CN110651359A - 结构体的制造方法及结构体 - Google Patents

结构体的制造方法及结构体 Download PDF

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Publication number
CN110651359A
CN110651359A CN201880033360.8A CN201880033360A CN110651359A CN 110651359 A CN110651359 A CN 110651359A CN 201880033360 A CN201880033360 A CN 201880033360A CN 110651359 A CN110651359 A CN 110651359A
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China
Prior art keywords
liquid resin
metal thin
thin film
members
manufacturing
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CN201880033360.8A
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Inventor
永口悠二
瀬山耕平
中村智宣
菊池広
岛津武仁
鱼本幸
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National University Legal Person Northeast University
Tohoku University NUC
Shinkawa Ltd
Arakawa Co Ltd
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National University Legal Person Northeast University
Arakawa Co Ltd
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Publication of CN110651359A publication Critical patent/CN110651359A/zh
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Abstract

本发明为一种将基体(10、20)进行原子扩散接合的结构体(1)的制造方法，其包括：在基体(10)的表面涂布液状树脂(11a)的步骤；通过液状树脂(11a)的表面张力，使液状树脂(11a)的表面平滑化的步骤；将液状树脂(11a)硬化而形成树脂层(11)的步骤；在树脂层(11)的表面形成金属薄膜(12)的步骤；在基体(20)的表面形成金属薄膜(21)的步骤；以及将基体(10)的金属薄膜(12)与基体(20)的金属薄膜(21)密接而进行原子扩散接合的步骤。由此，即便是构件的薄膜形成面不平滑的情况，也可通过原子扩散接合来进行接合。

Description

结构体的制造方法及结构体
技术领域
本发明涉及一种结构体的制造方法及结构体，特别涉及一种利用原子扩散接合方法来制造的结构体的制造方法及结构体。
背景技术
将多个构件接合来制造结构体。例如，将半导体元件与基板接合(层叠)来制造半导体装置。在专利文献1中记载有如下的接合方法：以覆盖基板的表面的电极的方式，在基板的表面形成树脂层，一边使树脂层熔融一边在基板的电极上接合半导体元件。通过所述制造方法，可抑制在基板的电极与半导体元件之间进入异物。
另外，近年来，除了所述接合方法以外，已知通过原子扩散接合的构件的接合方法。原子扩散接合方法是通过在相向的一对的构件的各相向面上分别形成金属薄膜，使所述金属薄膜相互密接而产生原子扩散，从而将构件间进行接合的接合方法。所述原子扩散接合方法可进行常温接合，故而可不对构件进行加热而接合，也可应用于热膨胀系数不同的不同种材料的构件的接合。另外，由于以原子水平来接合，故而不需要粘接剂，强度、可靠性、耐久性优异。
现有技术文献
专利文献
专利文献1：日本专利特开2013-168503号公报
发明内容
发明所要解决的问题
原子扩散接合方法是经由形成于构件的表面的金属薄膜而将构件间接合，故而必须使金属薄膜相互密接。即，形成金属薄膜的薄膜形成面必须平滑。
因此，在构件的薄膜形成面不平滑的情况下，例如在构件的薄膜形成面为粗糙面的情况下，为了使构件的薄膜形成面变得平滑，而需要对构件的表面(薄膜形成面)进行研磨的研磨处理等，所述研磨处理繁琐且也产生成本。进而，若在将构件接合的金属薄膜之间存在异物，则构件的金属薄膜的密接变得困难，因此通过原子扩散接合的接合也变得困难。
因此，本发明中目的在于，即便是构件的薄膜形成面不平滑的情况，也通过原子扩散接合来进行接合。另外，目的在于，即便是在构件的金属薄膜之间存在异物的情况，也通过原子扩散接合来进行接合。
解决问题的技术手段
本发明的结构体的制造方法是将多个构件进行原子扩散接合的结构体的制造方法，其特征在于包括：在至少一个构件的表面涂布液状树脂的步骤；通过所涂布的液状树脂的表面张力，使液状树脂的表面平滑化的步骤；将液状树脂硬化而形成树脂层的步骤；在树脂层的表面形成金属薄膜的步骤；在其他构件的表面形成金属薄膜的步骤；以及将至少一个构件的金属薄膜与其他构件的金属薄膜密接而进行原子扩散接合的步骤。
另外，本发明的结构体的制造方法是将多个构件进行原子扩散接合的结构体的制造方法，其特征在于包括：在多个构件的表面分别涂布液状树脂的步骤；通过所涂布的液状树脂的表面张力，使液状树脂的表面平滑化的步骤；将液状树脂硬化而形成树脂层的步骤；在树脂层的表面形成金属薄膜的步骤；以及将多个构件的金属薄膜相互密接而进行原子扩散接合的步骤。
另外，在本发明的结构体的制造方法中，树脂层可设为具有弹性，构件可设为半导体。
另外，在本发明的结构体的制造方法中，至少一个半导体具有从表面突出既定高度的多个电极，并且将液状树脂涂布于多个电极之间，通过液状树脂的表面张力，使液状树脂的表面平滑化，并且可将多个电极的前端面与液状树脂的表面设为同一面。
另外，在本发明的结构体的制造方法中，构件为形成有半导体的半导体芯片，并且液状树脂涂布于半导体芯片的表面或半导体芯片的背面或者所述两面上，所涂布的液状树脂是以其表面粗糙度与其他构件的表面粗糙度相比变小的方式而平滑化。
另外，本发明的结构体是在多个构件的各表面分别形成金属薄膜，且经由金属薄膜而将构件进行原子扩散接合的结构体，其特征在于包括：树脂层，设置于至少一个构件与金属薄膜之间，且表面平滑化。另外，特征在于树脂层具有弹性。
另外，本发明的结构体中也可设为：至少一个构件为半导体芯片，并且树脂层的表面粗糙度小于所接合的对方的构件的表面粗糙度。
发明的效果
依据本发明，即便是构件的薄膜形成面不平滑的情况，也可利用简易的方法来获得平滑的薄膜形成面，可通过原子扩散接合来进行接合。另外，即便是在构件的金属薄膜之间存在异物的情况，也可通过原子扩散接合来进行接合。
附图说明
图1是第一实施方式的结构体的概略构成图。
图2是第一实施方式的结构体的制造步骤图。
图3A是表示基板表面为粗糙面的情况下的现有结构体的示意图。
图3B是表示基板表面为粗糙面的情况下的第一实施方式的结构体的示意图。
图4是第二实施方式的结构体的示意图。
图5是第二实施方式的结构体的制造步骤图。
图6A是表示在金属薄膜间进入有异物的情况下的现有结构体的示意图。
图6B是表示在金属薄膜间进入有异物的情况下的第二实施方式的结构体的示意图。
图7是表示第二实施方式的结构体的变形例的概略构成图。
图8是第三实施方式的结构体的概略构成图。
具体实施方式
首先，参照图1～图3，对第一实施方式进行说明。如图1所示，第一实施方式的结构体1是利用原子扩散接合方法，将作为一对的构件的基体10、基体20相互接合而构成。此外，此处，对具备一对的基体10、基体20的结构体1进行说明，但基体也可为多个。
结构体1具备：其中一侧的基体10；树脂层11，设置于基体10的接合侧面；金属薄膜12，设置于树脂层11的表面；另一侧的基体20；以及金属薄膜21，设置于基体20的接合侧面。基体20是将基体10接合的对方的构件。
基体10的接合侧面为粗糙面。作为基体10、基体20的材质，除了各种金属、合金以外，可使用Si基板等半导体、玻璃、陶瓷、树脂等。另外，基体10、基体20并不限定为如金属彼此的接合那样同一材质间的接合，例如也可如金属与陶瓷的接合、或芯片集成电路(integrated circuit，IC)与Si基板的接合那样，进行不同种材质间的接合。基体10、基体20的形状并无特别限定，例如可使用平板状的基体或复杂的立体形状的基体。基体10也可为例如形成有半导体的半导体芯片。另外，基体20也可为形成有半导体的Si基板(硅基板)或者半导体芯片。
树脂层11是以既定的厚度形成于基体10的接合侧面。树脂层11是通过利用旋涂法，将液状树脂涂布于基体10的接合侧面，进行硬化而形成。作为树脂层11的特性，必须选择与金属薄膜12的接合相容性良好的材质的树脂，例如可使用：硅酮树脂、氟树脂、聚酰亚胺树脂、丙烯酸树脂、或者环氧树脂等。
金属薄膜12是利用通过溅镀的成膜方法，以数nm～数百nm的膜厚形成于树脂层11的表面。另外，金属薄膜21也利用同样的成膜方法，以数nm～10nm的膜厚形成于基体20的表面。此外，除了溅镀以外，也可使用通过物理气相沉积(physical vapor deposition，PVD)、化学气相沉积(chemical vapor deposition，CVD)、真空蒸镀的成膜方法。另外，金属薄膜12、金属薄膜21的材料例如可使用Au、Ag等金属。
继而，参照图2，对结构体1的制造进行说明。首先，在图2中的步骤S1中准备基体10。基体10的接合侧面成为粗糙面。在此种粗糙面的情况下，为了使所述粗糙面成为平滑面而必须进行研磨处理，但在第一实施方式中不进行研磨处理，而是以所述粗糙面的状态来使用。
在步骤S2中，在基体10的粗糙面上涂布液状树脂11a。所涂布的液状树脂11a不仅掩埋粗糙面，而且通过液状树脂11a的表面张力而使液状树脂11a的表面平滑化。即，在刚涂布后，表面张力作用于液状树脂11a，液状树脂11a的表面变得平滑。确认液状树脂11a的表面平滑化后，对基体10及液状树脂11a进行加热，将液状树脂11a硬化而形成树脂层11。
在步骤S3中，将形成有树脂层11的基体10配置于真空容器内，通过溅镀而在树脂层11的表面形成金属薄膜12。
另一方面，在步骤S4中准备基体20，在步骤S5中将基体20配置于真空容器内，通过溅镀而在基体20的表面形成金属薄膜21。此外，基体20的表面并非如基体10的表面那样的粗糙面，不需要表面的平滑化，因此并非如基体10那样涂布液状树脂。
接着，在步骤S6中，从真空容器中，将基体10以及基体20分别取出，将基体10上下反转而使金属薄膜12的面朝向下方，将所述金属薄膜12重叠于基体20的金属薄膜21上。在所述重叠的状态下，对基体10赋予负重，使基体10的金属薄膜12与基体20的金属薄膜21密接。通过所述密接状态，金属薄膜12、金属薄膜21通过原子扩散而相互接合。通过原子扩散接合，金属薄膜12、金属薄膜21通过以原子水平进行金属结合或分子间结合而牢固地接合。通过金属薄膜12、金属薄膜21牢固地接合而构成结构体1。
另外，若将基体10的表面Ra(算术平均粗糙度)、与树脂层11的表面Ra进行比较，则树脂层11的表面Ra小于基体10的表面Ra。即，树脂层11的表面由于经平滑化，故而其表面Ra小，基体10的表面由于是粗糙面，故而其表面Ra大。因此，形成树脂层11的表面Ra＜基体10的表面Ra的关系。另外，通过平滑化，树脂层11的表面Ra变得小于表面平滑而不需要表面的平滑化的基体20的表面Ra。
参照图3A、图3B，对由结构体1带来的效果进行说明。图3A、图3B是将接合侧面为粗糙面的基体通过原子扩散而接合的情况的示意图。图3A表示现有的结构体100的情况，图3B表示第一实施方式的结构体1的情况。
在图3A中，对现有的结构体100的构成进行简单说明。结构体100具备：基体110，其接合面为粗糙面；金属薄膜111，形成于基体110的粗糙面上；基体120；以及金属薄膜121，形成于基体120的表面。而且，通过将金属薄膜111、金属薄膜121重叠来进行原子扩散接合而构成结构体100。
结构体100中，基体110的粗糙面由于平滑性低，故而形成于所述粗糙面上的金属薄膜111的表面的平滑性也降低。因此，难以使金属薄膜111、金属薄膜121密接，也难以通过原子扩散而将金属薄膜111、金属薄膜121接合。其结果为接合不良。
与此相对，如图3B所示，结构体1中，由于将基体10的粗糙面以树脂层11来掩埋，且所述树脂层11的表面为平滑面，故而金属薄膜12的表面也为平滑面。因此，可使金属薄膜12、金属薄膜21密接，并可通过原子扩散而将金属薄膜12、金属薄膜21接合。
如上所述，不需要用以使基体10的粗糙面成为平滑面的研磨处理，可省去研磨处理的作业，从而可抑制成本。另外，即便基体10为粗糙面，也可通过原子扩散来进行接合，而可扩大通过原子扩散的接合构件的应用范围。
此外，在基体20的形成金属薄膜21的面为粗糙面的情况下，也可在基体20与金属薄膜21之间形成树脂层11。在所述情况下，图2中，在步骤S4与步骤S5之间进行与步骤S2同样的步骤。
接着，参照图4～图6，对第二实施方式进行说明。在第二实施方式中，结构体2的基体30的接合侧面为平滑面，树脂层31的特性与树脂层11的特性不同。其他的构成与第一实施方式的结构体1相同。因此，在图4中，对与图1相同的构成标注相同符号，并省略其说明。
树脂层31是以既定的厚度形成于基体30的接合侧面(平滑面)。树脂层31是通过利用旋涂法，将液状的树脂涂布于基体30的接合侧面，进行硬化而形成。作为树脂层31的特性，必须选择与金属薄膜12的接合相容性良好的材质的树脂，另外，必须选择硬化后具有弹性的材质。作为此种树脂可使用例如硅酮树脂、氟树脂、聚酰亚胺树脂、丙烯酸树脂、或者环氧树脂等。
参照图5，对结构体2的制造进行说明。在图5中的步骤S11中，准备基体30。
在步骤S12中，在基体30的接合侧面涂布液状树脂31a。液状树脂31a的材料是使用硬化后也具有弹性的树脂材料。所涂布的液状树脂31a通过液状树脂31a的表面张力而使液状树脂31a的表面变得平滑。确认液状树脂31a的表面平滑化后，将基体30及液状树脂31a进行加热，使液状树脂31a硬化而形成树脂层31。此外，树脂层31在硬化后也具有弹性。
在步骤S13中，将形成有树脂层31的基体30配置于真空容器内，通过溅镀而在树脂层31的表面形成金属薄膜12。
在步骤S14、步骤S15中，以与步骤S4、步骤S5相同的方式，在基体20上形成金属薄膜21。继而，在步骤S16中，将基体30上下反转而使金属薄膜12的面朝向下方，将所述金属薄膜12重叠于基体20的金属薄膜21上。在所述重叠的状态下，对基体30赋予负重，使基体30的金属薄膜12与基体20的金属薄膜21密接。通过所述密接状态，金属薄膜12、金属薄膜21通过原子扩散而相互接合。通过原子扩散接合，金属薄膜12、金属薄膜21通过以原子水平进行金属结合或分子间结合而牢固地接合。通过金属薄膜12、金属薄膜21牢固地接合而构成结构体2。
参照图6A、图6B，对由结构体2带来的效果进行说明。图6A、图6B是对在金属薄膜间进入有异物D的情况进行说明的示意图。图6A表示现有的结构体200的情况，图6B表示第二实施方式的结构体2的情况。
在图6A中，现有的结构体200具备：基体210；金属薄膜211，形成于基体210的表面；基体220；以及金属薄膜221，形成于基体220的表面。而且，通过将金属薄膜211、金属薄膜221重叠，进行原子扩散接合而构成结构体200。
在结构体200中，当将金属薄膜211、金属薄膜221重叠时，若在金属薄膜211、金属薄膜221之间进入异物D，则异物D成为障碍，变得难以将金属薄膜211、金属薄膜221重叠，从而难以使金属薄膜211、金属薄膜221密接。因此，也难以通过原子扩散而将金属薄膜211、金属薄膜221接合，其结果为接合不良。
与此相对，如图6B所示，在第二实施方式的结构体2中，若于在金属薄膜12、金属薄膜21之间进入有异物D的状态下，将金属薄膜12、金属薄膜21重叠，则树脂层31根据异物D的形状而进行弹性变形。而且，在包入有异物D的状态下，金属薄膜12、金属薄膜21相互密接。即，在异物D以外的金属薄膜12、金属薄膜21的部分，金属薄膜12、金属薄膜21相互密接。
异物D以外的金属薄膜12、金属薄膜21的部分由于具有充分的重叠面积，故而可通过原子扩散而将金属薄膜12、金属薄膜21接合，即便异物D进入，也可获得结构体2。
另外，即便金属薄膜12、金属薄膜21的表面的平滑性低，也通过树脂层31进行弹性变形，而使金属薄膜12、金属薄膜21相互密接，因此可通过原子扩散而将金属薄膜12、金属薄膜21接合。
继而，参照图7，对第二实施方式的变形例进行说明。如图7所示，在表示第二实施方式的变形例的结构体3中，树脂层22也形成于基体20侧。即，在基体20的接合侧面形成有树脂层22。树脂层22的材质是使用与树脂层31同样地在硬化后具有弹性的材料。
如上所述，通过在基体30、基体20的两者上形成树脂层31、树脂层22，则于在金属薄膜12、金属薄膜21之间进入有异物D的情况下，树脂层31、树脂层22根据异物D的形状而进行弹性变形，因此与第二实施方式同样，在包入有异物D的状态下，金属薄膜12、金属薄膜21相互密接，可通过原子扩散接合方法而将金属薄膜12、金属薄膜21接合。
另外，通过树脂层31、树脂层22，弹性变形量增加，因此也可应对更大的异物D，另外，可提高金属薄膜12、金属薄膜21的对相互的面的追随性，而可提高金属薄膜12、金属薄膜21的密接性。
接着，参照图8，对第三实施方式进行说明。在第三实施方式中，结构体为半导体装置4。如图8所示，半导体装置4具备：基板40；芯片零件50；树脂层52，设置于芯片零件50的电极51之间；以及金属薄膜42、金属薄膜53，将基板40与芯片零件50连接。芯片零件50例如为形成有半导体的半导体芯片。
基板40为Si基板(硅基板)。在基板40埋设有多个电极41。在芯片零件50的下表面，设置有从所述下表面突出既定高度的多个电极51。多个电极51是以与设置于基板40上的电极41分别对应的方式来配置。
在电极51之间，涂布与第一实施方式中的液状树脂11a同样的液状树脂，电极51的前端面与液状树脂的表面成为同一面。在芯片零件50的电极51之间涂布液状树脂，通过所述液状树脂的表面张力，液状树脂的表面变得平滑。而且，所述平滑面与电极51的前端面成为同一面。通过在所述状态下将液状树脂硬化而形成树脂层52。
在芯片零件50的电极51的前端面以及树脂层52的表面，形成有与第一实施方式中的金属薄膜12同样的金属薄膜53。另外，在基板40的表面，也形成有与第一实施方式中的金属薄膜12同样的金属薄膜42。而且，使芯片零件50的电极51与基板40的电极41相向，通过原子扩散而将金属薄膜42、金属薄膜53接合，由此，芯片零件50与基板40接合而构成半导体装置4。
如上所述，通过在芯片零件50的电极51之间形成树脂层52，可扩大形成金属薄膜53的面积，而可使芯片零件50与基板40更牢固地进行原子扩散接合。
以上所说明的各实施方式已作为通过原子扩散接合而将2个基体接合的情况来进行了说明，但并不限定于此，例如，也可在半导体芯片的表面与背面涂布液状树脂，使其硬化而在两面形成树脂层，在其上层叠多层的形成有金属薄膜的中间芯片零件，且在其两端，在半导体芯片的表面或者背面涂布液状树脂，使其硬化而在其中一面形成树脂层，在其上层叠形成有金属薄膜的端部芯片零件来进行原子扩散接合，从而形成层叠有多层的半导体芯片的结构体。
符号的说明
1、2、3：结构体
4：半导体装置
10、20、30、40：基体
11、22、31、52：树脂层
11a、31a：液状树脂
12、21、42、53：金属薄膜
41、51：电极
50：芯片零件

Claims (21)

1.一种结构体的制造方法，将多个构件进行接合，其特征在于，包括：
在至少一个所述构件的表面涂布液状树脂的步骤；
通过所涂布的所述液状树脂的表面张力，使所述液状树脂的表面平滑化的步骤；
将所述液状树脂硬化而形成树脂层的步骤；
在所述树脂层的表面形成金属薄膜的步骤；
在其他的所述构件的表面形成所述金属薄膜的步骤；以及
将至少一个所述构件的所述金属薄膜与其他的所述构件的所述金属薄膜密接而进行接合的步骤。
2.根据权利要求1所述的结构体的制造方法，其特征在于，所述树脂层具有弹性。
3.根据权利要求1所述的结构体的制造方法，其特征在于，所述构件为半导体。
4.根据权利要求2所述的结构体的制造方法，其特征在于，所述构件为半导体。
5.根据权利要求3所述的结构体的制造方法，其特征在于，至少一个所述半导体具有从表面突出既定高度的多个电极，并且
将所述液状树脂涂布于多个所述电极之间，通过所述液状树脂的表面张力，使所述液状树脂的表面平滑化，并且将多个所述电极的前端面与所述液状树脂的表面设为同一面。
6.根据权利要求4所述的结构体的制造方法，其特征在于，至少一个所述半导体具有从表面突出既定高度的多个电极，并且
将所述液状树脂涂布于多个所述电极之间，通过所述液状树脂的表面张力，使所述液状树脂的表面平滑化，并且将多个所述电极的前端面与所述液状树脂的表面设为同一面。
7.根据权利要求1至6中任一项所述的结构体的制造方法，其特征在于，至少一个所述构件的所述金属薄膜通过原子扩散接合而与其他的所述构件的所述金属薄膜接合。
8.根据权利要求3所述的结构体的制造方法，其特征在于，所述构件为形成有半导体的半导体芯片，
所述液状树脂涂布于所述半导体芯片的表面或所述半导体芯片的背面或者所述两面上，并且
所涂布的所述液状树脂是以其表面粗糙度与其他的所述构件的表面粗糙度相比变小的方式而平滑化。
9.根据权利要求4所述的结构体的制造方法，其特征在于，所述构件为形成有半导体的半导体芯片，
所述液状树脂涂布于所述半导体芯片的表面或所述半导体芯片的背面或者所述两面上，并且
所涂布的所述液状树脂是以其表面粗糙度与其他的所述构件的表面粗糙度相比变小的方式而平滑化。
10.一种结构体的制造方法，将多个构件接合，其特征在于，包括：
在多个所述构件的表面分别涂布液状树脂的步骤；
通过所涂布的所述液状树脂的表面张力，使所述液状树脂的表面平滑化的步骤；
将所述液状树脂硬化而形成树脂层的步骤；
在所述树脂层的表面形成金属薄膜的步骤；以及
将多个所述构件的所述金属薄膜相互密接而进行接合的步骤。
11.根据权利要求10所述的结构体的制造方法，其特征在于，所述树脂层具有弹性。
12.根据权利要求10所述的结构体的制造方法，其特征在于，所述构件为半导体。
13.根据权利要求11所述的结构体的制造方法，其特征在于，所述构件为半导体。
14.根据权利要求12所述的结构体的制造方法，其特征在于，至少一个所述半导体具有从表面突出既定高度的多个电极，并且
将所述液状树脂涂布于多个所述电极之间，通过所述液状树脂的表面张力，使所述液状树脂的表面平滑化，并且将多个所述电极的前端面与所述液状树脂的表面设为同一面。
15.根据权利要求13所述的结构体的制造方法，其特征在于，至少一个所述半导体具有从表面突出既定高度的多个电极，并且
将所述液状树脂涂布于多个所述电极之间，通过所述液状树脂的表面张力，使所述液状树脂的表面平滑化，并且将多个所述电极的前端面与所述液状树脂的表面设为同一面。
16.根据权利要求10至15中任一项所述的结构体的制造方法，其特征在于，至少一个所述构件的所述金属薄膜通过原子扩散接合而与其他的所述构件的所述金属薄膜接合。
17.根据权利要求12所述的结构体的制造方法，其特征在于，所述构件为形成有半导体的半导体芯片，
所述液状树脂涂布于所述半导体芯片的表面或所述半导体芯片的背面或者所述两面上，并且
所涂布的所述液状树脂是以其表面粗糙度与其他的所述构件的表面粗糙度相比变小的方式而平滑化。
18.根据权利要求13所述的结构体的制造方法，其特征在于，所述构件为形成有半导体的半导体芯片，
所述液状树脂涂布于所述半导体芯片的表面或所述半导体芯片的背面或者所述两面上，并且
所涂布的所述液状树脂是以其表面粗糙度与其他的所述构件的表面粗糙度相比变小的方式而平滑化。
19.一种结构体，在多个构件的各表面分别形成金属薄膜，且经由所述金属薄膜而接合有所述构件，所述结构体的特征在于，包括：
树脂层，设置于至少一个所述构件与所述金属薄膜之间，且表面平滑化。
20.根据权利要求19所述的结构体，其特征在于，所述树脂层具有弹性。
21.根据权利要求19所述的结构体，其特征在于，至少一个所述构件为半导体芯片，并且
所述树脂层的表面粗糙度小于所接合的对方的所述构件的表面粗糙度。
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