JPS57112074A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57112074A
JPS57112074A JP18731780A JP18731780A JPS57112074A JP S57112074 A JPS57112074 A JP S57112074A JP 18731780 A JP18731780 A JP 18731780A JP 18731780 A JP18731780 A JP 18731780A JP S57112074 A JPS57112074 A JP S57112074A
Authority
JP
Japan
Prior art keywords
wafer
substrate
main surface
surface direction
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18731780A
Other languages
Japanese (ja)
Inventor
Izumi Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP18731780A priority Critical patent/JPS57112074A/en
Publication of JPS57112074A publication Critical patent/JPS57112074A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To reduce the number of crystal defects and reduce the leakage current of a device by a method wherein a substrate whose main surface is inclined by a specified degree from (100) crystal surface direction toward (110) crystal surface direction is used as the substrate for making a device composed of MOSFET. CONSTITUTION:A source region and a drain region which are of different conductive types each other are formed on a main surface of a substrate. A gate electrode is formed on an oxide film on a channel region which covers the main surface and a device such as MOS type IC is composed. A wafer which is sliced in such a manner that the main surface is inclined by 6 deg.+ or -2 deg. from (100) surface direction to (110) surface direction is used as the said substrate. With above configuration, the number of crystal defects can be reduced compared with a conventionally used wafer which has (100) surface and the waiting time source current (leakage current) of the device such as CMOS made of the said wafer can be reduced. Thus, ratio of successful chips per each wafer can be improved.
JP18731780A 1980-12-29 1980-12-29 Semiconductor device Pending JPS57112074A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18731780A JPS57112074A (en) 1980-12-29 1980-12-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18731780A JPS57112074A (en) 1980-12-29 1980-12-29 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57112074A true JPS57112074A (en) 1982-07-12

Family

ID=16203881

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18731780A Pending JPS57112074A (en) 1980-12-29 1980-12-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57112074A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5212394A (en) * 1989-03-17 1993-05-18 Sumitomo Electric Industries, Ltd. Compound semiconductor wafer with defects propagating prevention means
WO2004102668A1 (en) * 2003-05-15 2004-11-25 Shin-Etsu Handotai Co. Ltd. Soi wafer and process for producing the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50159979A (en) * 1974-06-13 1975-12-24

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50159979A (en) * 1974-06-13 1975-12-24

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5212394A (en) * 1989-03-17 1993-05-18 Sumitomo Electric Industries, Ltd. Compound semiconductor wafer with defects propagating prevention means
WO2004102668A1 (en) * 2003-05-15 2004-11-25 Shin-Etsu Handotai Co. Ltd. Soi wafer and process for producing the same
EP1624488A1 (en) * 2003-05-15 2006-02-08 Shin-Etsu Handotai Company Limited Soi wafer and process for producing the same
US7357839B2 (en) 2003-05-15 2008-04-15 Shin-Etsu Handotai Co., Ltd. SOI wafer and a method of producing the same
EP1624488A4 (en) * 2003-05-15 2009-10-28 Shinetsu Handotai Kk Soi wafer and process for producing the same

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