JP5986776B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5986776B2
JP5986776B2 JP2012079460A JP2012079460A JP5986776B2 JP 5986776 B2 JP5986776 B2 JP 5986776B2 JP 2012079460 A JP2012079460 A JP 2012079460A JP 2012079460 A JP2012079460 A JP 2012079460A JP 5986776 B2 JP5986776 B2 JP 5986776B2
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Prior art keywords
metal oxide
oxide film
insulating film
film
oxygen
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JP2012079460A
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Japanese (ja)
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JP2012216834A (ja
JP2012216834A5 (enExample
Inventor
肇 中埜
肇 中埜
舞 杉川
舞 杉川
耕生 野田
耕生 野田
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2012216834A5 publication Critical patent/JP2012216834A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/875—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being semiconductor metal oxide, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers

Landscapes

  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
  • Non-Volatile Memory (AREA)
JP2012079460A 2011-03-31 2012-03-30 半導体装置 Active JP5986776B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012079460A JP5986776B2 (ja) 2011-03-31 2012-03-30 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011078111 2011-03-31
JP2011078111 2011-03-31
JP2012079460A JP5986776B2 (ja) 2011-03-31 2012-03-30 半導体装置

Related Child Applications (1)

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JP2016154393A Division JP6255069B2 (ja) 2011-03-31 2016-08-05 半導体装置

Publications (3)

Publication Number Publication Date
JP2012216834A JP2012216834A (ja) 2012-11-08
JP2012216834A5 JP2012216834A5 (enExample) 2015-07-09
JP5986776B2 true JP5986776B2 (ja) 2016-09-06

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JP2012079460A Active JP5986776B2 (ja) 2011-03-31 2012-03-30 半導体装置
JP2016154393A Active JP6255069B2 (ja) 2011-03-31 2016-08-05 半導体装置
JP2017231412A Withdrawn JP2018032882A (ja) 2011-03-31 2017-12-01 半導体装置
JP2020108752A Active JP6925485B2 (ja) 2011-03-31 2020-06-24 半導体装置
JP2021127481A Active JP7213312B2 (ja) 2011-03-31 2021-08-03 半導体装置
JP2023004321A Active JP7395036B2 (ja) 2011-03-31 2023-01-16 半導体装置
JP2023200790A Active JP7561951B2 (ja) 2011-03-31 2023-11-28 半導体装置
JP2024165124A Active JP7705535B2 (ja) 2011-03-31 2024-09-24 半導体装置
JP2025108781A Pending JP2025138784A (ja) 2011-03-31 2025-06-27 半導体装置

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JP2016154393A Active JP6255069B2 (ja) 2011-03-31 2016-08-05 半導体装置
JP2017231412A Withdrawn JP2018032882A (ja) 2011-03-31 2017-12-01 半導体装置
JP2020108752A Active JP6925485B2 (ja) 2011-03-31 2020-06-24 半導体装置
JP2021127481A Active JP7213312B2 (ja) 2011-03-31 2021-08-03 半導体装置
JP2023004321A Active JP7395036B2 (ja) 2011-03-31 2023-01-16 半導体装置
JP2023200790A Active JP7561951B2 (ja) 2011-03-31 2023-11-28 半導体装置
JP2024165124A Active JP7705535B2 (ja) 2011-03-31 2024-09-24 半導体装置
JP2025108781A Pending JP2025138784A (ja) 2011-03-31 2025-06-27 半導体装置

Country Status (4)

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US (3) US9082860B2 (enExample)
JP (9) JP5986776B2 (enExample)
KR (7) KR101971290B1 (enExample)
TW (3) TWI609493B (enExample)

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JP2013182992A (ja) * 2012-03-01 2013-09-12 Toshiba Corp 半導体装置
JP2013183062A (ja) * 2012-03-02 2013-09-12 Toshiba Corp 半導体装置
JP6035195B2 (ja) 2012-05-01 2016-11-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR102078213B1 (ko) 2012-07-20 2020-02-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법
TWI608616B (zh) 2012-11-15 2017-12-11 半導體能源研究所股份有限公司 半導體裝置
CN108493253B (zh) * 2012-11-30 2023-04-25 株式会社半导体能源研究所 半导体装置
KR102798241B1 (ko) 2012-12-25 2025-04-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
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JP2016001712A (ja) * 2013-11-29 2016-01-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
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KR102318728B1 (ko) * 2014-04-18 2021-10-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치와 이를 가지는 표시 장치
JP6722980B2 (ja) 2014-05-09 2020-07-15 株式会社半導体エネルギー研究所 表示装置および発光装置、並びに電子機器
KR102333604B1 (ko) * 2014-05-15 2021-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 이 반도체 장치를 포함하는 표시 장치
TWI663733B (zh) * 2014-06-18 2019-06-21 日商半導體能源研究所股份有限公司 電晶體及半導體裝置
TWI666776B (zh) 2014-06-20 2019-07-21 日商半導體能源研究所股份有限公司 半導體裝置以及包括該半導體裝置的顯示裝置
US9722091B2 (en) 2014-09-12 2017-08-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
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