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  • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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  • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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  • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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  • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
  • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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  • H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
  • H01L21/02329—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen
  • H01L21/02332—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen into an oxide layer, e.g. changing SiO to SiON
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  • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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  • H01L21/28158—Making the insulator
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  • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
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Definitions

• Embodiments of the present invention generally relate to methods for fabricating devices on semiconductor substrates. More specifically, the present invention relates to a method for fabricating field effect transistors and, in particular, gate dielectrics of the field effect transistors.
• Integrated circuits may include more than one million micro-electronic field effect transistors ⁇ e.g., complementary metal-oxide-semiconductor (CMOS) field effect transistors) that are formed on a substrate and cooperate to perform various functions within the circuit.
• CMOS transistor comprises a gate structure disposed over a channel region formed between source and drain regions of the transistor.
• the gate structure generally comprises a gate electrode and a gate dielectric.
• the gate electrode is disposed over the gate dielectric and, in operation, is used to control a flow of charge carriers (Ae., electric current) in the channel region beneath the gate dielectric.
• the gate dielectric is typically formed from silicon nitride (SisN 4 ) or silicon oxynitride (SiON).
• a thickness of the gate dielectric in advanced integrated circuits is selected in a range of about 20-30 Angstroms or less.
• fabrication of gate structures having such ultra-thin gate dielectrics represents a challenging task.
• One specific problem is that present manufacturing techniques cause high leakage currents through the gate dielectric and decrease mobility of the charge carriers in the channel region due to diffusion of large amounts of nitrogen (N 2 ) into the silicon / gate dielectric interface of the transistors.
• Embodiments of the present invention generally relates to a method for fabricating a gate dielectric of a field effect transistor.
• the invention may be utilized in integrated circuit devices, such as microprocessors, application specific integrated circuits (ASICs), electronic memory devices, and the like.
• the method includes steps of removing a native oxide layer from a silicon substrate, forming a first oxide layer on the substrate, forming a gate dielectric layer (e.g., silicon nitride (Si 3 N 4 ), hafnium oxide (HfO 2 ), hafnium silicate (HfSi x O y , where x and y are integers), and the like) over the first oxide layer, forming a second oxide layer over the gate dielectric layer, and annealing the formed layers and interface between the first oxide layer and the substrate.
• a gate dielectric layer e.g., silicon nitride (Si 3 N 4 ), hafnium oxide (HfO 2 ), hafnium silicate (HfSi x O y , where x and y are integers), and the like
• the first oxide layer on the substrate may be nitridized prior to forming the gate dielectric layer.
• the gate dielectric layer may be nitridized prior to forming the second oxide layer on the gate dielectric layer.
• at least portions of the method may be performed using processing reactors of an integrated semiconductor substrate processing system (i.e., a cluster tool).
• the oxide layer on the substrate is formed by depositing the first oxide layer, and the oxide layer on the gate dielectric layer is formed by oxidizing the gate dielectric layer.
• the oxide layer on the substrate is formed by depositing the oxide layer, and the oxide layer on the gate dielectric layer is formed by depositing the second oxide layer on the gate dielectric layer.
• a method for fabricating a gate dielectric of a field effect transistor upon a substrate includes the steps of removing a native oxide layer from the substrate and placing the substrate in a nitrogen purged or vacuum environment, forming a first thermal oxide layer on the silicon substrate, forming a gate dielectric layer on the first thermal oxide layer, forming a second oxide layer on the gate dielectric layer, and thermally annealing the substrate having the first thermal oxide layer and the oxidized gate dielectric layer formed thereon.
• the oxide layer on the substrate is formed by depositing the first oxide layer, and the oxide layer on the gate dielectric layer is formed by oxidizing at least a portion of the gate dielectric layer using an oxygen-containing plasma.
• the oxide layer on the substrate is formed by depositing the first oxide layer, and the oxide layer on the gate dielectric layer is formed by forming a thermal oxide layer, i.e., depositing the second oxide layer on the gate dielectric layer.
• an integrated semiconductor substrate processing system for fabricating a gate dielectric of a field effect transistor.
• the system includes at least one first reactor configured for forming a thermal oxide layer on a silicon substrate, at least one second reactor configured for depositing a gate dielectric layer on the thermal oxide layer, at least one third reactor configured for oxidizing the gate dielectric layer, at least one load-lock chamber, at least one substrate transfer chamber coupled to each of the reactors and load lock chambers, and a controller administering and monitoring operation of the processing system.
• an integrated semiconductor substrate processing system for fabricating a gate dielectric of a field effect transistor.
• the system includes a reactor configured for forming a thermal oxide layer on a silicon substrate, the reactor being configured for depositing a gate dielectric layer on the thermal oxide layer and being configured for forming a thermal oxide layer on the gate dielectric layer; a decoupled plasma source; one or more load lock chambers; at least one substrate transfer chamber coupled to the reactor and the load lock chambers; and a controller for administering and monitoring operation of the processing system.
• FIG. 1 depicts a flow diagram illustrating a method for fabricating a gate dielectric of a field effect transistor in accordance with one embodiment of the present invention
• FIGS. 2A-2E depict a series of schematic, cross-sectional views of a substrate where the gate structure is fabricated in accordance with the method of FIG. 1 ;
• FIG. 3 depicts a schematic diagram of an exemplary integrated semiconductor substrate processing system of the kind that may be used to practice portions of the invention.
• FIG. 4 depicts a schematic diagram of an exemplary integrated semiconductor substrate processing chamber of the kind that may be used to practice portions of the invention.
• the present invention is a method for fabricating a gate dielectric of field effect transistors having ultra-thin gate dielectrics ⁇ e.g., less than about 20 - 30 Angstroms).
• the invention may be used in fabrication of integrated semiconductor devices and circuits.
• FIG. 1 is a flow diagram illustrating a method 100 for fabricating a gate dielectric of a field effect transistor in accordance with one embodiment of the present invention.
• the method 100 includes processing steps performed upon a substrate during fabrication of the gate structure of an exemplary CMOS field effect transistor. In some embodiments, these processing steps are performed in the depicted order. In alternate embodiments, at least two of these steps may be performed contemporaneously or in a different order. Sub-steps and auxiliary procedures ⁇ e.g., substrate transfers between processing reactors, process control steps, and the like) are well known in the art and, as such, herein are omitted.
• At least portions of the method 100 may be performed using processing reactors of an integrated semiconductor substrate processing system ⁇ i.e., a cluster tool).
• a processing system is the CENTURA ® integrated processing system, available from Applied Materials, Inc. of Santa Clara, California.
• a general description of a suitable processing system 300 and a suitable CVD chamber 400 is discussed below with reference to FIG. 3 and Fig. 4, respectively.
• FIGS. 2A-2E depict a series of schematic, cross-sectional views of a substrate upon which a gate structure is fabricated using the method of FIG. 1.
• the cross-sectional views in FIGS. 2A-2E relate to individual processing steps performed to fabricate the gate dielectric.
• the images in FIGS. 2A-2E are not depicted to scale and are simplified for illustrative purposes. To best understand the invention, the reader should refer simultaneously to FIGS. 1 and 2A-2E.
• the method 100 starts at step 102 and proceeds to step 104.
• a silicon (Si) substrate 200 is provided ⁇ e.g., 200 mm wafer, 300 mm wafer, and the like) and exposed to a solution for removing a native oxide (SiO 2 ) layer 204 from a surface of the substrate (FIG. 2A).
• the method 100 may be utilized to form a gate structure (not shown) of a transistor.
• the gate structure is generally disposed, for example, in region 220 above channel region 226 and source and drain regions 222 and 224 (depicted with broken lines) of the transistor. For graphical clarity, regions 220-226 are shown only in FIG. 2A.
• the layer 204 is removed using a solution comprising hydrogen fluoride (HF) and deionized (Dl) water ⁇ i.e., a hydrofluoric acid solution).
• the solution has between about 0.1 and 10% by weight of HF and a temperature of about 20 - 30 degrees Celsius ( 0 C). In another embodiment, the solution has about 0.5% of HF and a temperature of about 25°C.
• Step 104 can use a wet dip of the substrate 200 into the solution, followed by a rinse in de-ionized water, and may be performed in either a single wafer or batch baths, including ultrasonically enhanced baths. Alternatively, step 104 may be performed using a single substrate wet cleaning reactor of the integrated processing system 300. In another embodiment, the layer 204 may be removed using an RCA clean method.
• the substrate 200 is placed in a vacuum load lock or nitrogen (N 2 ) purged environment.
• a thermal oxide (S 1 O 2 ) layer 206 is grown on the substrate 200 (FIG. 2B).
• the layer 206 may have a thickness between about 2 - 40 Angstroms, preferably between about 2 - 10 Angstroms. In one embodiment, the layer 206 has a thickness between about 6 - 10 Angstroms.
• Step 106 can be performed using, e.g., a RADIANCE ® rapid thermal processing (RTP) reactor, a decoupled plasma oxidation (DPO) reactor, or a plasma enhanced chemical vapor deposition (PECVD) reactor of the integrated processing system 300.
• RADIANCE ® reactor is available from Applied Materials, Inc., of Santa Clara, California.
• step 106 may be performed using an RTP reactor to grow the layer 206 by providing oxygen (O 2 ) at about 0.5 - 10 slm, while maintaining a substrate temperature of about 750 - 850°C, and a pressure in the reaction chamber of about 0.1 - 50 Torr.
• the duration of the process may be between about 5 - 30 seconds.
• O 2 is provided at about 2 slm, while maintaining a temperature of about 800 0 C and a pressure of about 2 Torr.
• the layer 206 may be grown in an RTP reactor by providing nitrous oxide (N 2 O) at a rate of about 1 - 10 slm and hydrogen (H 2 ) at a rate of about 10 - 500 seem ⁇ i.e., a N 2 O:H 2 flow ratio ranging from about 2:1 - 1000:1 ) while maintaining a substrate temperature of about 700 - 850 0 C. Further, step 106 maintains a pressure in the reaction chamber at about 0.5 - 20 Torr. The duration of the process may be between about 5 - 60 seconds.
• N 2 O nitrous oxide
• H 2 hydrogen
• step 106 may be performed using a process chamber suitable for producing a low-energy plasma, such as a DPO chamber.
• a process chamber suitable for producing a low-energy plasma such as a DPO chamber.
• the low energy of the plasma helps to control the reaction at the surface of the substrate and/or layer.
• the plasma may be produced using a quasi-remote plasma source, an inductive plasma source, and/or an RLSA source, among other plasma sources.
• sources of CW and/or pulsed microwave power such as magnetron or RLSA microwave sources, may be used to form the layer 206.
• the layer 206 may be grown in a DPO reactor by exposing the substrate 200 to a plasma containing at least one of oxygen (O 2 ), nitric oxide (NO), nitrous oxide (N 2 O), and the like.
• the plasma may optionally contain nitrogen (N 2 ) and/or an optional inert gas (e.g., argon (Ar), helium (He), and the like).
• the layer 206 may be formed using a DPO reactor by providing oxygen (O 2 ) at about 10 - 2000 seem, a substrate pedestal temperature of about 20 - 500°C, and a pressure in the reaction chamber between about 5 - 1000 m Torr.
• the radio-frequency (RF) plasma is energized, e.g., at 13.56 MHz, using either a continuous wave (CW) or pulsed plasma power source of up to about 3-5 kW.
• the peak RF power may be in a range of about 10 - 3000 W
• the frequency may be in a range of about 2 - 100 kHz
• the duty cycle may be in a range of about 2 - 50%.
• This process may be performed for about 1 - 180 sec.
• O 2 is provided at about 200 seem, and about 500 W of peak RF power is pulsed at about 10 kHz with a duty cycle of about 5% applied to an inductive plasma source, at a temperature of about 25°C and a pressure of about 40 - 80 mTorr, for about 15 - 60 sec.
• a thermal silicon oxide layer 206 may be deposited using a PE-CVD chamber as described with respect to FIG. 4.
• Oxygen (O 2 ), nitric oxide (NO), nitrous oxide (N 2 O), or the like is injected via an upper gas injector 435, whereas silane (SiH 4 ) is injected via a lower gas injector.
• Other silicon source disclosed in embodiments described herein may alternatively be used.
• the gases injected via upper gas injector 435 may be excited by an inductively coupled plasma.
• the oxygen is excited by a radio-frequency (RF) plasma at for example 13.56 MHz.
• the plasma source may be either operated in pulsed mode or in a CW mode. In the event pulsed RF plasma is applied, the peak power may be in the range of 10 to 3000 watts. In the event a CW mode plasma is applied, the peak power may be in the range of 10W to 1000W.
• the layer 206 may be grown by providing oxygen at about 10-2000 seem, a pedestal temperature of about 20°C to 500°C and a pressure in the chamber between 1 and 50 mTorr.
• the oxide layer 206 may be nitridized.
• the layer 206 may be nitridized, for example, in a plasma process or in a thermal process.
• step 107 forms a sub-layer 207 of nitridized material in an upper portion of the layer 206 (FIG. 2C).
• a thickness of the nitridized sub-layer 207 is typically formed in a range from about 0.5 - 5 Angstroms, preferably about 1 - 3 Angstroms.
• the layer 206 is exposed to a nitrogen-containing plasma.
• the plasma contains nitrogen (N 2 ), and may optionally contain one or more optional inert gases (e.g., argon (Ar), helium (He), and the like).
• Step 107 can be performed using, e.g., a decoupled plasma nitridation (DPN) plasma reactor of the integrated processing system 300.
• DPN decoupled plasma nitridation
• the sub-layer 207 may be formed using a DPN reactor by providing nitrogen (N 2 ) at about 10 - 2000 seem, a substrate pedestal temperature of about 20 - 500°C, and a pressure in the reaction chamber between about 5 - 1000 mTorr.
• the radio-frequency (RF) plasma is energized, e.g., at 13.56 MHz, using either a continuous wave (CW) or pulsed plasma power source of up to about 3-5 kW.
• CW continuous wave
• peak RF power, frequency and a duty cycle are typically selected in the ranges from about 10 - 3000 W, about 2 - 100 kHz, and about 2 - 50%, respectively. This process may be performed for about 1 -180 sec.
• N 2 is provided at about 200 seem, and about 1000 W of peak RF power is pulsed at about 10kHz with a duty cycle of about 5% applied to an inductive plasma source, at a temperature of about 25°C and a pressure of about 40 - 80 mTorr, for about 15 - 60 sec.
• the plasma may be produced using a quasi- remote plasma source, an inductive plasma source, and a radial line slotted antenna (RLSA) source, among other plasma sources.
• sources of CW and/or pulsed microwave power may be used to form the sub-layer 207.
• the thermal oxide layer 206 can also be thermally nitrided by exposing it to an ammonia (NH 3 ) gas, or a mixture of NH 3 and N 2 , or one or more inert gas such as helium, argon, and the like at high temperature in an RTP reactor to form the sub-layer 207 of nitridized material.
• NH 3 ammonia
• inert gas such as helium, argon, and the like
• the sub-layer 207 may be formed using an RTP reactor by providing ammonia (NH 3 ) gas at 5 to 1000 seem while maintaining a substrate temperature of 700 0 C - 1000°C and a pressure in the reactor chamber of about 0.1 - 10Torr. The duration of the process may be between about 5 - 120 seconds.
• NH 3 is provided at 100 seem while maintaining a temperature of about 800 0 C and a pressure of 0.3 Torr for a time of 15 seconds.
• batch furnaces may be used to form the sub-layer 207.
• a gate dielectric layer 208 is deposited over the thermal oxide layer 206 (FIG. 2D).
• the layer 208 may be formed from silicon nitride (Si 3 N 4 ) to a thickness of about 2 - 20 Angstroms or a high-k material, such as hafnium oxide (HfO2), hafnium silicate (such as Hf x Si y O), where x and y are integers), and the like, or a combination thereof, to a thickness of about 10 - 60 Angstroms.
• Step 108 can be performed using, e.g., a chemical vapor deposition (CVD) reactor or an atomic layer deposition (ALD) reactor of the integrated processing system 300, such as a CVD reactor or an ALD reactor.
• CVD chemical vapor deposition
• ALD atomic layer deposition
• One suitable CVD reactor is an XGen CVD reactor, available from Applied Materials, Inc.
• the gate dielectric layer 208 may comprise silicon nitride (Si 3 N 4 ) and may be formed by providing ammonia (NH 3 ) at about 100 -1000 seem, silane (SiH 4 ) at about 1 - 100 seem (i.e., a NH 3 :SiH 4 flow ratio ranging from 1 :1 to 1000:1), and nitrogen (N 2 ) at about 10 - 1000 seem, while maintaining a substrate pedestal temperature of about 400 - 750 0 C, and a pressure In the reaction chamber of between about 0.1 -50 Torr. This process may be performed for about 30 - 180 sec.
• NH 3 ammonia
• SiH 4 silane
• N 2 nitrogen
• NH3 is provided at about 500 seem, SiH4 at about 10 seem (i.e.:, a NH 3 : SiH 4 flow ratio of about 50:1), and N 2 at about 25 seem, while maintaining a temperature of about 600°C and pressure of about 5 Torr in the chamber.
• Other silicon source gas or chemical can be used in place of silane (SiH 4 ) such as disilane (Si 2 H 6 ), dichlorosilane (DCS), trichlorosilane (TCS), tetrachlorosilane (TCS) or hexachlorodisilane (HCD).
• the gate dielectric layer 208 may comprise hafnium oxide or hafnium silicate and may be deposited using a CVD or an ALO process.
• the hafnium oxide or hafnium silicate gate dielectric layer 208 may be formed using metal-organic or inorganic precursors of hafnium and silicon with an oxidizer comprising at least one of ozone, water, or remote plasma oxygen radicals.
• the dielectric layer formed of silicon nitride (Si 3 N 4 ) is deposited in a PE-CVD chamber as described with respect to FIG. 4.
• Ammonia (NH 3 ) and/or nitrogen (N 2 ) is injected via an upper gas injector, whereas silane (SiH 4 ) is injected via a lower gas injector.
• NH 3 is injected at about 100-1000 seem and silane is injected at about 1 -100 seem, i.e., at a flow rate ratio ranging from 1 :1 to 1000:1.
• N 2 may be injected at a flow rate of 10-1000 seem.
• the pedestal is maintained at a temperature of about 400°C to about 750°C and a pressure in the reactor chamber is about 1 mTorr to 50 mTorr, typically about 1 mTorr to 20 mTorr.
• a pressure in the reactor chamber is about 1 mTorr to 50 mTorr, typically about 1 mTorr to 20 mTorr.
• Other silicon source disclosed in embodiments described herein may alternatively be used.
• NH 3 and/or N 2 are excited by the inductively coupled plasma.
• the ammonia and/or nitrogen are excited by a radio-frequency (RF) plasma at for example 13.56 MHz.
• RF radio-frequency
• the plasma source may be either operated in pulsed mode or in a CW mode. In the event pulsed RF plasma is applied, the peak power may be in the range of 10 to 3000 watts. In the event a CW mode plasma is applied, the peak power may be in the range of 10W to 1000W.
• the gate dielectric layer 208 is oxidized by exposure to an oxygen-containing plasma.
• step 110 forms a sub-layer 210 of oxidized material in an upper portion of the layer 208 (FIG. 2E).
• a thickness of the oxidized sub-layer 210 is typically selected in a range from about 0.2 - 10 Angstroms, preferably about 0.5 - 5 Angstroms.
• the plasma contains at least one of oxygen (O 2 ), nitric oxide (NO), nitrous oxide (N 2 O), and the like, as well as may contain optional nitrogen (N 2 ) and/or an optional inert gas ⁇ e.g., argon (Ar), helium (He), and the like).
• Step 110 may be performed using a process chamber suitable for producing a low- energy plasma.
• the low energy of the plasma helps to control the reaction at the surface of the substrate and/or layer.
• the plasma may be produced using a quasi-remote plasma source, an inductive plasma source, and/or an RLSA source, among other plasma sources.
• sources of CW and/or pulsed microwave power such as magnetron or RLSA microwave sources, may be used to form the sub-layer 210.
• step 110 may be performed using, e.g., the DPN plasma reactor of the integrated processing system 300.
• the sub-layer 210 may be formed by providing oxygen (O 2 ) at about 10 - 2000 seem.
• the oxygen may optionally be mixed with N 2 and/or He and/or Ar.
• the substrate pedestal temperature is maintained at about 20 - 500°C, and the pressure in the reaction chamber may be between about 5 - 1000 mTorr.
• the radio frequency (RF) plasma is energized, e.g., at about 13.56 MHz, using either a continuous wave (CW) or pulsed plasma power source of up to about 3-5 kW.
• CW continuous wave
• pulsed plasma power source of up to about 3-5 kW.
• peak RF power, frequency and a duty cycle are typically selected in the ranges from about 10 - 3000 W, about 2 - 100 kHz, and about 2 - 50%, respectively.
• the oxidation process may be performed for about 1 - 180 seconds.
• O 2 is provided at about 200 seem, with about 1000 W of peak RF power pulsed at about 10 kHz with a duty cycle of about 5% applied to an inductive plasma source, at a temperature of about 25°C and a pressure of about 40 mTorr for about 30 seconds.
• a silicon oxide layer is grown on the silicon nitride dielectric layer 208.
• a thermal silicon oxide layer is deposited using a PE-CVD chamber as described with respect to FIG. 4.
• Oxygen (O 2 ), nitric oxide (NO), nitrous oxide (N 2 O), or the like is excited by an inductively coupled plasma, the gas being injected from an upper gas injection, while a silicon source (e.g. silane) is provided by a lower gas inject.
• a silicon source e.g. silane
• Other silicon source disclosed in embodiments described herein may alternatively be used.
• the plasma source may either be operated in pulsed mode or a CW mode.
• the silicon oxide layer on top of the silicon nitride layer is deposited with a thickness in the range of 2-20 Angstrom and may be grown by providing oxygen at about 10- 2000 seem, a pedestal temperature of about 20°C to 500 °C and a pressure in the chamber between 1 and 50 mTorr.
• the oxygen is excited by a radio-frequency (RF) plasma at for example 13.56 MHz.
• RF radio-frequency
• the peak power may be in the range of 10 to 3000 watts.
• the peak power may be in the range of 10W to 1000W.
• the stack of SiO 2 , Si 3 N 4 , and SiO 2 may be deposited in the same chamber.
• the steps of depositing the layers in the stack may optionally be conducted with plasma assistance.
• the plasma enhanced process allows lower substrate temperatures.
• the chamber arrangement including the evacuation unit for low pressures, the plasma source 410, and the lower chamber body 420 allows for growth of thin layers such that the gate dielectric stack formed of SiO 2 , Si 3 N 4 , and SiO 2 may be thermally deposited.
• Step 112 the gate dielectric layer 208 and oxide/silicon interface between the layer 206 and substrate 200 are annealed.
• Step 112 improves the leakage current reduction of the layers 206 and 210 and increases the mobility of charge carriers in the channel region 226 (shown in FIG. 2A), as well as improves reliability of the oxide/silicon interface.
• Step 112 can be performed using a suitable thermal annealing chamber, such as an RTP ⁇ e.g., a RADIANCE ® or RTP XE+) reactor of the integrated processing system 300, or either a single substrate or batch furnace.
• the annealing process of step 112 may be performed by providing at least one of oxygen (O2) at about 2 - 5000 seem and nitric oxide (NO) at about 100 - 5000 seem, either gas optionally mixed with nitrogen (N 2 ), while maintaining a substrate surface temperature of about 800 - 1100 0 C, and a pressure in the reaction chamber of about 0.1 - 50 Torr.
• the process may be performed for about 5 - 180 seconds.
• O 2 is provided at about 500 seem while maintaining the chamber at a temperature of about 1000 0 C and a pressure of about 0.1 Torr, for a duration of about 15 seconds.
• NO is provided at about 500 seem, while maintaining the chamber at a temperature of about 1000 0 C and a pressure of about 0.5 Torr, for duration of about 15 seconds.
• step 114 method 100 ends.
• the method 100 advantageously forms ultra-thin gate dielectrics representing high resistivity paths for leakage currents and facilitates high mobility of charge carriers in the channel regions of the field effect transistors.
• FIG. 3 depicts a schematic diagram of the exemplary CENTURA ® integrated semiconductor substrate processing system (e.g., cluster tool) 300 of the kind that may be used to practice portions of the method 100 of FIG. 1.
• the particular embodiment of the system 300 is illustrative only and should not be used to limit the scope of the invention. It is contemplated that the method 100 may be practiced using other semiconductor substrate processing systems and/or processing reactors.
• the integrated processing system 300 generally includes vacuum load- lock chambers 322, a vacuum-tight plenum 328 having a robot 330 supplied with a substrate receptacle 334, process modules 310, 312, 314, 316, and 318 coupled to the plenum 328, an input/output module 302, an optional metrology module 326, and a system controller 340.
• the load-lock chambers 322 are used as docking stations for substrate cassettes and protect the plenum 328 from atmospheric contaminants.
• the robot 330 transfers the substrates between the load lock chambers and process modules.
• the depicted embodiment of the robot 330 is exemplary and should not limit the scope of the invention.
• the input/output module 302 comprises at least one front opening unified pod (FOUP) 306 (two FOUPs 306 are depicted) facilitating an exchange of the substrate cassettes between a factory interface 324, the metrology module 326, and the load-lock chambers 322.
• FOUP front opening unified pod
• the system controller 340 generally comprises a central processing unit (CPU) 342, a memory 344, and support circuits 346 and is coupled to and controls modules and apparatus of the integrated processing system 300, as well as enables data collection and feedback from the respective modules to optimize performance of the system 300.
• the controller 340 uses a direct control of modules and apparatus of the system 300 or, alternatively, administers computers (or controllers) associated with these modules and apparatuses.
• At least one of the processing modules 310, 312, 314, 316, and 318 may be an RTP reactor ⁇ e.g., a RADIANCE ® reactor), a PECVD reactor, a CVD reactor ⁇ e.g., an XGen reactor), an ALD reactor, a DPN reactor, and/or other reactor suitable for performing the processes described above on reference to FIG. 1.
• RTP reactor e.g., a RADIANCE ® reactor
• PECVD reactor e.g., a PECVD reactor
• CVD reactor e.g., an XGen reactor
• ALD reactor e.g., XGen reactor
• DPN reactor e.g., a DPN reactor
• One example of a possible configuration of the system 300 for performing processes in accordance with the present invention includes two load-lock- chambers 322, two RTP modules 310 and 312, an ALD module 314, a CVD module 316, a DPN module 318, a metrology module 326 comprising a measuring tool 304 and robots 308 and 320, and the input/output module 302 comprising two FOUPs 306. It is contemplated that other configurations of the system 300 may also be utilized to practice the invention described herein.
• FIG. 4 depicts a schematic diagram of exemplary PE-CVD chamber 400.
• a decoupled plasma nitridation (DPN) plasma source 410 is provided above processing region 402 of lower chamber body 420.
• Chamber walls 422 surround the processing region 402.
• Substrate 401 is located on pedestal 424.
• Pedestal 424 has a stem 450 including connections for a dual zone heater of the pedestal. Details related to a dual zone heater pedestal are described in more detail in U.S. Patent No. 6,646,235, filed October 19, 2001 , which is herein incorporated by reference in its entirety.
• the coil 412 spirals around the vertical axis of the upper wall of the dome of the plasma source.
• the coil 412 is positioned over electrode plate 18 and conforms to the dome shape. One end of the coil 412 is connected to an RF source 462, and an opposing end of the coil is connected to ground. According to one embodiment, an RF match circuit 464 may be provided between the RF source 462 and the coil 412.
• the RF source 462 may be operated to provide RF current to the coil 412 at a frequency of for example 13.56 MHz. A power of 0 to 3000 watts may be applied.
• the RF field couples with the nitrogen gas or oxygen gas injected into the gas inject 435.
• Gas inject 435 may inject N 2 , NH 3 , or the like. Further, gas inject 435 may inject oxygen (O2), nitric oxide (NO), or nitrous oxide (N 2 O) in the case oxides are grown.
• RF source 462 may either be operated in a pulsed mode or in a CW mode.
• the gas injected by gas inject 435 and ionized by the RF plasma and the deposition gas injected by deposition gas inject 430 reacts in the processing region 402 and/or on the heated wafer surface for thermal deposition of a layer on the substrate.
• Turbo pump 440 is connected to the chamber body 420 via valve 442 and via gas exhaust 443.
• valve 442 may be a throttle valve.
• Turbo pump 440 can reduce the pressure in the chamber to a level appropriate for the desired growth conditions on the substrate 401.
• the pressure in the processing region is, according to one embodiment, controlled to be below about 30 mTorr, typically from about 1 mTorr and about 20 mTorr.
• the above described embodiment allows for example for growth of silicon with excited nitrogen (N 2 ), ammonia (NH 3 ), oxygen (O 2 ), nitric oxide (NO), or nitrous oxide (N 2 O).
• Nitrogen and/or NH 3 are used to deposit a silicon nitride layer.
• O 2 , NO, and/or N 2 O are used to deposit a silicon oxide layer.
• the gases introduced from the upper gas inject 435 can be excited with a pulsed RF inductive source before mixing with the silicon source. Thereby, plasma enhanced CVD can be conducted at a lower wafer temperature.
• Further details of a chamber that may be included in chamber 400 to form further embodiments are described in more detail in U.S. Patent No. 6,831 ,021 , filed June 12, 2003, which is herein incorporated by reference in its entirety.

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