ATE494630T1 - Herstellungsverfahren eines feldeffekttransistors aus siliziumkarbid - Google Patents
Herstellungsverfahren eines feldeffekttransistors aus siliziumkarbidInfo
- Publication number
- ATE494630T1 ATE494630T1 AT98934229T AT98934229T ATE494630T1 AT E494630 T1 ATE494630 T1 AT E494630T1 AT 98934229 T AT98934229 T AT 98934229T AT 98934229 T AT98934229 T AT 98934229T AT E494630 T1 ATE494630 T1 AT E494630T1
- Authority
- AT
- Austria
- Prior art keywords
- substrate
- silicon carbide
- insulative material
- layer
- insulative
- Prior art date
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title abstract 6
- 229910010271 silicon carbide Inorganic materials 0.000 title abstract 6
- 230000005669 field effect Effects 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 12
- 239000000463 material Substances 0.000 abstract 8
- 238000000151 deposition Methods 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 239000012774 insulation material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/931—Silicon carbide semiconductor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Bipolar Transistors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/884,726 US5877041A (en) | 1997-06-30 | 1997-06-30 | Self-aligned power field effect transistor in silicon carbide |
PCT/US1998/013703 WO1999000833A1 (en) | 1997-06-30 | 1998-06-30 | Self-aligned power field effect transistor in silicon carbide |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE494630T1 true ATE494630T1 (de) | 2011-01-15 |
Family
ID=25385251
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT98934229T ATE494630T1 (de) | 1997-06-30 | 1998-06-30 | Herstellungsverfahren eines feldeffekttransistors aus siliziumkarbid |
Country Status (9)
Country | Link |
---|---|
US (1) | US5877041A (de) |
EP (1) | EP0996975B8 (de) |
JP (1) | JP4173629B2 (de) |
KR (1) | KR100592401B1 (de) |
AT (1) | ATE494630T1 (de) |
AU (1) | AU8380098A (de) |
CA (1) | CA2296103A1 (de) |
DE (1) | DE69842085D1 (de) |
WO (1) | WO1999000833A1 (de) |
Families Citing this family (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3206727B2 (ja) * | 1997-02-20 | 2001-09-10 | 富士電機株式会社 | 炭化けい素縦型mosfetおよびその製造方法 |
US5886368A (en) * | 1997-07-29 | 1999-03-23 | Micron Technology, Inc. | Transistor with silicon oxycarbide gate and methods of fabrication and use |
US7196929B1 (en) | 1997-07-29 | 2007-03-27 | Micron Technology Inc | Method for operating a memory device having an amorphous silicon carbide gate insulator |
US7154153B1 (en) | 1997-07-29 | 2006-12-26 | Micron Technology, Inc. | Memory device |
US6936849B1 (en) | 1997-07-29 | 2005-08-30 | Micron Technology, Inc. | Silicon carbide gate transistor |
US6794255B1 (en) | 1997-07-29 | 2004-09-21 | Micron Technology, Inc. | Carburized silicon gate insulators for integrated circuits |
US6965123B1 (en) | 1997-07-29 | 2005-11-15 | Micron Technology, Inc. | Transistor with variable electron affinity gate and methods of fabrication and use |
US6031263A (en) | 1997-07-29 | 2000-02-29 | Micron Technology, Inc. | DEAPROM and transistor with gallium nitride or gallium aluminum nitride gate |
US6746893B1 (en) | 1997-07-29 | 2004-06-08 | Micron Technology, Inc. | Transistor with variable electron affinity gate and methods of fabrication and use |
US6100169A (en) | 1998-06-08 | 2000-08-08 | Cree, Inc. | Methods of fabricating silicon carbide power devices by controlled annealing |
US6107142A (en) * | 1998-06-08 | 2000-08-22 | Cree Research, Inc. | Self-aligned methods of fabricating silicon carbide power devices by implantation and lateral diffusion |
US6429041B1 (en) | 2000-07-13 | 2002-08-06 | Cree, Inc. | Methods of fabricating silicon carbide inversion channel devices without the need to utilize P-type implantation |
US6956238B2 (en) * | 2000-10-03 | 2005-10-18 | Cree, Inc. | Silicon carbide power metal-oxide semiconductor field effect transistors having a shorting channel and methods of fabricating silicon carbide metal-oxide semiconductor field effect transistors having a shorting channel |
US7221010B2 (en) | 2002-12-20 | 2007-05-22 | Cree, Inc. | Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors |
US6979863B2 (en) * | 2003-04-24 | 2005-12-27 | Cree, Inc. | Silicon carbide MOSFETs with integrated antiparallel junction barrier Schottky free wheeling diodes and methods of fabricating the same |
US7074643B2 (en) * | 2003-04-24 | 2006-07-11 | Cree, Inc. | Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same |
US7138292B2 (en) * | 2003-09-10 | 2006-11-21 | Lsi Logic Corporation | Apparatus and method of manufacture for integrated circuit and CMOS device including epitaxially grown dielectric on silicon carbide |
US7118970B2 (en) * | 2004-06-22 | 2006-10-10 | Cree, Inc. | Methods of fabricating silicon carbide devices with hybrid well regions |
US7615801B2 (en) * | 2005-05-18 | 2009-11-10 | Cree, Inc. | High voltage silicon carbide devices having bi-directional blocking capabilities |
US20060261346A1 (en) * | 2005-05-18 | 2006-11-23 | Sei-Hyung Ryu | High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the same |
US7414268B2 (en) | 2005-05-18 | 2008-08-19 | Cree, Inc. | High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities |
US7391057B2 (en) * | 2005-05-18 | 2008-06-24 | Cree, Inc. | High voltage silicon carbide devices having bi-directional blocking capabilities |
US7528040B2 (en) | 2005-05-24 | 2009-05-05 | Cree, Inc. | Methods of fabricating silicon carbide devices having smooth channels |
US8432012B2 (en) | 2006-08-01 | 2013-04-30 | Cree, Inc. | Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same |
US7728402B2 (en) * | 2006-08-01 | 2010-06-01 | Cree, Inc. | Semiconductor devices including schottky diodes with controlled breakdown |
EP2631951B1 (de) * | 2006-08-17 | 2017-10-11 | Cree, Inc. | Bipolare Hochleistungstransistoren mit isoliertem Gatter |
US8835987B2 (en) * | 2007-02-27 | 2014-09-16 | Cree, Inc. | Insulated gate bipolar transistors including current suppressing layers |
US20090159896A1 (en) * | 2007-12-20 | 2009-06-25 | General Electric Company | Silicon carbide mosfet devices and methods of making |
US8232558B2 (en) | 2008-05-21 | 2012-07-31 | Cree, Inc. | Junction barrier Schottky diodes with current surge capability |
US8288220B2 (en) * | 2009-03-27 | 2012-10-16 | Cree, Inc. | Methods of forming semiconductor devices including epitaxial layers and related structures |
US8294507B2 (en) | 2009-05-08 | 2012-10-23 | Cree, Inc. | Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits |
US8629509B2 (en) * | 2009-06-02 | 2014-01-14 | Cree, Inc. | High voltage insulated gate bipolar transistors with minority carrier diverter |
US8193848B2 (en) | 2009-06-02 | 2012-06-05 | Cree, Inc. | Power switching devices having controllable surge current capabilities |
US8541787B2 (en) * | 2009-07-15 | 2013-09-24 | Cree, Inc. | High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability |
US8354690B2 (en) | 2009-08-31 | 2013-01-15 | Cree, Inc. | Solid-state pinch off thyristor circuits |
US9117739B2 (en) | 2010-03-08 | 2015-08-25 | Cree, Inc. | Semiconductor devices with heterojunction barrier regions and methods of fabricating same |
US8415671B2 (en) | 2010-04-16 | 2013-04-09 | Cree, Inc. | Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices |
CN102376574B (zh) * | 2010-08-09 | 2014-11-12 | 上海华虹宏力半导体制造有限公司 | 半导体器件的制造方法 |
JP5883563B2 (ja) * | 2011-01-31 | 2016-03-15 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US9029945B2 (en) | 2011-05-06 | 2015-05-12 | Cree, Inc. | Field effect transistor devices with low source resistance |
US9142662B2 (en) | 2011-05-06 | 2015-09-22 | Cree, Inc. | Field effect transistor devices with low source resistance |
US9373617B2 (en) | 2011-09-11 | 2016-06-21 | Cree, Inc. | High current, low switching loss SiC power module |
US8680587B2 (en) | 2011-09-11 | 2014-03-25 | Cree, Inc. | Schottky diode |
WO2013036370A1 (en) | 2011-09-11 | 2013-03-14 | Cree, Inc. | High current density power module comprising transistors with improved layout |
US8664665B2 (en) | 2011-09-11 | 2014-03-04 | Cree, Inc. | Schottky diode employing recesses for elements of junction barrier array |
US8618582B2 (en) | 2011-09-11 | 2013-12-31 | Cree, Inc. | Edge termination structure employing recesses for edge termination elements |
US9640617B2 (en) | 2011-09-11 | 2017-05-02 | Cree, Inc. | High performance power module |
WO2016084158A1 (ja) | 2014-11-26 | 2016-06-02 | 新電元工業株式会社 | 炭化珪素半導体装置及びその製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2542448B2 (ja) * | 1990-05-24 | 1996-10-09 | シャープ株式会社 | 電界効果トランジスタおよびその製造方法 |
US5612260A (en) * | 1992-06-05 | 1997-03-18 | Cree Research, Inc. | Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures |
JP3146694B2 (ja) * | 1992-11-12 | 2001-03-19 | 富士電機株式会社 | 炭化けい素mosfetおよび炭化けい素mosfetの製造方法 |
US5322802A (en) * | 1993-01-25 | 1994-06-21 | North Carolina State University At Raleigh | Method of fabricating silicon carbide field effect transistor |
JPH0799312A (ja) * | 1993-02-22 | 1995-04-11 | Texas Instr Inc <Ti> | 半導体装置とその製法 |
US5395780A (en) * | 1993-10-12 | 1995-03-07 | Goldstar Electron Co., Ltd. | Process for fabricating MOS transistor |
KR0153878B1 (ko) * | 1994-06-07 | 1998-10-15 | 쿠미하시 요시유키 | 탄화규소반도체장치와 그 제조방법 |
US5543637A (en) * | 1994-11-14 | 1996-08-06 | North Carolina State University | Silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein |
US5510281A (en) * | 1995-03-20 | 1996-04-23 | General Electric Company | Method of fabricating a self-aligned DMOS transistor device using SiC and spacers |
-
1997
- 1997-06-30 US US08/884,726 patent/US5877041A/en not_active Expired - Lifetime
-
1998
- 1998-06-30 AT AT98934229T patent/ATE494630T1/de not_active IP Right Cessation
- 1998-06-30 JP JP2000500670A patent/JP4173629B2/ja not_active Expired - Fee Related
- 1998-06-30 WO PCT/US1998/013703 patent/WO1999000833A1/en active IP Right Grant
- 1998-06-30 KR KR1019997012539A patent/KR100592401B1/ko not_active IP Right Cessation
- 1998-06-30 CA CA002296103A patent/CA2296103A1/en not_active Abandoned
- 1998-06-30 DE DE69842085T patent/DE69842085D1/de not_active Expired - Lifetime
- 1998-06-30 AU AU83800/98A patent/AU8380098A/en not_active Abandoned
- 1998-06-30 EP EP98934229A patent/EP0996975B8/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69842085D1 (de) | 2011-02-17 |
JP4173629B2 (ja) | 2008-10-29 |
KR20010020583A (ko) | 2001-03-15 |
JP2001509637A (ja) | 2001-07-24 |
US5877041A (en) | 1999-03-02 |
AU8380098A (en) | 1999-01-19 |
EP0996975A1 (de) | 2000-05-03 |
EP0996975B8 (de) | 2011-09-14 |
CA2296103A1 (en) | 1999-01-07 |
EP0996975B1 (de) | 2011-01-05 |
KR100592401B1 (ko) | 2006-06-22 |
WO1999000833A1 (en) | 1999-01-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ATE494630T1 (de) | Herstellungsverfahren eines feldeffekttransistors aus siliziumkarbid | |
GB1477083A (en) | Insulated gate field effect transistors | |
EP0827205A3 (de) | Herstellungsverfahren für eine Halbleiteranordnung | |
KR930005257A (ko) | 박막 전계효과 소자 및 그의 제조방법 | |
KR970007965B1 (en) | Structure and fabrication method of tft | |
KR960024604A (ko) | 이중 채널 박막트랜지스터 및 그 제조방법 | |
KR930001484A (ko) | Dmos 트랜지스터를 제조하기 위한 방법 | |
KR860008617A (ko) | 자기정합된 바이폴라 트랜지스터의 제조방법 | |
CA2009068A1 (en) | Trench jfet integrated circuit elements | |
KR910010731A (ko) | 반도체장치 및 그 제조방법 | |
KR910007103A (ko) | 반도체 장치의 자기 정렬 콘택 제조방법 | |
JP3161767B2 (ja) | 半導体素子の製造方法 | |
KR100279956B1 (ko) | 반도체 장치의 제조 방법 | |
JPS5443688A (en) | Production of semiconductor integrated circuit unit | |
KR890005885A (ko) | 바이폴라 트랜지스터의 제조방법 | |
KR910019217A (ko) | 근접 배치 접점을 갖는 bicmos 디바이스 및 그 제조 방법 | |
JPS63142866A (ja) | 絶縁ゲ−ト電界効果トランジスタの製造方法 | |
KR970053005A (ko) | 바이폴라 트랜지스터 및 그 제조방법 | |
KR970054218A (ko) | 고전압 트랜지스터 제조방법 | |
JPS5721865A (en) | Manufacture of semiconductor device | |
KR960032730A (ko) | 고압 반도체 소자 및 그 제조방법 | |
KR970053807A (ko) | 바이폴라 트랜지스터 구조를 이용한 접합 축전기 및 그 제조 방법 | |
KR950024355A (ko) | 반도체 소자 및 그 제조방법 | |
TW253980B (en) | Process of MOS transistor | |
KR970030889A (ko) | 모스트랜지스터 및 그 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |