JP6807585B2 - 構造体の製造方法及び構造体 - Google Patents

構造体の製造方法及び構造体 Download PDF

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JP6807585B2
JP6807585B2 JP2019520304A JP2019520304A JP6807585B2 JP 6807585 B2 JP6807585 B2 JP 6807585B2 JP 2019520304 A JP2019520304 A JP 2019520304A JP 2019520304 A JP2019520304 A JP 2019520304A JP 6807585 B2 JP6807585 B2 JP 6807585B2
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liquid resin
manufacturing
metal thin
thin film
members
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JPWO2018216763A1 (ja
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悠二 永口
悠二 永口
耕平 瀬山
耕平 瀬山
智宣 中村
智宣 中村
菊地　広
広 菊地
島津　武仁
武仁 島津
幸 魚本
幸 魚本
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Tohoku University NUC
Shinkawa Ltd
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Tohoku University NUC
Shinkawa Ltd
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Description

本発明は、構造体の製造方法及び構造体に関し、特に、原子拡散接合方法により製造された構造体の製造方法及び構造体に関する。
複数の部材を接合して構造体を製造することが行われている。例えば、半導体素子と基板とを接合（積層）して半導体装置を製造することが行われている。特許文献１には、基板の表面の電極を覆うように基板の表面に樹脂層を形成して、樹脂層を溶融させつつ基板の電極に半導体素子を接合する接合方法が記載されている。この製造方法によれば、基板の電極と半導体素子との間に異物が入り込むことを抑制することができる。
また、近年では、上記の接合方法の他に原子拡散接合による部材の接合方法が知られている。原子拡散接合方法は、対向する一対の部材の各対向面に金属薄膜をそれぞれ形成し、この金属薄膜を互いに密着して原子拡散を生じさせることにより部材間を接合する接合方法である。この原子拡散接合方法は、常温接合が可能であるので、部材を加熱せずに接合が可能であり、熱膨張率が異なる異種材料の部材の接合にも適用することができる。また、原子レベルで接合しているので、接着剤が不要であり、強度、信頼性、耐久性に優れている。
特開２０１３−１６８５０３号公報
原子拡散接合方法は、部材の表面に形成された金属薄膜を介して部材間を接合しているので、金属薄膜を互いに密着させる必要がある。すなわち、金属薄膜を形成する薄膜形成面が平滑である必要がある。
このため、部材の薄膜形成面が平滑ではない場合、例えば、部材の薄膜形成面が粗面である場合には、部材の薄膜形成面を平滑にするために、部材の表面（薄膜形成面）を研磨する研磨処理等が必要になり、この研磨処理が煩雑であり、またコストも発生する。さらに、部材を接合する金属薄膜の間に異物が存在すると、部材の金属薄膜の密着が困難になるので、原子拡散接合による接合も困難になる。
そこで、本発明では、部材の薄膜形成面が平滑ではない場合でも、原子拡散接合による接合を行うことを目的とする。また、部材の金属薄膜の間に異物が存在する場合でも、原子拡散接合による接合を行うことを目的とする。
本発明の構造体の製造方法は、複数の部材を原子拡散接合した構造体の製造方法であって、少なくとも一つの部材の表面に液状樹脂を塗布する工程と、塗布された液状樹脂の表面張力により、液状樹脂の表面を平滑化する工程と、液状樹脂を硬化して樹脂層を形成する工程と、樹脂層の表面に金属薄膜を形成する工程と、他の部材の表面に金属薄膜を形成する工程と、少なくとも一つの部材の金属薄膜と他の部材の金属薄膜とを密着して原子拡散接合する工程と、を含むことを特徴とする。
また、本発明の構造体の製造方法は、複数の部材を原子拡散接合した構造体の製造方法であって、複数の部材の表面に液状樹脂をそれぞれ塗布する工程と、塗布された液状樹脂の表面張力により、液状樹脂の表面を平滑化する工程と、液状樹脂を硬化して樹脂層を形成する工程と、樹脂層の表面に金属薄膜を形成する工程と、複数の部材の金属薄膜を互いに密着して原子拡散接合する工程と、を含むことを特徴とする。
また、本発明の構造体の製造方法において、樹脂層は弾性を有することとしてもよいし、部材は半導体としてもよい。
また、本発明の構造体の製造方法において、少なくとも一つの半導体は、表面から所定高さ突出した複数の電極を有し、液状樹脂を複数の電極の間に塗布して、液状樹脂の表面張力により、液状樹脂の表面を平滑化するとともに、複数の電極の先端面と液状樹脂の表面とを同一面としてもよい。
また、本発明の構造体の製造方法において、部材は、半導体を形成した半導体チップであり、液状樹脂は、半導体チップの表面または半導体チップの裏面またはその両方に塗布され、塗布された液状樹脂は、その表面粗さが他の部材の表面粗さに比べて小さくなるように平滑化されること、としてもよい。
また、本発明の構造体は、複数の部材の各表面に金属薄膜をそれぞれ形成して、金属薄膜を介して部材が原子拡散接合された構造体であって、少なくとも一つの部材と金属薄膜との間に設けられ、表面が平滑化された樹脂層を有することを特徴とする。また、樹脂層は弾性を有することを特徴とする。
また、本発明の構造体において、少なくとも一つの部材は半導体チップであり、樹脂層は、その表面粗さが接合される相手の部材の表面粗さより小さいこととしてもよい。
本発明によれば、部材の薄膜形成面が平滑ではない場合でも、簡易な方法で平滑な薄膜形成面を得ることができ、原子拡散接合による接合を行うことができる。また、部材の金属薄膜の間に異物が存在する場合でも、原子拡散接合による接合を行うことができる。
第１の実施形態の構造体の概略構成図である。 第１の実施形態の構造体の製造工程図である。 基板表面が粗面である場合の従来の構造体を示す模式図である。 基板表面が粗面である場合の第１の実施形態の構造体を示す模式図である。 第２の実施形態の構造体の模式図である。 第２の実施形態の構造体の製造工程図である。 金属薄膜間に異物が入り込んだ場合における従来の構造体を示す模式図である。 金属薄膜間に異物が入り込んだ場合における第２の実施形態の構造体を示す模式図である。 第２の実施形態の構造体の変形例を示す概略構成図である。 第３の実施形態の構造体の概略構成図である。
まず、第１の実施形態について、図１〜３を参照して説明する。図１に示すように、第１の実施形態における構造体１は、一対の部材としての基体１０，２０を原子拡散接合方法によって互いに接合して構成されている。なお、ここでは、一対の基体１０，２０を備える構造体１について説明するが、基体は複数であってもよい。
構造体１は、一方側の基体１０と、基体１０の接合側面に設けられた樹脂層１１と、樹脂層１１の表面に設けられた金属薄膜１２と、他方側の基体２０と、基体２０の接合側面に設けられた金属薄膜２１とを備えている。基体２０は、基体１０を接合する相手の部材である。
基体１０の接合側面は粗面である。基体１０，２０の材質としては、各種の金属、合金の他に、Ｓｉ基板等の半導体、ガラス、セラミックス、樹脂等を使用することができる。また、基体１０，２０は，金属同士の接合のように同一材質間の接合に限られず、例えば、金属とセラミックスとの接合や、チップＩＣとＳｉ基板との接合のように、異種材質間の接合を行うことも可能である。基体１０，２０の形状は特に限定されず、例えば、平板状のものや複雑な立体形状のものを使用することができる。基体１０は、例えば、半導体を形成した半導体チップでもよい。また、基体２０は、半導体を形成したＳｉ基板（シリコン基板）あるいは半導体チップでもよい。
樹脂層１１は、基体１０の接合側面に所定の厚さで形成されている。樹脂層１１は、液状樹脂を基体１０の接合側面にスピンコートにより塗布して硬化することによって形成されている。樹脂層１１の特性として金属薄膜１２との接合相性がよい材質の樹脂を選択する必要があり、例えば、シリコーン樹脂、フッ素樹脂、ポリイミド樹脂、アクリル樹脂、または、エポキシ樹脂等を使用することができる。
金属薄膜１２は、スパッタリングによる成膜方法によって樹脂層１１の表面に数ｎｍ〜数百ｎｍの膜厚で形成されている。また、金属薄膜２１も同様の成膜方法により基体２０の表面に数ｎｍ〜１０ｎｍの膜厚で形成されている。なお、スパッタリングの他に、ＰＶＤ、ＣＶＤ、真空蒸着による成膜方法を用いてもよい。また、金属薄膜１２，２１の材料としては、例えば、Ａｕ、Ａｇ等の金属を使用することができる。
次に、構造体１の製造について図２を参照して説明する。まず、図２における工程Ｓ１において基体１０を準備する。基体１０の接合側面は粗面になっている。このような粗面である場合、この粗面を平滑面とするために研磨処理する必要があるが、第１の実施形態では研磨処理を行わず、この粗面の状態で使用する。
工程Ｓ２では、基体１０の粗面に液状樹脂１１ａを塗布する。塗布された液状樹脂１１ａは、粗面を埋めるとともに、液状樹脂１１ａの表面張力によって液状樹脂１１ａの表面を平滑化する。すなわち、塗布直後では、液状樹脂１１ａに表面張力が作用して、液状樹脂１１ａの表面が平滑になる。液状樹脂１１ａの表面が平滑化したことを確認した後に、基体１０及び液状樹脂１１ａを加熱して、液状樹脂１１ａを硬化して樹脂層１１を形成する。
工程Ｓ３では、樹脂層１１が形成された基体１０を真空容器内に配置し、樹脂層１１の表面にスパッタリングによって金属薄膜１２を形成する。
一方、工程Ｓ４において基体２０を準備して、工程Ｓ５において基体２０を真空容器内に配置し、基体２０の表面にスパッタリングによって金属薄膜２１を形成する。なお、基体２０の表面は基体１０の表面のような粗面ではなく表面の平滑化は必要ないので、基体１０のように液状樹脂の塗布は行わない。
そして、工程Ｓ６において、真空容器から基体１０及び基体２０をそれぞれ取り出して、基体１０を上下反転して金属薄膜１２の面を下方に向けて、この金属薄膜１２を基体２０の金属薄膜２１に重ね合わせる。この重ね合わせた状態において、基体１０に荷重を付与して、基体１０の金属薄膜１２と基体２０の金属薄膜２１とを密着させる。この密着状態により金属薄膜１２，２１は原子拡散によって互いに接合する。原子拡散接合によって、金属薄膜１２，２１は、原子レベルで金属結合あるいは分子間結合することにより強固に接合する。金属薄膜１２，２１が強固に接合することによって構造体１が構成される。
また、基体１０の表面Ｒａ（算術平均粗さ）と、樹脂層１１の表面Ｒａとを比較すると、樹脂層１１の表面Ｒａは基体１０の表面Ｒａよりも小さい。すなわち、樹脂層１１の表面は、平滑化されているのでその表面Ｒａは小さく、基体１０の表面は粗面であるので、その表面Ｒａは大きい。このため、樹脂層１１の表面Ｒａ＜基体１０の表面Ｒａの関係となっている。また、樹脂層１１の表面Ｒａは、平滑化によって、表面が平滑で表面の平滑化が不要な基体２０の表面Ｒａよりも小さくなっている。
図３Ａ，図３Ｂを参照して、構造体１による効果について説明する。図３Ａ，図３Ｂは、接合側面が粗面である基体を、原子拡散により接合する場合の模式図である。図３Ａは、従来の構造体１００の場合を示し、図３Ｂは、第１の実施形態の構造体１の場合を示している。
図３Ａにおいて、従来の構造体１００の構成について簡単に説明する。構造体１００は、接合面が粗面である基体１１０と、基体１１０の粗面に形成された金属薄膜１１１と、基体１２０と、基体１２０の表面に形成された金属薄膜１２１とを備えている。そして、金属薄膜１１１，１２１を重ね合わせて原子拡散接合することにより構造体１００を構成している。
構造体１００では、基体１１０の粗面は平滑性が低いので、この粗面に形成する金属薄膜１１１の表面の平滑性も低くなる。このため、金属薄膜１１１，１２１を密着させることが困難になり、金属薄膜１１１，１２１を原子拡散によって接合することも困難になる。その結果接合不良となる。
これに対して、図３Ｂに示すように、構造体１では、基体１０の粗面を樹脂層１１で埋めており、かつ、この樹脂層１１の表面は平滑面であるので、金属薄膜１２の表面も平滑面である。このため、金属薄膜１２，２１を密着させることができ、金属薄膜１２，２１を原子拡散によって接合することができる。
このように、基体１０の粗面を平滑面とするための研磨処理が不要になり、研磨処理の作業を省くことができ、コストを抑制することができる。また、基体１０が粗面であっても原子拡散による接合を行うことができ、原子拡散による接合部材の適用範囲を広げることができる。
なお、基体２０の金属薄膜２１を形成する面が粗面である場合、基体２０と金属薄膜２１との間に樹脂層１１を形成してもよい。この場合には、図２において、工程Ｓ４と工程Ｓ５との間に工程Ｓ２と同様の工程を行う。
次に、第２の実施形態について図４〜６を参照して説明する。第２の実施形態では、構造体２の基体３０の接合側面は平滑面であり、樹脂層３１の特性が樹脂層１１の特性と異なっている。その他の構成は、第１の実施形態の構造体１と同様である。このため、図４において、図１と同様の構成については同符号を付して、その説明を省略する。
樹脂層３１は、基体３０の接合側面（平滑面）に所定の厚さで形成されている。樹脂層３１は、液状の樹脂を基体３０の接合側面にスピンコートにより塗布して硬化することによって形成されている。樹脂層３１の特性として金属薄膜１２との接合相性がよい材質の樹脂を選択する必要があり、また、硬化後に弾性を有する材質を選択する必要がある。このような樹脂として、例えば、シリコーン樹脂、フッ素樹脂、ポリイミド樹脂、アクリル樹脂、またはエポキシ樹脂等を使用することができる。
構造体２の製造について図５を参照して説明する。図５における工程Ｓ１１において、基体３０を準備する。
工程Ｓ１２では、基体３０の接合側面に液状樹脂３１ａを塗布する。液状樹脂３１ａの材料としては硬化後も弾性を有する樹脂材料を使用する。塗布された液状樹脂３１ａは、液状樹脂３１ａの表面張力によって液状樹脂３１ａの表面が平滑になる。液状樹脂３１ａの表面が平滑化したことを確認した後に、基体３０及び液状樹脂３１ａを加熱して、液状樹脂３１ａを硬化して樹脂層３１を形成する。なお、樹脂層３１は、硬化後も弾性を有している。
工程Ｓ１３では、樹脂層３１が形成された基体３０を真空容器内に配置し、樹脂層３１の表面にスパッタリングによって金属薄膜１２を形成する。
工程Ｓ１４、Ｓ１５では、工程Ｓ４、Ｓ５と同様に基体２０に金属薄膜２１を形成する。続いて、工程Ｓ１６において、基体３０を上下反転して金属薄膜１２の面を下方に向けて、この金属薄膜１２を基体２０の金属薄膜２１に重ね合わせる。この重ね合わせた状態において、基体３０に荷重を付与して、基体３０の金属薄膜１２と基体２０の金属薄膜２１とを密着させる。この密着状態により金属薄膜１２，２１は原子拡散によって互いに接合する。原子拡散接合によって、金属薄膜１２，２１は、原子レベルで金属結合あるいは分子間結合することにより強固に接合する。金属薄膜１２，２１が強固に接合することによって構造体２が構成される。
図６Ａ，図６Ｂを参照して、構造体２による効果について説明する。図６Ａ，図６Ｂは、金属薄膜間に異物Ｄが入り込んだ場合を説明する模式図である。図６Ａは従来の構造体２００の場合を示し、図６Ｂは第２の実施形態の構造体２の場合を示している。
図６Ａにおいて、従来の構造体２００は、基体２１０と、基体２１０の表面に形成された金属薄膜２１１と、基体２２０と、基体２２０の表面に形成された金属薄膜２２１とを備えている。そして、金属薄膜２１１，２２１を重ね合わせて原子拡散接合することにより構造体２００を構成している。
構造体２００において、金属薄膜２１１，２２１を重ね合わせる際に、金属薄膜２１１，２２１の間に異物Ｄが入り込むと、異物Ｄが障害となって金属薄膜２１１，２２１を重ね合わせることが困難になり、金属薄膜２１１，２２１を密着させることが困難になる。このため、金属薄膜２１１，２２１を原子拡散によって接合することも困難になり、その結果接合不良となる。
これに対して、図６Ｂに示すように、第２の実施形態の構造体２では、金属薄膜１２，２１の間に異物Ｄが入り込んだ状態で、金属薄膜１２，２１を重ね合わせると異物Ｄの形状に応じて樹脂層３１が弾性変形する。そして、異物Ｄを包み込んだ状態で、金属薄膜１２，２１が互いに密着する。すなわち、異物Ｄ以外の金属薄膜１２，２１の部分で、金属薄膜１２，２１は互いに密着する。
異物Ｄ以外の金属薄膜１２，２１の部分は、十分な重ね合わせ面積を有しているので、金属薄膜１２，２１を原子拡散によって接合することができ、異物Ｄが入り込んでも、構造体２を得ることができる。
また、金属薄膜１２，２１の表面の平滑性が低くても樹脂層３１が弾性変形することにより、金属薄膜１２，２１が互いに密着するので、金属薄膜１２，２１を原子拡散によって接合することができる。
次に、第２の実施形態の変形例について図７を参照して説明する。図７に示すように、第２の実施形態の変形例を示す構造体３では、樹脂層２２が基体２０側にも形成されている。すなわち、基体２０の接合側面に樹脂層２２が形成されている。樹脂層２２の材質としては、樹脂層３１と同様に硬化後に弾性を有する材料を使用する。
このように、基体３０，２０の両方に樹脂層３１，２２を形成することによって、金属薄膜１２，２１の間に異物Ｄが入り込んだ場合、異物Ｄの形状に応じて樹脂層３１、２２が弾性変形するので、第２の実施形態と同様に、異物Ｄを包み込んだ状態で、金属薄膜１２，２１が互いに密着して、金属薄膜１２，２１を原子拡散接合方法によって接合することができる。
また、樹脂層３１，２２により弾性変形量が増加するので、より大きな異物Ｄにも対応することができ、また、金属薄膜１２，２１の互いの面への追従性を向上でき、金属薄膜１２，２１の密着性を向上することができる。
次に、第３の実施形態について図８を参照して説明する。第３の実施形態では構造体が半導体装置４である。図８に示すように、半導体装置４は、基板４０と、チップ部品５０と、チップ部品５０の電極５１の間に設けられる樹脂層５２と、基板４０とチップ部品５０とを接続する金属薄膜４２，５３とを備えている。チップ部品５０は、例えば、半導体を形成した半導体チップである。
基板４０は、Ｓｉ基板（シリコン基板）である。基板４０には複数の電極４１が埋設されている。チップ部品５０の下面には、この下面から所定高さ突出する複数の電極５１が設けられている。複数の電極５１は、基板４０に設けられた電極４１にそれぞれ対応するように配置されている。
電極５１の間には、第１の実施形態における液状樹脂１１ａと同様の液状樹脂が塗布されており、電極５１の先端面と液状樹脂の表面とが同一面となっている。チップ部品５０の電極５１の間に液状樹脂を塗布して、この液状樹脂の表面張力によって、液状樹脂の表面が平滑となる。そして、この平滑面は、電極５１の先端面と同一面となる。この状態で液状樹脂を硬化することによって樹脂層５２が形成される。
チップ部品５０の電極５１の先端面及び樹脂層５２の表面には、第１の実施形態における金属薄膜１２と同様の金属薄膜５３が形成されている。また、基板４０の表面にも、第１の実施形態における金属薄膜１２と同様の金属薄膜４２が形成されている。そして、チップ部品５０の電極５１と基板４０の電極４１とを対向させて、金属薄膜４２，５３を原子拡散によって接合することにより、チップ部品５０と基板４０とが接合されて半導体装置４が構成される。
このように、チップ部品５０の電極５１の間に樹脂層５２を形成することによって、金属薄膜５３を形成する面積を拡大することができ、チップ部品５０と基板４０とをより強固に原子拡散接合することができる。
以上説明した各実施形態は、２つの基体を原子拡散接合によって接合することとして説明したが、これに限らず、例えば、半導体チップの表面と裏面とに液状樹脂を塗布、硬化させて両面に樹脂層を形成し、その上に金属薄膜を形成した中間チップ部品を複数段に積層し、その両端に半導体チップの表面または裏面に液状樹脂を塗布、硬化させて一方の面に樹脂層を形成し、その上に金属薄膜を形成した端部チップ部品を積層して原子拡散接合を行い、半導体チップを複数段に積層した構造体としてもよい。
１，２，３ 構造体、４ 半導体装置、１０，２０，３０，４０ 基体、１１，２２，３１，５２ 樹脂層、１１ａ，３１ａ 液状樹脂、１２，２１，４２，５３ 金属薄膜、４１，５１ 電極、５０ チップ部品。

Claims (21)

  1. 複数の部材を接合した構造体の製造方法であって、
    少なくとも一つの前記部材の表面に液状樹脂を塗布する工程と、
    塗布された前記液状樹脂の表面張力により、前記液状樹脂の表面を平滑化する工程と、
    前記液状樹脂を硬化して樹脂層を形成する工程と、
    前記樹脂層の表面に金属薄膜を形成する工程と、
    他の前記部材の表面に前記金属薄膜を形成する工程と、
    少なくとも一つの前記部材の前記金属薄膜と他の前記部材の前記金属薄膜とを密着して接合する工程と、
    を含むことを特徴とする構造体の製造方法。
  2. 請求項１に記載の構造体の製造方法であって、
    前記樹脂層は弾性を有することを特徴とする構造体の製造方法。
  3. 請求項１に記載の構造体の製造方法であって、
    前記部材は半導体であることを特徴とする構造体の製造方法。
  4. 請求項２に記載の構造体の製造方法であって、
    前記部材は半導体であることを特徴とする構造体の製造方法。
  5. 請求項３に記載の構造体の製造方法であって、
    少なくとも一つの前記半導体は、表面から所定高さ突出した複数の電極を有し、
    前記液状樹脂を複数の前記電極の間に塗布して、前記液状樹脂の表面張力により、前記液状樹脂の表面を平滑化するとともに、複数の前記電極の先端面と前記液状樹脂の表面とを同一面とすることを特徴とする構造体の製造方法。
  6. 請求項４に記載の構造体の製造方法であって、
    少なくとも一つの前記半導体は、表面から所定高さ突出した複数の電極を有し、
    前記液状樹脂を複数の前記電極の間に塗布して、前記液状樹脂の表面張力により、前記液状樹脂の表面を平滑化するとともに、複数の前記電極の先端面と前記液状樹脂の表面とを同一面とすることを特徴とする構造体の製造方法。
  7. 請求項１〜６のいずれか一項に記載の構造体の製造方法であって、
    少なくとも一つの前記部材の前記金属薄膜は、原子拡散接合により他の前記部材の前記金属薄膜と接合することを特徴とする構造体の製造方法。
  8. 請求項３に記載の構造体の製造方法であって、
    前記部材は、半導体を形成した半導体チップであり、
    前記液状樹脂は、前記半導体チップの表面または前記半導体チップの裏面またはその両方に塗布され、
    塗布された前記液状樹脂は、その表面粗さが他の前記部材の表面粗さに比べて小さくなるように平滑化されること、
    を特徴とする構造体の製造方法。
  9. 請求項４に記載の構造体の製造方法であって、
    前記部材は、半導体を形成した半導体チップであり、
    前記液状樹脂は、前記半導体チップの表面または前記半導体チップの裏面またはその両方に塗布され、
    塗布された前記液状樹脂は、その表面粗さが他の前記部材の表面粗さに比べて小さくなるように平滑化されること、
    を特徴とする構造体の製造方法。
  10. 複数の部材を接合した構造体の製造方法であって、
    複数の前記部材の表面に液状樹脂をそれぞれ塗布する工程と、
    塗布された前記液状樹脂の表面張力により、前記液状樹脂の表面を平滑化する工程と、
    前記液状樹脂を硬化して樹脂層を形成する工程と、
    前記樹脂層の表面に金属薄膜を形成する工程と、
    複数の前記部材の前記金属薄膜を互いに密着して接合する工程と、
    を含むことを特徴とする構造体の製造方法。
  11. 請求項１０に記載の構造体の製造方法であって、
    前記樹脂層は弾性を有することを特徴とする構造体の製造方法。
  12. 請求項１０に記載の構造体の製造方法であって、
    前記部材は半導体であることを特徴とする構造体の製造方法。
  13. 請求項１１に記載の構造体の製造方法であって、
    前記部材は半導体であることを特徴とする構造体の製造方法。
  14. 請求項１２に記載の構造体の製造方法であって、
    少なくとも一つの前記半導体は、表面から所定高さ突出した複数の電極を有し、
    前記液状樹脂を複数の前記電極の間に塗布して、前記液状樹脂の表面張力により、前記液状樹脂の表面を平滑化するとともに、複数の前記電極の先端面と前記液状樹脂の表面とを同一面とすることを特徴とする構造体の製造方法。
  15. 請求項１３に記載の構造体の製造方法であって、
    少なくとも一つの前記半導体は、表面から所定高さ突出した複数の電極を有し、
    前記液状樹脂を複数の前記電極の間に塗布して、前記液状樹脂の表面張力により、前記液状樹脂の表面を平滑化するとともに、複数の前記電極の先端面と前記液状樹脂の表面とを同一面とすることを特徴とする構造体の製造方法。
  16. 請求項１０〜１５のいずれか一項に記載の構造体の製造方法であって、
    少なくとも一つの前記部材の前記金属薄膜は、原子拡散接合により他の前記部材の前記金属薄膜と接合することを特徴とする構造体の製造方法。
  17. 請求項１２に記載の構造体の製造方法であって、
    前記部材は、半導体を形成した半導体チップであり、
    前記液状樹脂は、前記半導体チップの表面または前記半導体チップの裏面またはその両方に塗布され、
    塗布された前記液状樹脂は、その表面粗さが他の前記部材の表面粗さに比べて小さくなるように平滑化されること、
    を特徴とする構造体の製造方法。
  18. 請求項１３に記載の構造体の製造方法であって、
    前記部材は、半導体を形成した半導体チップであり、
    前記液状樹脂は、前記半導体チップの表面または前記半導体チップの裏面またはその両方に塗布され、
    塗布された前記液状樹脂は、その表面粗さが他の前記部材の表面粗さに比べて小さくなるように平滑化されること、
    を特徴とする構造体の製造方法。
  19. 複数の部材の各表面に金属薄膜をそれぞれ形成して、前記金属薄膜を介して前記部材が接合された構造体であって、
    少なくとも一つの前記部材と前記金属薄膜との間に設けられ、表面が平滑化された樹脂層を有することを特徴とする構造体。
  20. 請求項１９に記載の構造体であって、
    前記樹脂層は弾性を有することを特徴とする構造体。
  21. 請求項１９に記載の構造体であって、
    少なくとも一つの前記部材は半導体チップであり、
    前記樹脂層は、その表面粗さが接合される相手の前記部材の表面粗さより小さいことを特徴とする構造体。
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