DE69842085D1 - Herstellungsverfahren eines feldeffekttransistors aus siliziumkarbid - Google Patents

Herstellungsverfahren eines feldeffekttransistors aus siliziumkarbid

Info

Publication number
DE69842085D1
DE69842085D1 DE69842085T DE69842085T DE69842085D1 DE 69842085 D1 DE69842085 D1 DE 69842085D1 DE 69842085 T DE69842085 T DE 69842085T DE 69842085 T DE69842085 T DE 69842085T DE 69842085 D1 DE69842085 D1 DE 69842085D1
Authority
DE
Germany
Prior art keywords
substrate
insulative material
silicon carbide
layer
insulative
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69842085T
Other languages
English (en)
Inventor
Robert T Fuller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Harris Corp
Original Assignee
Harris Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Harris Corp filed Critical Harris Corp
Application granted granted Critical
Publication of DE69842085D1 publication Critical patent/DE69842085D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Bipolar Transistors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Junction Field-Effect Transistors (AREA)
DE69842085T 1997-06-30 1998-06-30 Herstellungsverfahren eines feldeffekttransistors aus siliziumkarbid Expired - Lifetime DE69842085D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/884,726 US5877041A (en) 1997-06-30 1997-06-30 Self-aligned power field effect transistor in silicon carbide
PCT/US1998/013703 WO1999000833A1 (en) 1997-06-30 1998-06-30 Self-aligned power field effect transistor in silicon carbide

Publications (1)

Publication Number Publication Date
DE69842085D1 true DE69842085D1 (de) 2011-02-17

Family

ID=25385251

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69842085T Expired - Lifetime DE69842085D1 (de) 1997-06-30 1998-06-30 Herstellungsverfahren eines feldeffekttransistors aus siliziumkarbid

Country Status (9)

Country Link
US (1) US5877041A (de)
EP (1) EP0996975B8 (de)
JP (1) JP4173629B2 (de)
KR (1) KR100592401B1 (de)
AT (1) ATE494630T1 (de)
AU (1) AU8380098A (de)
CA (1) CA2296103A1 (de)
DE (1) DE69842085D1 (de)
WO (1) WO1999000833A1 (de)

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JP3206727B2 (ja) * 1997-02-20 2001-09-10 富士電機株式会社 炭化けい素縦型ｍｏｓｆｅｔおよびその製造方法
US5886368A (en) * 1997-07-29 1999-03-23 Micron Technology, Inc. Transistor with silicon oxycarbide gate and methods of fabrication and use
US7196929B1 (en) 1997-07-29 2007-03-27 Micron Technology Inc Method for operating a memory device having an amorphous silicon carbide gate insulator
US7154153B1 (en) 1997-07-29 2006-12-26 Micron Technology, Inc. Memory device
US6936849B1 (en) 1997-07-29 2005-08-30 Micron Technology, Inc. Silicon carbide gate transistor
US6794255B1 (en) 1997-07-29 2004-09-21 Micron Technology, Inc. Carburized silicon gate insulators for integrated circuits
US6965123B1 (en) 1997-07-29 2005-11-15 Micron Technology, Inc. Transistor with variable electron affinity gate and methods of fabrication and use
US6031263A (en) 1997-07-29 2000-02-29 Micron Technology, Inc. DEAPROM and transistor with gallium nitride or gallium aluminum nitride gate
US6746893B1 (en) 1997-07-29 2004-06-08 Micron Technology, Inc. Transistor with variable electron affinity gate and methods of fabrication and use
US6100169A (en) 1998-06-08 2000-08-08 Cree, Inc. Methods of fabricating silicon carbide power devices by controlled annealing
US6107142A (en) * 1998-06-08 2000-08-22 Cree Research, Inc. Self-aligned methods of fabricating silicon carbide power devices by implantation and lateral diffusion
US6429041B1 (en) 2000-07-13 2002-08-06 Cree, Inc. Methods of fabricating silicon carbide inversion channel devices without the need to utilize P-type implantation
US6956238B2 (en) * 2000-10-03 2005-10-18 Cree, Inc. Silicon carbide power metal-oxide semiconductor field effect transistors having a shorting channel and methods of fabricating silicon carbide metal-oxide semiconductor field effect transistors having a shorting channel
US7221010B2 (en) 2002-12-20 2007-05-22 Cree, Inc. Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors
US6979863B2 (en) * 2003-04-24 2005-12-27 Cree, Inc. Silicon carbide MOSFETs with integrated antiparallel junction barrier Schottky free wheeling diodes and methods of fabricating the same
US7074643B2 (en) * 2003-04-24 2006-07-11 Cree, Inc. Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same
US7138292B2 (en) * 2003-09-10 2006-11-21 Lsi Logic Corporation Apparatus and method of manufacture for integrated circuit and CMOS device including epitaxially grown dielectric on silicon carbide
US7118970B2 (en) * 2004-06-22 2006-10-10 Cree, Inc. Methods of fabricating silicon carbide devices with hybrid well regions
US7615801B2 (en) * 2005-05-18 2009-11-10 Cree, Inc. High voltage silicon carbide devices having bi-directional blocking capabilities
US20060261346A1 (en) * 2005-05-18 2006-11-23 Sei-Hyung Ryu High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the same
US7414268B2 (en) 2005-05-18 2008-08-19 Cree, Inc. High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities
US7391057B2 (en) * 2005-05-18 2008-06-24 Cree, Inc. High voltage silicon carbide devices having bi-directional blocking capabilities
US7528040B2 (en) 2005-05-24 2009-05-05 Cree, Inc. Methods of fabricating silicon carbide devices having smooth channels
US8432012B2 (en) 2006-08-01 2013-04-30 Cree, Inc. Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same
US7728402B2 (en) * 2006-08-01 2010-06-01 Cree, Inc. Semiconductor devices including schottky diodes with controlled breakdown
EP2631951B1 (de) * 2006-08-17 2017-10-11 Cree, Inc. Bipolare Hochleistungstransistoren mit isoliertem Gatter
US8835987B2 (en) * 2007-02-27 2014-09-16 Cree, Inc. Insulated gate bipolar transistors including current suppressing layers
US20090159896A1 (en) * 2007-12-20 2009-06-25 General Electric Company Silicon carbide mosfet devices and methods of making
US8232558B2 (en) 2008-05-21 2012-07-31 Cree, Inc. Junction barrier Schottky diodes with current surge capability
US8288220B2 (en) * 2009-03-27 2012-10-16 Cree, Inc. Methods of forming semiconductor devices including epitaxial layers and related structures
US8294507B2 (en) 2009-05-08 2012-10-23 Cree, Inc. Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits
US8629509B2 (en) * 2009-06-02 2014-01-14 Cree, Inc. High voltage insulated gate bipolar transistors with minority carrier diverter
US8193848B2 (en) 2009-06-02 2012-06-05 Cree, Inc. Power switching devices having controllable surge current capabilities
US8541787B2 (en) * 2009-07-15 2013-09-24 Cree, Inc. High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability
US8354690B2 (en) 2009-08-31 2013-01-15 Cree, Inc. Solid-state pinch off thyristor circuits
US9117739B2 (en) 2010-03-08 2015-08-25 Cree, Inc. Semiconductor devices with heterojunction barrier regions and methods of fabricating same
US8415671B2 (en) 2010-04-16 2013-04-09 Cree, Inc. Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices
CN102376574B (zh) * 2010-08-09 2014-11-12 上海华虹宏力半导体制造有限公司 半导体器件的制造方法
JP5883563B2 (ja) * 2011-01-31 2016-03-15 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US9029945B2 (en) 2011-05-06 2015-05-12 Cree, Inc. Field effect transistor devices with low source resistance
US9142662B2 (en) 2011-05-06 2015-09-22 Cree, Inc. Field effect transistor devices with low source resistance
US9373617B2 (en) 2011-09-11 2016-06-21 Cree, Inc. High current, low switching loss SiC power module
US8680587B2 (en) 2011-09-11 2014-03-25 Cree, Inc. Schottky diode
WO2013036370A1 (en) 2011-09-11 2013-03-14 Cree, Inc. High current density power module comprising transistors with improved layout
US8664665B2 (en) 2011-09-11 2014-03-04 Cree, Inc. Schottky diode employing recesses for elements of junction barrier array
US8618582B2 (en) 2011-09-11 2013-12-31 Cree, Inc. Edge termination structure employing recesses for edge termination elements
US9640617B2 (en) 2011-09-11 2017-05-02 Cree, Inc. High performance power module
WO2016084158A1 (ja) 2014-11-26 2016-06-02 新電元工業株式会社 炭化珪素半導体装置及びその製造方法

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JP2542448B2 (ja) * 1990-05-24 1996-10-09 シャープ株式会社 電界効果トランジスタおよびその製造方法
US5612260A (en) * 1992-06-05 1997-03-18 Cree Research, Inc. Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures
JP3146694B2 (ja) * 1992-11-12 2001-03-19 富士電機株式会社 炭化けい素ｍｏｓｆｅｔおよび炭化けい素ｍｏｓｆｅｔの製造方法
US5322802A (en) * 1993-01-25 1994-06-21 North Carolina State University At Raleigh Method of fabricating silicon carbide field effect transistor
JPH0799312A (ja) * 1993-02-22 1995-04-11 Texas Instr Inc <Ti> 半導体装置とその製法
US5395780A (en) * 1993-10-12 1995-03-07 Goldstar Electron Co., Ltd. Process for fabricating MOS transistor
KR0153878B1 (ko) * 1994-06-07 1998-10-15 쿠미하시 요시유키 탄화규소반도체장치와 그 제조방법
US5543637A (en) * 1994-11-14 1996-08-06 North Carolina State University Silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein
US5510281A (en) * 1995-03-20 1996-04-23 General Electric Company Method of fabricating a self-aligned DMOS transistor device using SiC and spacers

Also Published As

Publication number Publication date
JP4173629B2 (ja) 2008-10-29
KR20010020583A (ko) 2001-03-15
JP2001509637A (ja) 2001-07-24
US5877041A (en) 1999-03-02
ATE494630T1 (de) 2011-01-15
AU8380098A (en) 1999-01-19
EP0996975A1 (de) 2000-05-03
EP0996975B8 (de) 2011-09-14
CA2296103A1 (en) 1999-01-07
EP0996975B1 (de) 2011-01-05
KR100592401B1 (ko) 2006-06-22
WO1999000833A1 (en) 1999-01-07

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