KR100296004B1 - 반도체장치및그제조방법 - Google Patents

반도체장치및그제조방법 Download PDF

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Publication number
KR100296004B1
KR100296004B1 KR1019970073299A KR19970073299A KR100296004B1 KR 100296004 B1 KR100296004 B1 KR 100296004B1 KR 1019970073299 A KR1019970073299 A KR 1019970073299A KR 19970073299 A KR19970073299 A KR 19970073299A KR 100296004 B1 KR100296004 B1 KR 100296004B1
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South Korea
Prior art keywords
insulating film
film
semiconductor device
gate
gate electrode
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Expired - Fee Related
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KR1019970073299A
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English (en)
Korean (ko)
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KR19980064586A (ko
Inventor
가쯔히꼬 히에다
요시따까 쯔나시마
게이따로 이마이
도모노리 아오야마
Original Assignee
니시무로 타이죠
가부시끼가이샤 도시바
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Publication of KR19980064586A publication Critical patent/KR19980064586A/ko
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Publication of KR100296004B1 publication Critical patent/KR100296004B1/ko
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0217—Manufacture or treatment of FETs having insulated gates [IGFET] forming self-aligned punch-through stoppers or threshold implants under gate regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/701—IGFETs having ferroelectric gate insulators, e.g. ferroelectric FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/671—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor having lateral variation in doping or structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/689—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having ferroelectric layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
KR1019970073299A 1996-12-26 1997-12-24 반도체장치및그제조방법 Expired - Fee Related KR100296004B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP96-356493 1996-12-26
JP8356493A JPH10189966A (ja) 1996-12-26 1996-12-26 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
KR19980064586A KR19980064586A (ko) 1998-10-07
KR100296004B1 true KR100296004B1 (ko) 2001-08-07

Family

ID=18449297

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970073299A Expired - Fee Related KR100296004B1 (ko) 1996-12-26 1997-12-24 반도체장치및그제조방법

Country Status (4)

Country Link
US (1) US6278164B1 (enExample)
JP (1) JPH10189966A (enExample)
KR (1) KR100296004B1 (enExample)
TW (1) TW368746B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100465380B1 (ko) * 2000-12-04 2005-01-13 샤프 가부시키가이샤 반도체 장치 및 그의 제조 방법
KR101051801B1 (ko) * 2003-11-13 2011-07-25 매그나칩 반도체 유한회사 반도체 소자의 트랜지스터 및 그 제조 방법
KR101588280B1 (ko) 2015-10-05 2016-01-25 (주)신흥이앤지 지지강선의 장력조절수단이 마련되는 프리스트레스 거더교

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US6054355A (en) 1997-06-30 2000-04-25 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor device which includes forming a dummy gate
US6251763B1 (en) * 1997-06-30 2001-06-26 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing same
DE19840824C1 (de) * 1998-09-07 1999-10-21 Siemens Ag Ferroelektrischer Transistor, dessen Verwendung in einer Speicherzellenanordnung und Verfahren zu dessen Herstellung
DE19857038A1 (de) * 1998-12-10 2000-06-29 Siemens Ag FEMFET-Vorrichtung und Verfahren zu deren Herstellung
JP3023355B1 (ja) 1998-12-25 2000-03-21 松下電器産業株式会社 半導体装置及びその製造方法
KR100518239B1 (ko) * 1998-12-30 2005-12-06 주식회사 하이닉스반도체 반도체 장치 제조방법
JP4987796B2 (ja) * 1999-01-08 2012-07-25 株式会社東芝 半導体装置の製造方法
JP4221100B2 (ja) * 1999-01-13 2009-02-12 エルピーダメモリ株式会社 半導体装置
US6737716B1 (en) 1999-01-29 2004-05-18 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
JP2000252372A (ja) * 1999-02-26 2000-09-14 Sharp Corp 半導体メモリ装置及びその製造方法
JP4237332B2 (ja) 1999-04-30 2009-03-11 株式会社東芝 半導体装置の製造方法
TW495980B (en) * 1999-06-11 2002-07-21 Koninkl Philips Electronics Nv A method of manufacturing a semiconductor device
KR100338104B1 (ko) * 1999-06-30 2002-05-24 박종섭 반도체 소자의 제조 방법
US6617226B1 (en) 1999-06-30 2003-09-09 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
JP4491858B2 (ja) * 1999-07-06 2010-06-30 ソニー株式会社 半導体装置の製造方法
US6171910B1 (en) * 1999-07-21 2001-01-09 Motorola Inc. Method for forming a semiconductor device
US6482724B1 (en) * 1999-09-07 2002-11-19 Texas Instruments Incorporated Integrated circuit asymmetric transistors
JP2001196576A (ja) * 2000-01-12 2001-07-19 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2001257357A (ja) * 2000-03-08 2001-09-21 Oki Electric Ind Co Ltd 半導体装置およびその製造方法
KR100350056B1 (ko) * 2000-03-09 2002-08-24 삼성전자 주식회사 다마신 게이트 공정에서 자기정렬콘택패드 형성 방법
WO2001071807A1 (en) 2000-03-24 2001-09-27 Fujitsu Limited Semiconductor device and method of manufacture thereof
JP3906005B2 (ja) * 2000-03-27 2007-04-18 株式会社東芝 半導体装置の製造方法
JP2001284466A (ja) * 2000-03-29 2001-10-12 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
KR100372639B1 (ko) * 2000-06-21 2003-02-17 주식회사 하이닉스반도체 모스팻 소자의 제조방법
KR100372641B1 (ko) * 2000-06-29 2003-02-17 주식회사 하이닉스반도체 다마신 공정을 이용한 반도체 소자의 제조방법
US6472274B1 (en) * 2000-06-29 2002-10-29 International Business Machines Corporation MOSFET with self-aligned channel edge implant and method
JP2002026312A (ja) * 2000-07-06 2002-01-25 National Institute Of Advanced Industrial & Technology 半導体装置
JP2002110932A (ja) * 2000-09-28 2002-04-12 Toshiba Corp 半導体装置及びその製造方法
JP4096507B2 (ja) * 2000-09-29 2008-06-04 富士通株式会社 半導体装置の製造方法
WO2002047146A2 (en) * 2000-12-07 2002-06-13 Advanced Micro Devices, Inc. DAMASCENE NiSi METAL GATE HIGH-K TRANSISTOR
KR100643571B1 (ko) * 2000-12-30 2006-11-10 주식회사 하이닉스반도체 금속 대머신 게이트 형성방법
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JP4887566B2 (ja) * 2001-03-27 2012-02-29 独立行政法人産業技術総合研究所 半導体不揮発性記憶素子及びその製造方法
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JP2002313966A (ja) * 2001-04-16 2002-10-25 Yasuo Tarui トランジスタ型強誘電体不揮発性記憶素子とその製造方法
US20020182385A1 (en) * 2001-05-29 2002-12-05 Rensselaer Polytechnic Institute Atomic layer passivation
KR100419744B1 (ko) * 2001-06-28 2004-02-25 주식회사 하이닉스반도체 트랜지스터 및 그의 제조 방법
KR100442780B1 (ko) * 2001-12-24 2004-08-04 동부전자 주식회사 반도체 소자의 트랜지스터 제조 방법
KR100412141B1 (ko) * 2001-12-29 2003-12-31 주식회사 하이닉스반도체 반도체 소자의 게이트 전극 형성방법
KR100452632B1 (ko) * 2001-12-29 2004-10-14 주식회사 하이닉스반도체 반도체 소자의 트랜지스터 제조 방법
JP2003309188A (ja) * 2002-04-15 2003-10-31 Nec Corp 半導体装置およびその製造方法
US6621114B1 (en) * 2002-05-20 2003-09-16 Advanced Micro Devices, Inc. MOS transistors with high-k dielectric gate insulator for reducing remote scattering
US6794721B2 (en) * 2002-12-23 2004-09-21 International Business Machines Corporation Integration system via metal oxide conversion
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JP4209206B2 (ja) * 2003-01-14 2009-01-14 富士通マイクロエレクトロニクス株式会社 半導体装置の製造方法
KR100499159B1 (ko) 2003-02-28 2005-07-01 삼성전자주식회사 리세스 채널을 갖는 반도체장치 및 그 제조방법
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JP5968708B2 (ja) 2012-01-23 2016-08-10 ルネサスエレクトロニクス株式会社 半導体装置
US8860135B2 (en) 2012-02-21 2014-10-14 United Microelectronics Corp. Semiconductor structure having aluminum layer with high reflectivity
JP5390654B2 (ja) * 2012-03-08 2014-01-15 株式会社東芝 半導体装置の製造方法
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Publication number Priority date Publication date Assignee Title
KR100465380B1 (ko) * 2000-12-04 2005-01-13 샤프 가부시키가이샤 반도체 장치 및 그의 제조 방법
KR101051801B1 (ko) * 2003-11-13 2011-07-25 매그나칩 반도체 유한회사 반도체 소자의 트랜지스터 및 그 제조 방법
KR101588280B1 (ko) 2015-10-05 2016-01-25 (주)신흥이앤지 지지강선의 장력조절수단이 마련되는 프리스트레스 거더교

Also Published As

Publication number Publication date
KR19980064586A (ko) 1998-10-07
US6278164B1 (en) 2001-08-21
JPH10189966A (ja) 1998-07-21
TW368746B (en) 1999-09-01

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