종 기판 변환기술을 이용한 인덕터 소자 및 그 제조 방법
US5844299A (en) 1997-01-31 1998-12-01 National Semiconductor Corporation Integrated inductor

Also Published As

Publication number Publication date
KR100334041B1 (ko) 2002-09-25
FR2776128A1 (fr) 1999-09-17
US6879022B2 (en) 2005-04-12
US20020149088A1 (en) 2002-10-17
US20010040270A1 (en) 2001-11-15
JP3942264B2 (ja) 2007-07-11
JPH11261008A (ja) 1999-09-24
KR19990076525A (ko) 1999-10-15
US6225677B1 (en) 2001-05-01
TW401639B (en) 2000-08-11

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Effective date: 20110801