JPH10189966A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法

Info

Publication number
JPH10189966A
JPH10189966A JP8356493A JP35649396A JPH10189966A JP H10189966 A JPH10189966 A JP H10189966A JP 8356493 A JP8356493 A JP 8356493A JP 35649396 A JP35649396 A JP 35649396A JP H10189966 A JPH10189966 A JP H10189966A
Authority
JP
Japan
Prior art keywords
film
semiconductor device
insulating film
gate insulating
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8356493A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10189966A5 (enExample
Inventor
Katsuhiko Hieda
克彦 稗田
Yoshitaka Tsunashima
祥隆 綱島
Keitarou Imai
馨太郎 今井
Tomonori Aoyama
知憲 青山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP8356493A priority Critical patent/JPH10189966A/ja
Priority to US08/996,704 priority patent/US6278164B1/en
Priority to KR1019970073299A priority patent/KR100296004B1/ko
Priority to TW086119650A priority patent/TW368746B/zh
Publication of JPH10189966A publication Critical patent/JPH10189966A/ja
Publication of JPH10189966A5 publication Critical patent/JPH10189966A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0217—Manufacture or treatment of FETs having insulated gates [IGFET] forming self-aligned punch-through stoppers or threshold implants under gate regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/701—IGFETs having ferroelectric gate insulators, e.g. ferroelectric FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/671—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor having lateral variation in doping or structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/689—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having ferroelectric layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Non-Volatile Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
JP8356493A 1996-12-26 1996-12-26 半導体装置及びその製造方法 Pending JPH10189966A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP8356493A JPH10189966A (ja) 1996-12-26 1996-12-26 半導体装置及びその製造方法
US08/996,704 US6278164B1 (en) 1996-12-26 1997-12-23 Semiconductor device with gate insulator formed of high dielectric film
KR1019970073299A KR100296004B1 (ko) 1996-12-26 1997-12-24 반도체장치및그제조방법
TW086119650A TW368746B (en) 1996-12-26 1997-12-24 Semiconductor device and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8356493A JPH10189966A (ja) 1996-12-26 1996-12-26 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JPH10189966A true JPH10189966A (ja) 1998-07-21
JPH10189966A5 JPH10189966A5 (enExample) 2004-11-25

Family

ID=18449297

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8356493A Pending JPH10189966A (ja) 1996-12-26 1996-12-26 半導体装置及びその製造方法

Country Status (4)

Country Link
US (1) US6278164B1 (enExample)
JP (1) JPH10189966A (enExample)
KR (1) KR100296004B1 (enExample)
TW (1) TW368746B (enExample)

Cited By (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001024065A (ja) * 1999-07-06 2001-01-26 Sony Corp 半導体装置とその製造方法
JP2001068563A (ja) * 1999-07-21 2001-03-16 Motorola Inc 半導体装置の形成方法
US6251763B1 (en) * 1997-06-30 2001-06-26 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing same
JP2001257357A (ja) * 2000-03-08 2001-09-21 Oki Electric Ind Co Ltd 半導体装置およびその製造方法
JP2001284466A (ja) * 2000-03-29 2001-10-12 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US6333223B1 (en) 1998-12-25 2001-12-25 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method of manufacturing the same
JP2002110932A (ja) * 2000-09-28 2002-04-12 Toshiba Corp 半導体装置及びその製造方法
US6376888B1 (en) 1999-04-30 2002-04-23 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
WO2002047146A3 (en) * 2000-12-07 2002-08-22 Advanced Micro Devices Inc DAMASCENE NiSi METAL GATE HIGH-K TRANSISTOR
JP2002289806A (ja) * 2001-03-27 2002-10-04 National Institute Of Advanced Industrial & Technology 半導体不揮発性記憶素子及びその製造方法
JP2002313966A (ja) * 2001-04-16 2002-10-25 Yasuo Tarui トランジスタ型強誘電体不揮発性記憶素子とその製造方法
KR100372639B1 (ko) * 2000-06-21 2003-02-17 주식회사 하이닉스반도체 모스팻 소자의 제조방법
JP2003309188A (ja) * 2002-04-15 2003-10-31 Nec Corp 半導体装置およびその製造方法
US6750108B2 (en) 2001-02-26 2004-06-15 Sharp Kabushiki Kaisha Method for manufacturing a semiconductor device
KR100439365B1 (ko) * 2000-03-27 2004-07-14 가부시끼가이샤 도시바 반도체 장치 제조 방법
KR100442780B1 (ko) * 2001-12-24 2004-08-04 동부전자 주식회사 반도체 소자의 트랜지스터 제조 방법
US6784472B2 (en) 2000-03-24 2004-08-31 Fujitsu Limited Semiconductor device and method for fabricating the same
JP2004266291A (ja) * 2004-05-06 2004-09-24 Toshiba Corp 半導体装置
EP1246254A3 (en) * 2001-03-28 2004-10-20 Sharp Kabushiki Kaisha MFOS memory transistor and method of fabricating same
KR100518239B1 (ko) * 1998-12-30 2005-12-06 주식회사 하이닉스반도체 반도체 장치 제조방법
WO2006077650A1 (ja) * 2005-01-24 2006-07-27 Spansion Llc 半導体装置及びその製造方法
KR100643571B1 (ko) * 2000-12-30 2006-11-10 주식회사 하이닉스반도체 금속 대머신 게이트 형성방법
JP2006352162A (ja) * 2006-09-01 2006-12-28 Toshiba Corp 半導体装置の製造方法
JP2007005489A (ja) * 2005-06-22 2007-01-11 Seiko Instruments Inc 半導体装置の製造方法
US7205609B2 (en) 2003-10-01 2007-04-17 Samsung Electronics Co., Ltd. Methods of forming semiconductor devices including fin structures and related devices
US7227224B2 (en) 2003-02-28 2007-06-05 Samsung Electronics Co., Ltd. MOS transistor with elevated source and drain structures and method of fabrication thereof
JP2008124484A (ja) * 2007-12-07 2008-05-29 Toshiba Corp 半導体装置及びその製造方法
JP2008244490A (ja) * 1999-01-08 2008-10-09 Toshiba Corp 半導体装置の製造方法
US7579231B2 (en) 1999-01-29 2009-08-25 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
JP2009278043A (ja) * 2008-05-19 2009-11-26 Renesas Technology Corp 半導体装置の製造方法および半導体装置
KR100937650B1 (ko) * 2002-12-30 2010-01-19 동부일렉트로닉스 주식회사 반도체 장치의 트랜지스터 제조 방법
US7772671B2 (en) 1999-06-30 2010-08-10 Kabushiki Kaisha Toshiba Semiconductor device having an element isolating insulating film
JP2010219455A (ja) * 2009-03-19 2010-09-30 National Institute Of Advanced Industrial Science & Technology 絶縁ゲート型半導体装置の製造方法
JP2012156229A (ja) * 2011-01-25 2012-08-16 Renesas Electronics Corp 半導体装置およびその製造方法
JP2012160737A (ja) * 2012-03-08 2012-08-23 Toshiba Corp 半導体装置の製造方法
JP2015535146A (ja) * 2012-11-20 2015-12-07 マイクロン テクノロジー， インク． トランジスタ、メモリセルおよび半導体構造

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DE19857038A1 (de) * 1998-12-10 2000-06-29 Siemens Ag FEMFET-Vorrichtung und Verfahren zu deren Herstellung
JP4221100B2 (ja) * 1999-01-13 2009-02-12 エルピーダメモリ株式会社 半導体装置
JP2000252372A (ja) * 1999-02-26 2000-09-14 Sharp Corp 半導体メモリ装置及びその製造方法
TW495980B (en) * 1999-06-11 2002-07-21 Koninkl Philips Electronics Nv A method of manufacturing a semiconductor device
KR100338104B1 (ko) * 1999-06-30 2002-05-24 박종섭 반도체 소자의 제조 방법
US6482724B1 (en) * 1999-09-07 2002-11-19 Texas Instruments Incorporated Integrated circuit asymmetric transistors
JP2001196576A (ja) * 2000-01-12 2001-07-19 Mitsubishi Electric Corp 半導体装置およびその製造方法
KR100350056B1 (ko) * 2000-03-09 2002-08-24 삼성전자 주식회사 다마신 게이트 공정에서 자기정렬콘택패드 형성 방법
US6472274B1 (en) * 2000-06-29 2002-10-29 International Business Machines Corporation MOSFET with self-aligned channel edge implant and method
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JP2002026312A (ja) * 2000-07-06 2002-01-25 National Institute Of Advanced Industrial & Technology 半導体装置
JP4096507B2 (ja) * 2000-09-29 2008-06-04 富士通株式会社 半導体装置の製造方法
JP3669919B2 (ja) * 2000-12-04 2005-07-13 シャープ株式会社 半導体装置の製造方法
US6713846B1 (en) * 2001-01-26 2004-03-30 Aviza Technology, Inc. Multilayer high κ dielectric films
US20020182385A1 (en) * 2001-05-29 2002-12-05 Rensselaer Polytechnic Institute Atomic layer passivation
KR100419744B1 (ko) * 2001-06-28 2004-02-25 주식회사 하이닉스반도체 트랜지스터 및 그의 제조 방법
KR100452632B1 (ko) * 2001-12-29 2004-10-14 주식회사 하이닉스반도체 반도체 소자의 트랜지스터 제조 방법
KR100412141B1 (ko) * 2001-12-29 2003-12-31 주식회사 하이닉스반도체 반도체 소자의 게이트 전극 형성방법
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JP4209206B2 (ja) * 2003-01-14 2009-01-14 富士通マイクロエレクトロニクス株式会社 半導体装置の製造方法
KR101051801B1 (ko) * 2003-11-13 2011-07-25 매그나칩 반도체 유한회사 반도체 소자의 트랜지스터 및 그 제조 방법
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KR100766500B1 (ko) * 2006-10-20 2007-10-15 삼성전자주식회사 반도체 소자 및 그 형성 방법
US7964487B2 (en) * 2008-06-04 2011-06-21 International Business Machines Corporation Carrier mobility enhanced channel devices and method of manufacture
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US9679813B2 (en) * 2015-05-12 2017-06-13 United Microelectronics Corp. Semiconductor structure and process for forming plug including layer with pulled back sidewall part
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Cited By (52)

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US6251763B1 (en) * 1997-06-30 2001-06-26 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing same
US6333223B1 (en) 1998-12-25 2001-12-25 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method of manufacturing the same
US6509225B2 (en) 1998-12-25 2003-01-21 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method of manufacturing the same
US6462386B2 (en) 1998-12-25 2002-10-08 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method of manufacturing the same
KR100518239B1 (ko) * 1998-12-30 2005-12-06 주식회사 하이닉스반도체 반도체 장치 제조방법
JP2008244490A (ja) * 1999-01-08 2008-10-09 Toshiba Corp 半導体装置の製造方法
US7579231B2 (en) 1999-01-29 2009-08-25 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
US6376888B1 (en) 1999-04-30 2002-04-23 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
US7772671B2 (en) 1999-06-30 2010-08-10 Kabushiki Kaisha Toshiba Semiconductor device having an element isolating insulating film
JP2001024065A (ja) * 1999-07-06 2001-01-26 Sony Corp 半導体装置とその製造方法
JP2001068563A (ja) * 1999-07-21 2001-03-16 Motorola Inc 半導体装置の形成方法
JP2001257357A (ja) * 2000-03-08 2001-09-21 Oki Electric Ind Co Ltd 半導体装置およびその製造方法
US6784472B2 (en) 2000-03-24 2004-08-31 Fujitsu Limited Semiconductor device and method for fabricating the same
US6849511B2 (en) 2000-03-24 2005-02-01 Fujitsu Limited Semiconductor device and method for fabricating the same including interconnection of two electrodes
KR100439365B1 (ko) * 2000-03-27 2004-07-14 가부시끼가이샤 도시바 반도체 장치 제조 방법
JP2001284466A (ja) * 2000-03-29 2001-10-12 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US6563178B2 (en) 2000-03-29 2003-05-13 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the device
KR100372639B1 (ko) * 2000-06-21 2003-02-17 주식회사 하이닉스반도체 모스팻 소자의 제조방법
JP2002110932A (ja) * 2000-09-28 2002-04-12 Toshiba Corp 半導体装置及びその製造方法
WO2002047146A3 (en) * 2000-12-07 2002-08-22 Advanced Micro Devices Inc DAMASCENE NiSi METAL GATE HIGH-K TRANSISTOR
KR100643571B1 (ko) * 2000-12-30 2006-11-10 주식회사 하이닉스반도체 금속 대머신 게이트 형성방법
KR100471526B1 (ko) * 2001-02-26 2005-03-08 샤프 가부시키가이샤 반도체 장치의 제조방법
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