JP5455622B2 - 電界効果トランジスタのゲート誘電体の製造方法 - Google Patents

電界効果トランジスタのゲート誘電体の製造方法 Download PDF

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JP5455622B2
JP5455622B2 JP2009510056A JP2009510056A JP5455622B2 JP 5455622 B2 JP5455622 B2 JP 5455622B2 JP 2009510056 A JP2009510056 A JP 2009510056A JP 2009510056 A JP2009510056 A JP 2009510056A JP 5455622 B2 JP5455622 B2 JP 5455622B2
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gate dielectric
plasma
oxide layer
layer
substrate
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JP2009536459A5 (enExample
JP2009536459A (ja
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タイ， チェン シュア，
コリー クザルニク，
アンドレアス， ジー． ヘゲドゥス，
クリストファー ショーン オルセン，
クハレド ズィー． アハメド，
フィリップ アラン クラウス，
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Applied Materials Inc
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Applied Materials Inc
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    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
    • H01L21/02329—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen
    • H01L21/02332—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen into an oxide layer, e.g. changing SiO to SiON
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    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Chemical Kinetics & Catalysis (AREA)
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  • Plasma & Fusion (AREA)
  • Crystallography & Structural Chemistry (AREA)
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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
JP2009510056A 2006-05-05 2007-05-02 電界効果トランジスタのゲート誘電体の製造方法 Active JP5455622B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/381,960 US7727828B2 (en) 2005-10-20 2006-05-05 Method for fabricating a gate dielectric of a field effect transistor
US11/381,960 2006-05-05
PCT/US2007/068056 WO2007131051A1 (en) 2006-05-05 2007-05-02 Method for fabricating a gate dielectric of a field effect transistor

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JP2009536459A JP2009536459A (ja) 2009-10-08
JP2009536459A5 JP2009536459A5 (enExample) 2010-05-27
JP5455622B2 true JP5455622B2 (ja) 2014-03-26

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US (1) US7727828B2 (enExample)
EP (1) EP2022091A1 (enExample)
JP (1) JP5455622B2 (enExample)
KR (1) KR20090007633A (enExample)
CN (1) CN101438398A (enExample)
TW (1) TWI415193B (enExample)
WO (1) WO2007131051A1 (enExample)

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US7727828B2 (en) * 2005-10-20 2010-06-01 Applied Materials, Inc. Method for fabricating a gate dielectric of a field effect transistor
US7888217B2 (en) * 2005-10-20 2011-02-15 Applied Materials, Inc. Method for fabricating a gate dielectric of a field effect transistor
WO2007132884A1 (ja) * 2006-05-17 2007-11-22 Hitachi Kokusai Electric Inc. 半導体装置の製造方法および基板処理装置
US7846793B2 (en) * 2007-10-03 2010-12-07 Applied Materials, Inc. Plasma surface treatment for SI and metal nanocrystal nucleation
US20090142899A1 (en) * 2007-12-04 2009-06-04 Jensen Jacob M Interfacial layer for hafnium-based high-k/metal gate transistors
US7816278B2 (en) * 2008-03-28 2010-10-19 Tokyo Electron Limited In-situ hybrid deposition of high dielectric constant films using atomic layer deposition and chemical vapor deposition
US7638442B2 (en) * 2008-05-09 2009-12-29 Promos Technologies, Inc. Method of forming a silicon nitride layer on a gate oxide film of a semiconductor device and annealing the nitride layer
US8258511B2 (en) 2008-07-02 2012-09-04 Applied Materials, Inc. Thin film transistors using multiple active channel layers
US7981808B2 (en) * 2008-09-30 2011-07-19 Freescale Semiconductor, Inc. Method of forming a gate dielectric by in-situ plasma
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
US8168462B2 (en) * 2009-06-05 2012-05-01 Applied Materials, Inc. Passivation process for solar cell fabrication
US8802201B2 (en) 2009-08-14 2014-08-12 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
JP5371831B2 (ja) * 2010-02-25 2013-12-18 三菱電機株式会社 半導体装置の製造方法
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