KR101971290B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR101971290B1
KR101971290B1 KR1020120033203A KR20120033203A KR101971290B1 KR 101971290 B1 KR101971290 B1 KR 101971290B1 KR 1020120033203 A KR1020120033203 A KR 1020120033203A KR 20120033203 A KR20120033203 A KR 20120033203A KR 101971290 B1 KR101971290 B1 KR 101971290B1
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South Korea
Prior art keywords
metal oxide
oxide film
insulating film
film
oxygen
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KR1020120033203A
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Korean (ko)
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KR20120112228A (ko
Inventor
다다시 나까노
마이 스기까와
고세이 노다
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/875—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being semiconductor metal oxide, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers

Landscapes

  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Liquid Crystal (AREA)
  • Formation Of Insulating Films (AREA)
  • Non-Volatile Memory (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020120033203A 2011-03-31 2012-03-30 반도체 장치 Active KR101971290B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011078111 2011-03-31
JPJP-P-2011-078111 2011-03-31

Related Child Applications (1)

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KR1020190043505A Division KR102103972B1 (ko) 2011-03-31 2019-04-15 반도체 장치

Publications (2)

Publication Number Publication Date
KR20120112228A KR20120112228A (ko) 2012-10-11
KR101971290B1 true KR101971290B1 (ko) 2019-04-22

Family

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Family Applications (7)

Application Number Title Priority Date Filing Date
KR1020120033203A Active KR101971290B1 (ko) 2011-03-31 2012-03-30 반도체 장치
KR1020190043505A Active KR102103972B1 (ko) 2011-03-31 2019-04-15 반도체 장치
KR1020200046692A Active KR102267380B1 (ko) 2011-03-31 2020-04-17 반도체 장치
KR1020210077329A Active KR102429561B1 (ko) 2011-03-31 2021-06-15 반도체 장치
KR1020220095683A Active KR102660906B1 (ko) 2011-03-31 2022-08-01 반도체 장치
KR1020240053450A Active KR102837184B1 (ko) 2011-03-31 2024-04-22 반도체 장치
KR1020250096725A Pending KR20250115955A (ko) 2011-03-31 2025-07-17 반도체 장치

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KR1020190043505A Active KR102103972B1 (ko) 2011-03-31 2019-04-15 반도체 장치
KR1020200046692A Active KR102267380B1 (ko) 2011-03-31 2020-04-17 반도체 장치
KR1020210077329A Active KR102429561B1 (ko) 2011-03-31 2021-06-15 반도체 장치
KR1020220095683A Active KR102660906B1 (ko) 2011-03-31 2022-08-01 반도체 장치
KR1020240053450A Active KR102837184B1 (ko) 2011-03-31 2024-04-22 반도체 장치
KR1020250096725A Pending KR20250115955A (ko) 2011-03-31 2025-07-17 반도체 장치

Country Status (4)

Country Link
US (3) US9082860B2 (enExample)
JP (9) JP5986776B2 (enExample)
KR (7) KR101971290B1 (enExample)
TW (3) TWI609493B (enExample)

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JP2013183062A (ja) * 2012-03-02 2013-09-12 Toshiba Corp 半導体装置
JP6035195B2 (ja) 2012-05-01 2016-11-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR102078213B1 (ko) 2012-07-20 2020-02-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법
TWI608616B (zh) 2012-11-15 2017-12-11 半導體能源研究所股份有限公司 半導體裝置
CN108493253B (zh) * 2012-11-30 2023-04-25 株式会社半导体能源研究所 半导体装置
KR102798241B1 (ko) 2012-12-25 2025-04-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TWI614813B (zh) 2013-01-21 2018-02-11 半導體能源研究所股份有限公司 半導體裝置的製造方法
US20150008428A1 (en) 2013-07-08 2015-01-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
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JP2016001712A (ja) * 2013-11-29 2016-01-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9564535B2 (en) * 2014-02-28 2017-02-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic appliance including the semiconductor device, the display device, and the display module
TWI559555B (zh) * 2014-03-13 2016-11-21 國立臺灣師範大學 薄膜電晶體及其製造方法
KR102318728B1 (ko) * 2014-04-18 2021-10-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치와 이를 가지는 표시 장치
JP6722980B2 (ja) 2014-05-09 2020-07-15 株式会社半導体エネルギー研究所 表示装置および発光装置、並びに電子機器
KR102333604B1 (ko) * 2014-05-15 2021-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 이 반도체 장치를 포함하는 표시 장치
TWI663733B (zh) * 2014-06-18 2019-06-21 日商半導體能源研究所股份有限公司 電晶體及半導體裝置
TWI666776B (zh) 2014-06-20 2019-07-21 日商半導體能源研究所股份有限公司 半導體裝置以及包括該半導體裝置的顯示裝置
US9722091B2 (en) 2014-09-12 2017-08-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2016063160A1 (en) * 2014-10-20 2016-04-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, display device, and display module
KR102337370B1 (ko) * 2014-10-22 2021-12-09 삼성디스플레이 주식회사 반도체 소자 및 반도체 소자의 제조 방법
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JP6705663B2 (ja) * 2015-03-06 2020-06-03 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
TWI695415B (zh) 2015-03-30 2020-06-01 日商半導體能源研究所股份有限公司 半導體裝置的製造方法
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