TWI691407B - 結構體的製造方法及結構體 - Google Patents

結構體的製造方法及結構體 Download PDF

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TWI691407B
TWI691407B TW107117815A TW107117815A TWI691407B TW I691407 B TWI691407 B TW I691407B TW 107117815 A TW107117815 A TW 107117815A TW 107117815 A TW107117815 A TW 107117815A TW I691407 B TWI691407 B TW I691407B
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Taiwan
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liquid resin
thin film
metal thin
members
manufacturing
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TW107117815A
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TW201900403A (zh
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永口悠二
瀬山耕平
中村智宣
菊池広
島津武仁
魚本幸
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日商新川股份有限公司
國立大學法人東北大學
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Abstract

本發明為一種將基體(10、20)進行原子擴散接合的結構體(1)的製造方法，其包括：於基體(10)的表面塗佈液狀樹脂(11a)的步驟；藉由液狀樹脂(11a)的表面張力，使液狀樹脂(11a)的表面平滑化的步驟；將液狀樹脂(11a)硬化而形成樹脂層(11)的步驟；於樹脂層(11)的表面形成金屬薄膜(12)的步驟；於基體(20)的表面形成金屬薄膜(21)的步驟；以及將基體(10)的金屬薄膜(12)與基體(20)的金屬薄膜(21)密接而進行原子擴散接合的步驟。

Description

結構體的製造方法及結構體
本發明是有關於一種結構體的製造方法及結構體，特別是有關於一種利用原子擴散接合方法來製造的結構體的製造方法及結構體。
將多個構件接合來製造結構體。例如，將半導體元件與基板接合(積層)來製造半導體裝置。於專利文獻1中記載有如下的接合方法：以覆蓋基板的表面的電極的方式，於基板的表面形成樹脂層，一邊使樹脂層熔融一邊於基板的電極上接合半導體元件。藉由該製造方法，可抑制於基板的電極與半導體元件之間進入異物。
另外，近年來，除了上述接合方法以外，已知藉由原子擴散接合的構件的接合方法。原子擴散接合方法是藉由在對向的一對的構件的各對向面上分別形成金屬薄膜，使該金屬薄膜相互密接而產生原子擴散，從而將構件間進行接合的接合方法。該原子擴散接合方法可進行常溫接合，故而可不對構件進行加熱而接合，亦可應用於熱膨脹係數不同的不同種材料的構件的接合。另外，由於以原子水準來接合，故而不需要黏接劑，強度、可靠性、耐久性優異。
[現有技術文獻] [專利文獻]
[專利文獻1]日本專利特開2013-168503號公報
原子擴散接合方法是經由形成於構件的表面的金屬薄膜而將構件間接合，故而必須使金屬薄膜相互密接。即，形成金屬薄膜的薄膜形成面必須平滑。
因此，於構件的薄膜形成面不平滑的情況下，例如於構件的薄膜形成面為粗糙面的情況下，為了使構件的薄膜形成面變得平滑，而需要對構件的表面(薄膜形成面)進行研磨的研磨處理等，該研磨處理繁瑣且亦產生成本。進而，若於將構件接合的金屬薄膜之間存在異物，則構件的金屬薄膜的密接變得困難，因此藉由原子擴散接合的接合亦變得困難。
因此，本發明中目的在於，即便是構件的薄膜形成面不平滑的情況，亦藉由原子擴散接合來進行接合。另外，目的在於，即便是於構件的金屬薄膜之間存在異物的情況，亦藉由原子擴散接合來進行接合。
本發明的結構體的製造方法是將多個構件進行原子擴散接合的結構體的製造方法，其特徵在於包括：於至少一個構件的表面塗佈液狀樹脂的步驟；藉由所塗佈的液狀樹脂的表面張 力，使液狀樹脂的表面平滑化的步驟；將液狀樹脂硬化而形成樹脂層的步驟；於樹脂層的表面形成金屬薄膜的步驟；於其他構件的表面形成金屬薄膜的步驟；以及將至少一個構件的金屬薄膜與其他構件的金屬薄膜密接而進行原子擴散接合的步驟。
另外，本發明的結構體的製造方法是將多個構件進行原子擴散接合的結構體的製造方法，其特徵在於包括：於多個構件的表面分別塗佈液狀樹脂的步驟；藉由所塗佈的液狀樹脂的表面張力，使液狀樹脂的表面平滑化的步驟；將液狀樹脂硬化而形成樹脂層的步驟；於樹脂層的表面形成金屬薄膜的步驟；以及將多個構件的金屬薄膜相互密接而進行原子擴散接合的步驟。
另外，於本發明的結構體的製造方法中，樹脂層可設為具有彈性，構件可設為半導體。
另外，於本發明的結構體的製造方法中，至少一個半導體具有從表面突出既定高度的多個電極，並且將液狀樹脂塗佈於多個電極之間，藉由液狀樹脂的表面張力，使液狀樹脂的表面平滑化，並且可將多個電極的前端面與液狀樹脂的表面設為同一面。
另外，於本發明的結構體的製造方法中，構件為形成有半導體的半導體晶片，並且液狀樹脂塗佈於半導體晶片的表面或半導體晶片的背面或者該兩面上，所塗佈的液狀樹脂是以其表面粗糙度與其他構件的表面粗糙度相比變小的方式而平滑化。
另外，本發明的結構體是於多個構件的各表面分別形成金屬薄膜，且經由金屬薄膜而將構件進行原子擴散接合的結構 體，其特徵在於包括：樹脂層，設置於至少一個構件與金屬薄膜之間，且表面平滑化。另外，特徵在於樹脂層具有彈性。
另外，本發明的結構體中亦可設為：至少一個構件為半導體晶片，並且樹脂層的表面粗糙度小於所接合的對方的構件的表面粗糙度。
依據本發明，即便是構件的薄膜形成面不平滑的情況，亦可利用簡易的方法來獲得平滑的薄膜形成面，可藉由原子擴散接合來進行接合。另外，即便是於構件的金屬薄膜之間存在異物的情況，亦可藉由原子擴散接合來進行接合。
1、2、3、100、200:結構體
4:半導體裝置
10、20、30、40、110、120、210、220:基體
11、22、31、52:樹脂層
11a、31a:液狀樹脂
12、21、42、53、111、121、211、221:金屬薄膜
41、51:電極
50:晶片零件
D:異物
S1~S6、S11~S16:步驟
圖1是第1實施形態的結構體的概略構成圖。
圖2是第1實施形態的結構體的製造步驟圖。
圖3A是表示基板表面為粗糙面的情況下的現有結構體的示意圖。
圖3B是表示基板表面為粗糙面的情況下的第1實施形態的結構體的示意圖。
圖4是第2實施形態的結構體的示意圖。
圖5是第2實施形態的結構體的製造步驟圖。
圖6A是表示於金屬薄膜間進入有異物的情況下的現有結構體的示意圖。
圖6B是表示於金屬薄膜間進入有異物的情況下的第2實施形態的結構體的示意圖。
圖7是表示第2實施形態的結構體的變形例的概略構成圖。
圖8是第3實施形態的結構體的概略構成圖。
首先，參照圖1~圖3B，對第1實施形態進行說明。如圖1所述，第1實施形態中的結構體1是利用原子擴散接合方法，將作為一對的構件的基體10、基體20相互接合而構成。此外，此處，對具備一對的基體10、基體20的結構體1進行說明，但基體亦可為多個。
結構體1具備：其中一側的基體10；樹脂層11，設置於基體10的接合側面；金屬薄膜12，設置於樹脂層11的表面；另一側的基體20；以及金屬薄膜21，設置於基體20的接合側面。基體20是將基體10接合的對方的構件。
基體10的接合側面為粗糙面。作為基體10、基體20的材質，除了各種金屬、合金以外，可使用Si基板等半導體、玻璃、陶瓷、樹脂等。另外，基體10、基體20並不限定為如金屬彼此的接合般同一材質間的接合，例如亦可如金屬與陶瓷的接合、或晶片積體電路(integrated circuit，IC)與Si基板的接合般，進行不同種材質間的接合。基體10、基體20的形狀並無特別限定，例如可使用平板狀的基體或複雜的立體形狀的基體。基體10亦可為例如形成有半導體的半導體晶片。另外，基體20亦可為形成有 半導體的Si基板(矽基板)或者半導體晶片。
樹脂層11是以既定的厚度形成於基體10的接合側面。樹脂層11是藉由利用旋塗法，將液狀樹脂塗佈於基體10的接合側面上，進行硬化而形成。作為樹脂層11的特性，必須選擇與金屬薄膜12的接合相容性良好的材質的樹脂，例如可使用：矽酮樹脂、氟樹脂、聚醯亞胺樹脂、丙烯酸樹脂、或者環氧樹脂等。
金屬薄膜12是利用藉由濺鍍的成膜方法，以數nm~數百nm的膜厚形成於樹脂層11的表面。另外，金屬薄膜21亦利用同樣的成膜方法，以數nm~10nm的膜厚形成於基體20的表面。此外，除了濺鍍以外，亦可使用藉由物理氣相沈積(physical vapor deposition，PVD)、化學氣相沈積(chemical vapor deposition，CVD)、真空蒸鍍的成膜方法。另外，金屬薄膜12、金屬薄膜21的材料例如可使用Au、Ag等金屬。
繼而，參照圖2，對結構體1的製造進行說明。首先，於圖2中的步驟S1中準備基體10。基體10的接合側面成為粗糙面。於此種粗糙面的情況下，為了使該粗糙面成為平滑面而必須進行研磨處理，但於第1實施形態中不進行研磨處理，而是以該粗糙面的狀態來使用。
於步驟S2中，於基體10的粗糙面上塗佈液狀樹脂11a。所塗佈的液狀樹脂11a不僅掩埋粗糙面，而且藉由液狀樹脂11a的表面張力而使液狀樹脂11a的表面平滑化。即，於剛塗佈後，表面張力作用於液狀樹脂11a，液狀樹脂11a的表面變得平滑。確 認液狀樹脂11a的表面平滑化後，對基體10及液狀樹脂11a進行加熱，將液狀樹脂11a硬化而形成樹脂層11。
於步驟S3中，將形成有樹脂層11的基體10配置於真空容器內，藉由濺鍍而於樹脂層11的表面形成金屬薄膜12。
另一方面，於步驟S4中準備基體20，於步驟S5中將基體20配置於真空容器內，藉由濺鍍而於基體20的表面形成金屬薄膜21。此外，基體20的表面並非如基體10的表面般的粗糙面，不需要表面的平滑化，因此並非如基體10般塗佈液狀樹脂。
接著，於步驟S6中，從真空容器中，將基體10以及基體20分別取出，將基體10上下反轉而使金屬薄膜12的面朝向下方，將該金屬薄膜12重疊於基體20的金屬薄膜21上。於該重疊的狀態下，對基體10賦予負重，使基體10的金屬薄膜12與基體20的金屬薄膜21密接。藉由該密接狀態，金屬薄膜12、金屬薄膜21藉由原子擴散而相互接合。藉由原子擴散接合，金屬薄膜12、金屬薄膜21藉由以原子水準進行金屬結合或分子間結合而牢固地接合。藉由金屬薄膜12、金屬薄膜21牢固地接合而構成結構體1。
另外，若將基體10的表面Ra(算術平均粗糙度)、與樹脂層11的表面Ra進行比較，則樹脂層11的表面Ra小於基體10的表面Ra。即，樹脂層11的表面由於經平滑化，故而其表面Ra小，基體10的表面由於是粗糙面，故而其表面Ra大。因此，形成樹脂層11的表面Ra<基體10的表面Ra的關係。另外，藉 由平滑化，樹脂層11的表面Ra變得小於表面平滑而不需要表面的平滑化的基體20的表面Ra。
參照圖3A、圖3B，對由結構體1帶來的效果進行說明。圖3A、圖3B是將接合側面為粗糙面的基體藉由原子擴散而接合的情況的示意圖。圖3A表示現有的結構體100的情況，圖3B表示第1實施形態的結構體1的情況。
於圖3A中，對現有的結構體100的構成進行簡單說明。結構體100具備：基體110，其接合面為粗糙面；金屬薄膜111，形成於基體110的粗糙面上；基體120；以及金屬薄膜121，形成於基體120的表面。而且，藉由將金屬薄膜111、金屬薄膜121重疊來進行原子擴散接合而構成結構體100。
結構體100中，基體110的粗糙面由於平滑性低，故而形成於該粗糙面上的金屬薄膜111的表面的平滑性亦降低。因此，難以使金屬薄膜111、金屬薄膜121密接，亦難以藉由原子擴散而將金屬薄膜111、金屬薄膜121接合。其結果為接合不良。
與此相對，如圖3B所示，結構體1中，由於將基體10的粗糙面以樹脂層11來掩埋，且該樹脂層11的表面為平滑面，故而金屬薄膜12的表面亦為平滑面。因此，可使金屬薄膜12、金屬薄膜21密接，並可藉由原子擴散而將金屬薄膜12、金屬薄膜21接合。
如上所述，不需要用以使基體10的粗糙面成為平滑面的研磨處理，可省去研磨處理的作業，從而可抑制成本。另外， 即便基體10為粗糙面，亦可藉由原子擴散來進行接合，而可擴大藉由原子擴散的接合構件的應用範圍。
此外，於基體20的形成金屬薄膜21的面為粗糙面的情況下，亦可於基體20與金屬薄膜21之間形成樹脂層11。於該情況下，圖2中，於步驟S4與步驟S5之間進行與步驟S2同樣的步驟。
接著，參照圖4~圖6B，對第2實施形態進行說明。於第2實施形態中，結構體2的基體30的接合側面為平滑面，樹脂層31的特性與樹脂層11的特性不同。其他的構成與第1實施形態的結構體1相同。因此，於圖4中，對與圖1相同的構成標註相同符號，並省略其說明。
樹脂層31是以既定的厚度形成於基體30的接合側面(平滑面)。樹脂層31是藉由利用旋塗法，將液狀的樹脂塗佈於基體30的接合側面，進行硬化而形成。作為樹脂層31的特性，必須選擇與金屬薄膜12的接合相容性良好的材質的樹脂，另外，必須選擇硬化後具有彈性的材質。作為此種樹脂可使用例如矽酮樹脂、氟樹脂、聚醯亞胺樹脂、丙烯酸樹脂、或者環氧樹脂等。
參照圖5，對結構體2的製造進行說明。於圖5中的步驟S11中，準備基體30。
於步驟S12中，於基體30的接合側面塗佈液狀樹脂31a。液狀樹脂31a的材料是使用硬化後亦具有彈性的樹脂材料。所塗佈的液狀樹脂31a藉由液狀樹脂31a的表面張力而使液狀樹 脂31a的表面變得平滑。確認液狀樹脂31a的表面平滑化後，將基體30及液狀樹脂31a進行加熱，使液狀樹脂31a硬化而形成樹脂層31。此外，樹脂層31於硬化後亦具有彈性。
於步驟S13中，將形成有樹脂層31的基體30配置於真空容器內，藉由濺鍍而於樹脂層31的表面形成金屬薄膜12。
於步驟S14、步驟S15中，以與步驟S4、步驟S5相同的方式，於基體20上形成金屬薄膜21。繼而，於步驟S16中，將基體30上下反轉而使金屬薄膜12的面朝向下方，將該金屬薄膜12重疊於基體20的金屬薄膜21上。於該重疊的狀態下，對基體30賦予負重，使基體30的金屬薄膜12與基體20的金屬薄膜21密接。藉由該密接狀態，金屬薄膜12、金屬薄膜21藉由原子擴散而相互接合。藉由原子擴散接合，金屬薄膜12、金屬薄膜21藉由以原子水準進行金屬結合或分子間結合而牢固地接合。藉由金屬薄膜12、金屬薄膜21牢固地接合而構成結構體2。
參照圖6A、圖6B，對由結構體2帶來的效果進行說明。圖6A、圖6B是對在金屬薄膜間進入有異物D的情況進行說明的示意圖。圖6A表示現有的結構體200的情況，圖6B表示第2實施形態的結構體2的情況。
於圖6A中，現有的結構體200具備：基體210；金屬薄膜211，形成於基體210的表面；基體220；以及金屬薄膜221，形成於基體220的表面。而且，藉由將金屬薄膜211、金屬薄膜221重疊，進行原子擴散接合而構成結構體200。
於結構體200中，當將金屬薄膜211、金屬薄膜221重疊時，若於金屬薄膜211、金屬薄膜221之間進入異物D，則異物D成為障礙，變得難以將金屬薄膜211、金屬薄膜221重疊，從而難以使金屬薄膜211、金屬薄膜221密接。因此，亦難以藉由原子擴散而將金屬薄膜211、金屬薄膜221接合，其結果為接合不良。
與此相對，如圖6B所示，於第2實施形態的結構體2中，若於在金屬薄膜12、金屬薄膜21之間進入有異物D的狀態下，將金屬薄膜12、金屬薄膜21重疊，則樹脂層31根據異物D的形狀而進行彈性變形。而且，於包入有異物D的狀態下，金屬薄膜12、金屬薄膜21相互密接。即，於異物D以外的金屬薄膜12、金屬薄膜21的部分，金屬薄膜12、金屬薄膜21相互密接。
異物D以外的金屬薄膜12、金屬薄膜21的部分由於具有充分的重疊面積，故而可藉由原子擴散而將金屬薄膜12、金屬薄膜21接合，即便異物D進入，亦可獲得結構體2。
另外，即便金屬薄膜12、金屬薄膜21的表面的平滑性低，亦藉由樹脂層31進行彈性變形，而使金屬薄膜12、金屬薄膜21相互密接，因此可藉由原子擴散而將金屬薄膜12、金屬薄膜21接合。
繼而，參照圖7，對第2實施形態的變形例進行說明。如圖7所示，於表示第2實施形態的變形例的結構體3中，樹脂層22亦形成於基體20側。即，於基體20的接合側面形成有樹脂層22。樹脂層22的材質是使用與樹脂層31同樣地於硬化後具有 彈性的材料。
如上所述，藉由在基體30、基體20的兩者上形成樹脂層31、樹脂層22，則於在金屬薄膜12、金屬薄膜21之間進入有異物D的情況下，樹脂層31、樹脂層22根據異物D的形狀而進行彈性變形，因此與第2實施形態同樣，於包入有異物D的狀態下，金屬薄膜12、金屬薄膜21相互密接，可藉由原子擴散接合方法而將金屬薄膜12、金屬薄膜21接合。
另外，藉由樹脂層31、樹脂層22，彈性變形量增加，因此亦可應對更大的異物D，另外，可提高金屬薄膜12、金屬薄膜21的對相互的面的追隨性，而可提高金屬薄膜12、金屬薄膜21的密接性。
接著，參照圖8，對第3實施形態進行說明。於第3實施形態中，結構體為半導體裝置4。如圖8所示，半導體裝置4具備：基體40；晶片零件50；樹脂層52，設置於晶片零件50的電極51之間；以及金屬薄膜42、金屬薄膜53，將基體40與晶片零件50連接。晶片零件50例如為形成有半導體的半導體晶片。
基體40為Si基板(矽基板)。於基體40中埋設有多個電極41。於晶片零件50的下表面，設置有從該下表面突出既定高度的多個電極51。多個電極51是以與設置於基體40上的電極41分別對應的方式來配置。
於電極51之間，塗佈與第1實施形態中的液狀樹脂11a同樣的液狀樹脂，電極51的前端面與液狀樹脂的表面成為同一 面。於晶片零件50的電極51之間塗佈液狀樹脂，藉由該液狀樹脂的表面張力，液狀樹脂的表面變得平滑。而且，該平滑面與電極51的前端面成為同一面。藉由在該狀態下將液狀樹脂硬化而形成樹脂層52。
於晶片零件50的電極51的前端面以及樹脂層52的表面，形成有與第1實施形態中的金屬薄膜12同樣的金屬薄膜53。另外，於基體40的表面，亦形成有與第1實施形態中的金屬薄膜12同樣的金屬薄膜42。而且，使晶片零件50的電極51與基體40的電極41對向，藉由原子擴散而將金屬薄膜42、金屬薄膜53接合，藉此，晶片零件50與基體40接合而構成半導體裝置4。
如上所述，藉由在晶片零件50的電極51之間形成樹脂層52，可擴大形成金屬薄膜53的面積，而可使晶片零件50與基體40更牢固地進行原子擴散接合。
以上所說明的各實施形態已作為藉由原子擴散接合而將2個基體接合的情況來進行了說明，但並不限定於此，例如，亦可於半導體晶片的表面與背面塗佈液狀樹脂，使其硬化而於兩面形成樹脂層，於其上積層多層的形成有金屬薄膜的中間晶片零件，且於其兩端，於半導體晶片的表面或者背面塗佈液狀樹脂，使其硬化而於其中一面形成樹脂層，於其上積層形成有金屬薄膜的端部晶片零件來進行原子擴散接合，從而形成積層有多層的半導體晶片的結構體。
1:結構體
10、20:基體
11:樹脂層
11a:液狀樹脂
12、21:金屬薄膜
S1~S6:步驟

Claims (21)

  1. 一種結構體的製造方法，其將多個構件進行接合，其特徵在於包括： 於至少一個所述構件的表面塗佈液狀樹脂的步驟； 藉由所塗佈的所述液狀樹脂的表面張力，使所述液狀樹脂的表面平滑化的步驟； 將所述液狀樹脂硬化而形成樹脂層的步驟； 於所述樹脂層的表面形成金屬薄膜的步驟； 於其他的所述構件的表面形成所述金屬薄膜的步驟；以及 將至少一個所述構件的所述金屬薄膜與其他的所述構件的所述金屬薄膜密接而進行接合的步驟。
  2. 如申請專利範圍第1項所述的結構體的製造方法，其中所述樹脂層具有彈性。
  3. 如申請專利範圍第1項所述的結構體的製造方法，其中所述構件為半導體。
  4. 如申請專利範圍第2項所述的結構體的製造方法，其中所述構件為半導體。
  5. 如申請專利範圍第3項所述的結構體的製造方法，其中至少一個所述半導體具有從表面突出既定高度的多個電極，並且 將所述液狀樹脂塗佈於所述多個電極之間，藉由所述液狀樹脂的表面張力，使所述液狀樹脂的表面平滑化，並且將所述多個電極的前端面與所述液狀樹脂的表面設為同一面。
  6. 如申請專利範圍第4項所述的結構體的製造方法，其中至少一個所述半導體具有從表面突出既定高度的多個電極，並且 將所述液狀樹脂塗佈於所述多個電極之間，藉由所述液狀樹脂的表面張力，使所述液狀樹脂的表面平滑化，並且將所述多個電極的前端面與所述液狀樹脂的表面設為同一面。
  7. 如申請專利範圍第1項至第6項中任一項所述的結構體的製造方法，其中至少一個所述構件的所述金屬薄膜藉由原子擴散接合而與其他的所述構件的所述金屬薄膜接合。
  8. 如申請專利範圍第3項所述的結構體的製造方法，其中所述構件為形成有半導體的半導體晶片， 所述液狀樹脂塗佈於所述半導體晶片的表面或所述半導體晶片的背面或者所述兩面上，並且 所塗佈的所述液狀樹脂是以其表面粗糙度與其他的所述構件的表面粗糙度相比變小的方式而平滑化。
  9. 如申請專利範圍第4項所述的結構體的製造方法，其中所述構件為形成有半導體的半導體晶片， 所述液狀樹脂塗佈於所述半導體晶片的表面或所述半導體晶片的背面或者所述兩面上，並且 所塗佈的所述液狀樹脂是以其表面粗糙度與其他的所述構件的表面粗糙度相比變小的方式而平滑化。
  10. 一種結構體的製造方法，其將多個構件接合，其特徵在於包括： 於多個所述構件的表面分別塗佈液狀樹脂的步驟； 藉由所塗佈的所述液狀樹脂的表面張力，使所述液狀樹脂的表面平滑化的步驟； 將所述液狀樹脂硬化而形成樹脂層的步驟； 於所述樹脂層的表面形成金屬薄膜的步驟；以及 將多個所述構件的所述金屬薄膜相互密接而進行接合的步驟。
  11. 如申請專利範圍第10項所述的結構體的製造方法，其中所述樹脂層具有彈性。
  12. 如申請專利範圍第10項所述的結構體的製造方法，其中所述構件為半導體。
  13. 如申請專利範圍第11項所述的結構體的製造方法，其中所述構件為半導體。
  14. 如申請專利範圍第12項所述的結構體的製造方法，其中至少一個所述半導體具有從表面突出既定高度的多個電極，並且 將所述液狀樹脂塗佈於所述多個電極之間，藉由所述液狀樹脂的表面張力，使所述液狀樹脂的表面平滑化，並且將所述多個電極的前端面與所述液狀樹脂的表面設為同一面。
  15. 如申請專利範圍第13項所述的結構體的製造方法，其中至少一個所述半導體具有從表面突出既定高度的多個電極，並且 將所述液狀樹脂塗佈於所述多個電極之間，藉由所述液狀樹脂的表面張力，使所述液狀樹脂的表面平滑化，並且將所述多個電極的前端面與所述液狀樹脂的表面設為同一面。
  16. 如申請專利範圍第10項至第15項中任一項所述的結構體的製造方法，其中至少一個所述構件的所述金屬薄膜藉由原子擴散接合而與其他的所述構件的所述金屬薄膜接合。
  17. 如申請專利範圍第12項所述的結構體的製造方法，其中所述構件為形成有半導體的半導體晶片， 所述液狀樹脂塗佈於所述半導體晶片的表面或所述半導體晶片的背面或者所述兩面上，並且 所塗佈的所述液狀樹脂是以其表面粗糙度與其他的所述構件的表面粗糙度相比變小的方式而平滑化。
  18. 如申請專利範圍第13項所述的結構體的製造方法，其中所述構件為形成有半導體的半導體晶片， 所述液狀樹脂塗佈於所述半導體晶片的表面或所述半導體晶片的背面或者所述兩面上，並且 所塗佈的所述液狀樹脂是以其表面粗糙度與其他的所述構件的表面粗糙度相比變小的方式而平滑化。
  19. 一種結構體，其於多個構件的各表面分別形成金屬薄膜，且經由所述金屬薄膜而接合有所述構件，所述結構體的特徵在於包括： 樹脂層，設置於至少一個所述構件與所述金屬薄膜之間，且表面平滑化。
  20. 如申請專利範圍第19項所述的結構體，其中所述樹脂層具有彈性。
  21. 如申請專利範圍第19項所述的結構體，其中至少一個所述構件為半導體晶片，並且 所述樹脂層的表面粗糙度小於所接合的對方的所述構件的表面粗糙度。
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