JP5826532B2 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
- Publication number
- JP5826532B2 JP5826532B2 JP2011138553A JP2011138553A JP5826532B2 JP 5826532 B2 JP5826532 B2 JP 5826532B2 JP 2011138553 A JP2011138553 A JP 2011138553A JP 2011138553 A JP2011138553 A JP 2011138553A JP 5826532 B2 JP5826532 B2 JP 5826532B2
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- substrate
- sealing resin
- wiring
- electronic component
- insulating layer
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
- H10W70/614—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together the multiple chips being integrally enclosed
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/01—Manufacture or treatment
- H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
- H10W70/08—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs
- H10W70/09—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
- H10W70/63—Vias, e.g. via plugs
- H10W70/635—Through-vias
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/401—Package configurations characterised by multiple insulating or insulated package substrates, interposers or RDLs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/0198—Manufacture or treatment batch processes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/941—Dispositions of bond pads
- H10W72/9413—Dispositions of bond pads on encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
Landscapes
- Production Of Multi-Layered Print Wiring Board (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011138553A JP5826532B2 (ja) | 2010-07-15 | 2011-06-22 | 半導体装置及びその製造方法 |
| US13/181,884 US8482117B2 (en) | 2010-07-15 | 2011-07-13 | Semiconductor device with electronic component incorporation substrate |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010160869 | 2010-07-15 | ||
| JP2010160869 | 2010-07-15 | ||
| JP2011138553A JP5826532B2 (ja) | 2010-07-15 | 2011-06-22 | 半導体装置及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012039090A JP2012039090A (ja) | 2012-02-23 |
| JP2012039090A5 JP2012039090A5 (https=) | 2014-07-17 |
| JP5826532B2 true JP5826532B2 (ja) | 2015-12-02 |
Family
ID=45466326
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011138553A Active JP5826532B2 (ja) | 2010-07-15 | 2011-06-22 | 半導体装置及びその製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US8482117B2 (https=) |
| JP (1) | JP5826532B2 (https=) |
Families Citing this family (60)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5563918B2 (ja) * | 2010-07-22 | 2014-07-30 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 回路装置の製造方法 |
| US10192796B2 (en) * | 2012-09-14 | 2019-01-29 | STATS ChipPAC Pte. Ltd. | Semiconductor device and method of forming dual-sided interconnect structures in FO-WLCSP |
| JP6320681B2 (ja) * | 2013-03-29 | 2018-05-09 | ローム株式会社 | 半導体装置 |
| JP5466785B1 (ja) * | 2013-08-12 | 2014-04-09 | 太陽誘電株式会社 | 回路モジュール及びその製造方法 |
| JP6274058B2 (ja) * | 2014-09-22 | 2018-02-07 | 株式会社デンソー | 電子装置、及び電子装置を備えた電子構造体 |
| KR20160084143A (ko) * | 2015-01-05 | 2016-07-13 | 삼성전기주식회사 | 전자소자 내장기판 및 그 제조 방법 |
| US10566289B2 (en) | 2015-10-13 | 2020-02-18 | Samsung Electronics Co., Ltd. | Fan-out semiconductor package and manufacturing method thereof |
| JP6561764B2 (ja) * | 2015-10-23 | 2019-08-21 | セイコーエプソン株式会社 | 発振器、電子機器および基地局 |
| KR102450576B1 (ko) * | 2016-01-22 | 2022-10-07 | 삼성전자주식회사 | 전자 부품 패키지 및 그 제조방법 |
| US10276467B2 (en) * | 2016-03-25 | 2019-04-30 | Samsung Electro-Mechanics Co., Ltd. | Fan-out semiconductor package |
| US10818621B2 (en) * | 2016-03-25 | 2020-10-27 | Samsung Electronics Co., Ltd. | Fan-out semiconductor package |
| KR101999625B1 (ko) * | 2016-03-25 | 2019-07-17 | 삼성전자주식회사 | 팬-아웃 반도체 패키지 |
| KR102017635B1 (ko) * | 2016-03-25 | 2019-10-08 | 삼성전자주식회사 | 팬-아웃 반도체 패키지 |
| KR102045236B1 (ko) * | 2016-06-08 | 2019-12-02 | 삼성전자주식회사 | 팬-아웃 반도체 패키지 |
| US9859222B1 (en) * | 2016-06-08 | 2018-01-02 | Samsung Electro-Mechanics Co., Ltd. | Fan-out semiconductor package |
| KR102049255B1 (ko) * | 2016-06-20 | 2019-11-28 | 삼성전자주식회사 | 팬-아웃 반도체 패키지 |
| US20170365567A1 (en) * | 2016-06-20 | 2017-12-21 | Samsung Electro-Mechanics Co., Ltd. | Fan-out semiconductor package |
| KR102003390B1 (ko) * | 2016-06-20 | 2019-07-24 | 삼성전자주식회사 | 팬-아웃 반도체 패키지 |
| US10600748B2 (en) | 2016-06-20 | 2020-03-24 | Samsung Electronics Co., Ltd. | Fan-out semiconductor package |
| JP6562467B2 (ja) | 2016-06-21 | 2019-08-21 | サムスン エレクトロニクス カンパニー リミテッド | ファン−アウト半導体パッケージ |
| KR101952863B1 (ko) * | 2016-06-21 | 2019-02-28 | 삼성전기주식회사 | 팬-아웃 반도체 패키지 |
| KR101963277B1 (ko) * | 2016-06-23 | 2019-03-29 | 삼성전기주식회사 | 팬-아웃 반도체 패키지 |
| KR101952861B1 (ko) * | 2016-06-23 | 2019-02-28 | 삼성전기주식회사 | 팬-아웃 반도체 패키지 |
| KR101973428B1 (ko) * | 2016-06-23 | 2019-04-29 | 삼성전기주식회사 | 팬-아웃 반도체 패키지 |
| US10229865B2 (en) | 2016-06-23 | 2019-03-12 | Samsung Electro-Mechanics Co., Ltd. | Fan-out semiconductor package |
| US10580728B2 (en) | 2016-06-23 | 2020-03-03 | Samsung Electronics Co., Ltd. | Fan-out semiconductor package |
| KR101982045B1 (ko) * | 2016-08-11 | 2019-08-28 | 삼성전자주식회사 | 팬-아웃 반도체 패키지 |
| KR101994750B1 (ko) * | 2016-08-22 | 2019-07-01 | 삼성전기주식회사 | 팬-아웃 반도체 패키지 |
| US10061967B2 (en) | 2016-08-22 | 2018-08-28 | Samsung Electro-Mechanics Co., Ltd. | Fan-out semiconductor package |
| KR101952862B1 (ko) * | 2016-08-30 | 2019-02-27 | 삼성전기주식회사 | 팬-아웃 반도체 패키지 |
| KR101982044B1 (ko) * | 2016-08-31 | 2019-05-24 | 삼성전기주식회사 | 팬-아웃 반도체 패키지 |
| KR101973430B1 (ko) | 2016-09-19 | 2019-04-29 | 삼성전기주식회사 | 팬-아웃 반도체 패키지 |
| KR102073294B1 (ko) | 2016-09-29 | 2020-02-04 | 삼성전자주식회사 | 팬-아웃 반도체 패키지 |
| KR101982047B1 (ko) | 2016-09-29 | 2019-05-24 | 삼성전기주식회사 | 팬-아웃 반도체 패키지 |
| KR101952864B1 (ko) * | 2016-09-30 | 2019-02-27 | 삼성전기주식회사 | 팬-아웃 반도체 패키지 |
| KR102059403B1 (ko) * | 2016-10-04 | 2019-12-26 | 삼성전자주식회사 | 팬-아웃 반도체 패키지 |
| KR102016491B1 (ko) | 2016-10-10 | 2019-09-02 | 삼성전기주식회사 | 팬-아웃 반도체 패키지 |
| KR101999608B1 (ko) | 2016-11-23 | 2019-07-18 | 삼성전자주식회사 | 팬-아웃 반도체 패키지 |
| KR101982049B1 (ko) * | 2016-11-23 | 2019-05-24 | 삼성전기주식회사 | 팬-아웃 반도체 패키지 |
| KR102041661B1 (ko) * | 2016-12-06 | 2019-11-07 | 삼성전기주식회사 | 팬-아웃 반도체 패키지 |
| KR101963282B1 (ko) * | 2016-12-16 | 2019-03-28 | 삼성전기주식회사 | 팬-아웃 반도체 패키지 |
| KR102009905B1 (ko) | 2017-02-21 | 2019-08-12 | 삼성전자주식회사 | 팬-아웃 반도체 패키지 |
| CN110651359A (zh) * | 2017-05-25 | 2020-01-03 | 株式会社新川 | 结构体的制造方法及结构体 |
| KR20190013051A (ko) * | 2017-07-31 | 2019-02-11 | 삼성전기주식회사 | 팬-아웃 반도체 패키지 |
| US10541209B2 (en) * | 2017-08-03 | 2020-01-21 | General Electric Company | Electronics package including integrated electromagnetic interference shield and method of manufacturing thereof |
| KR102380821B1 (ko) * | 2017-09-15 | 2022-03-31 | 삼성전자주식회사 | 팬-아웃 반도체 패키지 |
| KR101922884B1 (ko) * | 2017-10-26 | 2018-11-28 | 삼성전기 주식회사 | 팬-아웃 반도체 패키지 |
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| US10368448B2 (en) | 2017-11-11 | 2019-07-30 | At&S Austria Technologie & Systemtechnik Aktiengesellschaft | Method of manufacturing a component carrier |
| JPWO2019098043A1 (ja) * | 2017-11-16 | 2020-11-19 | 三菱瓦斯化学株式会社 | パターニングされた金属箔付き積層体の製造方法及びパターニングされた金属箔付き積層体 |
| KR101982061B1 (ko) * | 2017-12-19 | 2019-05-24 | 삼성전기주식회사 | 반도체 패키지 |
| JP7202785B2 (ja) * | 2018-04-27 | 2023-01-12 | 新光電気工業株式会社 | 配線基板及び配線基板の製造方法 |
| KR102086361B1 (ko) | 2018-06-04 | 2020-03-09 | 삼성전자주식회사 | 반도체 패키지 |
| KR102854180B1 (ko) * | 2020-07-27 | 2025-09-03 | 삼성전기주식회사 | 전자부품 내장기판 |
| US11978695B2 (en) | 2021-04-19 | 2024-05-07 | Samsung Electronics Co., Ltd. | Semiconductor package and method of fabricating the same |
| KR20230023388A (ko) * | 2021-08-10 | 2023-02-17 | 삼성전자주식회사 | 팬아웃 반도체 패키지 |
| WO2024029138A1 (ja) * | 2022-08-01 | 2024-02-08 | 株式会社村田製作所 | 複合部品デバイスおよびその製造方法 |
| KR20240067514A (ko) | 2022-11-09 | 2024-05-17 | 삼성전자주식회사 | 반도체 패키지 |
| JPWO2024195468A1 (https=) * | 2023-03-20 | 2024-09-26 | ||
| KR102737071B1 (ko) * | 2024-01-02 | 2024-12-03 | 엘지이노텍 주식회사 | 회로기판 및 이를 포함하는 반도체 패키지 기판 |
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-
2011
- 2011-06-22 JP JP2011138553A patent/JP5826532B2/ja active Active
- 2011-07-13 US US13/181,884 patent/US8482117B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2012039090A (ja) | 2012-02-23 |
| US8482117B2 (en) | 2013-07-09 |
| US20120013021A1 (en) | 2012-01-19 |
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