JPS5793580A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5793580A JPS5793580A JP16988780A JP16988780A JPS5793580A JP S5793580 A JPS5793580 A JP S5793580A JP 16988780 A JP16988780 A JP 16988780A JP 16988780 A JP16988780 A JP 16988780A JP S5793580 A JPS5793580 A JP S5793580A
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- film
- electrode
- boundary
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 230000000087 stabilizing effect Effects 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 230000005669 field effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 239000005368 silicate glass Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To eliminate the production of a leakage current between a gate electrode and other electrode by providing means for removing a surface stabilizing film in strip enclosing the gate electrode of a semiconductor device for covering the boundary stabilized film on the surface. CONSTITUTION:To manufacture a semiconductor device having a field effect transistor, after an operating element is completed, a surface stabilizing film such as dioxidized silicon (SiO2), phosphorus silicate glass (FSG) is formed, and means for etching the groove of narrow band width surrounding the gate electrode is provided at the surface stabilizing film. For example, a gate electrode 2, a source electrode 3 and a drain electrode 4 are formed on a semiconductor substrate 1, the film 5 is covered on the overall surface, the gate electrode is then surrounded, a strip region 6 enclosed with the width of 0.2mum is removed by an etching method, and a leakage current is eliminated due to the boundary level generated between the surface stabilizing film and the boundary.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16988780A JPS5793580A (en) | 1980-12-02 | 1980-12-02 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16988780A JPS5793580A (en) | 1980-12-02 | 1980-12-02 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5793580A true JPS5793580A (en) | 1982-06-10 |
Family
ID=15894791
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16988780A Pending JPS5793580A (en) | 1980-12-02 | 1980-12-02 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5793580A (en) |
-
1980
- 1980-12-02 JP JP16988780A patent/JPS5793580A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5681974A (en) | Manufacture of mos type semiconductor device | |
| JPS57196573A (en) | Manufacture of mos type semiconductor device | |
| JPS56150871A (en) | Semiconductor device | |
| JPS5736842A (en) | Semiconductor integrated circuit device | |
| JPS5793580A (en) | Semiconductor device | |
| JPS54161282A (en) | Manufacture of mos semiconductor device | |
| JPS5759384A (en) | Manufacture of longitudinal type insulated field effect semiconductor device | |
| JPS56155531A (en) | Manufacture of semiconductor device | |
| JPS5791537A (en) | Manufacture of semiconductor device | |
| JPS5552262A (en) | Mos semiconductor device | |
| JPS6489457A (en) | Manufacture of semiconductor device | |
| JPS5534492A (en) | Semiconductor integrated circuit device having mis field effect type transistor and its manufacture | |
| JPS566474A (en) | Manufacture of semiconductor device | |
| JPS57100768A (en) | Manufacture of field effect semiconductor device | |
| JPS5679446A (en) | Production of semiconductor device | |
| JPS57141966A (en) | Manufacture of semiconductor device | |
| JPS5739579A (en) | Mos semiconductor device and manufacture thereof | |
| JPS572579A (en) | Manufacture of junction type field effect transistor | |
| JPS57112074A (en) | Semiconductor device | |
| JPS5474383A (en) | Manufacture of semiconductor device | |
| JPS5788724A (en) | Manufacture of semiconductor device | |
| JPS5739532A (en) | Manufacture of compound semiconductor device | |
| JPS56104470A (en) | Semiconductor device and manufacture thereof | |
| JPS56146281A (en) | Manufacture of semiconductor integrated circuit | |
| JPS56142654A (en) | Manufacture of semiconductor device |