JP5311531B2 - 半導体チップの実装された表示パネル - Google Patents
半導体チップの実装された表示パネル Download PDFInfo
- Publication number
- JP5311531B2 JP5311531B2 JP2006227756A JP2006227756A JP5311531B2 JP 5311531 B2 JP5311531 B2 JP 5311531B2 JP 2006227756 A JP2006227756 A JP 2006227756A JP 2006227756 A JP2006227756 A JP 2006227756A JP 5311531 B2 JP5311531 B2 JP 5311531B2
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- Prior art keywords
- insulating film
- display panel
- electrode pad
- bumps
- organic insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Families Citing this family (65)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2841454B1 (fr) | 2002-07-01 | 2004-10-22 | Jean Pierre Delmotte | "appareil de cuisson d'aliments de type barbecue avec une plaque de regulation multi-fonctionnelle" |
| US20100164089A1 (en) * | 2006-02-15 | 2010-07-01 | Nxp B.V. | Non-Conductive Planarization of Substrate Surface for Mold Cap |
| JP2008166381A (ja) * | 2006-12-27 | 2008-07-17 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
| KR100810242B1 (ko) * | 2007-02-13 | 2008-03-06 | 삼성전자주식회사 | 반도체 다이 패키지와 그를 이용한 내장형 인쇄회로 기판 |
| JP2009282285A (ja) * | 2008-05-22 | 2009-12-03 | Mitsubishi Electric Corp | 画像表示装置、およびその実装検査方法 |
| JP2011009363A (ja) * | 2009-06-24 | 2011-01-13 | Nec Corp | 半導体装置及びその製造方法並びにこれを用いた複合回路装置 |
| TWI412107B (zh) * | 2009-10-02 | 2013-10-11 | 財團法人工業技術研究院 | 凸塊結構、晶片封裝結構及該凸塊結構之製備方法 |
| TWI445147B (zh) * | 2009-10-14 | 2014-07-11 | 日月光半導體製造股份有限公司 | 半導體元件 |
| CN102044513A (zh) * | 2009-10-21 | 2011-05-04 | 日月光半导体制造股份有限公司 | 半导体组件 |
| TW201117336A (en) * | 2009-11-05 | 2011-05-16 | Raydium Semiconductor Corp | Electronic chip and substrate providing insulation protection between conducting nodes |
| TW201121006A (en) * | 2009-12-03 | 2011-06-16 | Hannstar Display Corp | Connection structure for chip-on-glass driver IC and connection method therefor |
| US8426251B2 (en) * | 2010-01-07 | 2013-04-23 | Infineon Technologies Ag | Semiconductor device |
| CN102237329B (zh) * | 2010-04-27 | 2013-08-21 | 瑞鼎科技股份有限公司 | 芯片结构及其芯片接合结构与制造方法 |
| US9070851B2 (en) * | 2010-09-24 | 2015-06-30 | Seoul Semiconductor Co., Ltd. | Wafer-level light emitting diode package and method of fabricating the same |
| TWI478303B (zh) | 2010-09-27 | 2015-03-21 | 日月光半導體製造股份有限公司 | 具有金屬柱之晶片及具有金屬柱之晶片之封裝結構 |
| CN102064135B (zh) * | 2010-10-21 | 2015-07-22 | 日月光半导体制造股份有限公司 | 具有金属柱的芯片及具有金属柱的芯片的封装结构 |
| KR101822012B1 (ko) * | 2010-12-07 | 2018-01-26 | 삼성디스플레이 주식회사 | 유기전계발광 표시 장치 및 그 제조 방법 |
| TWM408126U (en) * | 2010-12-10 | 2011-07-21 | Chunghwa Picture Tubes Ltd | Conductive pad structure, chip package structure and active device array substrate |
| CN103299410B (zh) * | 2011-01-26 | 2016-01-27 | 株式会社村田制作所 | 电子元器件模块及电子元器件单元 |
| KR20130013515A (ko) * | 2011-07-28 | 2013-02-06 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
| TWI531835B (zh) | 2011-11-15 | 2016-05-01 | 友達光電股份有限公司 | 顯示面板 |
| WO2013101243A1 (en) | 2011-12-31 | 2013-07-04 | Intel Corporation | High density package interconnects |
| US9257276B2 (en) | 2011-12-31 | 2016-02-09 | Intel Corporation | Organic thin film passivation of metal interconnections |
| JP2014053597A (ja) * | 2012-08-09 | 2014-03-20 | Hitachi Chemical Co Ltd | チップ型電子部品及び接続構造体 |
| US10622310B2 (en) | 2012-09-26 | 2020-04-14 | Ping-Jung Yang | Method for fabricating glass substrate package |
| US9293438B2 (en) | 2013-07-03 | 2016-03-22 | Harris Corporation | Method for making electronic device with cover layer with openings and related devices |
| CN104347557A (zh) * | 2013-07-26 | 2015-02-11 | 日月光半导体制造股份有限公司 | 半导体封装件及其的制造方法 |
| JP6324746B2 (ja) * | 2014-02-03 | 2018-05-16 | デクセリアルズ株式会社 | 接続体、接続体の製造方法、電子機器 |
| CN104900543B (zh) * | 2014-03-06 | 2018-02-06 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制备方法 |
| US9666814B2 (en) | 2014-03-07 | 2017-05-30 | Samsung Display Co., Ltd. | Display device and method of manufacturing the same |
| JP2016018879A (ja) * | 2014-07-08 | 2016-02-01 | 株式会社東芝 | 半導体装置および半導体装置の製造方法 |
| US9698134B2 (en) * | 2014-11-27 | 2017-07-04 | Sct Technology, Ltd. | Method for manufacturing a light emitted diode display |
| CN104966676B (zh) * | 2015-07-08 | 2018-04-27 | 上海新微技术研发中心有限公司 | 共晶键合方法 |
| CN107046018B (zh) * | 2015-09-16 | 2020-06-02 | 杨秉荣 | 玻璃基板封装及其制造方法 |
| KR102393315B1 (ko) * | 2015-09-30 | 2022-04-29 | 엘지디스플레이 주식회사 | 디스플레이 장치 |
| CN205944139U (zh) | 2016-03-30 | 2017-02-08 | 首尔伟傲世有限公司 | 紫外线发光二极管封装件以及包含此的发光二极管模块 |
| KR102539031B1 (ko) * | 2016-04-28 | 2023-06-02 | 삼성디스플레이 주식회사 | 표시 장치 |
| KR102654925B1 (ko) * | 2016-06-21 | 2024-04-05 | 삼성디스플레이 주식회사 | 디스플레이 장치 및 이의 제조 방법 |
| KR102666884B1 (ko) * | 2016-07-15 | 2024-05-17 | 삼성디스플레이 주식회사 | 표시 장치 및 그의 제조 방법 |
| CN106019663A (zh) * | 2016-07-29 | 2016-10-12 | 京东方科技集团股份有限公司 | 集成电路器件及制作方法、电路板、显示面板、显示装置 |
| KR102638304B1 (ko) * | 2016-08-02 | 2024-02-20 | 삼성디스플레이 주식회사 | 표시장치 |
| KR102615177B1 (ko) * | 2016-10-06 | 2023-12-20 | 삼성디스플레이 주식회사 | 평판표시장치 |
| KR102785987B1 (ko) * | 2016-10-13 | 2025-03-24 | 삼성디스플레이 주식회사 | 표시 패널 |
| JP6773884B2 (ja) * | 2017-02-28 | 2020-10-21 | 富士フイルム株式会社 | 半導体デバイス、積層体ならびに半導体デバイスの製造方法および積層体の製造方法 |
| KR102341124B1 (ko) * | 2017-09-26 | 2021-12-22 | 삼성디스플레이 주식회사 | 전자패널, 표시장치, 및 그 제조 방법 |
| CN109659304A (zh) * | 2017-10-12 | 2019-04-19 | 上海和辉光电有限公司 | 一种阵列基板、显示面板及显示装置 |
| US10283471B1 (en) * | 2017-11-06 | 2019-05-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Micro-connection structure and manufacturing method thereof |
| CN109860224B (zh) * | 2017-11-30 | 2021-05-14 | 京东方科技集团股份有限公司 | 显示基板及其制作方法、显示面板、显示装置 |
| KR102452462B1 (ko) * | 2017-12-26 | 2022-10-06 | 엘지디스플레이 주식회사 | 표시장치 |
| KR102633137B1 (ko) | 2018-01-23 | 2024-02-02 | 삼성전자주식회사 | 반도체 패키지 |
| JP7160302B2 (ja) * | 2018-01-31 | 2022-10-25 | 三国電子有限会社 | 接続構造体および接続構造体の作製方法 |
| JP7046351B2 (ja) | 2018-01-31 | 2022-04-04 | 三国電子有限会社 | 接続構造体の作製方法 |
| JP7185252B2 (ja) | 2018-01-31 | 2022-12-07 | 三国電子有限会社 | 接続構造体の作製方法 |
| KR102512724B1 (ko) * | 2018-04-19 | 2023-03-23 | 삼성디스플레이 주식회사 | 표시장치 및 이의 제조방법 |
| KR20200005096A (ko) * | 2018-07-05 | 2020-01-15 | 엘지전자 주식회사 | 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법 |
| CN109188790B (zh) * | 2018-09-13 | 2022-04-15 | 京东方科技集团股份有限公司 | 基板及其制作方法、显示装置 |
| US20220320457A1 (en) * | 2019-07-12 | 2022-10-06 | Sharp Kabushiki Kaisha | Display device |
| KR102888782B1 (ko) | 2019-10-11 | 2025-11-24 | 삼성디스플레이 주식회사 | 접착 부재, 이를 포함한 표시장치, 및 표시장치의 제조 방법 |
| KR102722915B1 (ko) | 2019-10-30 | 2024-10-28 | 삼성전자주식회사 | 반도체 패키지 및 그 제조방법 |
| KR20210065580A (ko) | 2019-11-27 | 2021-06-04 | 엘지디스플레이 주식회사 | 플렉서블 표시장치 |
| KR20210086900A (ko) * | 2019-12-31 | 2021-07-09 | 삼성디스플레이 주식회사 | 표시 장치 |
| KR20210150649A (ko) * | 2020-06-03 | 2021-12-13 | 삼성디스플레이 주식회사 | 표시장치 |
| CN111640722B (zh) * | 2020-06-11 | 2022-07-05 | 厦门通富微电子有限公司 | 一种芯片封装方法和芯片封装器件 |
| CN111554582B (zh) * | 2020-06-11 | 2022-07-15 | 厦门通富微电子有限公司 | 一种芯片封装方法和芯片封装器件 |
| US11991824B2 (en) * | 2020-08-28 | 2024-05-21 | Unimicron Technology Corp. | Circuit board structure and manufacturing method thereof |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH095769A (ja) * | 1995-06-21 | 1997-01-10 | Rohm Co Ltd | 電子素子の配線接続構造 |
| JPH10144727A (ja) * | 1996-11-14 | 1998-05-29 | Matsushita Electric Ind Co Ltd | 半導体素子の実装方法および半導体素子を実装した電子装置 |
| US5903056A (en) * | 1997-04-21 | 1999-05-11 | Lucent Technologies Inc. | Conductive polymer film bonding technique |
| DE69811296D1 (de) * | 1997-07-11 | 2003-03-20 | Bosch Gmbh Robert | Erhöhte Haftung der Unterseitenbeschichtung von Flip-Chips |
| JPH11297889A (ja) * | 1998-04-16 | 1999-10-29 | Sony Corp | 半導体パッケージおよび実装基板、ならびにこれらを用いた実装方法 |
| US5943597A (en) * | 1998-06-15 | 1999-08-24 | Motorola, Inc. | Bumped semiconductor device having a trench for stress relief |
| HK1046012A1 (en) * | 1999-02-25 | 2002-12-20 | Nitto Denko Corporation | Resin composition for semiconductor encapsulation, semiconductor device obtained with the same, and process for producing semiconductor device |
| US6451875B1 (en) * | 1999-10-12 | 2002-09-17 | Sony Chemicals Corporation | Connecting material for anisotropically electroconductive connection |
| JP2001267370A (ja) * | 2000-03-14 | 2001-09-28 | Hitachi Ltd | 半導体実装装置および方法 |
| US6677664B2 (en) * | 2000-04-25 | 2004-01-13 | Fujitsu Hitachi Plasma Display Limited | Display driver integrated circuit and flexible wiring board using a flat panel display metal chassis |
| JP2001358171A (ja) * | 2000-06-12 | 2001-12-26 | Canon Inc | 半導体素子実装構造 |
| US6489573B2 (en) * | 2000-06-16 | 2002-12-03 | Acer Display Technology | Electrode bonding structure for reducing the thermal expansion of the flexible printed circuit board during the bonding process |
| TW479304B (en) * | 2001-02-06 | 2002-03-11 | Acer Display Tech Inc | Semiconductor apparatus and its manufacturing method, and liquid crystal display using semiconductor apparatus |
| KR100456064B1 (ko) | 2001-07-06 | 2004-11-08 | 한국과학기술원 | 극미세 피치 cog 기술용 이방성 전도성 필름 |
| JP3810064B2 (ja) * | 2002-03-15 | 2006-08-16 | 松下電器産業株式会社 | 液晶表示装置 |
| JP2003332384A (ja) * | 2002-05-13 | 2003-11-21 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
| US6744142B2 (en) * | 2002-06-19 | 2004-06-01 | National Central University | Flip chip interconnection structure and process of making the same |
| WO2004051732A1 (en) * | 2002-11-29 | 2004-06-17 | Infineon Technologies Ag | Attachment of flip-chips to substrates |
| JP4115832B2 (ja) * | 2002-12-27 | 2008-07-09 | 東芝松下ディスプレイテクノロジー株式会社 | 半導体素子及び液晶表示パネル |
| US7180149B2 (en) * | 2003-08-28 | 2007-02-20 | Fujikura Ltd. | Semiconductor package with through-hole |
| JP2005109023A (ja) * | 2003-09-29 | 2005-04-21 | Optrex Corp | 半導体チップ及びそれを実装した液晶表示装置 |
| JP2005109187A (ja) * | 2003-09-30 | 2005-04-21 | Tdk Corp | フリップチップ実装回路基板およびその製造方法ならびに集積回路装置 |
| US20050104225A1 (en) * | 2003-11-19 | 2005-05-19 | Yuan-Chang Huang | Conductive bumps with insulating sidewalls and method for fabricating |
| TWI262347B (en) * | 2004-08-02 | 2006-09-21 | Hannstar Display Corp | Electrical conducting structure and liquid crystal display device comprising the same |
| JP2007335607A (ja) * | 2006-06-14 | 2007-12-27 | Sharp Corp | Icチップ実装パッケージ、及びこれを用いた画像表示装置 |
-
2005
- 2005-08-24 KR KR1020050077657A patent/KR101134168B1/ko not_active Expired - Lifetime
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2006
- 2006-08-22 CN CN2006101215580A patent/CN1921095B/zh not_active Expired - Fee Related
- 2006-08-23 TW TW095130982A patent/TWI419292B/zh not_active IP Right Cessation
- 2006-08-24 JP JP2006227756A patent/JP5311531B2/ja not_active Expired - Fee Related
- 2006-08-24 US US11/509,482 patent/US7750469B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US20070045841A1 (en) | 2007-03-01 |
| KR20070023268A (ko) | 2007-02-28 |
| CN1921095B (zh) | 2012-05-09 |
| US7750469B2 (en) | 2010-07-06 |
| CN1921095A (zh) | 2007-02-28 |
| TW200715514A (en) | 2007-04-16 |
| JP2007059916A (ja) | 2007-03-08 |
| KR101134168B1 (ko) | 2012-04-09 |
| TWI419292B (zh) | 2013-12-11 |
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