TW368746B - Semiconductor device and method for manufacturing the same - Google Patents

Semiconductor device and method for manufacturing the same

Info

Publication number
TW368746B
TW368746B TW086119650A TW86119650A TW368746B TW 368746 B TW368746 B TW 368746B TW 086119650 A TW086119650 A TW 086119650A TW 86119650 A TW86119650 A TW 86119650A TW 368746 B TW368746 B TW 368746B
Authority
TW
Taiwan
Prior art keywords
forming
insulation film
dummy gate
gate pattern
gate
Prior art date
Application number
TW086119650A
Other languages
English (en)
Chinese (zh)
Inventor
Katsuhiko Hieda
Yoshitaka Tsunahima
Keitarou Imai
Tomonori Aoyama
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of TW368746B publication Critical patent/TW368746B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0217—Manufacture or treatment of FETs having insulated gates [IGFET] forming self-aligned punch-through stoppers or threshold implants under gate regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/701—IGFETs having ferroelectric gate insulators, e.g. ferroelectric FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/671—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor having lateral variation in doping or structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/689—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having ferroelectric layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Non-Volatile Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
TW086119650A 1996-12-26 1997-12-24 Semiconductor device and method for manufacturing the same TW368746B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8356493A JPH10189966A (ja) 1996-12-26 1996-12-26 半導体装置及びその製造方法

Publications (1)

Publication Number Publication Date
TW368746B true TW368746B (en) 1999-09-01

Family

ID=18449297

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086119650A TW368746B (en) 1996-12-26 1997-12-24 Semiconductor device and method for manufacturing the same

Country Status (4)

Country Link
US (1) US6278164B1 (enExample)
JP (1) JPH10189966A (enExample)
KR (1) KR100296004B1 (enExample)
TW (1) TW368746B (enExample)

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JP3023355B1 (ja) 1998-12-25 2000-03-21 松下電器産業株式会社 半導体装置及びその製造方法
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JP4987796B2 (ja) * 1999-01-08 2012-07-25 株式会社東芝 半導体装置の製造方法
JP4221100B2 (ja) * 1999-01-13 2009-02-12 エルピーダメモリ株式会社 半導体装置
US6737716B1 (en) 1999-01-29 2004-05-18 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
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JP4209206B2 (ja) * 2003-01-14 2009-01-14 富士通マイクロエレクトロニクス株式会社 半導体装置の製造方法
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Also Published As

Publication number Publication date
KR100296004B1 (ko) 2001-08-07
JPH10189966A (ja) 1998-07-21
KR19980064586A (ko) 1998-10-07
US6278164B1 (en) 2001-08-21

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