TW368746B - Semiconductor device and method for manufacturing the same - Google Patents
Semiconductor device and method for manufacturing the sameInfo
- Publication number
- TW368746B TW368746B TW086119650A TW86119650A TW368746B TW 368746 B TW368746 B TW 368746B TW 086119650 A TW086119650 A TW 086119650A TW 86119650 A TW86119650 A TW 86119650A TW 368746 B TW368746 B TW 368746B
- Authority
- TW
- Taiwan
- Prior art keywords
- forming
- insulation film
- dummy gate
- gate pattern
- gate
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 238000009413 insulation Methods 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 2
- 230000003679 aging effect Effects 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/78391—Field effect transistors with field effect produced by an insulated gate the gate comprising a layer which is used for its ferroelectric properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4983—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/516—Insulating materials associated therewith with at least one ferroelectric layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66537—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a self aligned punch through stopper or threshold implant under the gate region
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8356493A JPH10189966A (ja) | 1996-12-26 | 1996-12-26 | 半導体装置及びその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW368746B true TW368746B (en) | 1999-09-01 |
Family
ID=18449297
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086119650A TW368746B (en) | 1996-12-26 | 1997-12-24 | Semiconductor device and method for manufacturing the same |
Country Status (4)
Country | Link |
---|---|
US (1) | US6278164B1 (zh) |
JP (1) | JPH10189966A (zh) |
KR (1) | KR100296004B1 (zh) |
TW (1) | TW368746B (zh) |
Families Citing this family (73)
Publication number | Priority date | Publication date | Assignee | Title |
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US6054355A (en) | 1997-06-30 | 2000-04-25 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor device which includes forming a dummy gate |
US6251763B1 (en) * | 1997-06-30 | 2001-06-26 | Kabushiki Kaisha Toshiba | Semiconductor device and method for manufacturing same |
DE19840824C1 (de) * | 1998-09-07 | 1999-10-21 | Siemens Ag | Ferroelektrischer Transistor, dessen Verwendung in einer Speicherzellenanordnung und Verfahren zu dessen Herstellung |
DE19857038A1 (de) * | 1998-12-10 | 2000-06-29 | Siemens Ag | FEMFET-Vorrichtung und Verfahren zu deren Herstellung |
JP3023355B1 (ja) | 1998-12-25 | 2000-03-21 | 松下電器産業株式会社 | 半導体装置及びその製造方法 |
KR100518239B1 (ko) * | 1998-12-30 | 2005-12-06 | 주식회사 하이닉스반도체 | 반도체 장치 제조방법 |
JP4987796B2 (ja) * | 1999-01-08 | 2012-07-25 | 株式会社東芝 | 半導体装置の製造方法 |
JP4221100B2 (ja) * | 1999-01-13 | 2009-02-12 | エルピーダメモリ株式会社 | 半導体装置 |
US6737716B1 (en) | 1999-01-29 | 2004-05-18 | Kabushiki Kaisha Toshiba | Semiconductor device and method of manufacturing the same |
JP2000252372A (ja) * | 1999-02-26 | 2000-09-14 | Sharp Corp | 半導体メモリ装置及びその製造方法 |
JP4237332B2 (ja) | 1999-04-30 | 2009-03-11 | 株式会社東芝 | 半導体装置の製造方法 |
TW495980B (en) * | 1999-06-11 | 2002-07-21 | Koninkl Philips Electronics Nv | A method of manufacturing a semiconductor device |
KR100338104B1 (ko) * | 1999-06-30 | 2002-05-24 | 박종섭 | 반도체 소자의 제조 방법 |
US6617226B1 (en) | 1999-06-30 | 2003-09-09 | Kabushiki Kaisha Toshiba | Semiconductor device and method for manufacturing the same |
JP4491858B2 (ja) * | 1999-07-06 | 2010-06-30 | ソニー株式会社 | 半導体装置の製造方法 |
US6171910B1 (en) * | 1999-07-21 | 2001-01-09 | Motorola Inc. | Method for forming a semiconductor device |
US6482724B1 (en) * | 1999-09-07 | 2002-11-19 | Texas Instruments Incorporated | Integrated circuit asymmetric transistors |
JP2001196576A (ja) * | 2000-01-12 | 2001-07-19 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
KR100350056B1 (ko) * | 2000-03-09 | 2002-08-24 | 삼성전자 주식회사 | 다마신 게이트 공정에서 자기정렬콘택패드 형성 방법 |
WO2001071807A1 (fr) | 2000-03-24 | 2001-09-27 | Fujitsu Limited | Dispositif a semi-conducteur et son procede de fabrication |
JP3906005B2 (ja) * | 2000-03-27 | 2007-04-18 | 株式会社東芝 | 半導体装置の製造方法 |
JP2001284466A (ja) * | 2000-03-29 | 2001-10-12 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
KR100372639B1 (ko) * | 2000-06-21 | 2003-02-17 | 주식회사 하이닉스반도체 | 모스팻 소자의 제조방법 |
US6472274B1 (en) * | 2000-06-29 | 2002-10-29 | International Business Machines Corporation | MOSFET with self-aligned channel edge implant and method |
KR100372641B1 (ko) * | 2000-06-29 | 2003-02-17 | 주식회사 하이닉스반도체 | 다마신 공정을 이용한 반도체 소자의 제조방법 |
JP2002026312A (ja) * | 2000-07-06 | 2002-01-25 | National Institute Of Advanced Industrial & Technology | 半導体装置 |
JP2002110932A (ja) * | 2000-09-28 | 2002-04-12 | Toshiba Corp | 半導体装置及びその製造方法 |
JP4096507B2 (ja) * | 2000-09-29 | 2008-06-04 | 富士通株式会社 | 半導体装置の製造方法 |
JP3669919B2 (ja) * | 2000-12-04 | 2005-07-13 | シャープ株式会社 | 半導体装置の製造方法 |
AU2002228811A1 (en) * | 2000-12-07 | 2002-06-18 | Advanced Micro Devices Inc. | Damascene nisi metal gate high-k transistor |
KR100643571B1 (ko) * | 2000-12-30 | 2006-11-10 | 주식회사 하이닉스반도체 | 금속 대머신 게이트 형성방법 |
US6713846B1 (en) * | 2001-01-26 | 2004-03-30 | Aviza Technology, Inc. | Multilayer high κ dielectric films |
JP3539491B2 (ja) * | 2001-02-26 | 2004-07-07 | シャープ株式会社 | 半導体装置の製造方法 |
JP4887566B2 (ja) * | 2001-03-27 | 2012-02-29 | 独立行政法人産業技術総合研究所 | 半導体不揮発性記憶素子及びその製造方法 |
US6531324B2 (en) * | 2001-03-28 | 2003-03-11 | Sharp Laboratories Of America, Inc. | MFOS memory transistor & method of fabricating same |
JP2002313966A (ja) * | 2001-04-16 | 2002-10-25 | Yasuo Tarui | トランジスタ型強誘電体不揮発性記憶素子とその製造方法 |
US20020182385A1 (en) * | 2001-05-29 | 2002-12-05 | Rensselaer Polytechnic Institute | Atomic layer passivation |
KR100419744B1 (ko) * | 2001-06-28 | 2004-02-25 | 주식회사 하이닉스반도체 | 트랜지스터 및 그의 제조 방법 |
KR100442780B1 (ko) * | 2001-12-24 | 2004-08-04 | 동부전자 주식회사 | 반도체 소자의 트랜지스터 제조 방법 |
KR100412141B1 (ko) * | 2001-12-29 | 2003-12-31 | 주식회사 하이닉스반도체 | 반도체 소자의 게이트 전극 형성방법 |
KR100452632B1 (ko) * | 2001-12-29 | 2004-10-14 | 주식회사 하이닉스반도체 | 반도체 소자의 트랜지스터 제조 방법 |
JP2003309188A (ja) * | 2002-04-15 | 2003-10-31 | Nec Corp | 半導体装置およびその製造方法 |
US6621114B1 (en) | 2002-05-20 | 2003-09-16 | Advanced Micro Devices, Inc. | MOS transistors with high-k dielectric gate insulator for reducing remote scattering |
US6794721B2 (en) * | 2002-12-23 | 2004-09-21 | International Business Machines Corporation | Integration system via metal oxide conversion |
KR100937650B1 (ko) * | 2002-12-30 | 2010-01-19 | 동부일렉트로닉스 주식회사 | 반도체 장치의 트랜지스터 제조 방법 |
JP4209206B2 (ja) * | 2003-01-14 | 2009-01-14 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置の製造方法 |
KR100499159B1 (ko) | 2003-02-28 | 2005-07-01 | 삼성전자주식회사 | 리세스 채널을 갖는 반도체장치 및 그 제조방법 |
KR100553703B1 (ko) | 2003-10-01 | 2006-02-24 | 삼성전자주식회사 | 반도체 소자 및 그 형성 방법 |
KR101051801B1 (ko) * | 2003-11-13 | 2011-07-25 | 매그나칩 반도체 유한회사 | 반도체 소자의 트랜지스터 및 그 제조 방법 |
JP2004266291A (ja) * | 2004-05-06 | 2004-09-24 | Toshiba Corp | 半導体装置 |
US7075155B1 (en) * | 2004-06-14 | 2006-07-11 | Advanced Micro Devices, Inc. | Structure for protecting a semiconductor circuit from electrostatic discharge and a method for forming the structure |
JP4918367B2 (ja) * | 2005-01-24 | 2012-04-18 | スパンション エルエルシー | 半導体装置及びその製造方法 |
JP2007005489A (ja) * | 2005-06-22 | 2007-01-11 | Seiko Instruments Inc | 半導体装置の製造方法 |
JP2007258267A (ja) * | 2006-03-20 | 2007-10-04 | Toshiba Corp | 半導体装置及びその製造方法 |
JP4950599B2 (ja) * | 2006-09-01 | 2012-06-13 | 株式会社東芝 | 半導体装置の製造方法 |
US7858471B2 (en) | 2006-09-13 | 2010-12-28 | Micron Technology, Inc. | Methods of fabricating an access transistor for an integrated circuit device, methods of fabricating periphery transistors and access transistors, and methods of fabricating an access device comprising access transistors in an access circuitry region and peripheral transistors in a peripheral circuitry region spaced from the access circuitry region |
KR100766500B1 (ko) * | 2006-10-20 | 2007-10-15 | 삼성전자주식회사 | 반도체 소자 및 그 형성 방법 |
JP5253797B2 (ja) * | 2007-12-07 | 2013-07-31 | 株式会社東芝 | 半導体装置 |
JP2009278043A (ja) * | 2008-05-19 | 2009-11-26 | Renesas Technology Corp | 半導体装置の製造方法および半導体装置 |
US7964487B2 (en) * | 2008-06-04 | 2011-06-21 | International Business Machines Corporation | Carrier mobility enhanced channel devices and method of manufacture |
JP5414036B2 (ja) * | 2009-03-19 | 2014-02-12 | 独立行政法人産業技術総合研究所 | 絶縁ゲート型半導体装置の製造方法 |
JP2012156229A (ja) * | 2011-01-25 | 2012-08-16 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
JP5968708B2 (ja) * | 2012-01-23 | 2016-08-10 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US8860135B2 (en) | 2012-02-21 | 2014-10-14 | United Microelectronics Corp. | Semiconductor structure having aluminum layer with high reflectivity |
JP5390654B2 (ja) * | 2012-03-08 | 2014-01-15 | 株式会社東芝 | 半導体装置の製造方法 |
FR2995135B1 (fr) * | 2012-09-05 | 2015-12-04 | Commissariat Energie Atomique | Procede de realisation de transistors fet |
US8796751B2 (en) | 2012-11-20 | 2014-08-05 | Micron Technology, Inc. | Transistors, memory cells and semiconductor constructions |
US8872241B1 (en) * | 2013-05-20 | 2014-10-28 | International Business Machines Corporation | Multi-direction wiring for replacement gate lines |
US9337045B2 (en) | 2014-08-13 | 2016-05-10 | Globalfoundries Inc. | Methods of forming a semiconductor circuit element and semiconductor circuit element |
US9679813B2 (en) | 2015-05-12 | 2017-06-13 | United Microelectronics Corp. | Semiconductor structure and process for forming plug including layer with pulled back sidewall part |
KR101588280B1 (ko) | 2015-10-05 | 2016-01-25 | (주)신흥이앤지 | 지지강선의 장력조절수단이 마련되는 프리스트레스 거더교 |
US10714621B2 (en) * | 2016-12-14 | 2020-07-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and method of forming doped channel thereof |
US20190019472A1 (en) * | 2017-07-13 | 2019-01-17 | Vanguard International Semiconductor Corporation | Display system and method for forming an output buffer of a source driver |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3731163A (en) * | 1972-03-22 | 1973-05-01 | United Aircraft Corp | Low voltage charge storage memory element |
JPS62136022A (ja) * | 1984-11-27 | 1987-06-19 | Seiko Epson Corp | 半導体装置の製造方法 |
US5378652A (en) * | 1989-04-19 | 1995-01-03 | Kabushiki Kaisha Toshiba | Method of making a through hole in multi-layer insulating films |
US5024959A (en) * | 1989-09-25 | 1991-06-18 | Motorola, Inc. | CMOS process using doped glass layer |
US5258645A (en) * | 1990-03-09 | 1993-11-02 | Fujitsu Limited | Semiconductor device having MOS transistor and a sidewall with a double insulator layer structure |
JP3029653B2 (ja) | 1990-09-14 | 2000-04-04 | 株式会社東芝 | 半導体装置の製造方法 |
US5289030A (en) * | 1991-03-06 | 1994-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with oxide layer |
US5384729A (en) * | 1991-10-28 | 1995-01-24 | Rohm Co., Ltd. | Semiconductor storage device having ferroelectric film |
US5166096A (en) * | 1991-10-29 | 1992-11-24 | International Business Machines Corporation | Process for fabricating self-aligned contact studs for semiconductor structures |
EP0550255B1 (en) * | 1991-12-31 | 1998-03-11 | STMicroelectronics, Inc. | Transistor spacer structure |
JPH0738107A (ja) * | 1993-07-23 | 1995-02-07 | Kawasaki Steel Corp | 半導体装置の製造方法 |
US5733812A (en) * | 1993-11-15 | 1998-03-31 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device with a field-effect transistor having a lower resistance impurity diffusion layer, and method of manufacturing the same |
JPH0837296A (ja) * | 1994-07-26 | 1996-02-06 | Toshiba Corp | 半導体装置の製造方法 |
-
1996
- 1996-12-26 JP JP8356493A patent/JPH10189966A/ja active Pending
-
1997
- 1997-12-23 US US08/996,704 patent/US6278164B1/en not_active Expired - Fee Related
- 1997-12-24 TW TW086119650A patent/TW368746B/zh not_active IP Right Cessation
- 1997-12-24 KR KR1019970073299A patent/KR100296004B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR100296004B1 (ko) | 2001-08-07 |
US6278164B1 (en) | 2001-08-21 |
JPH10189966A (ja) | 1998-07-21 |
KR19980064586A (ko) | 1998-10-07 |
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