JP3942264B2 - 半導体基板上に形成されるインダクタンス素子 - Google Patents

半導体基板上に形成されるインダクタンス素子 Download PDF

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Publication number
JP3942264B2
JP3942264B2 JP05962098A JP5962098A JP3942264B2 JP 3942264 B2 JP3942264 B2 JP 3942264B2 JP 05962098 A JP05962098 A JP 05962098A JP 5962098 A JP5962098 A JP 5962098A JP 3942264 B2 JP3942264 B2 JP 3942264B2
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JP
Japan
Prior art keywords
inductance element
substrate
conductive film
strip
semiconductor substrate
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Expired - Fee Related
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JP05962098A
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English (en)
Japanese (ja)
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JPH11261008A5 (enExample
JPH11261008A (ja
Inventor
修 小林
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Fujitsu Ltd
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Fujitsu Ltd
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Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP05962098A priority Critical patent/JP3942264B2/ja
Priority to US09/175,975 priority patent/US6225677B1/en
Priority to TW087117512A priority patent/TW401639B/zh
Priority to KR1019980044696A priority patent/KR100334041B1/ko
Priority to FR9814825A priority patent/FR2776128B1/fr
Publication of JPH11261008A publication Critical patent/JPH11261008A/ja
Priority to US09/791,859 priority patent/US20010040270A1/en
Priority to US10/163,367 priority patent/US6879022B2/en
Publication of JPH11261008A5 publication Critical patent/JPH11261008A5/ja
Application granted granted Critical
Publication of JP3942264B2 publication Critical patent/JP3942264B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/20—Inductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/0006—Printed inductances
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP05962098A 1998-03-11 1998-03-11 半導体基板上に形成されるインダクタンス素子 Expired - Fee Related JP3942264B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP05962098A JP3942264B2 (ja) 1998-03-11 1998-03-11 半導体基板上に形成されるインダクタンス素子
US09/175,975 US6225677B1 (en) 1998-03-11 1998-10-21 Inductance device formed on semiconductor substrate
TW087117512A TW401639B (en) 1998-03-11 1998-10-22 Inductance: device formed on semiconductor substrate
KR1019980044696A KR100334041B1 (ko) 1998-03-11 1998-10-24 반도체기판상에형성되는인덕턴스소자
FR9814825A FR2776128B1 (fr) 1998-03-11 1998-11-25 Dispositif a inductance forme sur un substrat semiconducteur
US09/791,859 US20010040270A1 (en) 1998-03-11 2001-02-26 Inductance device formed on semiconductor substrate
US10/163,367 US6879022B2 (en) 1998-03-11 2002-06-07 Inductance device formed on semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP05962098A JP3942264B2 (ja) 1998-03-11 1998-03-11 半導体基板上に形成されるインダクタンス素子

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2005068567A Division JP4230468B2 (ja) 2005-03-11 2005-03-11 半導体基板上に形成されるインダクタンス素子
JP2006276864A Division JP2007005835A (ja) 2006-10-10 2006-10-10 半導体基板状に形成されるインダクタンス素子

Publications (3)

Publication Number Publication Date
JPH11261008A JPH11261008A (ja) 1999-09-24
JPH11261008A5 JPH11261008A5 (enExample) 2005-09-02
JP3942264B2 true JP3942264B2 (ja) 2007-07-11

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JP05962098A Expired - Fee Related JP3942264B2 (ja) 1998-03-11 1998-03-11 半導体基板上に形成されるインダクタンス素子

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Country Link
US (3) US6225677B1 (enExample)
JP (1) JP3942264B2 (enExample)
KR (1) KR100334041B1 (enExample)
FR (1) FR2776128B1 (enExample)
TW (1) TW401639B (enExample)

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US6455915B1 (en) * 2000-05-30 2002-09-24 Programmable Silicon Solutions Integrated inductive circuits
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US6489663B2 (en) * 2001-01-02 2002-12-03 International Business Machines Corporation Spiral inductor semiconducting device with grounding strips and conducting vias
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JP3754406B2 (ja) * 2002-09-13 2006-03-15 富士通株式会社 可変インダクタおよびそのインダクタンス調整方法
FR2846792A1 (fr) * 2002-10-30 2004-05-07 Commissariat Energie Atomique Composant microelectrique radiofrequence et procede de realisation
US20040195650A1 (en) * 2003-04-04 2004-10-07 Tsung-Ju Yang High-Q inductor device with a shielding pattern embedded in a substrate
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DE102004014752B4 (de) * 2004-03-25 2008-11-20 Infineon Technologies Ag Halbleiterbauelement mit kernlosem Wandler und Halbbrücke
US7511588B2 (en) * 2005-07-19 2009-03-31 Lctank Llc Flux linked LC tank circuits forming distributed clock networks
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US7786836B2 (en) * 2005-07-19 2010-08-31 Lctank Llc Fabrication of inductors in transformer based tank circuitry
US7250826B2 (en) * 2005-07-19 2007-07-31 Lctank Llc Mutual inductance in transformer based tank circuitry
US7279426B2 (en) * 2005-09-22 2007-10-09 International Business Machines Corporation Like integrated circuit devices with different depth
JP4647484B2 (ja) * 2005-12-27 2011-03-09 ルネサスエレクトロニクス株式会社 半導体装置
US7402890B2 (en) * 2006-06-02 2008-07-22 International Business Machines Corporation Method for symmetric capacitor formation
GB2440365A (en) * 2006-07-21 2008-01-30 X Fab Uk Ltd A semiconductor device
US7948055B2 (en) * 2006-08-31 2011-05-24 United Microelectronics Corp. Inductor formed on semiconductor substrate
KR100883036B1 (ko) * 2007-07-25 2009-02-09 주식회사 동부하이텍 반도체 소자용 인덕터 및 그 제조 방법
US20100193904A1 (en) * 2009-01-30 2010-08-05 Watt Jeffrey T Integrated circuit inductor with doped substrate
GB0918221D0 (en) * 2009-10-16 2009-12-02 Cambridge Silicon Radio Ltd Inductor structure
KR101121645B1 (ko) * 2010-03-22 2012-02-28 삼성전기주식회사 평면형 트랜스포머
TWI498928B (zh) * 2010-08-04 2015-09-01 立積電子股份有限公司 螺旋電感元件
CN102376700A (zh) * 2010-08-04 2012-03-14 立积电子股份有限公司 电子组件及其制法、螺旋电感组件及其制法
US8686539B1 (en) * 2010-10-15 2014-04-01 Xilinx, Inc. Inductor having a deep-well noise isolation shield
US9225392B2 (en) * 2011-03-09 2015-12-29 Qualcomm Incorporated Flat power coil for wireless charging applications
CN102522385A (zh) * 2011-12-30 2012-06-27 上海集成电路研发中心有限公司 片上集成铜电感
US8878334B1 (en) * 2012-03-23 2014-11-04 Altera Corporation Integrated circuit resistors with reduced parasitic capacitance
JP6057534B2 (ja) * 2012-04-18 2017-01-11 住重試験検査株式会社 半導体装置の製造方法
CN103474414B (zh) * 2012-06-06 2016-03-16 中芯国际集成电路制造(上海)有限公司 电感及其形成方法
JP5719000B2 (ja) * 2013-09-17 2015-05-13 学校法人慶應義塾 集積回路装置
JP6375872B2 (ja) * 2014-10-29 2018-08-22 住友電気工業株式会社 超電導マグネットおよび超電導機器
TWI587329B (zh) * 2014-10-31 2017-06-11 台灣東電化股份有限公司 無線充電印刷電路板線圈結構
JP7056016B2 (ja) * 2017-06-13 2022-04-19 Tdk株式会社 コイル部品
JP7169871B2 (ja) * 2018-12-26 2022-11-11 住重アテックス株式会社 半導体装置の製造方法
JP7430376B2 (ja) * 2019-12-19 2024-02-13 三安ジャパンテクノロジー株式会社 スパイラルインダクタ及びパッシブ集積回路
KR20220102772A (ko) 2021-01-14 2022-07-21 주식회사 삼주유니콘 환봉의 길이 조절장치
CN113745404A (zh) * 2021-08-25 2021-12-03 中国科学院微电子研究所 螺旋电感的制备方法、螺旋电感及无源器件模块

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JP3450408B2 (ja) 1994-02-21 2003-09-22 新潟精密株式会社 Ｌｃ複合素子
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JP2904086B2 (ja) * 1995-12-27 1999-06-14 日本電気株式会社 半導体装置およびその製造方法
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Also Published As

Publication number Publication date
KR100334041B1 (ko) 2002-09-25
FR2776128B1 (fr) 2005-04-15
FR2776128A1 (fr) 1999-09-17
US6879022B2 (en) 2005-04-12
US20020149088A1 (en) 2002-10-17
US20010040270A1 (en) 2001-11-15
JPH11261008A (ja) 1999-09-24
KR19990076525A (ko) 1999-10-15
US6225677B1 (en) 2001-05-01
TW401639B (en) 2000-08-11

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